Physica E-low-dimensional Systems & Nanostructures最新文献_第7页

In-plane and out-of-plane domain orientation dispersions in 1 to 3 monolayers epitaxial WS2 and MoS2 films on GaN(0001) film/sapphire(0001) GaN(0001) 薄膜/蓝宝石(0001)上 1 至 3 单层外延 WS2 和 MoS2 薄膜的面内和面外畴取向分散

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-10-01 DOI: 10.1016/j.physe.2024.116117

Shalini Kumari , Neha Dhull , Weichang Lin , Zonghuan Lu , Joan Redwing , Toh-Ming Lu , Gwo-Ching Wang

{"title":"In-plane and out-of-plane domain orientation dispersions in 1 to 3 monolayers epitaxial WS2 and MoS2 films on GaN(0001) film/sapphire(0001)","authors":"Shalini Kumari , Neha Dhull , Weichang Lin , Zonghuan Lu , Joan Redwing , Toh-Ming Lu , Gwo-Ching Wang","doi":"10.1016/j.physe.2024.116117","DOIUrl":"10.1016/j.physe.2024.116117","url":null,"abstract":"<div><div>Transition-metal dichalcogenides and their heterostructures have attractive potential applications in electronics and optoelectronics. Wafer scale 1 to 3 monolayers WS<sub>2</sub> and MoS<sub>2</sub> ultrathin films on GaN/sapphire substrates were grown by metal organic chemical vapor deposition. Azimuthal reflection high-energy electron diffraction (ARHEED) was used to characterize the long-range order of these TMDC ultrathin films. The RHEED patterns of WS<sub>2</sub> and MoS<sub>2</sub> show stripes and arcs but the MoS<sub>2</sub> on GaN shows sharp spots in addition to stripes and arcs. The 2D map constructed from ARHEED patterns shows that WS<sub>2</sub> is epitaxial and has an in-plane domain orientation dispersion. For the MoS<sub>2</sub> on GaN/sapphire substrate, the 2D map shows concentric continuous rings for each diffraction order of MoS<sub>2</sub> and GaN indicating that the in-plane MoS<sub>2</sub> domain orientation and GaN nanocrystals are random. The out-of-plane orientation dispersion of MoS<sub>2</sub> on the GaN substrate is larger than that of WS<sub>2</sub> on the GaN substrate. The observations of stripes, arcs, and spots from RHEED patterns and the 2D maps reveal the deviation of ultrathin epitaxial films from its perfect epitaxy, especially the TMDC domain orientation dispersion over a large area. These rich findings from 2D maps broaden the application of ARHEED in more than one monolayer thick 2D materials.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116117"},"PeriodicalIF":2.9,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142425332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rogue-wave statistics in Anderson chains 安德森链中的流氓波统计

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-09-28 DOI: 10.1016/j.physe.2024.116114

M.F.V. Oliveira , A.M.C. Souza , M.L. Lyra , F.A.B.F. de Moura , G.M.A. Almeida

引用次数: 0

Characterization of Co-doped Ni-Mn spinel nanoferrites: A Multi-faceted evaluation of structural, optical, elastic, and magnetic properties 钴掺杂镍锰尖晶石纳米铁氧体的表征：结构、光学、弹性和磁性能的多方面评估

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-09-28 DOI: 10.1016/j.physe.2024.116112

B. Aghalli , H. Khandan Fadafan , M.B. Bagherieh Najjar

{"title":"Characterization of Co-doped Ni-Mn spinel nanoferrites: A Multi-faceted evaluation of structural, optical, elastic, and magnetic properties","authors":"B. Aghalli , H. Khandan Fadafan , M.B. Bagherieh Najjar","doi":"10.1016/j.physe.2024.116112","DOIUrl":"10.1016/j.physe.2024.116112","url":null,"abstract":"<div><div>This study presents the synthesis and comprehensive evaluation of nanocrystalline Co<sub>x</sub>Ni<sub>0.5-x</sub>Mn<sub>0.5</sub>Fe<sub>2</sub>O<sub>4</sub> (0.0 ≤ x ≤ 0.5) ferrites. Utilizing a variety of analytical techniques including X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), ultraviolet-visible (UV–Vis) spectroscopy, field emission scanning electron microscopy (FESEM), and vibrating sample magnetometry (VSM), we characterized the structural, optical, elastic, and magnetic properties of the synthesized nanoparticles. Our findings reveal that increasing Co content leads to a systematic increase in lattice constant from 8.33 Å to 8.39 Å and influences the crystallite size, which ranges between 10 and 15 nm as determined by XRD. Notably, the band gaps of these nanoparticles span from 2.8 to 3.6 eV, varying with Co concentration. Magnetic measurements indicate a transition from superparamagnetic-like behavior at x = 0 to enhanced saturation magnetization, remanence, and coercivity with higher Co content. The novelty of this research lies in the detailed correlation between Co substitution and the resultant changes in multiple physical properties of NiMn nanoferrite, offering potential applications in various technological fields such as magnetic storage, sensors, and biomedical applications.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116112"},"PeriodicalIF":2.9,"publicationDate":"2024-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142358032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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P3S nanoribbons with bi-directional superior spin thermoelectric properties 具有双向优异自旋热电特性的 P3S 纳米带

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-09-28 DOI: 10.1016/j.physe.2024.116116

Jing-Jing He , Jia-Bei Dong , Ying Zhang , Qin-Yue Cao , Ling-Xiao Liu , Jun-Yi Gu , Min Hua , Jia-Ren Yuan , Xiao-Hong Yan

{"title":"P3S nanoribbons with bi-directional superior spin thermoelectric properties","authors":"Jing-Jing He , Jia-Bei Dong , Ying Zhang , Qin-Yue Cao , Ling-Xiao Liu , Jun-Yi Gu , Min Hua , Jia-Ren Yuan , Xiao-Hong Yan","doi":"10.1016/j.physe.2024.116116","DOIUrl":"10.1016/j.physe.2024.116116","url":null,"abstract":"<div><div>To meet the demands of low-power micromaterials applications, the generation of pure spin currents in spintronics by utilizing an effective thermal spin conversion mechanism has become a hot topic among researchers. In this paper, based on the newly reported novel 2D P<sub>3</sub>S monolayer, various P<sub>3</sub>S nanoribbons with different edge atom arrangements are formed by one-dimensional tailoring. Intriguingly, the original nonmagnetism is broken in both armchair and zigzag orientations, introducing ferromagnetism contributed mainly by the 3<em>p</em> orbitals of the edge P atoms. More importantly, all bare nanoribbons exhibit peculiar transmission spectra with transmission peaks of opposite spin components located on both sides of the Fermi level. This apparent bipolar magnetic semiconductor property leads to a considerable spin Seebeck coefficient <span><math><mrow><msub><mi>S</mi><mi>s</mi></msub></mrow></math></span> of ∼3 mV/K, which successfully suppresses the charge current and excites a giant spin current. Furthermore, the significant spin-dependent Seebeck effect is robust to width. The bi-directional superior spin thermoelectric properties, simple clipping method, and width robustness make the P<sub>3</sub>S nanoribbons promising and competitive in spintronic devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116116"},"PeriodicalIF":2.9,"publicationDate":"2024-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142425342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature dependence of the electron quantum lifetime in InGaAs/GaAs double quantum well: Fukuyama-Abrahams mechanism InGaAs/GaAs 双量子阱中电子量子寿命的温度依赖性：福山-亚伯拉罕机制

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-09-26 DOI: 10.1016/j.physe.2024.116113

S.V. Gudina, Yu.G. Arapov, V.N. Neverov, A.P. Savelyev, N.S. Sandakov, N.G. Shelushinina, M.V. Yakunin

引用次数: 0

The enhanced characteristics of bipolar phototransistor with huge amplification 具有巨大放大作用的双极型光电晶体管的增强特性

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-09-26 DOI: 10.1016/j.physe.2024.116110

Ruixue Bai , Yaojie Zhu , Xilin Zhang , Yulun Liu , Zuowei Yan , Hui Ma , Chongyun Jiang

{"title":"The enhanced characteristics of bipolar phototransistor with huge amplification","authors":"Ruixue Bai , Yaojie Zhu , Xilin Zhang , Yulun Liu , Zuowei Yan , Hui Ma , Chongyun Jiang","doi":"10.1016/j.physe.2024.116110","DOIUrl":"10.1016/j.physe.2024.116110","url":null,"abstract":"<div><div>Heterojunction devices based on low-dimensional materials have the potential for convenient and efficient photodetection applications. In this study, we demonstrate a van der Waals (vdW) heterojunction device constructed by <em>p</em>-ZrGeTe<sub>4</sub> and <em>n</em>-MoS<sub>2</sub>. Forming a <em>p-n</em> junction, the response speed of the device increased by 6 orders of magnitude compared to devices with individual MoS<sub>2</sub>. To further improve the responsivity of the device, a bipolar phototransistor (PTD) was prepared based on the <em>p-n</em> junction. The PTD achieves the photocurrent gain of almost 40. This PTD achieves high responsivity of 1.48 A W<sup>−1</sup>, and the corresponding specific detectivity can reach 3 × 10<sup>14</sup> Jones in low frequencies. Under low frequencies, the noise of the device is dominated by generation–recombination noise; and as the frequency increases, it gradually becomes dominated by 1/<em>f</em> noise. The PTD is competitive in optoelectronics and promising in high-performance integrated devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116110"},"PeriodicalIF":2.9,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142358031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Interaction of fullerenes C60 with pristine and substituted buckybowls: A theoretical study 富勒烯 C60 与原始和取代的降压波的相互作用：理论研究

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-09-26 DOI: 10.1016/j.physe.2024.116115

Igor K. Petrushenko

引用次数: 0

Post growth annealing of Ga1-xInxNyAs1-y/GaAs double quantum well structures grown on (100), (311)A, and (311)B GaAs substrates 在 (100)、(311)A 和 (311)B GaAs 基底上生长的 Ga1-xInxNyAs1-y/GaAs 双量子阱结构的生长后退火

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-09-24 DOI: 10.1016/j.physe.2024.116109

A. Khatab, O.M. Lemine, N. Al Saqri, Mohamed H. Abdel-Kader, M. Henini

{"title":"Post growth annealing of Ga1-xInxNyAs1-y/GaAs double quantum well structures grown on (100), (311)A, and (311)B GaAs substrates","authors":"A. Khatab, O.M. Lemine, N. Al Saqri, Mohamed H. Abdel-Kader, M. Henini","doi":"10.1016/j.physe.2024.116109","DOIUrl":"10.1016/j.physe.2024.116109","url":null,"abstract":"<div><div>The effect of thermal annealing on the optical properties of In<sub>0.36</sub>Ga<sub>0.64</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs double quantum wells (QWs) grown on different GaAs planes was investigated for two sets of samples having y = 0 % and 1 % nitrogen. It was found that annealing at 700 °C for 30 seconds is the optimum annealing temperature which improves the photoluminesces (PL) efficiency for all QWs. The PL enhancement is larger in samples with 1 % nitrogen than 0 %. This PL improvement, which may be explained by the annihilation of defects introduced by the incorporation of nitrogen, is accompanied by a blue shift. Secondary ion mass spectroscopy (SIMS) shows that In/Ga intermixing, which occurs at the interface between QW and barrier, could account for the origin of this energy shift in QWs grown on (311)A and (100) planes. The amount of diffusion of In out of the QW depends on the growth plane. It is larger for QWs grown on (311)B plane as compared to the other planes. However, in contrast to the (311)B QWs the nitrogen content in the (100) and (311)A QWs doesn't change upon annealing.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116109"},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142319851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of Si/Ge superlattice structure with intermixed interfaces on phonon thermal conductivity 具有混合界面的硅/锗超晶格结构对声子热导率的影响

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-09-20 DOI: 10.1016/j.physe.2024.116108

Alexander L. Khamets , Igor V. Safronov , Andrew B. Filonov , Dmitri B. Migas

{"title":"Effects of Si/Ge superlattice structure with intermixed interfaces on phonon thermal conductivity","authors":"Alexander L. Khamets , Igor V. Safronov , Andrew B. Filonov , Dmitri B. Migas","doi":"10.1016/j.physe.2024.116108","DOIUrl":"10.1016/j.physe.2024.116108","url":null,"abstract":"<div><p>By means of the Monte-Carlo/Molecular Dynamics and the non-equilibrium Molecular Dynamics methods we investigate the cross- and in-plane thermal conductivities of the (001)-, (110)- and (111)-oriented Si/Ge films (2 − 20 nm) and bulk superlattices with an intermixing at interfaces in comparison with the corresponding alloy structures at 300 K. For the first time the anomalous conductivity reduction of the in-plane thermal transport with respect to the film thickness has been revealed. This effect can be caused by interplay of three phonon scattering mechanisms: the phonon-alloy scattering mechanism, which is dominant, and competing phonon-phonon and phonon-surface scatterings due to the phonon depletion and the surface phonon localization, respectively. In general, the estimated minimal in-plane thermal conductivity values are found to be of 1.7 W/(m∙K) for the SiGe alloy thin films. It is established that the cross-plane thermal conductivity in the Si/Ge film superlattices crucially depends on intermixing at interfaces displaying even smaller values (less 1.5 W/(m∙K)) than in the corresponding SiGe alloy structures. We also show Si/SiGe superlattices in comparison with Ge/SiGe ones to provide up to 9 % gain in decreasing of both cross and in-plane thermal conductivities due to specific redistribution of peak weights in phonon density of states, which affect the thermal transport. These results reveal the insights into the application of SiGe-based superlattices and alloys for the cross- and in-plane thermoelectrics from the thermal transport minimization viewpoint.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116108"},"PeriodicalIF":2.9,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142270485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Superluminal propagation of birefringence modes in surface plasmon polaritons through hybrid metallic nanoparticles and chiral systems 表面等离子体极化子双折射模式在混合金属纳米粒子和手性系统中的超光速传播

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-09-17 DOI: 10.1016/j.physe.2024.116106

Fatima Ghulam Kakepoto , Shihua Huang , Muhammad Idrees

{"title":"Superluminal propagation of birefringence modes in surface plasmon polaritons through hybrid metallic nanoparticles and chiral systems","authors":"Fatima Ghulam Kakepoto , Shihua Huang , Muhammad Idrees","doi":"10.1016/j.physe.2024.116106","DOIUrl":"10.1016/j.physe.2024.116106","url":null,"abstract":"<div><p>We have theoretically investigated the enhancement of superluminal birefringence modes of surface plasmon polaritons (SPPs) at the interface of a chiral quantum dot (QD) nanostructure and a metallic nanoparticle (MNP) hybrid system. This configuration facilitates the generation of SPP birefringence modes when illuminated by incident light. The resonances of SPPs within the hybrid nanostructure are determined through analytical calculations using Maxwell’s equations under specific boundary conditions. Additionally, we model the dynamics of the chiral quantum dots system using the density matrix approach, considering it as a four-level configuration interacting with weak probe, magnetic, and strong coupling fields. Our findings indicate that electron tunneling strength and the intensity of the control field significantly influence the birefringence modes of superluminal SPPs. Furthermore, the observation of negative group index and advanced time in the birefringence beams of SPPs provides evidence for the enhanced superluminal birefringence modes. This research has substantial implications across diverse areas such as optical information processing, temporal cloaking, quantum communication, and the advancement of computer chip speed.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116106"},"PeriodicalIF":2.9,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142270484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0