Development of medium voltage SiC power technology for next generation power electronics

2015 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2015-05-03 DOI:10.1109/IWIPP.2015.7295981

E. van Brunt, D. Grider, V. Pala, S. Ryu, J. Casady, J. Palmour

引用次数: 7

Abstract

Recent developments in 3.3 kV to 15 kV 4H-SiC MOSFETs are discussed, and device merits are compared to traditional Silicon IGBT technology, as well as 15 kV SiC n-IGBTs. Performance near theoretical limits was achieved for the 4H-SiC MOSFETs; bipolar 4H-SiC devices were analyzed and were found to handle higher currents at low frequencies.

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新一代电力电子中压SiC电源技术的发展

讨论了3.3 kV至15 kV 4H-SiC mosfet的最新发展，并将器件优点与传统的硅IGBT技术以及15 kV SiC n-IGBT进行了比较。4H-SiC mosfet的性能接近理论极限;对双极4H-SiC器件进行了分析，发现其在低频下可以处理更高的电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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