Y. Inoue, S. Masuda, M. Kanamura, T. Ohki, K. Makiyama, N. Okamoto, K. Imanishi, T. Kikkawa, N. Hara, H. Shigematsu, K. Joshin
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Degradation-Mode Analysis for Highly Reliable GaN-HEMT
We analyzed the degradation mode of GaN-HEMTs. We observed the sudden degradation to make serious influence on the reliability. In this paper, we proposed a new approach to eliminate sudden-degradation devices. By measuring the gate leakage current before stress test, we can predict the sudden degradation. We also discussed the gate leakage current factor, for example, the surface hexagonal pits. Using this eliminating method, we could select the reliable devices with a life of over 1 times 106 hours at high-temperature of 200degC.
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