Features of Metal Dielectric Structures Based on GaP with Avalanche Multiplication Effect

In the field of Schottky barrier physics, metal- semiconductor, metal-dielectric-semiconductor nanotechnology, in particular nanostructuring, are used to create highly efficient photodetectors of visible and ultraviolet radiation. In photosensitive MDS nanostructures in the UV range at hv>5.l eV, a giant photosensitivity was detected, which is associated with avalanche multiplication in the bulk charge layer and the properties of the metal nanolayers Au and the wide-band oxide Ga2O3 (Fe). It is important to emphasize that the gold nanolayer applied to the surface of the oxide layer, under the influence of the internal electric field of the bulk charge, can acquire new properties, which makes it possible to create a new type of optoelectronic devices based on GAP MDS nanostructures, which can be widely used.