Ferroelectric Control of Band Alignments in In2Se3/h‐BN and CuInP2S6/h‐BN Van der Waals Heterostructures

Abstract

Two‐dimensional ferroelectric (FE) heterostructures have recently become a subject of great interest due to their potential device applications and the underlying physics involved. In this study, we employ the first‐principles calculations to examine the FE control of electronic structures in 2D FE heterostructures, specifically In2Se3/h‐BN and CuInP2S6(CIPS)/h‐BN. Our results demonstrate that by reversing the polarization of the FE layers, the band alignment of the heterostructures can be interconverted between type−II and type−I. For In2Se3/h‐BN, the variation of out‐of‐plane polarization can be attributed to the hindrance and facilitation of charge transfer from h‐BN to In2Se3 by the intrinsic electric field of the In2Se3 monolayer. For CIPS/h‐BN heterostructures, the higher transferred charge in the Cdn configuration due to the presence of built‐in electric fields and the stronger interfacial interaction in the Cdn configuration results in a higher polarization value compared to the Cdn configuration. Moreover, the carrier mobility of the heterostructures can also be effectively modulated by the FE polarization. These findings highlight the potential significance of FE heterostructures with tunable band alignment and band gap in the development of nanoscale optoelectronic devices.This article is protected by copyright. All rights reserved.