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Detection of electron trapping/detrapping in MoS 2 FET by high time-resolved I-V measurement 用高时间分辨I-V测量方法检测MoS 2 FET中的电子捕获/去捕获
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/ssdm.2017.ps-13-22
K. Taniguchi
{"title":"Detection of electron trapping/detrapping in MoS 2 FET by high time-resolved I-V measurement","authors":"K. Taniguchi","doi":"10.7567/ssdm.2017.ps-13-22","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-13-22","url":null,"abstract":"For exploring the origin for the interface states in MoS2 FET, the transient response of MOS capacitor to ultra-fast pulsed top gate voltage was studied with high time resolution current measurement system. The difference of time constant originated from trapping and detrapping of electrons on interface states was detected, which cannot be measured in C-V measurement.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77233152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Investigation of the Contact Resistance of Graphene/MoS2 Interface Treated with O2 Plasma O2等离子体处理石墨烯/MoS2界面接触电阻的实验研究
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/SSDM.2017.PS-13-20
Q. Lu
{"title":"Experimental Investigation of the Contact Resistance of Graphene/MoS2 Interface Treated with O2 Plasma","authors":"Q. Lu","doi":"10.7567/SSDM.2017.PS-13-20","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-13-20","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"48 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78212678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Programming Current Reduction in GeS 2 +Sb 2 Te 3 Based Phase-Change Memory 基于ges2 + sb2te 3相变存储器的编程电流减小
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/SSDM.2017.A-8-05
J. Kluge, A. Verdy, G. Navarro, S. Blonkowski, V. Sousa, P. Kowalczyk, M. Bernard, N. Bernier, G. Bourgeois, N. Castellani, P. Noé, E. Nowak, L. Perniola
{"title":"Programming Current Reduction in GeS 2 +Sb 2 Te 3 Based Phase-Change Memory","authors":"J. Kluge, A. Verdy, G. Navarro, S. Blonkowski, V. Sousa, P. Kowalczyk, M. Bernard, N. Bernier, G. Bourgeois, N. Castellani, P. Noé, E. Nowak, L. Perniola","doi":"10.7567/SSDM.2017.A-8-05","DOIUrl":"https://doi.org/10.7567/SSDM.2017.A-8-05","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"74 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81066639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TCAD simulation of planar single-gate Si tunnel FET with average subthreshold swing less than 60 mV/dec for 0.3 V operation 0.3 V工作时平均亚阈值摆幅小于60 mV/dec的平面单栅硅隧道场效应管的TCAD仿真
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/SSDM.2017.PS-3-14
K. Kukita, T. Uechi, J. Shimokawa, M. Goto, Y. Yokota, S. Kawanaka, T. Tanamoto, M. Koyama, H. Tanimoto, S. Takagi
{"title":"TCAD simulation of planar single-gate Si tunnel FET with average subthreshold swing less than 60 mV/dec for 0.3 V operation","authors":"K. Kukita, T. Uechi, J. Shimokawa, M. Goto, Y. Yokota, S. Kawanaka, T. Tanamoto, M. Koyama, H. Tanimoto, S. Takagi","doi":"10.7567/SSDM.2017.PS-3-14","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-3-14","url":null,"abstract":"TCAD simulations have been performed to optimize well designed planar single-gate silicon (Si) vertical tunneling junction field effect transistor (VTFET) with average subthreshold swing (S.S.) less than 60 mV/dec for 0.3 V (=Vgs=Vds) operation. By scaling the equivalent oxide thickness (EOT) and increasing the gate-to-source overlap length Lov, it achieved both on-current (Ion) greater than 1.0 A/m and low average S.S. without pocket doping for forming tunnel junction in conventional VTFET.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"21 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81145271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sodium Dodecyl Sulfate-Functionalized Carbon Nanotube / Polydimethylsiloxane Composites for High Performance Triboelectric Nanogenerator 十二烷基硫酸钠-功能化碳纳米管/聚二甲基硅氧烷复合材料用于高性能摩擦电纳米发电机
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/SSDM.2017.PS-13-24
N. Ketama
{"title":"Sodium Dodecyl Sulfate-Functionalized Carbon Nanotube / Polydimethylsiloxane Composites for High Performance Triboelectric Nanogenerator","authors":"N. Ketama","doi":"10.7567/SSDM.2017.PS-13-24","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-13-24","url":null,"abstract":"This research presents a fabrication of triboelectric nanogenerator (TENG) using the sodium dodecyl sulfate (SDS)-functionalized carbon nanotube (CNT) / polydimethylsiloxane(PDMS) composites (SDS/CNT/PDMS) as a negative electrode and polyethylene terephthalate / indium tin oxide (PET/ITO) as a positive electrode. The effect of CNT concentration and the SDS concentration were on TENG performance were investigated. Experimental results indicate that the SDS/CNT/PDMS is an effective electrode to enhance the output voltage of TENG with a maximum voltage of 66.8 V enabled an approximately 6-fold improvement in voltage output compared to the pristine PDMS. CNT may help to the high conductivity and flexibility of CNT, resulting in fast charge transfer and fast shape-recovery, while SDS may help to increase charge density and furthermore CNT dispersion.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88692885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hot-carrier Induced Drastic Off-state Leakage Current Degradation in STI-based N-channel LDMOS 热载流子诱导的si基n沟道LDMOS断态泄漏电流急剧下降
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/SSDM.2017.PS-3-13
Keita Takahashi, K. Komatsu, Toshihiro Sakamoto, K. Kimura, F. Matsuoka
{"title":"Hot-carrier Induced Drastic Off-state Leakage Current Degradation in STI-based N-channel LDMOS","authors":"Keita Takahashi, K. Komatsu, Toshihiro Sakamoto, K. Kimura, F. Matsuoka","doi":"10.7567/SSDM.2017.PS-3-13","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-3-13","url":null,"abstract":"Abstract In this paper, hot-carrier (HC) induced drastic off-state leakage current (Ioff) degradation for the LDMOS is found and the mechanism is also investigated in detail. Continuous on-state drain current flow of the LDMOS generates the HC which is trapped in the STI, and causes the drastic increase of the Ioff for the LDMOS. Therefore, HC induced drastic Ioff increase should be taken into account for the LDMOS design.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"508 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77350452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First-principles study on domain boundary of MoS 2 : Origin of band bending MoS 2畴边界的第一性原理研究:带弯曲的起源
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/SSDM.2017.PS-13-21
T. Kaneko
{"title":"First-principles study on domain boundary of MoS 2 : Origin of band bending","authors":"T. Kaneko","doi":"10.7567/SSDM.2017.PS-13-21","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-13-21","url":null,"abstract":"Using first-principles calculations based on density functional theory, electronic structure of domain boundary of MoS2 in which same polar edges are faced each other are investigated theoretically. We also find that the up-shift of energy bands at the domain boundaries are caused by charge accumulation. For such change in the energy bands, the defect levels at the domain boundaries play a decisive role.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"50 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82808766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Contact Properties of SWNT TCEs via the Microwave Treatment 微波处理SWNT tce的接触特性
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/ssdm.2017.ps-13-25
K. H. Kim
{"title":"Contact Properties of SWNT TCEs via the Microwave Treatment","authors":"K. H. Kim","doi":"10.7567/ssdm.2017.ps-13-25","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-13-25","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"62 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79493175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimizing MOS-Gated Thyristor using Voltage-based Equivalent Circuit Model for Designing Steep Subthreshold Slope PN-Body Tied SOI FET 基于电压等效电路模型优化mos门控晶闸管设计陡亚阈斜率pn体捆扎SOI场效应管
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/SSDM.2017.E-5-03
D. Ueda
{"title":"Optimizing MOS-Gated Thyristor using Voltage-based Equivalent Circuit Model for Designing Steep Subthreshold Slope PN-Body Tied SOI FET","authors":"D. Ueda","doi":"10.7567/SSDM.2017.E-5-03","DOIUrl":"https://doi.org/10.7567/SSDM.2017.E-5-03","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72653763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A first principles study on the C=C defects near SiC/SiO 2 interface: Defect passivation by double bond saturation SiC/ sio2界面附近C=C缺陷的第一性原理研究:双键饱和缺陷钝化
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/SSDM.2017.PS-14-11
N. Tajima
{"title":"A first principles study on the C=C defects near SiC/SiO 2 interface: Defect passivation by double bond saturation","authors":"N. Tajima","doi":"10.7567/SSDM.2017.PS-14-11","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-14-11","url":null,"abstract":"We performed first principles calculations to study the C=C defects near SiC/SiO2 interface, and demonstrated that the intra-gap defect levels could be removed by changing the C=C double bond to a C-C single bond.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"84 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78066110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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