TeO2: A prospective high‐k dielectric

Abstract

In this work, high‐k dielectric behaviour of TeO2 thin films is investigated. The films are prepared using pulsed laser deposition on ITO‐glass substrates. Increasing the growth temperature has improved the surface roughness, transparency and band gap of the films. Films grown at 500 °C display nanocrystalline nature which is reflected in the increase of band gap to 4.7 eV and is higher than the bulk value of α‐TeO2 (3.7 eV). The nanocrystalline TeO2 films in the metal‐insulator‐metal configuration showed a stable high permittivity of ∽19 with low leakage current (J < 1×10−7 A cm−2) and good voltage stability (α= 509 ppm V−2). Field effect modulation is observed in the metal‐oxide‐semiconductor stack configuration with tellurium as a semiconductor. The study suggests, nanocrystalline TeO2 as a low temperature processable high‐k material with high transparency for transistor applications.This article is protected by copyright. All rights reserved.