Physica E-low-dimensional Systems & Nanostructures最新文献_第5页

Enhanced piezoelectricity induced by transition metal atoms adsorption on monolayer and bilayer MoS2 单层和双层 MoS2 上吸附过渡金属原子诱导的增强压电性

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-11-06 DOI: 10.1016/j.physe.2024.116148

Xinxin Wang, Gaojie Li, Xiaofei Wang, Weiwei Ju, Xiaohong Li

{"title":"Enhanced piezoelectricity induced by transition metal atoms adsorption on monolayer and bilayer MoS2","authors":"Xinxin Wang, Gaojie Li, Xiaofei Wang, Weiwei Ju, Xiaohong Li","doi":"10.1016/j.physe.2024.116148","DOIUrl":"10.1016/j.physe.2024.116148","url":null,"abstract":"<div><div>Piezoelectricity in MoS<sub>2</sub> has attracted extensive attention because of potential applications in energy harvesting and sensors. However, the piezoelectricity of MoS<sub>2</sub> monolayer is weaker than those of traditional piezoelectric materials. Here, based on first principles calculations, we report the large work function transition metal atoms (TMs = Ni, Pd, Pt and Ir) adsorbed on monolayer and bilayer MoS<sub>2</sub> with large out-of-plane piezoelectric polarization. For TMs adsorbed on monolayer MoS<sub>2</sub>, the Ir and Ni adsorption exhibit stronger adsorption energy and larger migration barrier compared with Pd and Pt adsorption. All structures maintain dynamical stability at 300 K and exhibit p-type semiconducting band structures. The larger out-of-plane piezoelectric coefficients induced by adsorption increase with increasing the adsorption concentration, accompanied with slightly decreased in-plane piezoelectric coefficients, which is attributed to more and more electrons participating in redistribution along the out-of-plane direction. For TMs adsorbed bilayer MoS<sub>2</sub>, the energetically favorable configuration has same polarization orientation between two monolayers, which results in increased in-plane piezoelectric coefficients. The out-of-plane piezoelectric coefficients further increase due to the coupling of interlayer vertical polarization and TMs adsorption induced vertical polarization. Our results provide a possible way to increase the piezoelectricity of MoS<sub>2</sub>.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"166 ","pages":"Article 116148"},"PeriodicalIF":2.9,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142659499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Giant excitonic magneto-Stark effect in wide GaAs/AlGaAs quantum wells 宽砷化镓/砷化镓量子阱中的巨激子磁-斯塔克效应

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-10-31 DOI: 10.1016/j.physe.2024.116134

D.K. Loginov, I.V. Ignatiev

引用次数: 0

Fluorinated carbon nanotube-insulator–metal diodes: Predictions from first-principles calculations 氟化碳纳米管-绝缘体-金属二极管：第一原理计算预测

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-10-30 DOI: 10.1016/j.physe.2024.116133

G.R. Berdiyorov

引用次数: 0

Single-layer black phosphorus-enhanced narrowband perfect absorber in the terahertz range 太赫兹范围内的单层黑磷增强型窄带完美吸收器

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-10-29 DOI: 10.1016/j.physe.2024.116144

Pengfei Sun , Lijing Su , Sihan Nie , Xin Li , Yaxin Zhou , Yang Gao

引用次数: 0

Type-II induced quantum confinement in type-I heterostructured semiconductor nanowires I 型异质结构半导体纳米线中的 II 型诱导量子约束

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-10-28 DOI: 10.1016/j.physe.2024.116132

Temerson F.O. Lara , Diego R. da Costa , Alice R. de Almeida , Ariel A. de Sousa , André J. Chaves , Andrey Chaves , Teldo A.S. Pereira

{"title":"Type-II induced quantum confinement in type-I heterostructured semiconductor nanowires","authors":"Temerson F.O. Lara , Diego R. da Costa , Alice R. de Almeida , Ariel A. de Sousa , André J. Chaves , Andrey Chaves , Teldo A.S. Pereira","doi":"10.1016/j.physe.2024.116132","DOIUrl":"10.1016/j.physe.2024.116132","url":null,"abstract":"<div><div>We theoretically investigate the electronic properties of semiconductor nanowires with axial heterostructure. We employ the effective mass approximation within envelope wavefunction formalism to analyze the behavior of charge carriers in nanowires composed of two semiconductor materials with different energy gaps, grown along the wire axis, with a cylindrically symmetric shape. We start by considering a type-I band alignment, resulting in the formation of a quantum well structure. Then, we demonstrate that modifications in the effective mass and the structural parameters of the system make it possible to change the type of the band alignment, thus dictating the carrier confinement. For certain values of the wire radius and the ratio of effective masses between the well and barrier regions, the contribution of the kinetic energy term to the total effective confinement potential becomes predominant compared to the mismatched band potential. This leads to a switching in the preferential spatial distribution of the wave functions towards the barrier region, exhibiting characteristics of a type-II induced axial junction.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"166 ","pages":"Article 116132"},"PeriodicalIF":2.9,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142659500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Yu-Shiba-Rusinov bound states boost surface odd-frequency pairing Yu-Shiba-Rusinov 边界态促进表面奇频配对

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-10-26 DOI: 10.1016/j.physe.2024.116127

Subhajit Pal, Colin Benjamin

{"title":"Yu-Shiba-Rusinov bound states boost surface odd-frequency pairing","authors":"Subhajit Pal, Colin Benjamin","doi":"10.1016/j.physe.2024.116127","DOIUrl":"10.1016/j.physe.2024.116127","url":null,"abstract":"<div><div>We predict that the appearance of zero-energy Yu-Shiba-Rusinov(YSR) bound states in two different setups, metal-spin flipper-metal-s-wave superconductor (<span><math><mrow><msub><mrow><mi>N</mi></mrow><mrow><mn>1</mn></mrow></msub><mo>−</mo><mi>s</mi><mi>f</mi><mo>−</mo><msub><mrow><mi>N</mi></mrow><mrow><mn>2</mn></mrow></msub><mo>−</mo><mi>S</mi></mrow></math></span>) and superconductor-metal-spin flipper-metal-superconductor (<span><math><mrow><mi>S</mi><mo>−</mo><msub><mrow><mi>N</mi></mrow><mrow><mn>1</mn></mrow></msub><mo>−</mo><mi>s</mi><mi>f</mi><mo>−</mo><msub><mrow><mi>N</mi></mrow><mrow><mn>2</mn></mrow></msub><mo>−</mo><mi>S</mi></mrow></math></span>) junctions, can cause a multi-fold enhancement of surface odd-frequency superconducting pairing. On the other hand, in the absence of these bound states, even-frequency pairing dominates surface odd-frequency pairing. Specifically, in the <span><math><mrow><mi>S</mi><mo>−</mo><msub><mrow><mi>N</mi></mrow><mrow><mn>1</mn></mrow></msub><mo>−</mo><mi>s</mi><mi>f</mi><mo>−</mo><msub><mrow><mi>N</mi></mrow><mrow><mn>2</mn></mrow></msub><mo>−</mo><mi>S</mi></mrow></math></span> Josephson junction, the emergence of zero energy YSR bound states leads to a <span><math><mrow><mn>0</mn><mo>−</mo><mi>π</mi></mrow></math></span> junction transition and surface odd-frequency pairing dominance. Notably, odd-frequency pairing vanishes in the absence of the YSR-bound states. Interestingly, the equal spin–triplet pairing is the dominant component in odd-frequency superconductivity in both setups, which could have important implications for superconducting spintronics. Overall, our findings may help to detect the presence of YSR-bound states through the observation of surface odd-frequency pairing and contribute to a better understanding of their relationship.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"166 ","pages":"Article 116127"},"PeriodicalIF":2.9,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Overall water splitting of type-I vdW heterojunction ZnS/Ga2SSe I 型 vdW 异质结 ZnS/Ga2SSe 的整体水分离效果

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-10-16 DOI: 10.1016/j.physe.2024.116130

Taiyu Hao , Qingyi Feng , Biyi Wang , Zhiwei Li , Bo Li , Hongxiang Deng

{"title":"Overall water splitting of type-I vdW heterojunction ZnS/Ga2SSe","authors":"Taiyu Hao , Qingyi Feng , Biyi Wang , Zhiwei Li , Bo Li , Hongxiang Deng","doi":"10.1016/j.physe.2024.116130","DOIUrl":"10.1016/j.physe.2024.116130","url":null,"abstract":"<div><div>In the domain of photocatalysis, type I heterojunctions have received limited attention, and the quest for effective type I photocatalysts persists. This study introduces a novel type I heterostructure, ZnS/Ga<sub>2</sub>SSe, and gives a systematic investigation of its electronic properties, optical properties, and photocatalytic performance by DFT calculations. Electronic properties show that ZnS/Ga<sub>2</sub>SSe system has a type I band alignment with a 2.26 eV band gap. Different from traditional type I heterostructure, ZnS/Ga<sub>2</sub>SSe has an obvious interfacial electric field and a potential barrier, which promotes spatial charge separation and addresses the drawback of easy recombination of photo-generated carriers in traditional type I heterojunctions. The calculated results of Gibbs free energy show that under the 3.3 eV external potential and pH = 14, water splitting reaction can be achieved spontaneously. Moreover, the heterojunction shows good optical absorption in visible regions and 22.28 % STH efficiency which is higher than the reported type I photocatalysts. The biaxial strain can modulate the electronic structure and maintain type I alignment. Tensile can reduce the bandgap and enhance optical absorption, while compression is the opposite. Under 4 % tensile, STH efficiency can reach 40.3 %, while −4 % compression it will decrease to 10.3 %. These conclusions underline the potential of the ZnS/Ga<sub>2</sub>SSe heterojunction as a promising photocatalytic material candidate for water splitting and type I heterojunctions is worth exploring as photocatalysis.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116130"},"PeriodicalIF":2.9,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The key role of anti-solvent temperature in quantum dot/perovskite core-shell nanowire array solar cells 量子点/过氧化物核壳纳米线阵列太阳能电池中反溶剂温度的关键作用

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-10-12 DOI: 10.1016/j.physe.2024.116131

Yin Ren , Lin He , Yunfei He , Yahong Wang , Sisi Li , Luming Zhou , Peng Ye , Rongli Gao , Gang Chen , Wei Cai , Chunlin Fu

{"title":"The key role of anti-solvent temperature in quantum dot/perovskite core-shell nanowire array solar cells","authors":"Yin Ren , Lin He , Yunfei He , Yahong Wang , Sisi Li , Luming Zhou , Peng Ye , Rongli Gao , Gang Chen , Wei Cai , Chunlin Fu","doi":"10.1016/j.physe.2024.116131","DOIUrl":"10.1016/j.physe.2024.116131","url":null,"abstract":"<div><div>Combining perovskite with infrared quantum dots to construct a core-shell nanostructure nanowire array solar cell can increase the light absorption range and enhance the light absorption and carrier transport efficiency of the solar cell. However, the preparation of a perovskite absorber layer on a nanowire array with quantum dots often presents issues such as high roughness and a large number of lattice defects, which have a negative impact on the photovoltaic performance. The anti-solvent method is a commonly used technique to improve the quality of perovskite. The temperature variation of the anti-solvent can change solubility, and influence the reaction rate and crystal formation process of perovskite, thus affecting its photovoltaic performance. In this study, the quality of perovskite in the core-shell nanostructure nanowire array was improved by controlling the temperature of the anti-solvent (toluene). Experimental results show that as the temperature of toluene increases, the photovoltaic performance is gradually improved. When the toluene temperature was maintained at 75 °C, the device exhibited significantly improved photovoltaic performance with an efficiency of 12.64 %, surpassing the efficiency obtained without any anti-solvent modification. As the temperature of the anti-solvent increases, the absorption of visible and near-infrared light spectrum by the nanowire arrays is enhanced, which promotes the efficient generation of photo-generated carriers. Furthermore, defects in the nanowire arrays gradually decrease, leading to a reduction in carrier recombination. These findings provide valuable insights for advancing core-shell nanostructure nanowire array solar cells.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116131"},"PeriodicalIF":2.9,"publicationDate":"2024-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142446081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparative study of NiO based core-shell nanocomposites to high performance supercapacitor electrode materials 基于氧化镍的核壳纳米复合材料与高性能超级电容器电极材料的比较研究

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-10-11 DOI: 10.1016/j.physe.2024.116121

Jhalak Gupta , Arham S. Ahmed , Pushpendra , Ameer Azam

{"title":"Comparative study of NiO based core-shell nanocomposites to high performance supercapacitor electrode materials","authors":"Jhalak Gupta , Arham S. Ahmed , Pushpendra , Ameer Azam","doi":"10.1016/j.physe.2024.116121","DOIUrl":"10.1016/j.physe.2024.116121","url":null,"abstract":"<div><div>In this research work, we prepared NiO@SnO<sub>2</sub> (N1), NiO@ZnO (N2) and NiO@MnO<sub>2</sub> (N3) core-shell nanocomposites using sol-gel route. Prepared samples were investigated for their different properties employing various characterization techniques. The morphology and structure of the nanocomposites were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy, Fourier transform Infrared Spectroscopy, X-ray diffraction analysis. Furthermore, the optical properties were analyzed using UV–Vis Spectroscopy, Photoluminescence Spectroscopy. In addition, the supercapacitive performances were examined by cyclic voltammogram (CV), galvanostatic charge-discharge(GCD) and electrochemical impedance spectroscopy (EIS). The electrochemical results indicate that all the prepared composites exhibits good electrochemical performance but N2 depicts superior results among all. The specific capacitance obtained for N2 is 720 F/g at 1 A g<sup>−1</sup> and excellent cycling stability (96.5 % retention after 6000 cycles at 1 A g<sup>−1</sup>). Therefore, this wok offers meaningful reference for supercapacitor applications in the future.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116121"},"PeriodicalIF":2.9,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modulation of electronic and thermal properties of boron phosphide nanotubes under electric and magnetic fields 电场和磁场下磷化硼纳米管的电子和热特性调制

IF 2.9 3区物理与天体物理

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-10-10 DOI: 10.1016/j.physe.2024.116125

Nooshin Rashidi , Rostam Moradian

{"title":"Modulation of electronic and thermal properties of boron phosphide nanotubes under electric and magnetic fields","authors":"Nooshin Rashidi , Rostam Moradian","doi":"10.1016/j.physe.2024.116125","DOIUrl":"10.1016/j.physe.2024.116125","url":null,"abstract":"<div><div>This work theoretically investigates the thermoelectric properties of boron phosphide nanotubes (BPNTs) using the tight-binding model, Green function method, and Kubo formalism, focusing on a zigzag BPNT with indices (20, 0). The tight binding parameters obtained by matching its band structure with calculated density functional theory band structure. The study examines the effects of transverse electric fields and axial magnetic fields on various physical properties, such as band structure, density of states (DOS), heat capacity, magnetic susceptibility, and other thermoelectric properties. BPNTs consistently show semiconducting properties with a nearly 1 eV direct band gap. The electronic properties of BPNTs are significantly affected by applied electric field, which at very strong strengths can induce a semiconducting to metallic phase transition. In contrast, the magnetic field leads to the splitting of energy bands, especially around the Fermi level. The DOS also changes with the electric field, including variations in the position, intensity, and number of DOS peaks. The thermal properties and thermoelectric performance of BPNTs are temperature-dependent. Increasing of excited electrons thermal energy cause more occupation of high energy levels in the conduction bands. The electric field further enhances the thermal properties of BPNTs by modifying their electronic properties and reducing the band gap. Stronger electric fields cause a noticeable enhancement in the BPNTs thermal properties because it is increasing the concentration of excited charge carriers. This aspect is crucial for improving the thermoelectric efficiency of BPNTs, making them more competitive for practical applications.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116125"},"PeriodicalIF":2.9,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0