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Transferred Graphene Monolayer to β-Ga2O3 as a Diffusion Barrier for Base Power Device Applications
IF 17.1 1区 材料科学
ACS Nano Pub Date : 2025-02-26 DOI: 10.1021/acsnano.4c16458
Madani Labed, Bo-In Park, Jekyung Kim, Jang Hyeok Park, Ji Young Min, Ho Jung Jeon, Jeehwan Kim, You Seung Rim
{"title":"Transferred Graphene Monolayer to β-Ga2O3 as a Diffusion Barrier for Base Power Device Applications","authors":"Madani Labed, Bo-In Park, Jekyung Kim, Jang Hyeok Park, Ji Young Min, Ho Jung Jeon, Jeehwan Kim, You Seung Rim","doi":"10.1021/acsnano.4c16458","DOIUrl":"https://doi.org/10.1021/acsnano.4c16458","url":null,"abstract":"The quality of the metal contact of devices can be significantly improved through high-temperature annealing, which enhances the crystal structure and reduces contamination. However, high-temperature annealing can adversely deteriorate the metal/semiconductor interface, resulting in the oxidation of the metal by the interdiffusion of oxygen atoms. Here, we explored the oxidation of the tungsten (W) contact interface on the β-Ga<sub>2</sub>O<sub>3</sub> epitaxial layer after high-temperature annealing, causing the electrical instability of W/β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes (SBDs). To address the challenge posed by the trade-off between the improvement of the tungsten’s crystalline structure and the oxidation of the tungsten surface after annealing, we proposed to exfoliate and transfer graphene to β-Ga<sub>2</sub>O<sub>3</sub> utilizing a layer-resolved graphene transfer (LRGT) technique as an oxygen diffusion barrier for the surface of β-Ga<sub>2</sub>O<sub>3</sub>. The insertion of a graphene monolayer has exhibited a clean and abrupt W/β-Ga<sub>2</sub>O<sub>3</sub> interface without oxygen intermixing. This resulted in a stable leakage current for β-Ga<sub>2</sub>O<sub>3</sub> SBD, approximately 4.34 × 10<sup>–5</sup> A/cm<sup>2</sup>, 2.97 × 10<sup>–5</sup> A/cm<sup>2</sup>, and 2.55 × 10<sup>–5</sup> A/cm<sup>2</sup> for as-deposited, 400 °C-annealed, and 600 °C-annealed devices, respectively. Additionally, a consistent Schottky barrier height of approximately 0.80 eV and an ideality factor of 2 were maintained across all devices. Notably, the breakdown voltage remained stable at approximately −200 V, which is relatively low compared to other reported β-Ga<sub>2</sub>O<sub>3</sub> devices. However, the key achievement of our work is the minimal dependence of the device’s performance on annealing temperature, a result directly attributed to the incorporation of the graphene monolayer. This highlights the primary objective of using graphene: to enhance the thermal stability of β-Ga<sub>2</sub>O<sub>3</sub>-based devices, facilitating more reliable performance in high-temperature environments. Furthermore, the insertion of a graphene monolayer resulted in heightened thermal stability, allowing devices to operate reliably up to a temperature of 150 °C, with stable Schottky barrier height and ideality factor in stark contrast to their counterparts without the graphene Schottky barrier diode. Utilizing SILVACO TCAD simulations, we observed a crucial role played by the graphene monolayer in significantly improving heat dissipation in β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes. These unchanging device parameters, subsequent to the insertion of a graphene monolayer, provide a compelling explanation for the role of the graphene monolayer as an effective diffusion barrier material for β-Ga<sub>2</sub>O<sub>3</sub> for improving its application in high-power devices.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"210 1","pages":""},"PeriodicalIF":17.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143506833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanoparticle-Mediated Toll-Like Receptor Activation and Dual Immune Checkpoint Downregulation for Potent Cancer Immunotherapy
IF 17.1 1区 材料科学
ACS Nano Pub Date : 2025-02-26 DOI: 10.1021/acsnano.4c16542
Jing Liu, Zhihao Zhao, Richard Zanni, Xiaomin Jiang, Ralph R. Weichselbaum, Wenbin Lin
{"title":"Nanoparticle-Mediated Toll-Like Receptor Activation and Dual Immune Checkpoint Downregulation for Potent Cancer Immunotherapy","authors":"Jing Liu, Zhihao Zhao, Richard Zanni, Xiaomin Jiang, Ralph R. Weichselbaum, Wenbin Lin","doi":"10.1021/acsnano.4c16542","DOIUrl":"https://doi.org/10.1021/acsnano.4c16542","url":null,"abstract":"Dual blockade of CD47 and PD-L1 immune checkpoints has shown potential in cancer treatment, but its clinical application is hindered by the on-target off-tumor immunotoxicities of monoclonal antibodies. Herein, we report a core–shell nanoparticle, PPA/HG, comprising polyinosinic: polycytidylic acid (PPA) in the core and a cholesterol-conjugated prodrug of 3-(hydroxyolinoyl)glycine (HG) on the shell, for potent cancer immunotherapy. PPA/HG shows a long half-life in the bloodstream to efficiently accumulate in tumors, where PPA/HG rapidly releases HG and PPA. HG inhibits the histone lysine demethylase 3A/c-Myc transduction for effective CD47 and PD-L1 downregulation in cancer cells while PPA activates toll-like receptor 3 in dendritic cells and tumor-associated macrophages to promote dendritic cell maturation and macrophage repolarization. PPA/HG promotes the infiltration and activation of effector T lymphocytes, meanwhile decreasing the population of immunosuppressive regulatory T cells. Systemic administration of PPA/HG significantly inhibits the progression of orthotopic triple-negative breast cancer and pancreatic ductal adenocarcinoma with minimal side effects.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"35 1","pages":""},"PeriodicalIF":17.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143506834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Current and Carrier Densities in 2D MoS2/AlScN Field-Effect Transistors via Ferroelectric Gating and Ohmic Contacts
IF 17.1 1区 材料科学
ACS Nano Pub Date : 2025-02-26 DOI: 10.1021/acsnano.4c17301
Seunguk Song, Kwan-Ho Kim, Rachael Keneipp, Myeongjin Jung, Nicholas Trainor, Chen Chen, Jeffrey Zheng, Joan M. Redwing, Joohoon Kang, Marija Drndić, Roy H. Olsson III, Deep Jariwala
{"title":"High Current and Carrier Densities in 2D MoS2/AlScN Field-Effect Transistors via Ferroelectric Gating and Ohmic Contacts","authors":"Seunguk Song, Kwan-Ho Kim, Rachael Keneipp, Myeongjin Jung, Nicholas Trainor, Chen Chen, Jeffrey Zheng, Joan M. Redwing, Joohoon Kang, Marija Drndić, Roy H. Olsson III, Deep Jariwala","doi":"10.1021/acsnano.4c17301","DOIUrl":"https://doi.org/10.1021/acsnano.4c17301","url":null,"abstract":"Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded nonvolatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of FeFETs can be limited by a charge imbalance between the ferroelectric layer and the channel and, for low-dimensional semiconductors, also by a high contact resistance between the metal electrodes and the channel. Here, we report a significant enhancement in performance of contact-engineered FeFETs with a 2D MoS<sub>2</sub> channel and a ferroelectric Al<sub>0.68</sub>Sc<sub>0.32</sub>N (AlScN) gate dielectric. Replacing Ti with In contact electrodes results in a 5-fold increase in on-state current (∼120 μA/μm at 1 V) and on-to-off ratio (∼2 × 10<sup>7</sup>) in the FeFETs. In addition, the high carrier concentration in the MoS<sub>2</sub> channel during the on-state (&gt;10<sup>14</sup> cm<sup>–2</sup>) owing to the large remnant polarization of AlScN facilitates the observation of a metal-to-insulator electronic phase transition in monolayer MoS<sub>2</sub> permitting observation of high field-effect mobility (&gt;100 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>) at cryogenic temperatures. Our work and devices broaden the potential of FeFETs and provide a platform to implement high-carrier-density transport in a 2D channel.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"25 1","pages":""},"PeriodicalIF":17.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143506835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cobalt-Cluster-Triggered Exfoliation for Ultrathin Metal–Covalent Organic Framework Nanosheets
IF 17.1 1区 材料科学
ACS Nano Pub Date : 2025-02-26 DOI: 10.1021/acsnano.4c18992
Xinzhu Jiang, Xinyue Qu, Yucong Chen, Xiang Li, Shi Wang, Rui Tang, Jie Luo, Baofu Ding, Gen Zhang, Ling Qiu
{"title":"Cobalt-Cluster-Triggered Exfoliation for Ultrathin Metal–Covalent Organic Framework Nanosheets","authors":"Xinzhu Jiang, Xinyue Qu, Yucong Chen, Xiang Li, Shi Wang, Rui Tang, Jie Luo, Baofu Ding, Gen Zhang, Ling Qiu","doi":"10.1021/acsnano.4c18992","DOIUrl":"https://doi.org/10.1021/acsnano.4c18992","url":null,"abstract":"Metal–covalent organic frameworks (MCOFs), an emerging type of porous material, have the combined advantages of metal–organic frameworks (MOFs) and covalent organic frameworks (COFs). Of particular interest are MCOF nanosheets with two-dimensional morphology, whose fully exposed active sites and quasi-molecular size are expected to exhibit maximum functionality for a wide range of applications. However, due to their strong interlayer coupling and the potential structural damage during the synthesis process, the preparation of MCOF nanosheets has rarely been reported. Here, we demonstrate a cobalt-cluster-triggered chemical exfoliation strategy to directly prepare ultrathin MCOF nanosheets from bulk COFs. By the reaction of cobalt carbonyl with alkynyl-based COFs at room temperature, ultrathin MCOF nanosheets are constructed under mild conditions. The mechanism for direct growth of MCOF nanosheets includes the formation of stable cobalt clusters within the COF skeletons, which alters the alkynyl bonds and their related dihedral angle and disrupts the interlayer interactions. Consequently, the bulk COFs are directly converted into MCOF nanosheets, with a yield of 40%, an average lateral size of 0.8 μm, and an average thickness of 1.6 nm. This strategy lays the foundation for the preparation and application of MCOF nanosheets by treating alkynyl-based COFs with cobalt carbonyl.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"90 1","pages":""},"PeriodicalIF":17.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143506944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All-Fiber Volatile Organics-Perceptive Actuators
IF 17.1 1区 材料科学
ACS Nano Pub Date : 2025-02-26 DOI: 10.1021/acsnano.4c16330
Shuang Wang, Hao Liu, Yufan Zhang, Mengjie Wu, Yue Zhang, Jiwei Zhang, Xinran Zhou, Jiaqing Xiong
{"title":"All-Fiber Volatile Organics-Perceptive Actuators","authors":"Shuang Wang, Hao Liu, Yufan Zhang, Mengjie Wu, Yue Zhang, Jiwei Zhang, Xinran Zhou, Jiaqing Xiong","doi":"10.1021/acsnano.4c16330","DOIUrl":"https://doi.org/10.1021/acsnano.4c16330","url":null,"abstract":"Soft robots with real-time volatile organic compound (VOC) perceptivity are promising for dynamic hazard detection. However, reconciling VOC-responsive actuation with an autonomous perception remains challenging. Inspired by <i>Victoria amazonica</i>, which blooms and closes with synchronous color change under environmental stimulations, we developed a solvatophore-induced solvatochromic-piezoelectric material by synthesizing a solvatochromic molecule-modified palygorskite-enhanced polyvinylidene difluoride and realized a VOC-responsive all-fiber actuator with solvatochromic and piezoelectric properties for cooperative visual and electrical perception of volatile organics. Under VOCs, the actuator exhibits bidirectional bending, obvious and stable color change, and characteristic piezoelectric output, allowing the identification of the type and concentration of the VOC. The solvatochromic-piezoelectric actuator demonstrates a large bending curvature of 4.63 cm<sup>–1</sup>, an ultrafast response speed of up to 4.36 cm<sup>–1</sup> s<sup>–1</sup>, and excellent stability of 1500 actuation cycles without fatigue, with synchronous VOC-induced piezoelectric output reflecting actuation conditions. VOC-responsive solvatochromic and piezoelectric sensing, manipulation, and robots were demonstrated as applications. The VOC-triggered soft robot demonstrates stable motion with synchronous piezoelectric output, capable of autonomously perceiving and responding to environmental VOC. This work presents a widely applicable interactive visual-electronic VOC detection strategy for safety, health, and environmental protection, which could also inspire the exploitation of high-performance responsive fiber materials.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"16 1","pages":""},"PeriodicalIF":17.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Machine Learning-Aided Intelligent Monitoring of Multivariate miRNA Biomarkers Using Bipolar Self-powered Sensors
IF 17.1 1区 材料科学
ACS Nano Pub Date : 2025-02-26 DOI: 10.1021/acsnano.4c16423
Jing Xu, Xinqi Luo, Hanxiao Chen, Bin Guo, Zhenlong Wang, Fu Wang
{"title":"Machine Learning-Aided Intelligent Monitoring of Multivariate miRNA Biomarkers Using Bipolar Self-powered Sensors","authors":"Jing Xu, Xinqi Luo, Hanxiao Chen, Bin Guo, Zhenlong Wang, Fu Wang","doi":"10.1021/acsnano.4c16423","DOIUrl":"https://doi.org/10.1021/acsnano.4c16423","url":null,"abstract":"Breast cancer has become the most prevalent form of cancer among women on a global scale. The early and timely diagnosis of breast cancer is of the utmost importance for improving the survival rate of patients with this disease. The occurrence of breast cancer is typically accompanied by the dysregulation of multiple microRNA (miRNA) expression profiles. Consequently, simultaneous detection of multiple miRNAs is vital for the early and accurate diagnosis of breast cancer. In this study, a bipolar self-powered sensor was developed for the simultaneous detection of miRNA-451 and miRNA-145 breast cancer biomarkers based on the specific catalytic properties of enzymes. Selenides with a microporous hollow cubic structure were designed and prepared, which can markedly enhance the enzyme load and activity, as well as detection sensitivity, due to their extensive surface area and three-dimensional porous channel. The designed bipolar self-powered sensor platform is integrated into the commercial chip, and the signal is presented in the smartphone interface, thereby enabling real-time and continuous monitoring. Furthermore, machine learning was utilized to predict miRNA detection, which encompasses numerous stages, including data collection, feature extraction, model training, and validation. In comparison to the limited sensing efficiency of self-powered biosensors driven by enzyme biofuel cells, our bipolar self-powered sensor achieved simultaneous quantitative analysis of multiple miRNA targets, thereby providing a robust tool for a more comprehensive understanding of miRNA function and its association with cancers.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"51 1","pages":""},"PeriodicalIF":17.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-Anchoring Process to Construct Highly-Aligned-Carbon Nanotube Transistors
IF 17.1 1区 材料科学
ACS Nano Pub Date : 2025-02-26 DOI: 10.1021/acsnano.4c17376
Jinshuai Lv, Hang Zhou, Xuezhou Ma, Fei Liu, Lian-Mao Peng, Chenguang Qiu
{"title":"Self-Anchoring Process to Construct Highly-Aligned-Carbon Nanotube Transistors","authors":"Jinshuai Lv, Hang Zhou, Xuezhou Ma, Fei Liu, Lian-Mao Peng, Chenguang Qiu","doi":"10.1021/acsnano.4c17376","DOIUrl":"https://doi.org/10.1021/acsnano.4c17376","url":null,"abstract":"Carbon nanotube (CNT) integrated circuit has recently achieved significant breakthroughs in aligned CNTs (A-CNTs) purity and density, driving notable improvements in transistor on-state performance and integration density. However, the performance of A-CNT transistors remains critically constrained by nanotube mutual stacking and aggregation during field effect transistors (FETs) fabrication, which results in degraded off-state performance in short-channel FETs. In this study, we propose an innovative self-anchoring process (SAP), yttrium oxide (YO<sub><i>x</i></sub>) sacrificial layer anchoring in wet clean, and source-drain electrodes anchoring in lift-off, to fabricate the highly aligned-CNT FETs, effectively suppressing CNT stacking during fabrication. The SAP top-gate (TG) FETs show idea-aligned CNT channel after fabrication, and exhibit excellent switching characteristics, including a record-low subthreshold swing (SS) of 81 mV/decade, an on/off current ratio exceeding 6 orders of magnitude, and a peak transconductance (<i>G</i><sub>m</sub>) of 1.8 mS/μm, significantly enhancing off-state performance compared with the traditional FET fabrication process. The SAP is a promising complementary metal oxide semiconductor (CMOS)-compatible process for advanced-nodes A-CNT transistors, offering a practical pathway to constructing high-performance, low-power carbon-based integrated circuits.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"51 1","pages":""},"PeriodicalIF":17.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143506962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strain-Enabled Band Structure Engineering in Layered PtSe2 for Water Electrolysis under Ultralow Overpotential
IF 17.1 1区 材料科学
ACS Nano Pub Date : 2025-02-26 DOI: 10.1021/acsnano.4c18077
Hotae Jeon, Hee Jung Kwon, Jaehyun Lee, Sun Kyung Han, Hyunjin Kim, Jaewon Heo, Junhwi Han, Seunghun Shin, Jiheon Park, Min Kyung Cho, Daniel J. Preston, In Soo Kim, Minho Kim, Won-Kyu Lee
{"title":"Strain-Enabled Band Structure Engineering in Layered PtSe2 for Water Electrolysis under Ultralow Overpotential","authors":"Hotae Jeon, Hee Jung Kwon, Jaehyun Lee, Sun Kyung Han, Hyunjin Kim, Jaewon Heo, Junhwi Han, Seunghun Shin, Jiheon Park, Min Kyung Cho, Daniel J. Preston, In Soo Kim, Minho Kim, Won-Kyu Lee","doi":"10.1021/acsnano.4c18077","DOIUrl":"https://doi.org/10.1021/acsnano.4c18077","url":null,"abstract":"This paper describes a simple design methodology to develop layered PtSe<sub>2</sub> catalysts for hydrogen evolution reaction (HER) in water electrolysis operating under ultralow overpotentials. This approach relies on the transfer of mechanically exfoliated PtSe<sub>2</sub> flakes to gold thin films on prestrained thermoplastic substrates. By relieving the prestrain, a tunable level of uniaxial internal compressive and tensile strain is developed in the flakes as a result of spontaneously formed surface wrinkles, giving rise to band structure modulations with overlapped values of the valence band maximum and conduction band minimum. This strain-engineered PtSe<sub>2</sub> with an optimized level of internal tensile strain amplifies the HER performance of the PtSe<sub>2</sub>, with performance far greater than that of pure platinum due to significantly reduced charge transfer resistance. Density functional theory calculations provide fundamental insight into how strain-induced band structure engineering correlates with the promoted HER activity, especially at the atomic edge sites of the materials.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"6 1","pages":""},"PeriodicalIF":17.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143506877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron–Phonon Coupling and Phonon Dynamics in Single-Layer NbSe2 on Graphene: The Role of Moiré Phonons
IF 17.1 1区 材料科学
ACS Nano Pub Date : 2025-02-26 DOI: 10.1021/acsnano.4c16399
Amjad Al Taleb, Wen Wan, Giorgio Benedek, Miguel M. Ugeda, Daniel Farías
{"title":"Electron–Phonon Coupling and Phonon Dynamics in Single-Layer NbSe2 on Graphene: The Role of Moiré Phonons","authors":"Amjad Al Taleb, Wen Wan, Giorgio Benedek, Miguel M. Ugeda, Daniel Farías","doi":"10.1021/acsnano.4c16399","DOIUrl":"https://doi.org/10.1021/acsnano.4c16399","url":null,"abstract":"The interplay between substrate interactions and electron–phonon coupling in two-dimensional (2D) materials presents a significant challenge in understanding and controlling their electronic properties. Here, we present a comparative study of the structural characteristics, phonon dynamics, and electron–phonon interactions in bulk and monolayer NbSe<sub>2</sub> on epitaxial bilayer graphene (BLG) using helium atom scattering (HAS). High-resolution helium diffraction reveals a (9 × 9)0° superstructure within the NbSe<sub>2</sub> monolayer, commensurate with the BLG lattice, while out-of-plane HAS diffraction spectra indicate a low-corrugated (3√3 × 3√3)30° substructure. By monitoring the thermal attenuation of the specular peak across a temperature range of 100 to 300 K, we determined the electron–phonon coupling constant (λ<sub>HAS</sub>) as 0.76 for bulk 2H-NbSe<sub>2</sub>. In contrast, the NbSe<sub>2</sub> monolayer on graphene exhibits a reduced λ<sub>HAS</sub> of 0.55, corresponding to a superconducting critical temperature (<i>T</i><sub>C</sub>) of 1.56 K according to the MacMillan formula, consistent with transport measurement findings. Inelastic HAS data provide, besides a set of dispersion curves of acoustic and lower optical phonons, a soft, dispersionless branch of phonons at 1.7 meV, attributed to the interface localized defects distributed with the superstructure period, thus termed Moiré phonons. Our data show that Moiré phonons contribute significantly to the electron–phonon coupling in monolayer NbSe<sub>2</sub>. These results highlight the crucial role of the BLG in the electron–phonon coupling in monolayer NbSe<sub>2</sub>, attributed to enhanced charge transfer effects, providing valuable insights into substrate-dependent electronic interactions in 2D superconductors.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"28 1","pages":""},"PeriodicalIF":17.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143506832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermodynamically Stable Synthesis of the 1T-MoS2/g-CN Superstructure with Rapid Redox Kinetics for Robust Capacitive Energy Storage
IF 17.1 1区 材料科学
ACS Nano Pub Date : 2025-02-26 DOI: 10.1021/acsnano.5c00717
Xingjiang Wu, Xude Yu, Zhicheng Tian, Hao Li, Jianhong Xu
{"title":"Thermodynamically Stable Synthesis of the 1T-MoS2/g-CN Superstructure with Rapid Redox Kinetics for Robust Capacitive Energy Storage","authors":"Xingjiang Wu, Xude Yu, Zhicheng Tian, Hao Li, Jianhong Xu","doi":"10.1021/acsnano.5c00717","DOIUrl":"https://doi.org/10.1021/acsnano.5c00717","url":null,"abstract":"Artificial superstructures with advanced physicochemical properties and electronic interfaces are of great importance for capacitive energy storage. Herein, by one-step phase transition and interfacial bridging, we achieve thermodynamically stable synthesis of the 1T-MoS<sub>2</sub>/graphitic carbon nitride (g-CN) superstructure, where the carbon atoms of g-CN are covalently bridged on molybdenum atoms of the 1T phase molybdenum disulfide (1T-MoS<sub>2</sub>) interface via C–Mo bonds. The DFT and MD calculations reveal that the 1T-MoS<sub>2</sub>/g-CN superstructure with a strong interfacial interaction (covalent character: 97%), superior electron conduction (d-band center: −1.2 eV), abundant accessible channels (free volume: 53% whole space), and expedited redox kinetics (reaction energy barriers: 0.9 eV) can enhance interfacial charge transfer and faradaic ion accumulation. Therefore, the 1T-MoS<sub>2</sub>/g-CN superstructure delivers a high specific capacitance of 2080 F g<sup>–1</sup> and excellent structural stability in KOH solution. Moreover, the solid–polymer–electrolyte chip-based 1T-MoS<sub>2</sub>/g-CN supercapacitors can achieve a large energy density (73 mWh g<sup>–1</sup>), outstanding cycling stability (91% capacitance retention after 10,000 cycles), and desired self-powered application.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"40 1","pages":""},"PeriodicalIF":17.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143506879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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