Yi Chen, Cong Liu, Ruixue Sun, Guojie Yin, MR. Manikandan, Yifan Lv, Jingyu Shi, Hao Yu, Rui Liu, Yanchun Hu, Shaoqian Yin, X. W. Wang
{"title":"Electrochemical Performance of NiCo‐MOF‐Derived NiO@NiCo <sub>2</sub> O <sub>4</sub> Nanocomposite Electrode Materials for Supercapacitors","authors":"Yi Chen, Cong Liu, Ruixue Sun, Guojie Yin, MR. Manikandan, Yifan Lv, Jingyu Shi, Hao Yu, Rui Liu, Yanchun Hu, Shaoqian Yin, X. W. Wang","doi":"10.1002/pssr.202500412","DOIUrl":"https://doi.org/10.1002/pssr.202500412","url":null,"abstract":"In this study, we investigate the effect of varying tannic acid (TA) concentrations on the electrochemicalperformance of NiCo‐MOF‐derived nanocomposite electrode materials. The TA@NiO@NiCo 2 O 4 nanocomposites were synthesized using a straightforward metal–organic framework (MOF) templating strategy, which involved a simple hydrothermal method followed by a two‐step annealing process. Electrochemical characterization reveals that the resulting nanocomposites exhibit excellent cycling stability. Among them, the sample treated with 0.02 mol L −1 TA achieves the highest specific capacitance, reaching 773 F g −1 at a current density of 1 A g −1 . Furthermore, the nanocomposites display reduced electrical impedance, with the 0.02 mol L −1 TA sample recording a series resistance (Rs) as low as 0.60 Ω. After 5000 galvanostatic charge–discharge cycles, the capacity retention of samples treated with TA concentrations of 0, 0.01, and 0.02 mol L −1 all exceed 100%, indicating remarkable electrochemical durability.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2025-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147333480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wei Jiang, Jiangbei Wan, Rui Fang, Yingyu Chen, C.Z. Zhang, Lu Chen, Sixiang Cai, Changhong Wang, Zhen Wang
{"title":"Tristate Electrochromic Device Enabling Transparent–Black–Yellow Switching via Metal/Nonmetal Synergistic Deposition","authors":"Wei Jiang, Jiangbei Wan, Rui Fang, Yingyu Chen, C.Z. Zhang, Lu Chen, Sixiang Cai, Changhong Wang, Zhen Wang","doi":"10.1002/pssr.202500427","DOIUrl":"https://doi.org/10.1002/pssr.202500427","url":null,"abstract":"Reversible metal electrodeposition has attracted extensive attention for its ability to achieve color–neutral switching between transparent and black states; however, its color expression remains relatively limited, making it difficult to meet the demand for versatile color modulation. This work proposes a hybrid deposition strategy that combines metal and nonmetal redox processes in a single electrochromic device. The metal component involves codeposition of Cu 2+ and Bi 3+ ions for high‐contrast black‐state formation, while the nonmetal component utilizes reversible Br − /Br 3 − conversion. Br 3 − is further stabilized via complexation with 1‐methyl‐3‐propylimidazolium ion (MPI + ) to form yellow MPIBr 3 , enabling a transparent‐to‐yellow transition. These two processes are synergistically driven and precisely controlled by applied voltages, allowing reversible switching among transparent, black, and yellow within a single device. The device exhibits a high optical modulation of up to 60.8% in the yellow state, and the transmittance can be modulated below 1% in the black state, demonstrating excellent color neutrality and privacy protection. Moreover, after 24 h of resting, the transmittance increases by only 1.3%, indicating outstanding open‐circuit stability. This multicolor dynamic switching capability not only fulfills the functional requirements of smart windows for privacy and light regulation but also offers enriched color expression of aesthetic value.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2025-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147896785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hanguang Gou, Ding Huang, Qian Zhang, Xiaolong Liang, Weien Lai
{"title":"Multiwavelength Light‐Driven Broadband Terahertz Modulation Based on Manganese Oxide Nanoparticles","authors":"Hanguang Gou, Ding Huang, Qian Zhang, Xiaolong Liang, Weien Lai","doi":"10.1002/pssr.202500420","DOIUrl":"https://doi.org/10.1002/pssr.202500420","url":null,"abstract":"In the era of artificial intelligence‐driven information explosion, hybrid terahertz (THz) optical systems can play a pivotal role in multiple dimensional information transmission, which relies on high‐performance THz modulators capable of multiwavelength optical excitation. Here, we present a multiwavelength light‐driven broadband THz modulator based on manganese oxide nanoparticles (MnO NPs), exhibiting excellent broadband modulation within the frequency range of 0.1–1.6 THz and large modulation depth under different wavelength laser illumination at proper powers. The experimental results demonstrate that the THz modulator based on MnO NPs possesses superior compatibility and applicability compared with the traditional THz modulators. Based on the forward light scattering enhancement effect of the nanoparticles, the MnO NPs can effectively achieve light absorption enhancement at the interface between the nanoparticles and the silicon substrate, thereby significantly increasing the surface photoconductivity at the interface under optical excitation. Furthermore, the experimental results were effectively evaluated through numerical simulations within the framework of Drude model. Our work provides a compact and efficient solution for developing high‐performance broadband THz modulators with large modulation depth and multiwavelength optical excitation, demonstrating the great potentials for advancing the next generation hybrid integrated THz optical systems.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/pssr.202500420","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147916312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Liye Yang, Shuai Sun, Liangyu Zhang, Muhammad Irfan, Mengpei Zhang, Paul K. Chu, Jiao Yang, Jia Li
{"title":"Near‐Infrared Organic Phototransistors Based on Thermally Evaporated Planar Heterojunctions","authors":"Liye Yang, Shuai Sun, Liangyu Zhang, Muhammad Irfan, Mengpei Zhang, Paul K. Chu, Jiao Yang, Jia Li","doi":"10.1002/pssr.202500110","DOIUrl":"https://doi.org/10.1002/pssr.202500110","url":null,"abstract":"Heterostructures are widely used in organic phototransistors (OPTs) to balance carrier dynamics, including exciton dissociation, transport, and recombination inhibition. Planar heterojunctions (PHJs) offer direct pathways and fewer recombination sites for photo‐induced carriers. However, PHJ‐based OPTs' performance remains unsatisfactory due to challenges in achieving high‐quality organic planar interfaces with uniformity, large area, low roughness, and low defect density. Herein, a PHJ structure is designed for near‐infrared (NIR) photodetection. The PHJ consists of a polymer semiconductor, PDPPBTT, and a fullerene derivative, PC 61 BM. The PDPPBTT acts as the NIR photoactive layer, electron donor, and channel, while PC 61 BM is the acceptor. A simple evaporation technique is developed to deposit the PC 61 BM film on PDPPBTT to form a stable and uniform planar interface. Owing to the balanced dynamic characteristics, highly sensitive NIR photodetection is achieved as demonstrated by peak photosensitivity of 2.59 × 10 4 , photoresponsivity of 1.42 × 10 5 A W −1 , detectivity of 1.83 × 10 16 Jones upon weak irradiation of 0.072 μW cm −2 . To confirm the practicality of NIR imaging, a 7 × 7 array device is demonstrated. The results reveal a simple and effective strategy to prepare high‐performance PHJ‐based OPTs and provide insights into the development of advanced photodetection and imaging systems.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"19 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/pssr.202500110","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147917557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuyang Li, Hui Liu, Li Ding, Deren Yang, Yanjun Fang
{"title":"Suppression of Defect Formation in CsPbBr <sub>3</sub> Nanocrystals via Stoichiometry Regulation for Sensitive and Stable Nanocomposite X–Ray Detectors","authors":"Yuyang Li, Hui Liu, Li Ding, Deren Yang, Yanjun Fang","doi":"10.1002/pssr.202500112","DOIUrl":"https://doi.org/10.1002/pssr.202500112","url":null,"abstract":"Perovskite nanocrystals (PNCs) have emerged as promising candidates for X‐ray detection due to their large X‐ray stopping power and their presynthesized crystalline nature, which enables high‐quality thick‐film deposition via a scalable spray coating process. However, the inherent high defect density at the surface of PNCs significantly hampers the charge collection efficiency and overall stability of X‐ray detectors. In this study, the Cs/Pb precursor ratio is identified as a critical factor in mitigating defect formation in CsPbBr 3 PNCs. By introducing a moderate Cs‐deficient stoichiometry, both defect density and self‐doping within the PNCs are effectively reduced. Additionally, PNCs are incorporated into organic bulk‐heterojunctions to fabricate nanocomposite X‐ray detectors, showing that this stoichiometry regulation not only enhances the detectors’ sensitivity but also decreases the dark current and significantly improves their environmental stability. These advancements hold substantial potential for high‐performance flat‐panel X‐ray imaging applications in the future.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"19 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147333898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"W<sub><i>x</i></sub>Mo<sub>1‐<i>x</i></sub>O<sub>2</sub> Nanocrystals Synthesized by WSe<sub>2</sub>‐Assisted Chemical Vapor Deposition Method","authors":"Yuedong Wang, Jindong Bai, Zhiyi Liu, Xiao Guo, Fangyan Ang, Yu Huang, Haipeng Xie, Han Huang","doi":"10.1002/pssr.202400407","DOIUrl":"https://doi.org/10.1002/pssr.202400407","url":null,"abstract":"Transition metal oxide alloys, with tunable stoichiometric ratio, have garnered significant attention due to their unique electronic structure and diverse chemical properties. However, synthesis of micron‐scale, single‐crystalline transition metal oxide alloys remains a challenge due to their unique alloy structure and stringent synthesis conditions. Herein, a WSe 2 ‐assisted chemical vapor deposition method is reported for synthesizing W x Mo 1‐ x O 2 nanocrystals with various dimensions: nanorods, nanoplates, and nanodots. The microscopic (optical microscope, atomic force microscope, and scanning electron microscope) images reveal that the nanocrystals have well‐defined non‐layered polyhedral structures. The elemental composition is confirmed by Raman spectroscopy and energy dispersion spectroscopy. The change in phonon symmetry in nanorods and the blue shift of Raman peaks in nanocrystals demonstrate the significant role of the quantum confinement effect. The spatial distribution of the various dimensional nanocrystals provides insights into the possible growth mechanism and the key role of the WSe 2 in growth. The WSe 2 ‐assisted growth strategy for alloyed nanocrystals can expand the transition metal oxide alloy material library and offer a platform for exploring additional properties of transition metal oxide alloys.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"19 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2025-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147916440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yang Yu, Zhonglong Zhang, Qiuchun Lu, Jiaqi Tang, Wenqiang Wu, Xun Han
{"title":"Epitaxial Growth of Cs<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub> Single‐Crystal Arrays for UV‐Responsive Neuromorphic Devices","authors":"Yang Yu, Zhonglong Zhang, Qiuchun Lu, Jiaqi Tang, Wenqiang Wu, Xun Han","doi":"10.1002/pssr.202400200","DOIUrl":"https://doi.org/10.1002/pssr.202400200","url":null,"abstract":"Copper‐based halides, a type of perovskite derivative, inherit their excellent optoelectronic properties and solution processability and also have the advantages of being nontoxic and stable. Despite the tremendous achievements of microfabrication in conventional halide perovskites, reports on copper‐based halide array devices are rare due to their difficult high‐quality crystallization. Here, by introducing single‐crystal thin films grown by space confinement method as substrates, reliable photolithography based on their single crystals is successfully achieved and controllable homoepitaxial single‐crystal arrays is demonstrated. By adjusting the substrate, angle, and growth time, the orientation, arrangement, and size of arrays could be controlled. Temperature and time are used to regulate the growth stage to obtain clean and appropriately sized arrays. ITO/Cs 3 Cu 2 I 5 /ITO neuromorphic device based on homoepitaxial arrays is developed. The variation of synaptic plasticity could be controlled by the number and frequency of light pulses. The device successfully simulated the process of “learning, forgetting, and relearning” in the human brain, demonstrating the potential of application in sensing‐storage‐computing‐integrated devices.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"18 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/pssr.202400200","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147904047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Chatterjee, S. Sahu, Binit Mallick, Umang Singh, S. Bhunia, R. Sarkar, Dipankar Saha, A. Laha
{"title":"InGaN/GaN Hybrid‐Nanostructure Light Emitting Diodes with Emission Wavelength Green and Beyond","authors":"S. Chatterjee, S. Sahu, Binit Mallick, Umang Singh, S. Bhunia, R. Sarkar, Dipankar Saha, A. Laha","doi":"10.1002/pssr.202400147","DOIUrl":"https://doi.org/10.1002/pssr.202400147","url":null,"abstract":"Three sets of InGaN/GaN nanowire (NW) heterostructures are grown on Si(111) substrates under different growth conditions. A quasi‐two‐dimensional p‐GaN layer is grown on top of those structures using the epitaxial lateral overgrowth (ELOG) technique. Finally, the light‐emitting diodes (LED) are fabricated using these hybrid nanostructures following standard fabrication techniques. Electroluminescence (EL) measurement confirmed the emission wavelengths of 530.0 nm (green), 608.3 nm (orange), and 632.5 nm (red). The knee voltages of the devices are estimated to be in the range of 2.18–2.89 V, with higher knee voltages for samples emitting lower wavelengths. Further analysis of forward bias electrical characteristics suggests the dominance of tunneling current and an increase in the defect density in the heterostructures emitting higher wavelengths.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"34 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141643682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electronic, transport and optical properties of potential transparent conductive material Rb2Pb2O3","authors":"Jing-Yi Xia, Wei Zeng, Zheng-Tang Liu, Qi-Jun Liu, Juan Gao, Zhen Jiao","doi":"10.1002/pssr.202400135","DOIUrl":"https://doi.org/10.1002/pssr.202400135","url":null,"abstract":"To better verify the potential of Rb2Pb2O3 as p‐type transparent conductive oxides (TCOs), the structural, electronic, mechanical, transport and optical properties of Rb2Pb2O3 were calculated in detail under the framework of density functional theory (DFT). Significantly, Rb2Pb2O3 is a p‐type semiconductor with an indirect 2.82 eV bandgap. Here, the Pb‐6p and O‐2p orbits hybridized to form ionic Pb‐O bonds, which determines the degree of localization of electrons in valence band maximum. Interestingly, Rb‐O bond is extremely weak, and the Rb atom is rarely involved in bonding interactions. This contributes to isotropy, ductility and good mobility of Rb2Pb2O3, making it soft and suitable for application in flexible electronics. More importantly, as a transparent conductive material, Rb2Pb2O3 not only shows good transparency in the visible region, but also has good electrical conductivity. Therefore, we preliminarily identified Rb2Pb2O3 as an intrinsic p‐TCO with good performances. Our theoretical finding provides a new candidate for p‐TCOs and paves a way for further performance improvement of Rb2Pb2O3.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"5 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141337005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xijian Zhang, Jidong Jin, Jaekyun Kim, Claudio Balocco, Jiawei Zhang, Aimin Song
{"title":"TiO2‐Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories","authors":"Xijian Zhang, Jidong Jin, Jaekyun Kim, Claudio Balocco, Jiawei Zhang, Aimin Song","doi":"10.1002/pssr.202400156","DOIUrl":"https://doi.org/10.1002/pssr.202400156","url":null,"abstract":"This study presents TiO2‐based Schottky diodes designed as bidirectional switches for bipolar resistive memories. The TiO2 films in these Schottky diodes are prepared through an anodization process. The reverse current of these diodes exhibits an exponential increase with rising reverse voltage, ultimately matching the forward current. When two diodes are connected back‐to‐back, they demonstrate superior current‐voltage symmetry and provide a wider off‐state voltage range compared to a single diode, reaching up to 3.65 V. The adjustable off‐state voltage range (0.40 V to 3.65 V) of the switch, whether utilizing two diodes or a single diode, correlates well with the TiO2 layer thickness and oxygen partial pressure during Pt electrode sputtering. These diodes possess bidirectional switching characteristics and can serve as effective switch elements to address the sneak‐path issue in bipolar resistive memories.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"9 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141336472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}