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Voltage Controlled Magnetic Anisotropy at Fe 1- x Co x Pd/MgO Interface 电压控制fe1 - x Co x Pd/MgO界面磁各向异性
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/ssdm.2017.k-8-05
A. Shukla, M. Goto, K. Nawaoka, Joko Suwardy, S. Miwa, Yoshikazu Suzuki
{"title":"Voltage Controlled Magnetic Anisotropy at Fe 1- x Co x Pd/MgO Interface","authors":"A. Shukla, M. Goto, K. Nawaoka, Joko Suwardy, S. Miwa, Yoshikazu Suzuki","doi":"10.7567/ssdm.2017.k-8-05","DOIUrl":"https://doi.org/10.7567/ssdm.2017.k-8-05","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77195217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lowering Minimum Operation Voltage (V min ) in SRAM Array by Post-Fabrication Self-Improvement of Cell Stability by Multiple Stress Application 通过多重应力提高电池稳定性，降低SRAM阵列的最小工作电压
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/ssdm.2017.e-5-04
T. Mizutani, K. Takeuchi, T. Saraya, M. Kobayashi, T. Hiramoto
{"title":"Lowering Minimum Operation Voltage (V min ) in SRAM Array by Post-Fabrication Self-Improvement of Cell Stability by Multiple Stress Application","authors":"T. Mizutani, K. Takeuchi, T. Saraya, M. Kobayashi, T. Hiramoto","doi":"10.7567/ssdm.2017.e-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2017.e-5-04","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90188709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of Hall Effect Mobility for SiC MOSFETs with Increasing Nitrogen Implantation into Channel Region 沟道区氮注入增加对SiC mosfet霍尔效应迁移率的影响
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/SSDM.2017.PS-14-09
M. Noguchi
{"title":"Evaluation of Hall Effect Mobility for SiC MOSFETs with Increasing Nitrogen Implantation into Channel Region","authors":"M. Noguchi","doi":"10.7567/SSDM.2017.PS-14-09","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-14-09","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89825522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Surface Roughness of Trench Sidewalls on Channel Mobility in 4H-SiC Trench MOSFETs 沟槽侧壁表面粗糙度对4H-SiC沟槽mosfet沟道迁移率的影响
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/ssdm.2017.o-1-06
K. Kutsuki
{"title":"Effect of Surface Roughness of Trench Sidewalls on Channel Mobility in 4H-SiC Trench MOSFETs","authors":"K. Kutsuki","doi":"10.7567/ssdm.2017.o-1-06","DOIUrl":"https://doi.org/10.7567/ssdm.2017.o-1-06","url":null,"abstract":"Abstract The effect of the surface roughness of trench sidewalls on electrical properties have been investigated for improving channel mobility in 4H-SiC trench MOSFETs. The surface roughness was evaluated by atomic force microscopy (AFM). The characteristics of channel mobility were analyzed based on the mobility model including optical phonon scattering. The results revealed that surface roughness scattering had small contribution to channel mobility, and there was no correlation between the experimental RMS values and surface roughness scattering. On the other hand, it was necessary to pay attention to the surface morphology from the view point of device reliability.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"50 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91390513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
[No-show]Paramagnetic Property in Two-Dimensional Titanium Carbides via Surface Modifications 基于表面改性的二维碳化钛的顺磁性能
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/SSDM.2017.PS-13-18
Y. Yoon
{"title":"[No-show]Paramagnetic Property in Two-Dimensional Titanium Carbides via Surface Modifications","authors":"Y. Yoon","doi":"10.7567/SSDM.2017.PS-13-18","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-13-18","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"63 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77609159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Normally-off MOSFET Properties Fabricated on Mg Implanted GaN Layers 在Mg注入GaN层上制备正常关断的MOSFET特性
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/SSDM.2017.PS-14-10
S. Takashima, K. Ueno, R. Tanaka, H. Matsuyama, M. Edo, K. Nakagawa
{"title":"Normally-off MOSFET Properties Fabricated on Mg Implanted GaN Layers","authors":"S. Takashima, K. Ueno, R. Tanaka, H. Matsuyama, M. Edo, K. Nakagawa","doi":"10.7567/SSDM.2017.PS-14-10","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-14-10","url":null,"abstract":"Normally-off MOSFET properties fabricated on Mg implanted GaN layers 富士電機 1, 山梨大 2 高島信也 ,上野勝典 ,田中亮 ,松山秀昭 ,江戸雅晴 , 中川清和 2 Fuji Electric, Univ. of Yamanashi Shinya Takashima, Katsunori Ueno, Ryo Tanaka, Hideaki Matsuyama, Masaharu Edo, Kiyokazu Nakagawa E-mail: takashima-shinya@fujielectric.com [はじめに] GaN 系 FET は GaN の優れた物性値から次世代の低損失パワースイッチング素子とし て期待され、近年は自立基板の普及に伴い縦型パワーデバイス実現に向けた研究開発が活発に進 められている。パワー用途でのスイッチングデバイスには絶縁ゲート駆動でノーマリーオフ型が 望まれ、これらを実現可能な MOS チャネルの特性制御は重要な要素技術である。我々は、これまで に p型GaNエピ層上にてMg濃度によるMOSFET特性制御が可能であることを明らかにした[1]。 縦型 MOSFET 実現に向けては、イオン注入により形成した p型層の適用が好ましい。そこで、本 発表では、Mg注入 GaN層上にて形成した横型MOSFET の特性を報告する。 [実験方法] +c面 n-GaN自立基板上 undope-GaNエピに、500 nm深さまで 1×10 cm濃度となる BOXプロファイルにてMg を全面にイオン注入し、1200~1400°Cで活性化熱処理を行った。その 後、n+ソース/ドレイン領域に Siをイオン注入し、1100°Cで活性化処理を行った。ゲート絶縁膜と して、TEOS を用いたリモートプラズマ CVD 法で SiO2 100 nmを成膜し、アルミ電極を形成して図 1 に示す横型 MOSFET を Mg注入層上に作製した。 [結果] 作製した横型 MOSFET の Id-Vg特性を図 2 に示す。しきい値が約 10 V のノーマリーオフ MOSFET 動作が確認された。Idは Mg 活性化温度を上げるに従い増加した。Id-Vg特性から算出し た電界効果移動度カーブを図 3 に示す。活性化処理温度が高いほど移動度が向上し、1400°C活性 化処理層上では約 50 cm/Vsに達した。詳細については当日議論する。 [謝辞] 本研究の一部は、総合科学技術・イノベーション会議の SIP(戦略的イノベーション創造 プログラム)「次世代パワーエレクトロニクス」(管理法人:NEDO)によって実施されました。 [1] S. Takashima et al., International Workshop on Nitride Semiconductors, C0.5.03 (2016).","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"93 3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83495463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs 金属源极/漏极Ge mosfet沟道迁移率与衬底杂质浓度的关系
The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI: 10.7567/ssdm.2017.k-3-06
T. Sakaguchi
{"title":"Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs","authors":"T. Sakaguchi","doi":"10.7567/ssdm.2017.k-3-06","DOIUrl":"https://doi.org/10.7567/ssdm.2017.k-3-06","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78721650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
[No-Show]Mid-Infrared Si-photonic Devices Based on 340 nm SOI Platform 基于340nm SOI平台的中红外硅光子器件
The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI: 10.7567/SSDM.2017.H-8-03
H. Wang
{"title":"[No-Show]Mid-Infrared Si-photonic Devices Based on 340 nm SOI Platform","authors":"H. Wang","doi":"10.7567/SSDM.2017.H-8-03","DOIUrl":"https://doi.org/10.7567/SSDM.2017.H-8-03","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"246 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75099065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comprehensive Analysis of Low-frequency Noise Variability Components in Bulk and FDSOI (SOTB) MOSFETs 体和FDSOI (SOTB) mosfet中低频噪声变异性成分的综合分析
The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI: 10.7567/SSDM.2017.E-1-02
K. Maekawa, H. Makiyama, Yoshiki Yamamoto, T. Hasegawa, S. Okanishi, K. Sonoda, H. Shinkawata, T. Yamashita, S. Kamohara, Y. Yamaguchi
{"title":"Comprehensive Analysis of Low-frequency Noise Variability Components in Bulk and FDSOI (SOTB) MOSFETs","authors":"K. Maekawa, H. Makiyama, Yoshiki Yamamoto, T. Hasegawa, S. Okanishi, K. Sonoda, H. Shinkawata, T. Yamashita, S. Kamohara, Y. Yamaguchi","doi":"10.7567/SSDM.2017.E-1-02","DOIUrl":"https://doi.org/10.7567/SSDM.2017.E-1-02","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"96 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80029875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency 电压控制自旋电子学存储器(VoCSM)具有高写入效率的潜力
The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI: 10.7567/SSDM.2017.A-6-01
M. Shimizu
{"title":"Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency","authors":"M. Shimizu","doi":"10.7567/SSDM.2017.A-6-01","DOIUrl":"https://doi.org/10.7567/SSDM.2017.A-6-01","url":null,"abstract":"We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned spin-Hall structure, the cell has the critical switching current (Ic) of 200 μA at 20 nsec for an MTJ size of 50×150 nm 2 . The value is comparable to that for matured STT-MRAM with the similar dimension. By applying a voltage to the MTJ, Ic was modulated due to the voltage-controlled magnetic anisotropy (VCMA) effect and the Ic reduction was 50 μA at -0.8 V. It is concluded that using both the spin Hall effect and the VCMA effect, the VoCSM has a potential of high write-efficiency.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84490814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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