Physica E-low-dimensional Systems & Nanostructures最新文献

{"title":"Impact of magnetic field on photocurrent: A classical electrodynamic study, simulation, and experimental validation","authors":"Mohammed Khalis ,&nbsp;Abdennabi Morchid ,&nbsp;Rachid Masrour","doi":"10.1016/j.physe.2025.116390","DOIUrl":"10.1016/j.physe.2025.116390","url":null,"abstract":"<div><div>In this work, we conducted a study aimed at analyzing the impact of uniform electric and magnetic fields on the behavior of charge carriers in a solar cell, with particular focus on the evolution of the photocurrent. Relying on the classical laws of electrodynamics, formulated within a covariant framework, we established the fundamental relationship between the electric field <span><math><mrow><mover><mi>E</mi><mo>→</mo></mover></mrow></math></span> and the magnetic field <span><math><mrow><mover><mi>B</mi><mo>→</mo></mover></mrow></math></span> through the Lorentz force, without initially accounting for collisional interactions. The equations of motion of electrons and holes—describing in particular the cycloidal trajectories of carriers and the drift velocity resulting from the combined action of the two fields—constitute the theoretical basis of our analysis. The application of this formalism to the operation of a solar cell subjected to a perpendicular magnetic field reveals distinct behaviors depending on the region considered. In the depletion region, where the internal electric field is strong, the influence of the magnetic field is significant and markedly alters carrier trajectories. In contrast, in the neutral regions dominated by diffusive transport, its effect remains negligible. The results confirm that increasing the magnetic field intensity leads to a substantial reduction in the photocurrent. For instance, in a silicon solar cell with a surface area of 100 cm² under <span><math><mrow><mn>1000</mn><mspace></mspace><mi>W</mi><mo>.</mo><msup><mi>m</mi><mrow><mo>−</mo><mn>2</mn></mrow></msup></mrow></math></span> illumination at 25 °C, MATLAB simulations indicate a decrease in photocurrent from 3.6 A to 2.6 A as the magnetic field increases from 0 to 50 mT. Experimentally, the study of a photovoltaic module with a surface area of 270 cm² under <span><math><mrow><mn>600</mn><mspace></mspace><mi>W</mi><mo>.</mo><msup><mi>m</mi><mrow><mo>−</mo><mn>2</mn></mrow></msup></mrow></math></span> illumination shows a reduction in photocurrent from 205 to 90 mA, accompanied by an increase in series resistance from 7.76 to 17.70 Ω, under the same magnetic field variation. When the effect of collisional forces is subsequently incorporated into the modeling, the influence of the magnetic field on both series resistance and photocurrent reduction becomes even more pronounced. These findings highlight an excellent agreement between the modeling—which simultaneously accounts for electrical, magnetic, and collisional contributions—and the experimental observations, thereby validating the relevance of the proposed model and its ability to faithfully describe the behavior of solar cells in the presence of a magnetic field.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"175 ","pages":"Article 116390"},"PeriodicalIF":2.9,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145363310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nonlinear corrections to the thermoelectric efficiency of a nanoscale device","authors":"Raymond J. Hartig ,&nbsp;Ioan Grosu ,&nbsp;Ionel Ţifrea","doi":"10.1016/j.physe.2025.116383","DOIUrl":"10.1016/j.physe.2025.116383","url":null,"abstract":"&lt;div&gt;&lt;div&gt;We investigate the nonlinear thermoelectric transport in a generic nanoscale device connected to two side reservoirs at different temperatures (&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;T&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;L&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;T&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;R&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;) and chemical potentials (&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;μ&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;L&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;μ&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;R&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;). We derive equations for the charge (electric) and heat (thermal) currents. These equations allow for the estimation of the second order contributions to the system’s thermoelectric response and the &lt;em&gt;analytical&lt;/em&gt; derivation of the first nonlinear contributions to the system’s electric conductance &lt;span&gt;&lt;math&gt;&lt;msup&gt;&lt;mrow&gt;&lt;mi&gt;σ&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mrow&gt;&lt;mo&gt;(&lt;/mo&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;mo&gt;)&lt;/mo&gt;&lt;/mrow&gt;&lt;/mrow&gt;&lt;/msup&gt;&lt;/math&gt;&lt;/span&gt;, Seebeck coefficient &lt;span&gt;&lt;math&gt;&lt;msup&gt;&lt;mrow&gt;&lt;mi&gt;S&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mrow&gt;&lt;mo&gt;(&lt;/mo&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;mo&gt;)&lt;/mo&gt;&lt;/mrow&gt;&lt;/mrow&gt;&lt;/msup&gt;&lt;/math&gt;&lt;/span&gt;, and electronic thermal conductance &lt;span&gt;&lt;math&gt;&lt;msubsup&gt;&lt;mrow&gt;&lt;mi&gt;κ&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;e&lt;/mi&gt;&lt;mi&gt;l&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mrow&gt;&lt;mo&gt;(&lt;/mo&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;mo&gt;)&lt;/mo&gt;&lt;/mrow&gt;&lt;/mrow&gt;&lt;/msubsup&gt;&lt;/math&gt;&lt;/span&gt;. In the generation mode, when the system’s output power is positive (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;P&lt;/mi&gt;&lt;mo&gt;&gt;&lt;/mo&gt;&lt;mn&gt;0&lt;/mn&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;), we estimate the maximum output power and efficiency of the system. The results are general and rely on generic dimensionless kinetic transport coefficients &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;msubsup&gt;&lt;mrow&gt;&lt;mi&gt;K&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;n&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;p&lt;/mi&gt;&lt;/mrow&gt;&lt;/msubsup&gt;&lt;mrow&gt;&lt;mo&gt;(&lt;/mo&gt;&lt;mi&gt;μ&lt;/mi&gt;&lt;mo&gt;,&lt;/mo&gt;&lt;mi&gt;T&lt;/mi&gt;&lt;mo&gt;)&lt;/mo&gt;&lt;/mrow&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; that depends on the system’s characteristic electronic transmission function &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;τ&lt;/mi&gt;&lt;mrow&gt;&lt;mo&gt;(&lt;/mo&gt;&lt;mi&gt;E&lt;/mi&gt;&lt;mo&gt;)&lt;/mo&gt;&lt;/mrow&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;. To outline the differences between the linear and nonlinear approximations we consider the particular case of a generalized Fano line-shape electronic transmission function and exactly calculate the dimensionless kinetic transport coefficients in terms of Hurwitz zeta functions and Bernoulli numbers. The output power efficiency of the system is estimated as function of the energy &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;ɛ&lt;/mi&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;mrow&gt;&lt;mo&gt;(&lt;/mo&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;E&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;d&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;mo&gt;−&lt;/mo&gt;&lt;mi&gt;μ&lt;/mi&gt;&lt;mo&gt;)&lt;/mo&gt;&lt;/mrow&gt;&lt;mo&gt;/&lt;/mo&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;k&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;B&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;mi&gt;T&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; and broadening &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;γ&lt;/mi&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;Γ&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;d&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;mo&gt;/&lt;/mo&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;k&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;B&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;mi&gt;T&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; parameters. These results support the need for higher order terms in the theoretical analysis of the thermoelectric transport in nanoscale devices and allow for the optimization of the system’s propert","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"175 ","pages":"Article 116383"},"PeriodicalIF":2.9,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145267668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Doping-driven physical properties and electronic transition in 2D transition metal dichalcogenides Mo1-XAXS2 (A= [Nb, V], X = 0.25, 0.50, 0.75, 1.00): A First principle study","authors":"Magaji Ismail ,&nbsp;Shuaibu Alhassan ,&nbsp;Aliyu Kabiru Isiyaku ,&nbsp;Sadik Garba Abdu ,&nbsp;Shehu Aminu yamusa","doi":"10.1016/j.physe.2025.116373","DOIUrl":"10.1016/j.physe.2025.116373","url":null,"abstract":"<div><div>First principle density functional theory was employed to investigate the physical properties and electronic transition of doped two-dimensional molybdenum disulphide (MoS₂) with transition metal niobium (Nb) and vanadium (V) at varying doping concentration. The objective was to study how controlled doping affects the physical characteristics of doped MoS₂for potential photodetection application. The obtained result reveal that Nb doping leads to progressive lattice expansion and rapid transition from semiconducting to metallic behavior which is attributed larger atomic radius and fewer valence electrons as compared to Mo. While V doping results in slight contraction of the lattice and a more gradual narrowing of the energy gap and retained it semiconducting nature at low and moderate doping concentration. The elastic properties result shows that Nb doping softens the material significantly than V doped which is due to weakened M − S bonding. The Band structure and total density of states analysis confirm the introduction of impurity levels and p-type character in Nb-doped systems, whereas V-doped systems show hybridization near the Fermi level with localized to semi-metallic transitions. These findings demonstrate that V doping offers a more stable and tunable route for enhancing the optoelectronic performance of MoS₂, making it promising candidate for broadband photodetector.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"175 ","pages":"Article 116373"},"PeriodicalIF":2.9,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145097116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature-dependent photoluminescence from nanostructured silicon: role of quantum-confined Bloch states and interfacial defects","authors":"Shayari Basu ,&nbsp;Ujjwal Ghanta ,&nbsp;Saddam Khan ,&nbsp;Manotosh Pramanik ,&nbsp;Rajalingam Thangavel ,&nbsp;Bipul pal ,&nbsp;Syed Minhaz Hossain","doi":"10.1016/j.physe.2025.116380","DOIUrl":"10.1016/j.physe.2025.116380","url":null,"abstract":"<div><div>The strong visible photoluminescence (PL) in surface-oxidized nanostructured silicon emerges from the interplay between intrinsic Bloch states and oxide-related interfacial defects, making it difficult to isolate their role. Temperature-dependent <span><math><mrow><mo>(</mo><mrow><mn>5</mn><mo>−</mo><mn>350</mn><mspace></mspace><mi>K</mi></mrow><mo>)</mo></mrow></math></span> PL measurements on nanostructured silicon with varying crystallite sizes manifest three distinct decay mechanisms involving band-to-band, band-to-trap and trap-to-trap transitions to multiple emission bands appearing in the convoluted broad PL spectrum. At lower temperatures <span><math><mfenced><mrow><mo>≲</mo><mn>225</mn><mspace></mspace><mi>K</mi></mrow></mfenced></math></span>, PL peak energy associated with the quantum-confined Bloch states exhibits a nearly linear blue shift, governed by a strong inverse power law dependence of the temperature coefficient on the effective crystallite size, while this trend reverses at higher temperatures. Conversely, the defect-related peak energies increase monotonically at a nearly constant rate throughout the experimental temperature range. A general analytical model for finite systems with a separable pseudo-potential effectively estimates the contributions from different decay channels to the PL emission. Theoretical results align well with the experimentally obtained values of the power-law exponents, offering a novel way to distinguish between the radiative recombination channels involving quantum-confined Bloch states and interfacial defects/trap states in nanostructured silicon.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"175 ","pages":"Article 116380"},"PeriodicalIF":2.9,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145220921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hybridization of cobalt ferrites nanoparticles with multiwall carbon nanotubes and reduced graphene oxide nanosheets: A path to explore new materials for supercapacitors’ electrode","authors":"M. Mumtaz ,&nbsp;M. Shahroz ,&nbsp;Mubasher ,&nbsp;M. Shahid Khan ,&nbsp;Mehwish Hassan ,&nbsp;Zubair Ahmad ,&nbsp;M. Usman ,&nbsp;Danish Rashid ,&nbsp;Hassan Tariq","doi":"10.1016/j.physe.2025.116394","DOIUrl":"10.1016/j.physe.2025.116394","url":null,"abstract":"<div><div>Nanohybrids play an important role in a continuum of energy storage devices and among them cobalt ferrite (CoFe₂O₄) nanoparticles with multi-walled carbon nanotubes (MWCNTs) and reduced graphene oxide (rGO) nanosheets nanohybrid stands out as versatile nanomaterials due to their high performance for supercapacitor's electrodes. In this study, pure CoFe₂O₄ nanoparticles and their nanohybrids are successfully synthesized by one-pot hydrothermal method with subsequent ultra-sonication. The structural and morphological characterizations are carried out by X-ray diffraction and scanning electron microscopy. The electrochemical performances are investigated by cyclic voltammetry, galvanostatic charging/discharging, and electrochemical impedance spectroscopy in 1 M NaOH aqueous electrolyte. CoFe₂O₄/MWCNTs/rGO nanohybrids exhibited good electrochemical properties with high specific capacitance (592 F/g). More importantly, the specific capacitance of CoFe₂O₄/MWCNTs/rGO nanohybrid asymmetric supercapacitor device retained 89.7 % of initial capacitance after 100 cycles at scan-rate of 100 mV/s. The results suggest that the synthesized CoFe₂O₄/MWCNTs/rGO nanohybrids are promising candidate for supercapacitors electrodes. Moreover, the use of inexpensive carbon materials (rGO, MWCNTs) with transition metal oxides like CoFe₂O₄ provides a novel cost-effective tri-nanohybrid [CoFe₂O₄/MWCNTs/rGO] for commercial energy storage devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"175 ","pages":"Article 116394"},"PeriodicalIF":2.9,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145416877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stability, elastic and electronic properties of new stable GaP and InP monolayers in biphenylene network: A first-principles investigation","authors":"Gang Liu,&nbsp;Shengqi Chi,&nbsp;Fengli Cao,&nbsp;Xiaodong Qiu","doi":"10.1016/j.physe.2025.116374","DOIUrl":"10.1016/j.physe.2025.116374","url":null,"abstract":"<div><div>Based on first-principles calculations, this work predicts two novel inorganic monolayers in biphenylene network: buckled GaP and InP monolayers. The energetic, mechanical, dynamical, and thermal stabilities were confirmed via DFT and AIMD calculations. The calculated in-plane Young's modulus and Poisson's ratio of GaP are 33.4 (15.7) N/m and 0.0 (0.0), while those of InP are 25.3 (11.5) N/m and 0.2 (0.1), showing the anisotropic mechanical property. It is noted GaP monolayer is a zero Poisson's ratio material. The GaP and InP monolayers are found to be indirect and direct semiconductors, with the band gap of 2.46 and 2.40 eV at HSE06 level. And the high electron mobilities of InP monolayer (exceed <span><math><mrow><msup><mn>10</mn><mn>3</mn></msup><mspace></mspace><mi>c</mi><msup><mi>m</mi><mn>2</mn></msup><msup><mi>V</mi><mrow><mo>−</mo><mn>1</mn></mrow></msup><msup><mi>s</mi><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></math></span>) are found, offering promising potential for the development of electronic and photoelectronic nanodevices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"175 ","pages":"Article 116374"},"PeriodicalIF":2.9,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145097120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Size and dielectric-dependent plasmonic resonances in CdS@Ag core–shell quantum dots: Field enhancement, dispersion, and slow-light effects","authors":"Shewa Getachew Mamo","doi":"10.1016/j.physe.2025.116371","DOIUrl":"10.1016/j.physe.2025.116371","url":null,"abstract":"<div><div>This study presents a comprehensive theoretical and numerical investigation of size- and host-medium dielectric-dependent plasmonic resonances in CdS@Ag core–shell quantum dots, with particular emphasis on field enhancement, optical dispersion, and slow-light effects. A hybrid framework combining the Maxwell–Garnett effective medium theory with a size-corrected electrostatic model was employed to compute the effective dielectric response and group velocity characteristics. The results reveal that local field enhancement is maximized by thicker Ag shells and low-permittivity hosts, enabling strong amplification of near-field intensities. Dual plasmon resonances, arising from the CdS/Ag and Ag/host interfaces, govern the field enhancement factor, refractive index and absorption spectra, producing tunable resonance shifts with variations in core radius, shell thickness, and host permittivity. Near these resonances, pronounced dispersion leads to a substantial increase in the group index, with group velocity reduced by more than an order of magnitude and, in certain regimes, reversed to negative values. Enhanced slow-light effects are particularly evident in high-permittivity hosts such as ZnO, where plasmon–exciton coupling further intensifies dispersion and suppresses pulse propagation. These findings provide new insights into the structural and dielectric control of plasmonic quantum dots and establish design guidelines for their application in optical delay lines, photonic modulators, sensors, and nonlinear optical devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"175 ","pages":"Article 116371"},"PeriodicalIF":2.9,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145097119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hyperbolic plasmon dispersion and optical conductivity of holey graphene: Signatures of flat-bands","authors":"Abdiel de Jesús Espinosa-Champo ,&nbsp;Gerardo G. Naumis","doi":"10.1016/j.physe.2025.116402","DOIUrl":"10.1016/j.physe.2025.116402","url":null,"abstract":"<div><div>In this work, we investigate the tunable plasmonic modes and optical conductivity of holey graphene (HG) by varying the radius and periodicity of its perforations. We establish that the breaking of graphene’s bipartite sublattice symmetry is the key physical mechanism, which simultaneously induces electronic flat bands and a strong optical anisotropy. The former gives rise to nearly flat plasmonic bands, while the latter enables the propagation of hyperbolic plasmons. These findings position holey graphene as a promising platform for nanophotonics, offering directional control of light at the nanoscale without the need for complex heterostructures.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"176 ","pages":"Article 116402"},"PeriodicalIF":2.9,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145425868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced triethylamine gas sensing performance based on p-CoSn(OH)6/n-ZnO heterojunction composites","authors":"Weiwei Guo ,&nbsp;Yatao Shang ,&nbsp;Xinran Li ,&nbsp;Hejing Zhang","doi":"10.1016/j.physe.2025.116418","DOIUrl":"10.1016/j.physe.2025.116418","url":null,"abstract":"<div><div>In this study, we synthesized CoSn(OH)₆, ZnO, and ZnO@CoSn(OH)₆ composites for gas sensing applications using a straightforward hydrothermal method. Notably, the 5-ZnO@CoSn(OH)₆ sensor exhibited superior gas sensing performance for triethylamine compared to CoSn(OH)₆ and ZnO alone. The 5-ZnO@CoSn(OH)₆ sensor demonstrated a high gas response of 114.615 to 30 ppm triethylamine at 190 °C. Additionally, it achieved the lowest limit of detection (LOD) at 0.0294 ppm, along with excellent stability and reproducibility. The outstanding gas sensing properties of the 5-ZnO@CoSn(OH)₆ sensor can be attributed to its large BET surface area, enhanced electron-hole separation efficiency, sufficient carrier content, and the formation of p-n heterojunctions. Thus, coupling ZnO with CoSn(OH)₆ to form the ZnO@CoSn(OH)₆ composite is an effective strategy to enhance the gas sensing performance of CoSn(OH)₆ sensors for triethylamine detection.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"176 ","pages":"Article 116418"},"PeriodicalIF":2.9,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145569533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electronic structure and transport in materials with flat bands: 2D materials and quasicrystals","authors":"Guy Trambly de Laissardière ,&nbsp;Somepalli Venkateswarlu ,&nbsp;Ahmed Misssaoui ,&nbsp;Ghassen Jemaï ,&nbsp;Khouloud Chika ,&nbsp;Javad Vahedi ,&nbsp;Omid Faizy Namarvar ,&nbsp;Jean-Pierre Julien ,&nbsp;Andreas Honecker ,&nbsp;Laurence Magaud ,&nbsp;Jouda Jemaa Khabthani ,&nbsp;Didier Mayou","doi":"10.1016/j.physe.2025.116362","DOIUrl":"10.1016/j.physe.2025.116362","url":null,"abstract":"<div><div>In this review, we present recent works on materials whose common point is the presence of electronic bands of very low dispersion, called “flat bands”, which are due to specific atomic order effects without electron interactions. These states are always indicative of some form of confinement and have significant consequences on the electronic structure, transport properties and magnetism of these materials. A first part is devoted to the cases where this confinement is due to the long-range geometry of the defect-free structure. We have thus studied periodic approximant structures of quasiperiodic Penrose and octagonal tilings, and twisted bilayers of graphene or transition metal dichalcogenides (TMDs) whose rotation angle between the two layers assumes a special value, called “magic angle”. In these materials, the flat bands correspond to electronic states distributed over a very large number of atoms (several hundreds or even thousands of atoms) and are very sensitive to small structural distortions such as “heterostrain”. We have shown that their electronic transport properties cannot be described by usual Bloch–Boltzmann theories, because the interband terms of the velocity operator dominate the intraband terms as far as quantum diffusion is concerned. In the case of twisted bilayer graphene, flat bands can induce a magnetic state and other electron–electron correlation effects. The second part focuses on two-dimensional nanomaterials in the presence of local point defects that cause resonant electronic states (vacancies, adsorbed atoms or molecules). We present studies on monolayer graphene, twisted or Bernal bilayer graphene, carbon nanotubes, monolayer and multilayer black phosphorene, and monolayer TMDs. A recent result is the discovery that the selective functionalization of a Bernal bilayer graphene sublattice leads to a metallic or insulating behavior depending on the functionalized sublattice type. This result, which seems to be confirmed by very recent experimental measurements, suggests that functionalization can be a key parameter to control the electronic properties of two-dimensional materials.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"175 ","pages":"Article 116362"},"PeriodicalIF":2.9,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145097117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}