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2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)最新文献

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A new package of high-voltage cascode gallium nitride device for high-frequency applications 一种用于高频应用的新型高压级联氮化镓器件封装
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295966
F. Lee, Wenli Zhang, Xiucheng Huang, Zhengyang Liu, W. Du, Qiang Li
{"title":"A new package of high-voltage cascode gallium nitride device for high-frequency applications","authors":"F. Lee, Wenli Zhang, Xiucheng Huang, Zhengyang Liu, W. Du, Qiang Li","doi":"10.1109/IWIPP.2015.7295966","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295966","url":null,"abstract":"Lateral gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) power devices have high current density, high switching speed, and low on-resistance in comparison to the established silicon (Si)-based semiconductor devices. Using efficient GaN HEMT devices switched at high frequency in power electronic systems could lead to an increase in power density as well as a reduction in the weight, size, and cost of the system. However, conventional packaging configurations often compromise the benefits provided by high-performance GaN HEMT devices. This undesirable package-induced performance degradation is prominent in the cascode GaN device, where the combination of a high-voltage depletion-mode GaN device and low-voltage enhancement-mode Si device is needed. In this work, a new package is introduced for high-voltage cascode GaN devices and is successfully demonstrated to make the device more suitable for megahertz (MHz) operation. This packaging prototype for cascode GaN devices is fabricated in a power quad flat no-lead (PQFN) format with the new features of a stack-die structure, embedded external capacitor, and flip-chip configuration. The parasitic ringing in hard-switching turn-off and switching losses in soft-switching transitions are both effectively reduced for this newly packaged device compared with a traditional package using the same GaN and Si devices. Improved thermal dissipation capability is also realized using this new package for better reliability.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133305837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Development of a board-level integrated silicon carbide MOSFET power module for high temperature application 一种用于高温应用的板级集成碳化硅MOSFET功率模块开发
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295994
Zhiqiang Wang, Xiaojie Shi, L. Tolbert, F. Wang, Zhenxian Liang, D. Costinett, B. Blalock
{"title":"Development of a board-level integrated silicon carbide MOSFET power module for high temperature application","authors":"Zhiqiang Wang, Xiaojie Shi, L. Tolbert, F. Wang, Zhenxian Liang, D. Costinett, B. Blalock","doi":"10.1109/IWIPP.2015.7295994","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295994","url":null,"abstract":"A board-level integrated silicon carbide (SiC) MOSFET power module is developed in this work for high temperature and high power density applications. Specifically, a silicon-on-insulator (SOI) based gate driver is designed, fabricated and tested at different switching frequencies and temperatures. Also, utilizing high temperature packaging technologies, a 1200 V / 100 A SiC MOSFET phase-leg power module is built. The switching performance of the fabricated power module is fully evaluated at different temperatures up to 225 °C. Moreover, a buck converter prototype incorporating the SOI gate driver and SiC power module is built for high temperature continuous operation. The converter is operated within a wide range from 10 kHz to 100 kHz, with its junction temperature monitored by a thermo-sensitive electrical parameter (TSEP). The experimental results demonstrate that the integrated power module is able to operate at a junction temperature greater of 232 °C.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124826177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High temperature, wide bandgap full-bridge power modules for high frequency applications 适用于高频应用的高温、宽禁带全桥功率模块
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295993
Z. Cole, B. McGee, J. Stabach, S. Storkov, B. Whitaker, D. Martin, G. Falling, R. Shaw, B. Passmore
{"title":"High temperature, wide bandgap full-bridge power modules for high frequency applications","authors":"Z. Cole, B. McGee, J. Stabach, S. Storkov, B. Whitaker, D. Martin, G. Falling, R. Shaw, B. Passmore","doi":"10.1109/IWIPP.2015.7295993","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295993","url":null,"abstract":"In high frequency power conversion applications, one of the dominant mechanisms attributed to power loss is the turn-on and -off transition times. To this end, low inductance silicon carbide (SiC)-based near-hermetic and hermetic full-bridge power modules were designed to operate above standard operating temperatures. These power modules were optimized to exhibit low inductance power loops which are paramount for high frequency switching applications such as charging and power distribution systems. Three-dimensional finite-element parasitic modeling was performed to determine the parasitic impedance values of the package. In addition, the junction-to-case thermal resistance and breakdown of the thermal stack-up was modeled to determine the thermal characteristics of the package. Moreover, both power modules were designed and packaged using high temperature materials and processes such that the package housing is resistant to high temperature excursions from the die and/or ambient environment.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125742112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermal interface material evaluation for IGBT modules under realistic power cycling conditions 真实功率循环条件下IGBT模块热界面材料评价
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295991
G. Morris, M. Polakowski, Lixiang Wei, M. Ball, Mark G. Phillips, Craig Mosey, R. Lukaszewski
{"title":"Thermal interface material evaluation for IGBT modules under realistic power cycling conditions","authors":"G. Morris, M. Polakowski, Lixiang Wei, M. Ball, Mark G. Phillips, Craig Mosey, R. Lukaszewski","doi":"10.1109/IWIPP.2015.7295991","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295991","url":null,"abstract":"The long-term reliability of the thermal interface material (TIM) between an IGBT and heat sink is a critical aspect of motor drive design and customer satisfaction. Studies in the literature have focused on TIM characterization using idealized flat surfaces that are not representative of the wavy mounting surface found on IGBT base plates. In the authors' experience, there is limited correlation between TIM data sheet specifications obtained using idealized flat surfaces and the actual thermal and long-term reliability performance observed in the field. This paper describes the test process and test fixture designed to evaluate TIMs under real world power cycling conditions using actual IGBT modules and heat sink surfaces. Commercially available non-silicone oil thermal greases from three suppliers were tested with the TIM thermal resistance and junction temperatures measured approximately every 5000 cycles. A thermal grease was found to be most stable over 15,000 power cycles. Furthermore, chemical analyses indicated that the best-performing TIM has the smallest particle size of the three manufacturers.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129642192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A new generation of power semiconductor packaging paves the way for higher efficiency power conversion 新一代功率半导体封装为更高效率的功率转换铺平了道路
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295988
A. Lidow, D. Reusch
{"title":"A new generation of power semiconductor packaging paves the way for higher efficiency power conversion","authors":"A. Lidow, D. Reusch","doi":"10.1109/IWIPP.2015.7295988","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295988","url":null,"abstract":"Power Semiconductor packaging has been saddled with five key complaints since the advent of the solid state transistor; (1) packages have too much resistance, (2) they have too much inductance, (3) they take up too much space, (4) they have poor thermal properties that limit heat extraction, and (5) they cost too much. In 2010 enhancement mode gallium nitride power transistors were introduced without a surrounding plastic package. The unique characteristics of the lateral GaN-on-silicon transistors enable the active devices to be protected from the normal environmental abuses without a cumbersome molded plastic package. These chipscale packages, with a Land Grid Array (LGA) format, eliminate the parasitic inductance and resistance of the semiconductor package as well as the space occupied by a conventional package. In this paper we quantify the advantages of chipscale packaging in these five areas of complaint and show how system performance benefits in high frequency DC-DC conversion.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126368158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Development of medium voltage SiC power technology for next generation power electronics 新一代电力电子中压SiC电源技术的发展
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295981
E. van Brunt, D. Grider, V. Pala, S. Ryu, J. Casady, J. Palmour
{"title":"Development of medium voltage SiC power technology for next generation power electronics","authors":"E. van Brunt, D. Grider, V. Pala, S. Ryu, J. Casady, J. Palmour","doi":"10.1109/IWIPP.2015.7295981","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295981","url":null,"abstract":"Recent developments in 3.3 kV to 15 kV 4H-SiC MOSFETs are discussed, and device merits are compared to traditional Silicon IGBT technology, as well as 15 kV SiC n-IGBTs. Performance near theoretical limits was achieved for the 4H-SiC MOSFETs; bipolar 4H-SiC devices were analyzed and were found to handle higher currents at low frequencies.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"116 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120974009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Accurate characterization of switching losses in high-speed, high-voltage Power MOSFETs 高速、高压功率mosfet中开关损耗的精确表征
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295987
A. Arribas, M. Krishnamurthy, K. Shenai
{"title":"Accurate characterization of switching losses in high-speed, high-voltage Power MOSFETs","authors":"A. Arribas, M. Krishnamurthy, K. Shenai","doi":"10.1109/IWIPP.2015.7295987","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295987","url":null,"abstract":"Switching losses of high voltage devices such as SiC Power MOSFETs and Si IGBTs are usually characterized using inductive switching tests. However, for SiC Power MOSFETs, the operation at high switching speed arises several issues that compromise the accuracy of the values provided on the Datasheet for the switching losses. In this paper, these issues (load current, freewheeling diode, di/dt and parasitic inductances) will be discussed. Afterwards, a similar study will be performed for resistive switching conditions as an alternative and more robust method to characterize the switching losses of these devices. Finally, a complete map of the Turn-on and Turn-off losses of the SiC Power MOSFET SCT2080KE from Rohm will be provided.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123125111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Silver sintered double-sided cooling power package process for controlled Si power semiconductor devices with aluminum top-metallization 铝顶金属化可控硅功率半导体器件的银烧结双面冷却封装工艺
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295989
M. Barrière, S. Azzopardi, R. Roder, I. Favre, E. Woirgard, S. Bontemps, F. Le Henaff
{"title":"Silver sintered double-sided cooling power package process for controlled Si power semiconductor devices with aluminum top-metallization","authors":"M. Barrière, S. Azzopardi, R. Roder, I. Favre, E. Woirgard, S. Bontemps, F. Le Henaff","doi":"10.1109/IWIPP.2015.7295989","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295989","url":null,"abstract":"An innovative process to realize 3D packages with controlled Si-power semiconductor devices has been developed. We purpose, for the first time and based on a low-cost process, to make compatible the silver sintering process with aluminum top-metallization dice. The use of a silver epoxy resin allows to process the top metallization of silicon dice. Shear tests on diodes have demonstrated the good mechanical attachment of the silver epoxy resin on the aluminum in comparison to the bottom metallization with silver finish. Then, Si-IGBT has been interconnected in a 3D package using the same process. The static electrical characterization illustrates a very good behavior of the silver epoxy resin compared to a Si-IGBT used in a 2D package with wire-bondings.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115451951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Influence of Si/SiC device selection on losses and magnetics design in an isolated DC-DC converter 隔离型DC-DC变换器中Si/SiC器件选择对损耗和磁性设计的影响
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295980
Minyu Cai, L. Wu, D. Murthy-Bellur, M. Saeedifard, O. Wasynczuk
{"title":"Influence of Si/SiC device selection on losses and magnetics design in an isolated DC-DC converter","authors":"Minyu Cai, L. Wu, D. Murthy-Bellur, M. Saeedifard, O. Wasynczuk","doi":"10.1109/IWIPP.2015.7295980","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295980","url":null,"abstract":"Recently introduced Si/SiC devices allow switching frequencies of several MHz with switching losses comparable to those in slower Si IGBTs. The losses of different Si/SiC devices working in a full-bridge active-clamped isolated dc-dc converter with different switching frequencies are calculated and compared in order to explore the improvements in losses. Furthermore, various transformers are designed for the converter with different switching frequencies while limiting the temperature rise. The benefits of high-frequency devices can be readily illustrated by comparing the total transistor power losses and transformer sizes of the Si/SiC-based converters.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114917515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Planar-bond-all: A technology for three-dimensional integration of multiple packaging functions into advanced power modules 平面集成:一种将多种封装功能三维集成到先进电源模块中的技术
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295992
Zhenxian Liang
{"title":"Planar-bond-all: A technology for three-dimensional integration of multiple packaging functions into advanced power modules","authors":"Zhenxian Liang","doi":"10.1109/IWIPP.2015.7295992","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295992","url":null,"abstract":"A packaging approach has been developed for fabrication of power electronics modules. The multi functions of power packaging are fulfilled through three-dimensional (3-D) planar electrical interconnection, and double sided direct cooling. The further integration of these features into one packaging process has been demonstrated with highly integrated silicon (Si) and silicon carbide (SiC) phase leg power module prototypes. The comprehensive improvements in module's electrical, thermal performance and manufacturability lead to cost-effective, high efficiency, high power density power conversion in electric drive systems of modern vehicles.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124782281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
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