The Japan Society of Applied Physics最新文献

筛选
英文 中文
Frequency-response curves of micropatterned hippocampal neurons: Effect of cell morphology on membrane impedance 海马微纹神经元的频率响应曲线:细胞形态对膜阻抗的影响
The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI: 10.7567/SSDM.2017.F-4-04
R. Matsumura, Hideaki Yamamoto, S. Katsurabayashi, M. Niwano, A. Hirano-Iwata
{"title":"Frequency-response curves of micropatterned hippocampal neurons: Effect of cell morphology on membrane impedance","authors":"R. Matsumura, Hideaki Yamamoto, S. Katsurabayashi, M. Niwano, A. Hirano-Iwata","doi":"10.7567/SSDM.2017.F-4-04","DOIUrl":"https://doi.org/10.7567/SSDM.2017.F-4-04","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84879928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Shape changes of azobenzene particles induced by linearly polarized laser light 线偏振激光诱导偶氮苯颗粒形状的变化
The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI: 10.7567/ssdm.2017.b-1-06
Y. Ohdaira
{"title":"Shape changes of azobenzene particles induced by linearly polarized laser light","authors":"Y. Ohdaira","doi":"10.7567/ssdm.2017.b-1-06","DOIUrl":"https://doi.org/10.7567/ssdm.2017.b-1-06","url":null,"abstract":"Microparticles of azobenzene molecules generated using the colloidal method were deformed by linearly polarized laser light. The shape of the particles was changed based on the selection of the polarization direction of incident light. The fabrication characteristics of the azo particles were investigated under various optical setups of the laser to obtain the desired shapes.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84951299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical Investigation of the Performance Improvement in GeSn/SiGeSn hetero Line Tunneling FET (HL-TFET) GeSn/SiGeSn异质线隧穿场效应晶体管(HL-TFET)性能提升的理论研究
The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI: 10.7567/SSDM.2017.PS-3-11
Huiyuan Wang, G. Han, Y. Liu, C. Zhang, Jincheng Zhang, Y. Hao
{"title":"Theoretical Investigation of the Performance Improvement in GeSn/SiGeSn hetero Line Tunneling FET (HL-TFET)","authors":"Huiyuan Wang, G. Han, Y. Liu, C. Zhang, Jincheng Zhang, Y. Hao","doi":"10.7567/SSDM.2017.PS-3-11","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-3-11","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84985725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of reaction kinetics at GeO 2 /Si for high-performance SiGe gate stacks 高性能SiGe栅极堆在GeO 2 /Si下反应动力学的影响
The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI: 10.7567/ssdm.2017.k-3-03
W. Song
{"title":"Impact of reaction kinetics at GeO 2 /Si for high-performance SiGe gate stacks","authors":"W. Song","doi":"10.7567/ssdm.2017.k-3-03","DOIUrl":"https://doi.org/10.7567/ssdm.2017.k-3-03","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85738512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advanced Packaging Technology to Address Micro-bump Solder Bonding and Warpage in Large-die 3D IC using 22nm ULK Dielectrics 采用22nm ULK电介质的先进封装技术解决大芯片3D集成电路中的微凸点焊合和翘曲问题
The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI: 10.7567/SSDM.2017.H-5-01
K. Sakuma
{"title":"Advanced Packaging Technology to Address Micro-bump Solder Bonding and Warpage in Large-die 3D IC using 22nm ULK Dielectrics","authors":"K. Sakuma","doi":"10.7567/SSDM.2017.H-5-01","DOIUrl":"https://doi.org/10.7567/SSDM.2017.H-5-01","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"122 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80784002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chemical Sensing using Graphene-based Surface-Acoustic-Wave Sensor 基于石墨烯表面声波传感器的化学传感
The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI: 10.7567/SSDM.2017.J-4-05
S. Okuda, T. Ono, Y. Kanai, M. Shimatani, S. Ogawa, T. Ikuta, K. Inoue, K. Maehashi, K. Matsumoto
{"title":"Chemical Sensing using Graphene-based Surface-Acoustic-Wave Sensor","authors":"S. Okuda, T. Ono, Y. Kanai, M. Shimatani, S. Ogawa, T. Ikuta, K. Inoue, K. Maehashi, K. Matsumoto","doi":"10.7567/SSDM.2017.J-4-05","DOIUrl":"https://doi.org/10.7567/SSDM.2017.J-4-05","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"53 2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78495776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 120dBΩ 16MHz Pseudo Differential CMOS Analog Front End Circuit for Optical Probe Current Sensor 用于光探头电流传感器的120dBΩ 16MHz伪差分CMOS模拟前端电路
The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI: 10.7567/SSDM.2017.G-8-03
Takaharu Uekura, K. Oyanagi, M. Sonehara, Toshiro Sato, K. Miyaji
{"title":"A 120dBΩ 16MHz Pseudo Differential CMOS Analog Front End Circuit for Optical Probe Current Sensor","authors":"Takaharu Uekura, K. Oyanagi, M. Sonehara, Toshiro Sato, K. Miyaji","doi":"10.7567/SSDM.2017.G-8-03","DOIUrl":"https://doi.org/10.7567/SSDM.2017.G-8-03","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"45 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72826349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Line Beam Scanner using Slow-Light Waveguides in Si Photonics 在硅光子学中使用慢光波导的线束扫描器
The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI: 10.7567/SSDM.2017.H-8-04
T. Baba
{"title":"Line Beam Scanner using Slow-Light Waveguides in Si Photonics","authors":"T. Baba","doi":"10.7567/SSDM.2017.H-8-04","DOIUrl":"https://doi.org/10.7567/SSDM.2017.H-8-04","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"61 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73176766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characteristics of Heavily Phosphorus-doped Gradient Si-rich Oxide Multilayer Thin Film Structure by Spin-on Method 重磷掺杂梯度富硅氧化物多层薄膜结构的自旋特性研究
The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI: 10.7567/ssdm.2017.c-1-04
P. Huang
{"title":"Characteristics of Heavily Phosphorus-doped Gradient Si-rich Oxide Multilayer Thin Film Structure by Spin-on Method","authors":"P. Huang","doi":"10.7567/ssdm.2017.c-1-04","DOIUrl":"https://doi.org/10.7567/ssdm.2017.c-1-04","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"68 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73289636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Determination of Dzyaloshinskii-Moriya Interaction Energy by Extended Droplet Model 扩展液滴模型测定Dzyaloshinskii-Moriya相互作用能
The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI: 10.7567/SSDM.2017.A-2-02
S. Kim
{"title":"Determination of Dzyaloshinskii-Moriya Interaction Energy by Extended Droplet Model","authors":"S. Kim","doi":"10.7567/SSDM.2017.A-2-02","DOIUrl":"https://doi.org/10.7567/SSDM.2017.A-2-02","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"179 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80092715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信