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AlInN/GaN a suitable HEMT device for extremely high power high frequency applications AlInN/GaN是非常适合高功率高频应用的HEMT器件
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380349
C. Gaquière, F. Medjdoub, J. Carlin, S. Vandenbrouck, E. Delos, E. Feltin, N. Grandjean, E. Kohn
{"title":"AlInN/GaN a suitable HEMT device for extremely high power high frequency applications","authors":"C. Gaquière, F. Medjdoub, J. Carlin, S. Vandenbrouck, E. Delos, E. Feltin, N. Grandjean, E. Kohn","doi":"10.1109/MWSYM.2007.380349","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380349","url":null,"abstract":"AlInN/GaN unpassivated high electron mobility transistor (HEMT) on sapphire substrate has yielded a maximum drain current density close to 2 A/mm in steady state. Superior gate length downscaling than AlGaN/GaN devices has been observed owing to the possibility of the use of ultra thin barrier layer while keeping extremely high sheet carrier density. We reached an extrinsic current gain cut-off frequency of 70 GHz for a 0.08 mum gate length device. Large signal measurements reveal a relatively low RF power dispersion. Indeed, at 10 GHz we performed for the first time power measurements on such a HEMT structure. We achieved 1.5 W/mm output power density at low bias condition (VDS = 15V) in agreement with the expected power in spite of a strong thermal effect due to the sapphire substrate, a large leakage current in the Schottky diode characteristic and a low buffer layer resistivity. These results demonstrate the great potential of this structure for extremely high power high frequency applications.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121858081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
An X-band Low Phase Noise Oscillator Employing a Four-pole Elliptic-Response Microstrip Bandpass Filter 采用四极椭圆响应微带带通滤波器的x波段低相位噪声振荡器
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380564
Jonghoon Choi, Meng-Hung Chen, A. Mortazawi
{"title":"An X-band Low Phase Noise Oscillator Employing a Four-pole Elliptic-Response Microstrip Bandpass Filter","authors":"Jonghoon Choi, Meng-Hung Chen, A. Mortazawi","doi":"10.1109/MWSYM.2007.380564","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380564","url":null,"abstract":"In this paper, a low phase noise planar oscillator employing an elliptic bandpass filter as a frequency stabilization element within its feedback loop is presented. The oscillator phase noise is significantly reduced by taking advantage of the group delay peaks formed at the passband edges of an elliptic filter. An X-band oscillator using a SiGe HBT packaged transistor has been designed and tested. At the oscillation frequency of 9 GHz, the measured phase noise is -140 dBc/Hz at 1 MHz offset frequency. The oscillator exhibits an output power of 3.5 dBm with a figure of merit of -204.4 dBc/Hz.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"557 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115777759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Robust Extraction of Access Elements for Broadband Small-signal FET Models 宽带小信号场效应管模型接入单元的鲁棒提取
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380057
A. Parker, S. Mahon
{"title":"Robust Extraction of Access Elements for Broadband Small-signal FET Models","authors":"A. Parker, S. Mahon","doi":"10.1109/MWSYM.2007.380057","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380057","url":null,"abstract":"A small-signal transistor model extraction technique is proposed. It partitions access and intrinsic elements with a more accurate network for the intrinsic section. This resolves problems of nonphysical parameters and inconsistencies across bias. The technique uses low gate and zero drain bias measurements to directly determine an access network. There is no need to apply electrical stress to the device during measurement. The procedure is deterministic.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132013040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Characterization of SAW Duplexer Inserts for LTCC RF Front-End Modules by Simulation and Measurement LTCC射频前端模块SAW双工器插片的仿真与测量
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380116
R. Koch, F. M. Pitschi, J. Kiwitt, R. Weigel
{"title":"Characterization of SAW Duplexer Inserts for LTCC RF Front-End Modules by Simulation and Measurement","authors":"R. Koch, F. M. Pitschi, J. Kiwitt, R. Weigel","doi":"10.1109/MWSYM.2007.380116","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380116","url":null,"abstract":"The growing demand for miniaturization of mobile terminals incites design engineers to integrate the required functionality of stand-alone active and passive discrete/integrated components of the RF section, such as, e.g., antenna switches, power amplifiers, and SAW filters, into compact modules. Although being a monolithic and complex component in which all sub-systems, formerly stand-alone components, are interlocked, each of them has to be designed and optimized individually and be pieced together in a later step of the development process for the final optimization. Therefore, an efficient design strategy and a neutral test environment for the characterization by both measurement and simulation of the isolated sub-systems are needed. Being able to provide this would allow design engineers to predict reliably the properties of the sub-systems integrated in the target module. In this paper we report on practical and theoretical issues regarding the integration of duplexing functionality into LTCC modules by means of duplexer inserts. Duplexer inserts provide the necessary potential for further height reduction that is required by future developments of modules. One of the key issues that we faced was the precise characterization of the performance of duplexer inserts in the module by both measurement and simulation. We investigated models of different complexity and, therefore, different accuracy and present first experimental results of the characterization of a W-CDMA 2100 duplexer insert. Hereto, we divided the module into its subsystems and applied our new, specifically designed, neutral test/design environments for duplexer inserts in order to evaluate the usability of different approaches. We obtained the best agreement of simulation and measurement for the most complex model.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132215343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A New Miniaturized Type of Three-Dimensional SiGe 90° Hybrid Coupler at 20 GHz using The Meandering TFMS and Stripline Shunt Stub Loading 一种新型20 GHz微型化三维SiGe 90°混合耦合器，采用弯曲TFMS和带状线分流短段加载
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380211
K. Hettak, G. Morin, M. Stubbs
{"title":"A New Miniaturized Type of Three-Dimensional SiGe 90° Hybrid Coupler at 20 GHz using The Meandering TFMS and Stripline Shunt Stub Loading","authors":"K. Hettak, G. Morin, M. Stubbs","doi":"10.1109/MWSYM.2007.380211","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380211","url":null,"abstract":"This paper proposes a new scheme for realizing a compact 3-D 90deg hybrid coupler based on the compact meandered thin-film microstrip (TFMS) transmission line and stripline shunt stub loading, and successfully demonstrated by using the multi-layer 0.35 mum SiGe HBT Jazz process. The proposed coupler takes advantage of the multi-level metallization processes offered in SiGe technology. The intrinsic area of the fabricated 3-D hybrid coupler is significantly reduced and has shown a size reduction of 92% in circuit area at 20 GHz compared to that of a conventional hybrid coupler using the TFMS configuration. Experimental results are presented in support of the novel miniature coupler.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132361796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Degradation-Mode Analysis for Highly Reliable GaN-HEMT 高可靠性GaN-HEMT的退化模式分析
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.379982
Y. Inoue, S. Masuda, M. Kanamura, T. Ohki, K. Makiyama, N. Okamoto, K. Imanishi, T. Kikkawa, N. Hara, H. Shigematsu, K. Joshin
{"title":"Degradation-Mode Analysis for Highly Reliable GaN-HEMT","authors":"Y. Inoue, S. Masuda, M. Kanamura, T. Ohki, K. Makiyama, N. Okamoto, K. Imanishi, T. Kikkawa, N. Hara, H. Shigematsu, K. Joshin","doi":"10.1109/MWSYM.2007.379982","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.379982","url":null,"abstract":"We analyzed the degradation mode of GaN-HEMTs. We observed the sudden degradation to make serious influence on the reliability. In this paper, we proposed a new approach to eliminate sudden-degradation devices. By measuring the gate leakage current before stress test, we can predict the sudden degradation. We also discussed the gate leakage current factor, for example, the surface hexagonal pits. Using this eliminating method, we could select the reliable devices with a life of over 1 times 106 hours at high-temperature of 200degC.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130129595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
On the Design of Radar Absorbing Materials Using Left-Handed Transmission Line 基于左手传输线的雷达吸波材料设计
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380531
Hang Wang, Wei Tang, Z. Shen
{"title":"On the Design of Radar Absorbing Materials Using Left-Handed Transmission Line","authors":"Hang Wang, Wei Tang, Z. Shen","doi":"10.1109/MWSYM.2007.380531","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380531","url":null,"abstract":"A novel radar absorbing material is designed by combining a high impedance surface and a transitional structure. The high impedance surface consists of a two-dimensional periodic array of unit cells that are implemented using a left-handed transmission line printed on a dielectric substrate with lumped elements. A transition between free space and the vertically placed microstrip line is designed using a horizontal strip to ensure that the incident electromagnetic energy can be strongly coupled to the guided wave in the microstrip line. A chip resistor is added in the printed microstrip line of each unit cell to absorb the electromagnetic energy. Both simulated and measured radar cross section results of a conducting plate with 4 times 8 cells show that the absorber has a reduction of 10 dB over a bandwidth 50% at the center frequency of 2 GHz. The thickness of the designed absorber is only 0.13 free-space wavelength at the center frequency. Simulation results of another designed absorber show that it has a wider bandwidth about 92% using a double-substrate structure.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130199233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Composite Patch Array Antenna with built-in Polarizer for Reducing Road Clutter Noises of 76 GHz Automotive Radars 用于降低76 GHz汽车雷达道路杂波噪声的内置偏振片复合贴片阵列天线
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380473
H. Shinoda, H. Kondoh
{"title":"Composite Patch Array Antenna with built-in Polarizer for Reducing Road Clutter Noises of 76 GHz Automotive Radars","authors":"H. Shinoda, H. Kondoh","doi":"10.1109/MWSYM.2007.380473","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380473","url":null,"abstract":"A composite patch array antenna with built-in polarizer has been newly proposed and developed to reduce road clutter noise of 76 GHz automotive radars by 20 dB, where a polarizer is placed in front of Tx and Rx patch arrays within their reactive near-field region to suppress cross-polarized sidelobe radiation from feeding lines of the patch arrays while maintaining a low-profile characteristic with 4 mm thickness. Additional metal-lined absorbers within the composite antenna structure, while terminating cross-polarized waves undesirably excited by the patch arrays, also serve as miniature clutter plates to further reduce sidelobes toward road surface. The resultant composite antenna has achieved sidelobe levels of -45 dB, with a 20 dB improvement from standard patch arrays, at elevation angles toward 90deg.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"11 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134132045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
2-Dimensional Spatio-Temporal Signal Processing for Dispersion Compensation in Optical Systems 光学系统中色散补偿的二维时空信号处理
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380542
A. Tarighat, B. Jalali
{"title":"2-Dimensional Spatio-Temporal Signal Processing for Dispersion Compensation in Optical Systems","authors":"A. Tarighat, B. Jalali","doi":"10.1109/MWSYM.2007.380542","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380542","url":null,"abstract":"An inherent limitation of dispersive optical systems is the frequency-selective response of the optical systems. This paper presents a solution based on spatio-temporal digital processing that exploits the optical phase diversity to create a flat frequency response in optical systems. The digital signal processing algorithm creates a flat frequency response even when the system's transfer function includes deep nulls in the frequency response. The proposed scheme can be applied to both baseband and passband systems as well any optical signal processing system that suffers from dispersion. As an example, we present a two-branch optical system with two MZ modulators. We show that while the flat bandwidth of the original system is very limited, the proposed solution increases the overall achievable SNR to 52 dB at frequencies up to 20 GHz.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134344892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Compact Ultra-Wideband Bandpass Filter Using a Microstrip Stepped-Impedance Four-Modes Resonator 采用微带阶跃阻抗四模谐振器的新型紧凑型超宽带带通滤波器
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380048
Peng Cai, Zhewang Ma, X. Guan, Y. Kobayashi, T. Anada, G. Hagiwara
{"title":"A Novel Compact Ultra-Wideband Bandpass Filter Using a Microstrip Stepped-Impedance Four-Modes Resonator","authors":"Peng Cai, Zhewang Ma, X. Guan, Y. Kobayashi, T. Anada, G. Hagiwara","doi":"10.1109/MWSYM.2007.380048","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380048","url":null,"abstract":"A novel compact ultra-wideband (UWB) bandpass filter (BPF) using a microstrip stepped-impedance four-modes resonator is developed in this paper. By controlling the resonant frequencies of the first four modes of the resonator, we get four transmission poles within the passband of the filter. Moreover, by enhancing the coupling between the resonator and the input/output feed lines, we obtain two additional transmission poles. As a consequence, we realize a UWB bandpass filter that has six transmission poles in its passband, although only one resonator is utilized. A design method, based on network analysis and optimization in the z-domain, is established to determine the circuit and geometrical parameters of the filter. The measured filtering characteristics of the filter show good agreement with the theoretical predictions and satisfy well the Federal Communications Commission's indoor limit.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131635647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 72
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