{"title":"Improved NH3 Gas Sensing Performance of Femtosecond‐Laser Textured Silicon by the Decoration of Au Nanoparticles","authors":"Yuan Li, Hua Li, Binbin Dong, Xiaolong Liu, Guojin Feng, Li Zhao","doi":"10.1002/pssr.202400015","DOIUrl":"https://doi.org/10.1002/pssr.202400015","url":null,"abstract":"The escalating environmental concerns have stimulated the demand for NH3 gas sensors, which are indispensable for real‐time data collection in pollution monitoring. To address this need, we design an optimized NH3 sensor based on femtosecond‐laser textured silicon decorated with Au nanoparticles. The morphologies and microstructures of the fabricated samples are characterized by SEM and XRD technologies. The gas‐sensing results demonstrated that the modification of Au nanoparticles significantly enhances the NH3 gas‐sensing performances. Specifically, the sensor based on the textured silicon decorated with Au nanoparticles exhibits a remarkable response of 16.02% toward 20 ppm NH3, which is 4.7 times higher than that of the pristine textured silicon gas sensor at room temperature. In addition, it also demonstrates shortened response and recovery time (26s/98s), showing good selectivity and long‐term availability. The enhanced NH3‐sensing mechanism of the sensor is elucidated, mainly due to the synergistic effect of textured silicon and Au nanoparticles. These contribute to the development of portable, wearable, and intelligent sensor equipment.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"40 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139846751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Improved NH3 Gas Sensing Performance of Femtosecond‐Laser Textured Silicon by the Decoration of Au Nanoparticles","authors":"Yuan Li, Hua Li, Binbin Dong, Xiaolong Liu, Guojin Feng, Li Zhao","doi":"10.1002/pssr.202400015","DOIUrl":"https://doi.org/10.1002/pssr.202400015","url":null,"abstract":"The escalating environmental concerns have stimulated the demand for NH3 gas sensors, which are indispensable for real‐time data collection in pollution monitoring. To address this need, we design an optimized NH3 sensor based on femtosecond‐laser textured silicon decorated with Au nanoparticles. The morphologies and microstructures of the fabricated samples are characterized by SEM and XRD technologies. The gas‐sensing results demonstrated that the modification of Au nanoparticles significantly enhances the NH3 gas‐sensing performances. Specifically, the sensor based on the textured silicon decorated with Au nanoparticles exhibits a remarkable response of 16.02% toward 20 ppm NH3, which is 4.7 times higher than that of the pristine textured silicon gas sensor at room temperature. In addition, it also demonstrates shortened response and recovery time (26s/98s), showing good selectivity and long‐term availability. The enhanced NH3‐sensing mechanism of the sensor is elucidated, mainly due to the synergistic effect of textured silicon and Au nanoparticles. These contribute to the development of portable, wearable, and intelligent sensor equipment.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":" 18","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139786723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Dual Substrate Effect of Silicon Substrate on Thermal Transport Characteristic of (14,14,14)‐Graphyne: Transformation from Conventional Suppressing Role to Abnormal Promoting Role","authors":"Yufei Gao, Zheyi Zhang, Xiaoliang Zhang, Yanguang Zhou, Dawei Tang","doi":"10.1002/pssr.202400003","DOIUrl":"https://doi.org/10.1002/pssr.202400003","url":null,"abstract":"In this letter, (14,14,14)‐graphyne (GY) supported by silicon substrate is chosen to be research object. Our results demonstrate that the increasing distance between substrate and supported materials (d\u0000sub‐sup\u0000) results in the enhancement of thermal conductivity (TC) of supported GY, and the TC of supported GY is even higher than that of free‐standing GY when d\u0000sub‐sup\u0000 exceeds a certain value, which means substrate plays an abnormal promoting role in the thermal transport in supported materials (SM). This phenomenon breaks the traditional cognition that the increasing d\u0000sub‐sup\u0000 can only lead to the TC of SM approaching that of free‐standing model. The related mechanism can be seen as the combined impact of weak interaction of long‐d\u0000sub‐sup\u0000 substrate and tensile effect led by lattice mismatch between substrate and GY. Combining with phonon analysis, it can be observed that the influence of substrate shows closer relationship with phonon scattering, i.e., the anharmonicity, especially the anharmonicity of out‐of‐plane direction. The anomalous promoting effect of long‐d\u0000sub‐sup\u0000 can be also attributed to the weaker scattering of out‐of‐plane phonon, especially the reduced four‐order phonon scattering. Our research provides a new idea to suppress the negative effect of substrate on heat dissipation in electronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"13 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139851380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Dual Substrate Effect of Silicon Substrate on Thermal Transport Characteristic of (14,14,14)‐Graphyne: Transformation from Conventional Suppressing Role to Abnormal Promoting Role","authors":"Yufei Gao, Zheyi Zhang, Xiaoliang Zhang, Yanguang Zhou, Dawei Tang","doi":"10.1002/pssr.202400003","DOIUrl":"https://doi.org/10.1002/pssr.202400003","url":null,"abstract":"In this letter, (14,14,14)‐graphyne (GY) supported by silicon substrate is chosen to be research object. Our results demonstrate that the increasing distance between substrate and supported materials (d\u0000sub‐sup\u0000) results in the enhancement of thermal conductivity (TC) of supported GY, and the TC of supported GY is even higher than that of free‐standing GY when d\u0000sub‐sup\u0000 exceeds a certain value, which means substrate plays an abnormal promoting role in the thermal transport in supported materials (SM). This phenomenon breaks the traditional cognition that the increasing d\u0000sub‐sup\u0000 can only lead to the TC of SM approaching that of free‐standing model. The related mechanism can be seen as the combined impact of weak interaction of long‐d\u0000sub‐sup\u0000 substrate and tensile effect led by lattice mismatch between substrate and GY. Combining with phonon analysis, it can be observed that the influence of substrate shows closer relationship with phonon scattering, i.e., the anharmonicity, especially the anharmonicity of out‐of‐plane direction. The anomalous promoting effect of long‐d\u0000sub‐sup\u0000 can be also attributed to the weaker scattering of out‐of‐plane phonon, especially the reduced four‐order phonon scattering. Our research provides a new idea to suppress the negative effect of substrate on heat dissipation in electronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":" 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139791762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ferroelectric Control of Band Alignments in In2Se3/h‐BN and CuInP2S6/h‐BN Van der Waals Heterostructures","authors":"Songmin Liu, Pan Zhou, Pengfei Hou, Lizhong Sun","doi":"10.1002/pssr.202300479","DOIUrl":"https://doi.org/10.1002/pssr.202300479","url":null,"abstract":"Two‐dimensional ferroelectric (FE) heterostructures have recently become a subject of great interest due to their potential device applications and the underlying physics involved. In this study, we employ the first‐principles calculations to examine the FE control of electronic structures in 2D FE heterostructures, specifically In2Se3/h‐BN and CuInP2S6(CIPS)/h‐BN. Our results demonstrate that by reversing the polarization of the FE layers, the band alignment of the heterostructures can be interconverted between type−II and type−I. For In2Se3/h‐BN, the variation of out‐of‐plane polarization can be attributed to the hindrance and facilitation of charge transfer from h‐BN to In2Se3 by the intrinsic electric field of the In2Se3 monolayer. For CIPS/h‐BN heterostructures, the higher transferred charge in the Cdn configuration due to the presence of built‐in electric fields and the stronger interfacial interaction in the Cdn configuration results in a higher polarization value compared to the Cdn configuration. Moreover, the carrier mobility of the heterostructures can also be effectively modulated by the FE polarization. These findings highlight the potential significance of FE heterostructures with tunable band alignment and band gap in the development of nanoscale optoelectronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"265 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139857832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ferroelectric Control of Band Alignments in In2Se3/h‐BN and CuInP2S6/h‐BN Van der Waals Heterostructures","authors":"Songmin Liu, Pan Zhou, Pengfei Hou, Lizhong Sun","doi":"10.1002/pssr.202300479","DOIUrl":"https://doi.org/10.1002/pssr.202300479","url":null,"abstract":"Two‐dimensional ferroelectric (FE) heterostructures have recently become a subject of great interest due to their potential device applications and the underlying physics involved. In this study, we employ the first‐principles calculations to examine the FE control of electronic structures in 2D FE heterostructures, specifically In2Se3/h‐BN and CuInP2S6(CIPS)/h‐BN. Our results demonstrate that by reversing the polarization of the FE layers, the band alignment of the heterostructures can be interconverted between type−II and type−I. For In2Se3/h‐BN, the variation of out‐of‐plane polarization can be attributed to the hindrance and facilitation of charge transfer from h‐BN to In2Se3 by the intrinsic electric field of the In2Se3 monolayer. For CIPS/h‐BN heterostructures, the higher transferred charge in the Cdn configuration due to the presence of built‐in electric fields and the stronger interfacial interaction in the Cdn configuration results in a higher polarization value compared to the Cdn configuration. Moreover, the carrier mobility of the heterostructures can also be effectively modulated by the FE polarization. These findings highlight the potential significance of FE heterostructures with tunable band alignment and band gap in the development of nanoscale optoelectronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"20 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139797592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yutao Niu, Ting Xu, Kun Meng, Xiuhan Li, Yan Wei, Yannan Zhang, Xiaohua Yu, Ju Rong
{"title":"Data‐driven strategies for accelerated structural exploration of high‐performance two‐dimensional carbon‐based seawater desalination membranes","authors":"Yutao Niu, Ting Xu, Kun Meng, Xiuhan Li, Yan Wei, Yannan Zhang, Xiaohua Yu, Ju Rong","doi":"10.1002/pssr.202300403","DOIUrl":"https://doi.org/10.1002/pssr.202300403","url":null,"abstract":"The insufficiency of freshwater supplies has posed a serious threat to sustainable socio‐economic growth, and seawater desalination is considered to be the most promising solution to alleviate such pressure. Currently, two‐dimensional (2D) carbon membranes are identified as deserving candidates since their high permeability and multiple tunable properties. However, they remain challenging to systematically uncover the potential relationships between structures and properties in various 2D carbon materials. For this, we trained a machine learning (ML) model based on feature datasets of 2D carbon materials effecting desalination properties. The results suggest that structures with a maximum pore size of 10‐12 atoms and atomic densities between 0.28 and 0.41 are more likely to achieve high properties. We selected the Cml‐MOR based on MOR type mordenite zeolite for validation. Further, Cml‐MOR is demonstrated to feature remarkable salt ion adsorption. The effective water flux of Cml‐MOR is 113.51 L·cm‐2·day‐1·MPa‐1, and the salt rejection at 110 MPa could reach to 98.9%. This work is expected to apply this efficient method to investigate the structure and properties of 2D carbon membranes with great structural diversity; this will attract more people to focus on them and explore their important potential for practical applications.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"5 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139525963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vitomir Sever, Nicolas Bernier, Damien Térébénec, C. Sabbione, Jessy Paterson, F. Castioni, Patrick Quéméré, A. Jannaud, J. Rouviere, Hervé Roussel, J. Raty, Françoise Hippert, Pierre Noé
{"title":"Quantitative STEM HAADF Study of the Structure of pseudo‐2D Sb2Te3 films grown by (quasi) van der Waals Epitaxy","authors":"Vitomir Sever, Nicolas Bernier, Damien Térébénec, C. Sabbione, Jessy Paterson, F. Castioni, Patrick Quéméré, A. Jannaud, J. Rouviere, Hervé Roussel, J. Raty, Françoise Hippert, Pierre Noé","doi":"10.1002/pssr.202300402","DOIUrl":"https://doi.org/10.1002/pssr.202300402","url":null,"abstract":"Scanning Transmission Electron Microscopy (STEM) techniques are used to improve our understanding of out‐of‐plane oriented Sb2Te3 thin films deposited by sputtering on SiO2 and Si substrates. Nanobeam Precession Electron Diffraction (N‐PED), Energy‐Dispersive X‐ray spectroscopy (EDX) and High‐Angle Annular Dark‐Field (HAADF) imaging show that the presence of one to two atomic planes of Te on top of the substrate is a crucial factor for successful growth of such films, which can be achieved by optimizing co‐sputtering of Te and Sb2Te3 targets. The formation of an actual van der Waals (vdW) gap between the substrate and the first Sb2Te3 quintuple layer (QL) allows for vdW epitaxy. This gap is larger than those separating Te planes in the pseudo‐2D Sb2Te3 structure. HAADF image analysis provides detailed information on the atomic arrangement such as interplanar distances, vdW gaps and Debye Waller coefficients, all these with a few pm precision. For the anisotropic atomic displacements, a new methodology is introduced based on the statiscal analysis of atomic column positions that provides information on the low‐frequency phonon modes. Ab‐initio calculations are used to support our results. Overall, this study provides quantitative STEM tools particularly well suited for non periodic pseudo‐2D materials, such as Sb2Te3/GeTe super‐lattices.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"7 16","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139526113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kai-Yue Jiang, Yu-Lin Han, Mei-Yan Ni, Hong-Yan Lu
{"title":"Prediction of High‐Temperature Superconductivity in Monolayer h‐AlH2$left(text{AlH}right)_{2}$ at Ambient Pressure","authors":"Kai-Yue Jiang, Yu-Lin Han, Mei-Yan Ni, Hong-Yan Lu","doi":"10.1002/pssr.202300417","DOIUrl":"https://doi.org/10.1002/pssr.202300417","url":null,"abstract":"Although hydrides such as have been experimentally confirmed to possess high superconducting critical temperature () of 250‐260 K under 170‐200 GPa, it is still a tough challenge to be applied. It is highly anticipated to find hydride superconductors with relatively high at low or ambient pressure. Reducing the dimensionality of materials can induce unexpected properties that are distinct from their bulk counterparts, whether it can modulate the superconducting properties deserves further investigation. Here, we theoretically predict a new two‐dimensional (2D) monolayer aluminum hydride h‐ under ambient pressure based on the first‐principles calculations. Since the electronic structures of h‐ reveal the metallicity, the electron‐phonon coupling (EPC) and possible phonon‐mediated superconductivity have been investigated. Based on the isotropic Eliashberg equation, the calculated EPC constant λ of h‐ is 1.16, and the is up to 42.6 K. The EPC mainly originates from the coupling between electrons of Al‐s,,, and H‐s orbitals and the in‐plane vibration modes of H atoms. Especially, the can be enhanced to 63.7 K by applying 3% biaxial tensile strain. Thus, the predicted h‐ provides a new platform for finding hydride superconductors in low‐dimensional materials at ambient pressure.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"3 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139380393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Keyun Gu, Zilong Zhang, K. Tang, Jian Huang, Yue Shen, Haitao Ye, Linjun Wang
{"title":"Enhanced performance of solar‐blind UV photodetector based on β‐Ga2O3 nanowires grown by a magnetron sputtering","authors":"Keyun Gu, Zilong Zhang, K. Tang, Jian Huang, Yue Shen, Haitao Ye, Linjun Wang","doi":"10.1002/pssr.202300291","DOIUrl":"https://doi.org/10.1002/pssr.202300291","url":null,"abstract":"The development of the fabrication methods with a simple process and high controllability for the β‐Ga2O3, especially for the nanowires structure, has been a challenge. The slanted Ga2O3 nanowires are favorable for increasing the optical contact area and improving photon flux through nanoparticle scattering, leading to an increase in the photogenerated carrier yield. In this work, obliquely oriented and uniformly distributed β‐Ga2O3 nanowires were fabricated on Si substrates by RF magnetron sputtering using the strategy of Au nanoparticles as an intermediate catalyst. By depositing Ti and Au electrodes, we created the metal‐semiconductor‐metal (MSM) Ga2O3‐based photodetectors with a simple structure. Remarkably, the photodetector based on the β‐Ga2O3 nanowires outperformed the one based on the β‐Ga2O3 film, demonstrating higher responsivity and an exceptional photo‐current to dark‐current ratio (I\u0000photo\u0000\u0000/I\u0000dark\u0000) of 1.43×104 @5 V. This work presents a promising approach to enhance the utilization of incident light and maximize the generation of photo‐induced carriers in the Ga2O3‐based photodetectors.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"52 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138950133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}