{"title":"20 W 900 MHz Doherty Power Amplifier","authors":"Victoria Seldyukova, Evgenii V. Balashov","doi":"10.1109/EExPolytech56308.2022.9950977","DOIUrl":null,"url":null,"abstract":"This article is devoted to the design of linear high efficiency Doherty power amplifier for LTE at the frequency of 900 MHz. The Doherty power amplifier with the output power 45 dBm at the frequency of 900MHz is based on the transistor MW6S010n. The gain of the power amplifier is 14.8 dB, the full-power efficiency is 60% and 6-dB output power backoff efficiency is 35%. The bandwidth of this power amplifier is 1 GHz. The result is approved by simulation using EDA Advanced Design System (ADS).","PeriodicalId":204076,"journal":{"name":"2022 International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on Electrical Engineering and Photonics (EExPolytech)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EExPolytech56308.2022.9950977","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This article is devoted to the design of linear high efficiency Doherty power amplifier for LTE at the frequency of 900 MHz. The Doherty power amplifier with the output power 45 dBm at the frequency of 900MHz is based on the transistor MW6S010n. The gain of the power amplifier is 14.8 dB, the full-power efficiency is 60% and 6-dB output power backoff efficiency is 35%. The bandwidth of this power amplifier is 1 GHz. The result is approved by simulation using EDA Advanced Design System (ADS).