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2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)最新文献

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Energy and power densities of capacitors and dielectrics 电容器和电介质的能量和功率密度
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295976
D. Choi, C. Randall, E. Furman, B. Ma, U. Balachandran, Shihai Zhang, M. Lanagan
{"title":"Energy and power densities of capacitors and dielectrics","authors":"D. Choi, C. Randall, E. Furman, B. Ma, U. Balachandran, Shihai Zhang, M. Lanagan","doi":"10.1109/IWIPP.2015.7295976","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295976","url":null,"abstract":"Capacitor miniaturization is directly related to improved energy density and power density, which are determined at the component and material levels for multilayer ceramic, electrolytic and polymer film classifications. The volumetric efficiency of a capacitor depends on capacitance value, operating voltage and equivalent series resistance. Permittivity and loss are the primary material metrics governing energy and power densities of dielectric materials. High temperature capacitor reliability must be improved to close this gap in terms of scientific understanding and engineering design of these components. Power density values range enormously from 108 W/cm3 at the material level through to the application level at 50 W/cm3 at the inverter level.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123129485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Integrated gate drivers for e-mode very high power GaN transistors 用于e模甚大功率GaN晶体管的集成栅极驱动器
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295967
J. Roberts, J. Styles, Di Chen
{"title":"Integrated gate drivers for e-mode very high power GaN transistors","authors":"J. Roberts, J. Styles, Di Chen","doi":"10.1109/IWIPP.2015.7295967","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295967","url":null,"abstract":"Lateral GaN transistors that have on-chip drivers are being introduced. These are high current - 100 A/650 V devices that use redundancy techniques to achieve high yields. It is the lateral nature of these devices that enables both the driver and the redundancy circuitry to be provided. On-chip drive circuitry is beneficial because these e-mode GaN transistors can then be rapidly driven to provide synchronous low loss reverse conduction. This paper describes the required drive circuitry.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122310344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Electromagnetic interference simulations of power electronic modules 电力电子模块电磁干扰仿真
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295984
A. Dutta, S. Ang
{"title":"Electromagnetic interference simulations of power electronic modules","authors":"A. Dutta, S. Ang","doi":"10.1109/IWIPP.2015.7295984","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295984","url":null,"abstract":"At higher frequencies, EMI emissions of a power electronic module largely depend on the layout and area of the current conduction paths. In this paper, EMI simulations are compared between a coplanar module and a three-dimensional (3D) module. The EMI simulations were performed using 3D EM simulation software. The EMI emission, in terms of DC-bus bar capacitances, of a balanced and unbalanced power electronic module is investigated. It is concluded that a three-dimensional multilayer approach is more suitable for addressing the issue, both in terms of reducing parasitic inductance and minimizing EMI effects. Also, care should be taken to design balanced bus bars to minimize EMI noise.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115125032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Energy storage utilizing advanced CVD nanodiamond technology 利用先进的CVD纳米金刚石技术储能
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1007/978-3-319-48127-2_37
Stephen Minden, John R. Fraley, Lauren E. Kegley, J. Davidson, D. Kerns
{"title":"Energy storage utilizing advanced CVD nanodiamond technology","authors":"Stephen Minden, John R. Fraley, Lauren E. Kegley, J. Davidson, D. Kerns","doi":"10.1007/978-3-319-48127-2_37","DOIUrl":"https://doi.org/10.1007/978-3-319-48127-2_37","url":null,"abstract":"","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123204774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact, high-temperature, single-level power modules for 10 to 25 kV DC link voltages using silicon carbide power electronics 紧凑、高温、单级功率模块，适用于10至25千伏直流链路电压，采用碳化硅电力电子器件
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295995
C. O’Neal, Z. Cole, J. Stabach, G. Falling, P. Killeen, B. Passmore
{"title":"Compact, high-temperature, single-level power modules for 10 to 25 kV DC link voltages using silicon carbide power electronics","authors":"C. O’Neal, Z. Cole, J. Stabach, G. Falling, P. Killeen, B. Passmore","doi":"10.1109/IWIPP.2015.7295995","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295995","url":null,"abstract":"Power modules designed explicitly for silicon carbide (SiC), single level power converters between 10 and 24 kV are presented. Using silicon power electronics, multi-level converters are required to reach multiple kV DC link voltages. Multi-level converters require more complex topologies and a larger number of switches, diodes, and/or capacitors. Due to the very high blocking voltages of SiC, it is now possible to build single level converters up to 24 kV. Single level SiC converters have the potential of dramatic cost savings over multi-level silicon-based converters as the device costs of SiC are reduced. Two modules are presented here designed for 15 kV/ 120 A and 24 kV / 30 A. These modules are designed to be compact, while meeting all creepage and clearance standards for their voltage ratings, operate at 200 °C, have a very low inductance, and fast switching speed.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122964722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Short course overview: Low voltage GaN power switch modules for increased energy efficiency 短期课程概述:低电压氮化镓功率开关模块，提高能源效率
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295959
K. Shenai, D. Reusch
{"title":"Short course overview: Low voltage GaN power switch modules for increased energy efficiency","authors":"K. Shenai, D. Reusch","doi":"10.1109/IWIPP.2015.7295959","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295959","url":null,"abstract":"Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices promise significant energy and cost savings for power electronics converters than feasible with silicon power devices. Low-voltage GaN power diodes and HEMTs rated up to 650V volts are now commercially available; and GaN power devices rated up to 3.5kV are expected soon. This half-day short course will present the physics, technology, application engineering of low-voltage (<; 650V) GaN power switch modules for increased energy efficiency in a wide range of DC-DC power converter applications including computing, communication, transportation, and renewable energy integration. The design and performance of GaN power switch modules for prototype point-of-load (POL) DC-DC power converters will be discussed and tradeoffs in performance vs. cost will be critically assessed.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116063503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon high-density capacitors for power decoupling applications 用于功率去耦应用的硅高密度电容器
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295975
F. Voiron, L. Fourneaud
{"title":"Silicon high-density capacitors for power decoupling applications","authors":"F. Voiron, L. Fourneaud","doi":"10.1109/IWIPP.2015.7295975","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295975","url":null,"abstract":"Capacitors linearity and reliability at high temperature are essential for embedded Point of Load regulation applications. RL parasitic are also becoming crucial for high frequency regulators. In that perspective, we present a silicon-integrated capacitor technology enhanced for high temperature linearity and reliability. A layout approach is proposed to optimize the capacitor RL parasitic to level equivalent to best known technologies (Multilayer Ceramic Capacitors) with better frequency stability.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121749536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
SiC power devices aspects for high power density and system approach for a successful market implementation 针对SiC功率器件方面的高功率密度和系统方法，成功实现了市场
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295964
P. Friedrichs
{"title":"SiC power devices aspects for high power density and system approach for a successful market implementation","authors":"P. Friedrichs","doi":"10.1109/IWIPP.2015.7295964","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295964","url":null,"abstract":"For many years SiC power semiconductors are praised to be the revolution in power density and efficiency. Infineon as the leader in power semiconductors is fully committed to this technology, however, the actual implementation of SiC power devices is still in the beginning, based on marketing theories we are still in front of the so called chasm. So the real take off is still in front of us and to move forward the today's hurdles should be investigated and mitigated. Two main reasons seem to be responsible for this situation — on the one hand side of course the high cost of the new components compared to silicon based parts, but in addition, additional challenges appear around the semiconductors provided the benefits will be leveraged completely. One of the aspects is here the considerably enhanced power density which put a new light on cooling systems and of course the challenges which arise with the postulated increase in switching frequency, mainly in applications with high currents. The contribution will give some more inside into this matter and will sketch selected ideas how to mitigate those problems jointly between the semiconductor supplier and users.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"51 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114041776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiC MOSFET gate drive design considerations SiC MOSFET栅极驱动设计注意事项
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295969
J. Rice, J. Mookken
{"title":"SiC MOSFET gate drive design considerations","authors":"J. Rice, J. Mookken","doi":"10.1109/IWIPP.2015.7295969","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295969","url":null,"abstract":"The purpose of this paper is to provide guidance on how to design gate driver circuits for Silicon Carbide (SiC) MOSFETs. There are new commercially available SiC MOSFETs available in discrete and module packages which are much faster and more efficient than their traditional IGBT counterparts. To take full advantage of these benefits we need to understand the requirements for a new breed of gate drivers that are tailored to meet the unique drive and protection characteristics of SiC MOSFETs. Traditional IGBT based fault protection schemes such as desaturation (desat) detection can be implemented with some modifications to protect SiC MOSFETs. However, due to the higher switching speed of the new SiC devices, it is worth another look at all the design and implementation aspects of a good SiC MOSFET gate driver.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114638849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 41
Wide bandgap (WBG) semiconductor power device datasheets and circuit models 宽带隙(WBG)半导体功率器件数据表和电路模型
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI: 10.1109/IWIPP.2015.7295971
K. Shenai
{"title":"Wide bandgap (WBG) semiconductor power device datasheets and circuit models","authors":"K. Shenai","doi":"10.1109/IWIPP.2015.7295971","DOIUrl":"https://doi.org/10.1109/IWIPP.2015.7295971","url":null,"abstract":"Accurate product datasheets and circuit models of components are necessary in order to design and manufacture low cost and reliable power electronic modules (PEMs) and power converters. A detailed review of the product datasheets and available circuit models of single-chip wide bandgap (WBG) discrete power devices is presented. The WBG power devices considered include lateral GaN power transistors, vertical GaN and SiC power diodes, and vertical SiC power MOSFETs. It is shown that significant improvements in both the datasheets and circuit models are needed for rapid commercialization of WBG power switching devices. This conclusion is based on in-house measurement of commercial devices as well as detailed review and comparison of WBG product datasheets and circuit models with comparable silicon power devices.","PeriodicalId":214539,"journal":{"name":"2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128747176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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