High temperature, wide bandgap full-bridge power modules for high frequency applications

Abstract

In high frequency power conversion applications, one of the dominant mechanisms attributed to power loss is the turn-on and -off transition times. To this end, low inductance silicon carbide (SiC)-based near-hermetic and hermetic full-bridge power modules were designed to operate above standard operating temperatures. These power modules were optimized to exhibit low inductance power loops which are paramount for high frequency switching applications such as charging and power distribution systems. Three-dimensional finite-element parasitic modeling was performed to determine the parasitic impedance values of the package. In addition, the junction-to-case thermal resistance and breakdown of the thermal stack-up was modeled to determine the thermal characteristics of the package. Moreover, both power modules were designed and packaged using high temperature materials and processes such that the package housing is resistant to high temperature excursions from the die and/or ambient environment.