Hot-carrier Induced Drastic Off-state Leakage Current Degradation in STI-based N-channel LDMOS

Abstract

Abstract In this paper, hot-carrier (HC) induced drastic off-state leakage current (Ioff) degradation for the LDMOS is found and the mechanism is also investigated in detail. Continuous on-state drain current flow of the LDMOS generates the HC which is trapped in the STI, and causes the drastic increase of the Ioff for the LDMOS. Therefore, HC induced drastic Ioff increase should be taken into account for the LDMOS design.