{"title":"Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency","authors":"M. Shimizu","doi":"10.7567/SSDM.2017.A-6-01","DOIUrl":null,"url":null,"abstract":"We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned spin-Hall structure, the cell has the critical switching current (Ic) of 200 μA at 20 nsec for an MTJ size of 50×150 nm 2 . The value is comparable to that for matured STT-MRAM with the similar dimension. By applying a voltage to the MTJ, Ic was modulated due to the voltage-controlled magnetic anisotropy (VCMA) effect and the Ic reduction was 50 μA at -0.8 V. It is concluded that using both the spin Hall effect and the VCMA effect, the VoCSM has a potential of high write-efficiency.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Japan Society of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/SSDM.2017.A-6-01","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned spin-Hall structure, the cell has the critical switching current (Ic) of 200 μA at 20 nsec for an MTJ size of 50×150 nm 2 . The value is comparable to that for matured STT-MRAM with the similar dimension. By applying a voltage to the MTJ, Ic was modulated due to the voltage-controlled magnetic anisotropy (VCMA) effect and the Ic reduction was 50 μA at -0.8 V. It is concluded that using both the spin Hall effect and the VCMA effect, the VoCSM has a potential of high write-efficiency.