International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)最新文献

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Study on the interfaces between copper alloys for lead frame and Sn-Pb solder alloys 引线框架用铜合金与锡铅钎料合金界面的研究
W. Qian, S. Lee, Cao Yuwen, M. Ju-sheng
{"title":"Study on the interfaces between copper alloys for lead frame and Sn-Pb solder alloys","authors":"W. Qian, S. Lee, Cao Yuwen, M. Ju-sheng","doi":"10.1109/EMAP.2000.904185","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904185","url":null,"abstract":"The reliability of solder joints is deeply affected by microelements in solder or matrix materials. The microstructures and their changes under high temperature aging of the interfaces between four civil copper alloys for lead frames and Sn-Pb eutectic solder are investigated. It is found that the Zn element in copper alloys influences the intermetallic compound layers, because Zn blocks the diffusion of Cu and Sn atoms through the interfaces and the increase of the thickness of Cu-Sn intermetallic compound layers slows down. As a result, the fatigue resistance of solder joints is improved.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124927062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A method for evaluating delamination between epoxy moulding compounds and different plated leadframes 一种评价环氧成型化合物与不同电镀引线之间分层的方法
Wai Lam, T. S. Yeung, A. Teng, M. Yuen
{"title":"A method for evaluating delamination between epoxy moulding compounds and different plated leadframes","authors":"Wai Lam, T. S. Yeung, A. Teng, M. Yuen","doi":"10.1109/EMAP.2000.904157","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904157","url":null,"abstract":"Interfacial fracture toughness acting as true adhesion strength has been identified as a key factor in evaluating delamination problems of IC plastic packages. However, since most conventional adhesion tests are not configured to obtain this bi-material fracture toughness constant (only apparent adhesion strengths varying with specimen geometry and loading position), their results cannot be used for structural design and material selection purposes. This study employed an end notch flexure (ENF) test to determine, by means of finite element analysis (FEA), the true adhesion strength expressed in terms of resultant stress intensity factor of mixed mode I and mode II fracture. The ENF test was successfully applied to specimens composed of epoxy moulding compounds (EMCs) and 3 different leadframes such as bare Cu, Ni plated Cu and black oxide Cu for adhesion evaluation without any moisture preconditioning. The results indicated that most epoxy compounds adhering to black oxide Cu can achieve relatively high fracture toughness, but in opposite behaviour to Ni plated Cu. It has been verified that there is a strong correlation between these findings and the occurrence of package delamination in real cases. Indeed, for a specific IC package, the selection of plating materials for adhesion improvement may directly rely on the corresponding fracture toughness found, as the mechanical effect of thin plating material can be negligible.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121563917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Development of environmental friendly (green), thermally enhanced mold compound (TEMC) for advanced packages 开发环境友好(绿色),热增强模具复合材料(TEMC)的先进封装
T. Tan, N. Mogi, L. Yeoh
{"title":"Development of environmental friendly (green), thermally enhanced mold compound (TEMC) for advanced packages","authors":"T. Tan, N. Mogi, L. Yeoh","doi":"10.1109/EMAP.2000.904147","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904147","url":null,"abstract":"This paper outlines the development and performance of a new series of mold compounds with thermal conductivity (/spl lambda/) up to 100/spl times/10/sup -4/ cal/cm/spl middot/s/spl middot/C (4.2 W/m/spl middot/K). The alumina and mixture of aluminum nitride and alumina filled mold compound feature a coefficient of thermal expansion of /spl sim/10 ppm/K, low warpage with one-side molded BGAs and good anti-solder cracking performance. Being \"green\", these halogen and antimony free encapsulants are able to pass high temperature storage life (HTSL) tests at 175/spl deg/C for more than 1000 hrs. These features are made possible with use of optimum combinations of a carefully selected filler system (up to /spl sim/80vol%), epoxy resin system, latent catalyst and new \"green\" compound technology. Thermal performance indices such as /spl theta//sub ja/ values at board level are currently being measured.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121740328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Wafer level lead free solder bumping process and characterization 晶圆级无铅焊料碰撞工艺及表征
G. Viswanadam, Le Han
{"title":"Wafer level lead free solder bumping process and characterization","authors":"G. Viswanadam, Le Han","doi":"10.1109/EMAP.2000.904127","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904127","url":null,"abstract":"The paper introduces an overview of the lead free solder bumping process with a solder paste printing method. The bumping process and process variations for three different lead free solder pastes are discussed. Performance matrices include bump height, bump diameter, and shear strength variations with respect to reliability conditions such as multiple reflows, temperature cycling, temperature/humidity, pressure cooker test, and high temperature storage test, are discussed in the paper.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131427537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Energy based failure criterion for interfacial delamination [IC packaging] 基于能量的界面分层失效准则[IC封装]
P. Chung, S. Chan, M. Yuen, D. Lam, A. Teng
{"title":"Energy based failure criterion for interfacial delamination [IC packaging]","authors":"P. Chung, S. Chan, M. Yuen, D. Lam, A. Teng","doi":"10.1109/EMAP.2000.904155","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904155","url":null,"abstract":"Plastic integrated circuit packages can fail due to delamination between the interfaces of the different materials. The adhesion properties across the interface of the epoxy encapsulant and the substrate are important to package reliability. The button shear test is one of the standard tests carried out to evaluate the interfacial adhesion material properties. This paper presents a method to derive a criterion for interfacial delamination using the result of the button shear test. A series of button shear tests was conducted to evaluate the adhesion properties of epoxy molding compounds (EMCs) on copper substrates. In each of the tests, the critical load acting on the EMC of the button shear sample was measured at different shear heights and a finite element model was used to evaluate the stresses at the interface between the mold compound and the copper substrate. The distortional and hydrostatic strain energy densities across the interface were also calculated. The test was also applied to a range of EMC materials. The distortional energy was found to have a linear relationship with the square of the fracture load and the EMC's Young's modulus. The hydrostatic energy was also found to have a similar but marginally different relationship with those terms. The result of the energy densities across the interface at different shear heights was also reviewed. Based on these observations, a delamination criterion was developed which includes the ratio of the distortional and hydrostatic energy density. The delamination criterion is to be tested on packages under thermal loading.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133271500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Wafer level CSP process by VPES (vacuum printing encapsulation systems) VPES(真空印刷封装系统)晶圆级CSP工艺
A. Okuno
{"title":"Wafer level CSP process by VPES (vacuum printing encapsulation systems)","authors":"A. Okuno","doi":"10.1109/EMAP.2000.904144","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904144","url":null,"abstract":"BGA and CSP markets are increasing, but these technologies use plastic or ceramic substrates as interposers, and the packaging size is really larger than chip size. Recently, wafer level CSP as extremity packaging has been introduced. This packaging method starts with the transfer molding method. However, transfer molding of epoxy resin can cause large warpage due to thermal expansion mismatch between wafer and insulating layer after molding, and reliability is poor. In this paper, we developed low cost and high reliability wafer level CSP packaging. We developed very low warpage, low expansion, high adhesive strength, and high purity encapsulating liquid epoxy resin. The coating method used VPES (vacuum printing encapsulation systems) to produce void-free packaging. VPES is very suitable for large scale production. We achieved low cost and high reliability wafer level CSPs as extremity packaging with a good combination of low warpage epoxy resin and VPES.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"594 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134405183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Study on influence of environment on adhesion performance of underfill for flip chip application 环境对倒装用底填料粘接性能的影响研究
S. Luo, C. Wong
{"title":"Study on influence of environment on adhesion performance of underfill for flip chip application","authors":"S. Luo, C. Wong","doi":"10.1109/EMAP.2000.904162","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904162","url":null,"abstract":"This paper systematically discusses environmental effects (temperature and humidity) on the adhesion performance of underfill materials. The adhesion strengths of underfill with passivation materials were measured by die shear tests for various conditions. The adhesion strength between underfill and passivation is not affected significantly after thermal cycling tests for 1000 cycles. Die shear tests at elevated temperatures showed that underfill adhesion strength decreases with increase in test temperature above room temperature. The decreased adhesion strength versus temperature is probably due to the decrease of underfill modulus with increase in temperature. The sharp decrease occurs at a temperature below the glass transition temperature of the underfill. Underfill adhesion strength with different passivation materials decreases after aging in a high temperature/humidity environment. The adhesion degradation after high temperature/humidity aging is dependent on the hydrophilicity of the passivation. Hydrophilic passivation, e.g. SiO/sub 2/ and SiN, shows much more severe adhesion degradation than hydrophobic passivation such as benzocyclobutene and polyimide. It is shown that adhesion stability for hydrophilic passivation can be successfully improved by use of coupling agents such as silane that introduce stable chemical bonds at the interface. Moisture diffusion kinetics into the 2 mm/spl times/2 mm die shear sample were studied. Although the adhesion strength degradation is due to moisture diffusion into the underfill, the adhesion degradation rate of die shear samples during aging at 85/spl deg/C/85% RH is slower than moisture diffusion.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128766289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Mixed mode fracture toughness characterization for interface and interlayer cracks in adhesive bonded joints 粘接接头界面和层间裂纹的混合模式断裂韧性表征
H. Pang, S.N. Bong, X. Shi, Z. Wang
{"title":"Mixed mode fracture toughness characterization for interface and interlayer cracks in adhesive bonded joints","authors":"H. Pang, S.N. Bong, X. Shi, Z. Wang","doi":"10.1109/EMAP.2000.904154","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904154","url":null,"abstract":"An approach based on fracture mechanics was employed to assess adhesive bond failure. Two types of fracture specimens were investigated. The Brazil nut sandwich (BNS) specimen and the compact mixed mode (CMM) specimen were used to determined the fracture toughness of adhesive joints. Fracture toughness measurements for interface crack and interlayer crack specimens were investigated. Mixed mode fracture criteria for interface or interlayer cracks in adhesive bonded joints were developed. The results showed that the mode II fracture toughness generally displayed a larger value than the mode I toughness. In the case of the CMM specimen, fracture toughness for interface crack feature toughness is lower than that for a cohesive interlayer crack failure. Failure analysis diagrams were generated for both interlayer and interface crack configurations.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132346227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
An investigation into curing behavior and kinetics of underfills for flip chip packages 倒装晶片封装底填料的固化行为及动力学研究
Z. Fan, Ming Li, Lin Ting, Chiu Cheng-Hsin, W.T. Chen
{"title":"An investigation into curing behavior and kinetics of underfills for flip chip packages","authors":"Z. Fan, Ming Li, Lin Ting, Chiu Cheng-Hsin, W.T. Chen","doi":"10.1109/EMAP.2000.904172","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904172","url":null,"abstract":"Flip-chip technology is becoming increasingly attractive for high performance ICs. However, flip chip package solder joints suffer thermomechanical fatigue and creep failures due to the CTE mismatch between silicon die and substrate. Flip chip underfills are used to redistribute CTE mismatch stresses over the entire device/substrate interfaces to improve solder joint reliability. However, underfill materials require a long cure time, and the final physical and mechanical properties of underfill materials depend greatly on the degree of curing. It is thus of great importance to study the curing behavior and kinetics of underfills. Two conventional capillary underfills and one no-flow underfill were used in this study. Both isothermal and dynamic differential scanning calorimetry (DSC) were used to characterize the curing processes. An auto-catalyzed kinetic model was applied to describe the underfill curing for different temperatures and times. Good agreement was found between the kinetic model and experimental results. From DSC analysis, underfill curing reaction orders and constants could be calculated using software developed in-house. As the reaction constant and curing temperature followed the Arrhenius relationship, the activation energy of the curing process could also be determined. Flux application is necessary in a flip chip process and flux residues may interact with the underfill during the flow and curing processes. In this study, two types of no-clean flux (a low viscosity liquid flux and a high viscosity tacky flux) were applied. Results showed the effects of fluxes on the underfill transition temperatures and CTEs.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"359 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133923745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Creep analysis of solder bumped direct chip attach (DCA) on microvia build-up printed circuit board with underfill 带衬底的微孔堆积印刷电路板上焊料碰撞直接贴片(DCA)的蠕变分析
J. Lau, S. Pan, C. Chang
{"title":"Creep analysis of solder bumped direct chip attach (DCA) on microvia build-up printed circuit board with underfill","authors":"J. Lau, S. Pan, C. Chang","doi":"10.1109/EMAP.2000.904142","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904142","url":null,"abstract":"The creep analysis of solder-bumped flip-chip on microvia build-up printed circuit board (PCB) with underfill encapsulant subjected to thermal cycling conditions are presented. Emphasis is placed on the effects of the conventional PCB's additional microvia build-up circuits on the solder joint reliability of the direct chip attach (DCA) assembly. The 62Sn-36Pb-2Ag solder joints are assumed to obey the Garofalo-Arrhenius steady-state creep constitutive law. The shear stress and shear creep strain hysteresis loops, shear stress history, and shear creep strain history at the corner solder joint, and the von Mises stress and effective plastic strain in the microvia are presented for a better understanding of the thermal-mechanical behaviors of the solder bumped flip chip on build-up PCB with microvia circuits. It is found that, due to the very large thermal expansion mismatch among the silicon chip, solder joints, underfill encapsulant, build-up resin, electroplated copper microvia, and the FR-4 epoxy glass PCB, the stress and strain in the solder joints are higher than those of a DCA on a conventional PCB.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":" 14","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120830955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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