Solar RRL最新文献

{"title":"Interface Fermi-Level Engineering for Selective Hole Extraction Without p-Type Doping In Cdte Solar Cells to Reach High Open Circuit Voltage (>1 V)","authors":"Xin Qi,&nbsp;Zheng Ju,&nbsp;Xiaoyang Liu,&nbsp;Jiarui Gong,&nbsp;Yi Lu,&nbsp;Yang Liu,&nbsp;Razine Hossain,&nbsp;Nathan Rosenblatt,&nbsp;Tyler T. McCarthy,&nbsp;Allison M. McMinn,&nbsp;Martha R. McCartney,&nbsp;David J. Smith,&nbsp;Zhenqiang Ma,&nbsp;Yong-Hang Zhang","doi":"10.1002/solr.70043","DOIUrl":"https://doi.org/10.1002/solr.70043","url":null,"abstract":"<p><b>CdTe Solar Cells</b></p><p>In article number 2500124, Yong-Hang Zhang and co-workers demonstrated monocrystalline CdTe solar cells using all n-type ITO and semiconductors plus a specially designed interface that acts as a hole contact without p-type doping, addressing a decades-old challenge for CdTe photovoltaics.\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 12","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.70043","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144482076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cost Analysis of Perovskite-Organic Tandem Solar Cell","authors":"Xian Jin Gan,&nbsp;Ming Yang Gao,&nbsp;Hong Tian,&nbsp;Hui Lv,&nbsp;Yang (Michael) Yang","doi":"10.1002/solr.202500148","DOIUrl":"https://doi.org/10.1002/solr.202500148","url":null,"abstract":"<p>The photovoltaic technology is witnessing rapid advancements, with perovskite-organic tandem solar cells (PO-TSCs) emerging as a highly promising option among perovskite-based solar cells. However, its cost analysis is still very much lacking. This study undertakes a comprehensive cost and economic analysis of PO-TSCs, aiming to identify the gap with different device configurations and evaluate their commercialization potential. By employing a bottom-up cost analysis model, various cost components such as materials, equipment, and maintenance are evaluated. The analysis reveals a manufacturing cost of 97.91 USD/m², with the PBDTT − 2F material in the organic solar cell being the dominant cost factor, accounting for 79.20%. Under the simulated assumptions, the module cost is 0.49 USD/W and the levelized cost of electricity is 4.8 cents/kW h. To assess the economic impact of different solar cell parameters on their performance, a sensitivity analysis is conducted, with particular emphasis on the rate of efficiency loss over time. The findings indicate that achieving a module efficiency of 25% and an operating time of 25 years, along with minimal loss rates, are crucial for economic viability. Although PO-TSCs have higher initial material and module costs compared to planar single- junction perovskite cells, their superior photoelectric conversion efficiency and potential for cost reduction endow them with a competitive edge in the market. This study not only highlights the technical and economic feasibility of PO-TSCs but also provides valuable insights for future technological progress and market strategies for PO-TSCs.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 12","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144482245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Efficiency Perovskite/Silicon Tandem Solar Cells with Flexibility","authors":"Hirotaka Shishido,&nbsp;Ryo Sato,&nbsp;Daisuke Ieki,&nbsp;Gakuto Matsuo,&nbsp;Kimihiko Saito,&nbsp;Makoto Konagai,&nbsp;Ryousuke Ishikawa","doi":"10.1002/solr.202570110","DOIUrl":"https://doi.org/10.1002/solr.202570110","url":null,"abstract":"<p>Tandem Solar Cells</p><p>In article number 2400899, Ryousuke Ishikawa and co-workers develop flexible perovskite/silicon tandem solar cells by fabricating perovskite cells on thin, bendable silicon substrates. By optimizing surface microtexturing and processing, an efficiency of 26.5% was achieved. These findings suggest that flexible, high-efficiency solar cells could be deployed in situations where traditional silicon cells are not practical.\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 11","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202570110","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144220333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Permeable Modification and Near-Infrared Absorption of n-Type Non-Fullerene Acceptors for High-Performance Perovskite Solar Cells","authors":"Yunuo Hui,&nbsp;Xiong Chang,&nbsp;Haorui Tang,&nbsp;Zhewen Xie,&nbsp;Yong Zhu,&nbsp;Xixi Yu,&nbsp;Kunpeng Li,&nbsp;Huicong Zhang,&nbsp;Fashe Li,&nbsp;Xing Zhu,&nbsp;Hua Wang,&nbsp;Jiangzhao Chen,&nbsp;Tao Zhu","doi":"10.1002/solr.202500123","DOIUrl":"https://doi.org/10.1002/solr.202500123","url":null,"abstract":"<p>As the foremost electron transport material in inverted perovskite solar cells, the phenyl-C61-butyric acid methyl ester (PCBM) is constrained by its inadequate electrical properties and defect passivation capability to fabricate devices with better performance. Herein, a non-fullerene acceptor molecule eC9-2Cl is introduced into the PCBM, which simultaneously passivates the defects distributed on the perovskite surface, enhances the electrical properties of PCBM, and provides additional near-infrared absorption. The strategic incorporation of eC9-2Cl optimizes band alignment and increases electron mobility. Furthermore, the electron-deficient thiophene and carbonyl moieties in eC9-2Cl effectively passivate uncoordinated Pb²⁺ defects. The eC9-2Cl-doped PCBM devices showed an increased open-circuit voltage (<i>V</i>_OC) of 1.12 V, attaining the champion power conversion efficiency (PCE) of 24.40% with a narrow distribution. Moreover, the modified devices demonstrate an exceptional retention of 96% initial PCE after storing under ambient air for over 1800 h. This can be attributed to the enhanced uniformity, defect passivation, and augmented hydrophobicity after eC9-2Cl introduction.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 12","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144482186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Roles of Ion Migration on Perovskite Solar Cell Operational Stability at Various Illumination Intensities","authors":"Kenedy T. Tanko,&nbsp;Sonia R. Raga,&nbsp;Naji Vahedigharehchopogh,&nbsp;Fanny Baumann,&nbsp;Masoud Karimipour,&nbsp;Ramsés Alejandro Miranda-Gamboa,&nbsp;Monica Lira-Cantú","doi":"10.1002/solr.202500162","DOIUrl":"https://doi.org/10.1002/solr.202500162","url":null,"abstract":"<p>Monitoring the stability of perovskite solar cells (PSCs) under operational conditions is crucial for their development. This study integrates maximum power point (MPP) tracking with <i>quasi in-situ</i> electrochemical impedance spectroscopy at successive intervals to elucidate the temporal evolution of degradation mechanisms in PSCs. The gradual losses in photocurrent, photovoltage, and fill factor during MPP tracking were attributed to alterations in recombination processes, kinetic constants, shunt pathways, and series resistances, each manifesting at distinct phases of the PSC stability assessment. Notably, these variations correlated with a progressive increase in ionic density and mobility within the perovskite layer, as evidenced by a shift in the low-frequency ionic response and a 0.13 eV reduction in ionic activation energy. This apparent enhancement in ionic conductivity was more pronounced under illuminance levels below 1000Lx, predominantly affecting shunt resistance and leading to significant implications for indoor photovoltaic performance. The reported methodology offers a straightforward, non-destructive, and effective means to augment conventional PSC stability analyses across various lighting conditions.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 12","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202500162","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144482089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Solution-Processed Arsenic Chalcogenides as Dopant Source and Back Contact for Efficient CdSeTe Solar Cells","authors":"Xiaomeng Duan,&nbsp;Yizhao Wang,&nbsp;Lin Li,&nbsp;Feng Yan","doi":"10.1002/solr.202500229","DOIUrl":"https://doi.org/10.1002/solr.202500229","url":null,"abstract":"<p>Group V doping in CdSeTe device can improve power conversion efficiency (PCE) and device stability. Arsenic (As) incorporation into CdSeTe has been demonstrated via both in situ and ex situ techniques; however, optimizing the back contact for group V-doped CdSeTe devices remains a critical challenge. Here, solution-processed arsenic chalcogenides (i.e., As₂Te₃ and As₂Se₃) as dual-role materials, serving as both dopants and back-contact materials for high-efficiency CdSeTe devices, are investigated. During the formation of the back contact, a portion of the arsenic chalcogenides diffuses into the CdSeTe absorber, facilitating p-type doping. The remaining materials forms a stable back-contact layer that facilitate carrier collection and reducing recombination losses at the CdSeTe back surface. Particularly, CdSeTe device employing Te rich As₂Te₃ layer as the dopant and back-contact materials achieves a PCE of 18.34%, demonstrating the dual functionality of solution-processed arsenic chalcogenides in simultaneously doping the absorber and optimizing charge extraction. This solution based cost-effective As doping approach offers a promising pathway for advancing CdSeTe photovoltaic technology.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 12","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144482125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Failure Mode Affecting the Reliability of LECO-Treated High-Efficiency TOPCon Solar Cells","authors":"Yuelin Xiong,&nbsp;Tarek O. Abdul Fattah,&nbsp;Kuninori Okamoto,&nbsp;Ruy S. Bonilla","doi":"10.1002/solr.202500151","DOIUrl":"https://doi.org/10.1002/solr.202500151","url":null,"abstract":"<p>Laser-enhanced contact optimization (LECO) has become an essential process in enabling the fabrication of &gt;25% efficient tunnel oxide–passivated contact (TOPCon) solar cells, now in use in &gt;100 GW of silicon solar module production. LECO improves the metal–semiconductor interface in silicon solar cells, thus resulting in an excellent trade-off between contact resistance (<i>ρ</i>_c &lt; 1 mΩ.cm²) and surface recombination (<i>J</i>_0met &lt; 160 fA/cm²). This work presents a new failure mode observed at the front p⁺-Ag contact in LECO-treated TOPCon solar cells, which is not observed in standard screen-printed metallization. The bias and temperature stress severely degrade the dark contact resistance in LECO-treated TOPCon, leading to an increase in series resistance of over 100 Ω in a 2 x 2 cm² cell. Unlike standard TOPCon, where degradation has been ascribed to the n⁺-Ag contact, the LECO cells show the most prominent degradation at the p-type contact side. Luminescence measurements on stressed samples show reduced recombination, which could be attributed to improved passivation at the p⁺-Ag interface and/or the enhancement of other recombination-limiting factors such as AlO_<i>x</i> passivation, but negatively impacting conductivity. The temperature and bias stress also deteriorate the light current–voltage characteristics for the samples that underwent the LECO process. These results reveal a potential degradation mode in LECO-treated TOPCon solar cells, indicating the need for further investigation into its impact on efficiency gain, long-term reliability, and bankability.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 12","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202500151","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144482122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Fluorine Doping on Hole Transport Properties of NiOx for High-Efficiency Perovskite Solar Cells","authors":"Dilpreet Singh Mann,&nbsp;Jaswinder Singh,&nbsp;Sakshi Thakur,&nbsp;Sung-Nam Kwon,&nbsp;Kwang-Un Jeong,&nbsp;Seok-In Na","doi":"10.1002/solr.202500152","DOIUrl":"https://doi.org/10.1002/solr.202500152","url":null,"abstract":"<p>In perovskite solar cells (PSCs), the hole transport layer (HTL) is a crucial component, especially in inverted PSCs, which require enhanced cost efficiency, high mobility, excellent transmittance, and stability. The performance of inverted perovskite solar cells remains lower than the regular PSCs because of interfacial defects, poor electrical conductivity, and unfavorable band alignment between the perovskite and the HTL (NiOx). In this work, fluorine-incorporated nickel oxide (F doped NiOx) NPs are prepared using a co-precipitation approach and subsequently used as a HTL in the PSCs. Fluorine is effectively incorporated into the NiOx, resulting in strong bonding and a more stable structure, which passivates the hydroxyl groups from the NiOx surface and decreases defect sites. Moreover, fluorine is established as an efficient dopant for nickel oxide, which minimizes the formation of nickel vacancies while simultaneously enhancing the density of Ni³⁺ ions. Additionally, the electronic conductivity was enhanced, and the work function was increased with the F-doped NiOx film, which can facilitate hole extraction and reduce the recombination rate. Therefore, the F-doped NiOx PSCs achieved a remarkable power conversion efficiency of up to 20.78%. The F-doped NiOx also lead to improvement in stability under several environmental conditions, such as air, light soaking, and heating (65°C).</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 12","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144482254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of Near Infrared Transparent p-i-n Perovskite Solar Cells with Active Area >1 cm2 for Four-Terminal Perovskite/Si Tandem Solar Cells","authors":"Laxmi Laxmi,&nbsp;Venkatesh G. Chityala,&nbsp;Suryanarayan Nayak,&nbsp;Ananta Paul,&nbsp;Saurabh Gupta,&nbsp;Manas Misra,&nbsp;Kashimul Hossain,&nbsp;Mohit Kumar Singh,&nbsp;Sudhanshu Mallick,&nbsp;Dinesh Kabra","doi":"10.1002/solr.202500163","DOIUrl":"https://doi.org/10.1002/solr.202500163","url":null,"abstract":"<p>Four-terminal (4-T) perovskite/silicon tandem solar cell is crucial due to the different lifetime of top near-infrared transparent (NIRT) perovskite solar cell (PSC) and bottom silicon (Si) solar cell, and it allows for independent optimization and operation of the top and bottom subcells. Knowing the fact that Si solar cells are well established, we take the opportunity to explore NIRT-PSC which is still reported by selective groups because of challenges associated with sputtered transparent conducting electrode (TCE) deposition. In this study, we have emphasized on passivation engineering, scalability, modifications to the absorber layer thickness, and advancements in electrode design to improve the performance of NIRT-PSC. First, we have optimized thickness of passivating aluminum oxide (Al₂O₃) for <i>p-i-n</i> PSCs device with wide bandgap (E_g = 1.67 eV) perovskite absorber. We have achieved power conversion efficiency (PCE) of 20.20% with active area of 0.056 cm² and 19.16% with active area of 0.175 cm² by using an optimized thickness of Al₂O₃ (3 nm) interlayer for opaque devices. Additionally, Al₂O₃ passivated devices (T₈₀ &gt; 1600 h) demonstrated improved stability compared to control devices (T₈₀ ∼ 100 h) under identical measurement conditions. Building on this optimized passivation strategy, we extended the design to NIRT-PSCs, which are crucial for 4-T tandem solar cells. For optimized NIRT-PSCs, (i) we have used thicker perovskite layer, as TCEs do not provide the benefit of back reflection, and (ii) metallization of transparent conducting electrodes to mitigate higher sheet resistance of TCE compared to opaque electrodes. With optimized NIRT-PSCs, we have achieved PCE of 29.14% &amp; 26.86% for active areas of 0.175 and 1.08 cm², respectively, in 4-T perovskite/Si tandem solar cell, where the bottom Si solar cell has the PCE = 25.5%.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 12","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144482255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Benchmarking Inorganic Thin-Film Photovoltaics Technologies for Indoor Applications","authors":"Marcel Placidi,&nbsp;Arnau Torrens,&nbsp;Zacharie Jehl Li-Kao,&nbsp;Alex Lopez-Garcia,&nbsp;Oriol Segura,&nbsp;Yuancai Gong,&nbsp;Alex Jimenez-Arguijo,&nbsp;Ivan Caño,&nbsp;Sergio Giraldo,&nbsp;Edgardo Saucedo,&nbsp;Gustavo Alvarez,&nbsp;Yudania Sanchez,&nbsp;Nicolae Spalatu,&nbsp;Ilona Oja,&nbsp;Elisa Artegiani,&nbsp;Alessandro Romeo,&nbsp;Romain Scaffidi,&nbsp;Alejandro Perez-Rodriguez","doi":"10.1002/solr.202500030","DOIUrl":"https://doi.org/10.1002/solr.202500030","url":null,"abstract":"<p>The growing demand for sustainable power solutions for Internet of Things (IoT) systems, projected to reach billions of units in the near future, highlights the limitations of battery reliance due to maintenance, environmental concerns, and supply constraints. Inorganic thin-film photovoltaics (PV) technologies (including cadmium telluride, kesterite, antimony chalcogenide, nanometric silicon, and elemental selenium) emerge as promising candidates for indoor applications due to their suitable bandgap energies and very high robustness and stability, as well as their potential to achieve higher efficiencies at indoor illumination conditions. The work reported here compares the optoelectronic performance of several technologies under relevant indoor illumination conditions using a consistent characterization methodology, that encompasses the needs of indoor PV, including a benchmark with commercial state-of-the-art (SoA) a-Si devices. The results show many devices performing surprisingly well indoors, which corroborates their potential for achieving high efficiencies. However, the performance of these devices is compromised at very low irradiance conditions, and this is attributed to the need for optimization of both the shunt resistance and saturation current density.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 11","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202500030","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144220320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}