physica status solidi (RRL) – Rapid Research Letters最新文献_第3页

Charge carrier transport mechanism through different oxides for (n) poly‐Si/SiOx fired passivating contacts (n) 聚硅/氧化硅烧结钝化触点电荷载流子通过不同氧化物的传输机制

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2024-05-21 DOI: 10.1002/pssr.202400099

Tobias Okker, R. Glatthaar, S. Seren, Giso Hahn, Barbara Terheiden

{"title":"Charge carrier transport mechanism through different oxides for (n) poly‐Si/SiOx fired passivating contacts","authors":"Tobias Okker, R. Glatthaar, S. Seren, Giso Hahn, Barbara Terheiden","doi":"10.1002/pssr.202400099","DOIUrl":"https://doi.org/10.1002/pssr.202400099","url":null,"abstract":"In recent years the mechanism of carrier transport through a junction of polycrystalline silicon (poly‐Si) on an interface oxide has been extensively discussed for passivating contacts of crystalline silicon‐based solar cells fabricated along the well‐established high temperature route. In the fired passivating contact (FPC) approach, no extended crystallization is foreseen which also modifies the properties of the junction. Here, we investigate atmospheric pressure chemical vapor deposited (APCVD), phosphorus‐doped (n) poly‐Si, which is annealed at different temperatures and durations following the FPC approach. Symmetric lifetime samples show the passivation potential of the FPC approach with implied open circuit voltages (iVOC) values of up to 736 mV. Temperature‐dependent specific contact resistivity measurements applying the transfer length method on differently grown interface oxides are used to identify tunneling or pinhole transport, or a combination of both. It is found that a transition from tunneling to pinhole transport surprisingly takes place already for annealing durations of a few seconds and is primarily impacted by annealing temperature instead of duration. Pinhole magnification studies via tetramethylammonium etching and scanning electron microscopy confirm the existence of pinholes in the interfacial oxides.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"141 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141114639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stability of Vanadium Doped Transition Metal Dichalcogenides under Etching Atmosphere 掺钒过渡金属二卤化物在蚀刻气氛下的稳定性

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2024-05-19 DOI: 10.1002/pssr.202400128

Sunwen Zhao, R. Xiao, Yuhan Feng, Chuang Tian, Jiawen Liu, Guanghui Yu

{"title":"Stability of Vanadium Doped Transition Metal Dichalcogenides under Etching Atmosphere","authors":"Sunwen Zhao, R. Xiao, Yuhan Feng, Chuang Tian, Jiawen Liu, Guanghui Yu","doi":"10.1002/pssr.202400128","DOIUrl":"https://doi.org/10.1002/pssr.202400128","url":null,"abstract":"Two‐dimensional (2D) transition metal dichalcogenides (TMDs) have attracted intensive interests for its unique electronic, optical, and thermal properties. Doping is necessary to expand the application. However, the stability of doped materials has been overlooked. This study focuses on the stability of monolayer‐doped MoS2 with different vanadium (V) concentrations. It provides a quantitative assessment of the etching results. Findings indicate that the stability of MoS2 under different etching atmospheres follows the series of lightly doped MoS2 (LD), pristine MoS2 (PR), moderately doped MoS2 (MD), and highly doped MoS2 (HD). Our research indicates that the stability of the material is linked to the bonding energy of cations and anions, as well as the amount of lattice distortion, which competes with one another. Low levels of V doping do not lead to significant lattice distortion, and the binding energy between sulfur (S) and V surpasses that of molybdenum (Mo), which is the primary factor. Excessive doping results in lattice distortion, which leads to a multitude of defects and a reduction in durability. This work is important for guiding the assessment of the reliability, the protection of degradation, and application scenarios of TMDs.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"119 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141124346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pulsed sputtering epitaxy of coherent AlN/Al0.5Ga0.5N/AlN multichannel structures 相干 AlN/Al0.5Ga0.5N/AlN 多通道结构的脉冲溅射外延

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2024-05-16 DOI: 10.1002/pssr.202400142

Takao Kozaka, Ryota Maeda, Kohei Ueno, Hiroshi Fujioka

引用次数: 0

Mechanically and Electrically Stable Hybrid Aerogels as Free‐Standing Anodes for High‐Capacity Lithium‐Ion Battery 作为高容量锂离子电池独立阳极的机械和电气稳定的混合气凝胶

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2024-05-15 DOI: 10.1002/pssr.202400118

Kyumin Park, Byeongho Park, Kanghoon Seo, Hyekyeong Jang, Myung Gwan Hahm, Youngseok Oh

{"title":"Mechanically and Electrically Stable Hybrid Aerogels as Free‐Standing Anodes for High‐Capacity Lithium‐Ion Battery","authors":"Kyumin Park, Byeongho Park, Kanghoon Seo, Hyekyeong Jang, Myung Gwan Hahm, Youngseok Oh","doi":"10.1002/pssr.202400118","DOIUrl":"https://doi.org/10.1002/pssr.202400118","url":null,"abstract":"Molybdenum disulfide (MoS2) is a promising alternative to graphite anodes in battery materials. Therefore, it is critical to scrutinize their structural stability and charge storage capacity during battery operation. In this study, freestanding electrodes consisting of MoS2‐incorporated carbon nanotube aerogels (MSCA) were fabricated using a simple yet scalable hydrothermal method, as used in lithium‐ion batteries. The outer nitrogen‐doped graphitic carbon (NGr) layers support efficient charge transport, even under a substantial compressive environment, and improve the structural integrity, showing significant improvements in battery performance, such as a high rate capacity of 820 mAh g−1 at the current density of 5 A g−1 and 94% capacity retention after 170 cycles (1170 mAh g−1 at 1 A g−1 after 170 cycles), even in the absence of polymer binders and conductive additives. The resulting NGr/MoS2/Single‐Walled Carbon Nanotubes (SWCNT) freestanding electrodes have great potential to increase the volumetric and gravimetric energy density of batteries.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"127 39","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140977486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Relatively Low Frequency Magnetic Field Detection System Using Metglas/PZT‐5B Sensor 使用 Metglas/PZT-5B 传感器的相对低频磁场探测系统

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2024-05-14 DOI: 10.1002/pssr.202400133

Zhihao Jiang, Xiaoxu Liu, Zhejun Jin, Zhao Yao, Yuheng Wang, Shipeng Zhang, Quanming Gao, Shandong Li

引用次数: 0

Stabilization of Morphotropic Phase Boundary in Hafnia Via Microwave Low‐temperature Crystallization Process for Next‐generation DRAM Technology 通过微波低温结晶工艺稳定哈夫尼亚中的各向异性相界，促进下一代 DRAM 技术的发展

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2024-05-13 DOI: 10.1002/pssr.202400108

Hunbeom Shin, Giuk Kim, Sujeong Lee, Hyojun Choi, Sangho Lee, Sangmok Lee, Yunseok Nam, Geonhyeong Kang, Hyungjun Kim, Jinho Ahn, Sanghun Jeon

{"title":"Stabilization of Morphotropic Phase Boundary in Hafnia Via Microwave Low‐temperature Crystallization Process for Next‐generation DRAM Technology","authors":"Hunbeom Shin, Giuk Kim, Sujeong Lee, Hyojun Choi, Sangho Lee, Sangmok Lee, Yunseok Nam, Geonhyeong Kang, Hyungjun Kim, Jinho Ahn, Sanghun Jeon","doi":"10.1002/pssr.202400108","DOIUrl":"https://doi.org/10.1002/pssr.202400108","url":null,"abstract":"The morphotropic phase boundary (MPB), which arises from the combination of antiferroelectric and ferroelectric phases, demonstrates the highest dielectric constant (κ) compared to other phases. This emphasizes its potential as a leading contender for dielectric films in future DRAM capacitors. MPB‐based high‐κ materials using hafnia have shown a trade‐off between equivalent oxide thickness (EOT) and leakage current density (Jleak) when the crystallization temperature increases with scaling the thickness. In this study, we employed a microwave annealing (MWA) method that can achieve low‐temperature crystallization below 350 °C. The purpose of this method is to mitigate the trade‐off relationships and achieve the strict criteria of current DRAM capacitors. These criteria include low EOT (less than 4 Å) and Jleak (less than 10‐7 A/cm2 at 0.8 V) characteristics. The MWA is capable of relatively low‐temperature annealing by supplying energy to the films through both thermal energy and dipole vibration energy. As a result, we achieved a record low EOT of 3.76 Å and a low leakage current characteristic of 4.2×10‐8 A/cm2 at 0.8 V concurrently. We are confident that our research can be important in addressing the challenges associated with reducing the size of next‐generation DRAM capacitors.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"97 25","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140984307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ferroelectric SrMnO3 Thin Film Grown on (110)‐Oriented PMN‐PT Substrate 在面向 (110) 的 PMN-PT 基质上生长的铁电性 SrMnO3 薄膜

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2024-04-24 DOI: 10.1002/pssr.202400025

Seong Min Park, Jaegyu Kim, G. Anoop, W. Seol, Su Yong Lee, Hyunjin Joh, Tae Yeon Kim, Jeonyong Choi, Seungbum Hong, Chan‐Ho Yang, Hyeon Jun Lee, J. Jo

{"title":"Ferroelectric SrMnO3 Thin Film Grown on (110)‐Oriented PMN‐PT Substrate","authors":"Seong Min Park, Jaegyu Kim, G. Anoop, W. Seol, Su Yong Lee, Hyunjin Joh, Tae Yeon Kim, Jeonyong Choi, Seungbum Hong, Chan‐Ho Yang, Hyeon Jun Lee, J. Jo","doi":"10.1002/pssr.202400025","DOIUrl":"https://doi.org/10.1002/pssr.202400025","url":null,"abstract":"\u0000Exploring the unique physical properties of oxide perovskites necessitates their growth on diverse single‐crystal substrates. The thin‐film growth of perovskite SrMnO3 (SMO) has been a particular focus of research due to its emerging room‐temperature multiferroicity. Herein, the epitaxial thin films of (110)‐oriented SMO are grown on the piezoelectric (110)‐oriented (1–x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 (PMN‐PT) substrate. The effects of the thickness and oxygen annealing on the crystal structure, stoichiometry, and ferroelectric properties of the SMO thin film are systematically investigated. The tensile strain produced by the lattice mismatch between the bulk SMO and the PMN‐PT substrate causes an expansion of the c‐lattice parallel to the in‐plane direction of the substrate. The films show larger a‐, b‐, and c‐lattice parameters than the bulk material, resulting in volume expansion of the unit cell. This lattice expansion is attributed to the generation of oxygen vacancies driven by the reduced formation energy caused by the high elastic strain. Piezoelectric force microscopy reveals that the SMO film contains domains with strain‐mediated in‐plane and vacancy‐mediated out‐of‐plane polarization. Furthermore, the piezoelectric response of the PMN‐PT substrate effectively modulates the biaxial tensile strain in the SMO film, offering a potential strategy for controlling the crystal structure and ferroelectric properties of SMO.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"50 18","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140662261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Position Selective Introduction of Ferromagnetism on the Micro‐ and Nanoscale in a Paramagnetic Thin Palladium Film 顺磁性钯薄膜在微米和纳米尺度上位置选择性地引入铁磁性

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2024-03-29 DOI: 10.1002/pssr.202400053

Petter Ström, C. Vantaraki, Rajdeep Kaur, T. Tran, G. Nagy, V. Kapaklis, Daniel Primetzhofer

{"title":"Position Selective Introduction of Ferromagnetism on the Micro‐ and Nanoscale in a Paramagnetic Thin Palladium Film","authors":"Petter Ström, C. Vantaraki, Rajdeep Kaur, T. Tran, G. Nagy, V. Kapaklis, Daniel Primetzhofer","doi":"10.1002/pssr.202400053","DOIUrl":"https://doi.org/10.1002/pssr.202400053","url":null,"abstract":"Post‐synthetic, position selective addition of properties to materials constitutes a paradigm shifting step in materials engineering. The approach enables creation of material systems inaccessible by equilibrium and near‐equilibrium synthesis, and can be applied in novel practical applications as well as fundamental physics studies over a range of length‐ and energy scales. Ion implantation is a versatile, scalable, industry‐compatible tool, enabling the next step in this development. Here, we employ ion implantation to design and functionalize a mesoscopic magnetic architecture. We utilize a self‐supporting mask combined with implantation of 60 keV Fe ions to create an embedded array of approximately 8 µm wide circular ferromagnetic regions in a Pd film. The approach is contactless, free from surface residues and requires no focusing or scanning of the beam. Magnetic properties of the array are probed with longitudinal magneto‐optic Kerr effect measurement while varying sample temperature and applied magnetic field. Microstructures are visualized with Kerr microscopy and compared to the Fe distribution measured with microbeam proton induced X‐ray emission. Sample topography after implantation is obtained by atomic force microscopy, while ion beam analysis is employed to probe concentration depth profiles of implanted Fe, impurities and to investigate material mixing.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"30 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140365658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tuning the band gap and topological phase transition in bilayer van der Waals stanane by electric field 通过电场调节双层范德瓦尔斯坦的带隙和拓扑相变

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2024-02-15 DOI: 10.1002/pssr.202300496

Yifei Zhao, Zhongyao Li

{"title":"Tuning the band gap and topological phase transition in bilayer van der Waals stanane by electric field","authors":"Yifei Zhao, Zhongyao Li","doi":"10.1002/pssr.202300496","DOIUrl":"https://doi.org/10.1002/pssr.202300496","url":null,"abstract":"For a very few special two‐dimensional (2D) materials, electric field can be used to realize the topological phase transition from normal insulator (NI) into topological insulator (TI). To design the low‐power electronic devices based on 2DTIs, tunable and practical 2DTIs may be necessary. Here, we proposed a model of electric‐field‐tunable 2DTIs based on bilayer van der Waals semiconductors. The bilayer semiconductors can be tuned by electric field from NIs into TIs. As a good candidate of the predicted 2DTIs, we studied the possible topological phase transition of bilayer stanane (SnH) under electric field by using first‐principles calculations. The calculations suggest bilayer stanane can be converted from NI into TI by vertical electric field. The topological band gap can be up to about 22.8meV, which is giant for the electric‐field‐tunable 2DTIs. It can be further enlarged by vertical pressure. This discovery provides new possibilities for converting NIs into TIs by electric field and creating multifunctional topological field‐effect transistors by tunable 2DTIs.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"10 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139774549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tuning the band gap and topological phase transition in bilayer van der Waals stanane by electric field 通过电场调节双层范德瓦尔斯坦的带隙和拓扑相变

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2024-02-15 DOI: 10.1002/pssr.202300496

Yifei Zhao, Zhongyao Li

{"title":"Tuning the band gap and topological phase transition in bilayer van der Waals stanane by electric field","authors":"Yifei Zhao, Zhongyao Li","doi":"10.1002/pssr.202300496","DOIUrl":"https://doi.org/10.1002/pssr.202300496","url":null,"abstract":"For a very few special two‐dimensional (2D) materials, electric field can be used to realize the topological phase transition from normal insulator (NI) into topological insulator (TI). To design the low‐power electronic devices based on 2DTIs, tunable and practical 2DTIs may be necessary. Here, we proposed a model of electric‐field‐tunable 2DTIs based on bilayer van der Waals semiconductors. The bilayer semiconductors can be tuned by electric field from NIs into TIs. As a good candidate of the predicted 2DTIs, we studied the possible topological phase transition of bilayer stanane (SnH) under electric field by using first‐principles calculations. The calculations suggest bilayer stanane can be converted from NI into TI by vertical electric field. The topological band gap can be up to about 22.8meV, which is giant for the electric‐field‐tunable 2DTIs. It can be further enlarged by vertical pressure. This discovery provides new possibilities for converting NIs into TIs by electric field and creating multifunctional topological field‐effect transistors by tunable 2DTIs.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"430 13","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139833906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0