Excellent spin-filtering and giant tunneling magnetoresistance in a van der Waals magnetic tunnel junction based on full-Heusler alloys Co2FeX (X = Si/Al) and 2D vdW materials WSe2/MoS2

IF 2.9 3区物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2025-05-29 DOI:10.1016/j.physe.2025.116299

Shagufta Parveen Asif Akhtar, Santashraya Prasad, Aminul Islam

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引用次数: 0

Abstract

We investigate multiple spin-filter magnetic tunnel junctions (sf-MTJs) based on 2D van der Waals (vdW) materials. WSe₂/MoS₂ acts as a spin-filter tunnel barrier (TB) sandwiched between full-Heusler alloys Co₂FeX (X = Si/Al) contacts. We demonstrate tunneling magnetoresistance (TMR) that is drastically enhanced with increasing TB layer thickness, reaching a record of 11,761.23 % for the Co₂FeAl/3L-MoS₂/Co₂FeAl configuration. By leveraging Density Functional Theory (DFT) simulations and the Non-Equilibrium Green's Function (NEGF) formalism, the magnetic properties of ferromagnetic materials (FM), spin orbit coupling (SOC) of 2D TB materials, tunneling magnetoresistance (TMR), and I-V characteristics of MTJs are thoroughly studied. This comprehensive modelling via electrode interface engineering and simulation framework provides crucial insights into spin injection mechanisms and the behaviour of 2D material systems in spintronic applications.

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基于全heusler合金Co2FeX （X = Si/Al）和二维vdW材料WSe2/MoS2的范德华磁隧道结具有优异的自旋滤波和巨大的隧道磁电阻

我们研究了基于二维范德华（vdW）材料的多自旋滤波器磁隧道结（sf-MTJs）。WSe2/MoS2在全heusler合金Co2FeX （X = Si/Al）触点之间充当自旋过滤器隧道势垒（TB）。我们证明隧道磁电阻（TMR）随着TB层厚度的增加而急剧增强，在Co2FeAl/3L-MoS2/Co2FeAl结构中达到11,761.23%的记录。利用密度泛函理论（DFT）模拟和非平衡格林函数（NEGF）形式，深入研究了铁磁材料（FM）的磁性、二维TB材料的自旋轨道耦合（SOC）、隧穿磁阻（TMR）和mtj的I-V特性。这种通过电极界面工程和仿真框架进行的综合建模为自旋注入机制和自旋电子应用中二维材料系统的行为提供了重要的见解。

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来源期刊

Physica E-low-dimensional Systems & Nanostructures 物理-纳米科技

CiteScore

7.30

自引率

6.10%

发文量

356

审稿时长

65 days

期刊介绍： Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures