Detection of electron trapping/detrapping in MoS 2 FET by high time-resolved I-V measurement

Abstract

For exploring the origin for the interface states in MoS2 FET, the transient response of MOS capacitor to ultra-fast pulsed top gate voltage was studied with high time resolution current measurement system. The difference of time constant originated from trapping and detrapping of electrons on interface states was detected, which cannot be measured in C-V measurement.