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20 W 900 MHz Doherty Power Amplifier 20 W 900 MHz多尔蒂功率放大器
2022 International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2022-10-20 DOI: 10.1109/EExPolytech56308.2022.9950977
Victoria Seldyukova, Evgenii V. Balashov
{"title":"20 W 900 MHz Doherty Power Amplifier","authors":"Victoria Seldyukova, Evgenii V. Balashov","doi":"10.1109/EExPolytech56308.2022.9950977","DOIUrl":"https://doi.org/10.1109/EExPolytech56308.2022.9950977","url":null,"abstract":"This article is devoted to the design of linear high efficiency Doherty power amplifier for LTE at the frequency of 900 MHz. The Doherty power amplifier with the output power 45 dBm at the frequency of 900MHz is based on the transistor MW6S010n. The gain of the power amplifier is 14.8 dB, the full-power efficiency is 60% and 6-dB output power backoff efficiency is 35%. The bandwidth of this power amplifier is 1 GHz. The result is approved by simulation using EDA Advanced Design System (ADS).","PeriodicalId":204076,"journal":{"name":"2022 International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133291036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Approaches to Digital Filtering of Ultra-high Resolution Electrocardiosignals 超高分辨率心电信号的数字滤波方法
2022 International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2022-10-20 DOI: 10.1109/EExPolytech56308.2022.9950905
K. Zaichenko, Arseniy Afanasenko, A. Kordyukova, Elena Denisova, E. Logachev, Daniil Sevakov
{"title":"Approaches to Digital Filtering of Ultra-high Resolution Electrocardiosignals","authors":"K. Zaichenko, Arseniy Afanasenko, A. Kordyukova, Elena Denisova, E. Logachev, Daniil Sevakov","doi":"10.1109/EExPolytech56308.2022.9950905","DOIUrl":"https://doi.org/10.1109/EExPolytech56308.2022.9950905","url":null,"abstract":"The necessity of developing an algorithm for filtering ultra-high resolution electrocardiosignals (UHR ECS) is substantiated. The advantages and disadvantages of existing filtration methods used for processing electrocardiograms are analyzed, and the most appropriate application for ultra-high resolution electrocardiography (ECG SVR) is proposed. The proposed algorithm has been tested to reduce the level of exposure to various types of interference associated with the AC network, motion artifacts of the studied living object, as well as muscle contractions. This will also allow stabilization of the baseline (isoline) of the electrocardiosignal. The paper evaluates the effectiveness of the presented algorithm by parameters such as signal informativeness (I), peak signal-to-noise ratio (PNSR) and signal-to-noise ratio (SIR) using various spectral analysis techniques.","PeriodicalId":204076,"journal":{"name":"2022 International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131537352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Envelope Distortion in EER Power Amplifier under VSWR Variation 驻波比变化下EER功率放大器的包络失真
2022 International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2022-10-20 DOI: 10.1109/EExPolytech56308.2022.9950989
V. Sorotsky, R. Zudov, Aleksey O. Pergushev, A. Ulanov, Nikolay V. Kulikov
{"title":"Envelope Distortion in EER Power Amplifier under VSWR Variation","authors":"V. Sorotsky, R. Zudov, Aleksey O. Pergushev, A. Ulanov, Nikolay V. Kulikov","doi":"10.1109/EExPolytech56308.2022.9950989","DOIUrl":"https://doi.org/10.1109/EExPolytech56308.2022.9950989","url":null,"abstract":"Envelope elimination and restoration technique transmitters can amplify signals with a high peak-to-average power ratio while achieving an efficiency of 90% or more. However, there are many factors that can distort the signal. This article shows that one of these factors is the untuned load of the RF power amplifier, which causes distortion of the envelope voltage at the output of the modulation power supply. Using the example of an OFDM signal with QAM-16, it has been demonstrated that the BER performance can deteriorate by one or two orders.","PeriodicalId":204076,"journal":{"name":"2022 International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134123772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of the Applicability of the Picoampere Current Measurement Method Based on an Integrated Amplifier for Recording Ion Current Values 基于集成放大器的皮安电流测量方法记录离子电流值的适用性分析
2022 International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2022-10-20 DOI: 10.1109/EExPolytech56308.2022.9950950
Olesya Mikhailova, Daria Klimenko, Daria Vakorina, Elena Denisova, Dmitriy Petrov, I. Antifeev
{"title":"Analysis of the Applicability of the Picoampere Current Measurement Method Based on an Integrated Amplifier for Recording Ion Current Values","authors":"Olesya Mikhailova, Daria Klimenko, Daria Vakorina, Elena Denisova, Dmitriy Petrov, I. Antifeev","doi":"10.1109/EExPolytech56308.2022.9950950","DOIUrl":"https://doi.org/10.1109/EExPolytech56308.2022.9950950","url":null,"abstract":"The necessity of measuring various parameters in micro and nano channels and pores in microfluidic chips is substantiated. A method for measuring the picoampere current based on an integrated amplifier for recording the values of the ion current is proposed. The design of the measuring device has been developed. Based on the results obtained, the possibility of adapting the proposed method and the developed device for measuring small currents in micro and nano channels of a microfluidic chip is analyzed. The comparison of the data obtained, as well as the analysis of previous results, allowed us to determine the conditions under which it is possible to measure small currents in pores and microchannels with a diameter from 10 nm to 1 micron.","PeriodicalId":204076,"journal":{"name":"2022 International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131898921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RLC Low-Pass Filter with Controlled Parameters 参数可控的RLC低通滤波器
2022 International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2022-10-20 DOI: 10.1109/EExPolytech56308.2022.9950852
D. Denisenko, A. Bugakova, N. Prokopenko, V. Chumakov
{"title":"RLC Low-Pass Filter with Controlled Parameters","authors":"D. Denisenko, A. Bugakova, N. Prokopenko, V. Chumakov","doi":"10.1109/EExPolytech56308.2022.9950852","DOIUrl":"https://doi.org/10.1109/EExPolytech56308.2022.9950852","url":null,"abstract":"The article discusses the architecture of the RLC low-pass filter (RLCLPF), which implements independent tuning by different resistors of the quality factor and the frequency of the pole at constant values of the capacitance of the frequency-setting capacitor and the value of the frequency-setting inductance. The results of the RLCLPF simulation in the Micro-Cap environment are discussed, which confirm its properties. The basic mathematical expressions for the RLCLPF transfer function and parameters of its amplitude and phase responses are obtained. The proposed RLCLPF circuit design is recommended for adaptive filtering of signals in radio engineering and measuring systems. Due to the appropriate selection of the parameters of active and passive elements, it is possible to ensure the operation of the considered RLCLPF both at low and at high frequencies.","PeriodicalId":204076,"journal":{"name":"2022 International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133750901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Luminescent Properties of Nanocomposites Based on Porous Silicon, Nickel, and Nickel Oxide in the Photon Energy Range of 1.4 - 2.9 eV 多孔硅、镍和氧化镍纳米复合材料在光子能量1.4 ~ 2.9 eV范围内的发光性能
2022 International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2022-10-20 DOI: 10.1109/EExPolytech56308.2022.9950797
N. Galkin, D. T. Yan, K. Galkin, A. Nepomnyaschiy, D. Goroshko
{"title":"Luminescent Properties of Nanocomposites Based on Porous Silicon, Nickel, and Nickel Oxide in the Photon Energy Range of 1.4 - 2.9 eV","authors":"N. Galkin, D. T. Yan, K. Galkin, A. Nepomnyaschiy, D. Goroshko","doi":"10.1109/EExPolytech56308.2022.9950797","DOIUrl":"https://doi.org/10.1109/EExPolytech56308.2022.9950797","url":null,"abstract":"This paper presents the results of studying the effect of time (5, 6, 7, and 8 minutes) of nickel electrodeposition (Ni ED) at room temperature and annealing at 450°C in an argon atmosphere on the structure, composition, and photoluminescent (PL) properties of mesoporous silicon (meso-PS) and its nanocomposite with Ni (meso-PS/Ni). The SEM and EDX spectroscopy data showed the predominant concentration of Ni on the surface and an insignificant concentration in the near-surface region of the meso-PS. According to Raman and PL spectroscopy data, it was established that after Ni ED in a NiCl2 solution, nickel sub oxide (NiOx) with a band gap of up to 2.8 e V is formed in the meso-PS surface layer, which, after short-term annealing (5 and 6 min), is transformed into nickel monoxide nanocrystals (NiO), which leads to a strong (0.2 - 0.9 eV) “blue” shift of the PL maximum (2.4-2.6 eV) of the nanocomposite with meso-PS/Ni with a multiple increase in the PL amplitude. With an increase in the time of Ni ED and storage in air, NiOx, is not formed, and the detected significant (2–18 times) increase in the PL amplitude with a small “red” shift of 0.05-0.1 eV is presumably associated with the formation of radiative recombination centers in the form of ions Ni in the meso-PS matrix. Annealing in argon in this case leads to a decrease in the PL intensity without shifting the PL maxima.","PeriodicalId":204076,"journal":{"name":"2022 International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133781023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Features of Metal Dielectric Structures Based on GaP with Avalanche Multiplication Effect 基于雪崩倍增效应GaP的金属介电结构特性研究
2022 International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2022-10-20 DOI: 10.1109/EExPolytech56308.2022.9950796
V. Rud, D. Melebaev, I. Trapeznikova, M. Diuldin, M. Yakusheva, N. Bykova
{"title":"Features of Metal Dielectric Structures Based on GaP with Avalanche Multiplication Effect","authors":"V. Rud, D. Melebaev, I. Trapeznikova, M. Diuldin, M. Yakusheva, N. Bykova","doi":"10.1109/EExPolytech56308.2022.9950796","DOIUrl":"https://doi.org/10.1109/EExPolytech56308.2022.9950796","url":null,"abstract":"In the field of Schottky barrier physics, metal- semiconductor, metal-dielectric-semiconductor nanotechnology, in particular nanostructuring, are used to create highly efficient photodetectors of visible and ultraviolet radiation. In photosensitive MDS nanostructures in the UV range at hv>5.l eV, a giant photosensitivity was detected, which is associated with avalanche multiplication in the bulk charge layer and the properties of the metal nanolayers Au and the wide-band oxide Ga2O3 (Fe). It is important to emphasize that the gold nanolayer applied to the surface of the oxide layer, under the influence of the internal electric field of the bulk charge, can acquire new properties, which makes it possible to create a new type of optoelectronic devices based on GAP MDS nanostructures, which can be widely used.","PeriodicalId":204076,"journal":{"name":"2022 International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114289577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Smartphone-Based Interrogated Pulse Wave Sensor with Intensity Readout 基于智能手机的询问脉冲波传感器与强度读出
2022 International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2022-10-20 DOI: 10.1109/EExPolytech56308.2022.9950899
Sergei Tataurtshikov, A. Markvart, L. Liokumovich, N. Ushakov
{"title":"Smartphone-Based Interrogated Pulse Wave Sensor with Intensity Readout","authors":"Sergei Tataurtshikov, A. Markvart, L. Liokumovich, N. Ushakov","doi":"10.1109/EExPolytech56308.2022.9950899","DOIUrl":"https://doi.org/10.1109/EExPolytech56308.2022.9950899","url":null,"abstract":"Pulse wave measurement is a method of biomedical diagnostics, allowing to predict many health problems. It is however vital for the healthcare system to bring this technology to mass-market while ensuring high measurement accuracy. Therefore, the development of novel cost-effective pulse wave sensors with increased accuracy and reduced susceptibility to motion artifacts is of great importance. This work reports on a pulse wave optical fiber sensor, interrogated by a smartphone. The sensor performance was tested in terms of signal to noise ratio, repeatability of demodulated signal and suitability of demodulated signals for extraction of information about direct and reflected waves.","PeriodicalId":204076,"journal":{"name":"2022 International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115441456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Dewetting Conditions on the Optical Parameters of the AuNP / GaN Nanostructure 脱湿条件对AuNP / GaN纳米结构光学参数的影响
2022 International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2022-10-20 DOI: 10.1109/EExPolytech56308.2022.9950886
Y. Enns, V. Studzinsky, Aleksandr Uvarov, E. Nikitina, A. Speshilova, P. Karaseov
{"title":"Influence of Dewetting Conditions on the Optical Parameters of the AuNP / GaN Nanostructure","authors":"Y. Enns, V. Studzinsky, Aleksandr Uvarov, E. Nikitina, A. Speshilova, P. Karaseov","doi":"10.1109/EExPolytech56308.2022.9950886","DOIUrl":"https://doi.org/10.1109/EExPolytech56308.2022.9950886","url":null,"abstract":"This paper presents the results of investigation of gold nanoparticle array formation on GaN surface and its plasmon effect. Gold nanoparticles are formed on GaN layer grown by molecular beam epitaxy (MBE) by solid-state dewetting technique both in the air at atmospheric pressure and under vacuum conditions. The influence of the thickness of as-deposited gold film and annealing ambient on the size and spatial distribution of nanoparticles was studied. Investigation of optical characteristics showed the appearance of the surface plasmon resonance effect. The results reveal the possibility to increase the efficiency of GaN-based optoelectronic devices by Au nanoparticle arrays.","PeriodicalId":204076,"journal":{"name":"2022 International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116027382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Effect of Temperature on the Pulsed Electrical Strength of Polyethylene Terephthalate Films 温度对聚对苯二甲酸乙二醇酯薄膜脉冲电强度的影响
2022 International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2022-10-20 DOI: 10.1109/EExPolytech56308.2022.9950943
Sergey E. Semenov, N. Sudar
{"title":"The Effect of Temperature on the Pulsed Electrical Strength of Polyethylene Terephthalate Films","authors":"Sergey E. Semenov, N. Sudar","doi":"10.1109/EExPolytech56308.2022.9950943","DOIUrl":"https://doi.org/10.1109/EExPolytech56308.2022.9950943","url":null,"abstract":"The effect of temperature on the impulse electrical strength of a polyethylene terephthalate (PET) film with a thickness of $2.5 mumathrm{m}$ was studied. Statistical analysis of the obtained results was carried out. It was found that the probability distribution of the breakdown strength of the film under study corresponds to the Weibull law. It was shown that the value of the most probable breakdown voltage of a PET film in the range from 293 to 363 K does not depend on temperature.","PeriodicalId":204076,"journal":{"name":"2022 International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122078069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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