physica status solidi (RRL) – Rapid Research Letters最新文献_第5页

Locally reconfigurable exchange bias for tunable spintronics by pulsed current injection 脉冲电流注入可调谐自旋电子学的局部可重构交换偏置

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-08-29 DOI: 10.1002/pssr.202300303

Wenli Wang, Yicheng Chen, Bo Wang, Lisong Wang, Yongliang Han, W. Su, Zhongqiang Hu, Zhiguang Wang, Meilin Liu

引用次数: 0

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-08-29 DOI: 10.1002/pssr.202300277

N. S. Kurochkin, V. Sychev, A. V. Gritsienko, D. Bi

{"title":"Nickel‐related centers in HPHT microdiamonds for near‐infrared luminescent thermometry","authors":"N. S. Kurochkin, V. Sychev, A. V. Gritsienko, D. Bi","doi":"10.1002/pssr.202300277","DOIUrl":"https://doi.org/10.1002/pssr.202300277","url":null,"abstract":"Nano‐ and microcrystals of diamond are attractive for optical thermometry applications and possess unique optical properties as well as high chemical stability and biocompatibility. For biological application there are interest of diamonds with color centers that emit in the biological transparency window. One such defect is nickel‐related color centers that radiate in the near‐infrared range (1.4‐eV Ni centers), but have not yet been sufficiently investigated. This study reports the optical characteristics of HPHT diamond microcrystals with average sizes of 4 μm and 30 μm containing 1.4‐eV Ni centers. The temperature dependence of the spectral and temporal properties of Ni center emissions in the range from room temperature to 85 °C was demonstrated and thereby the possibility of appliance these centers as temperature sensors. The relative temperature sensitivities of luminescence peak intensity and lifetime for Ni centers were found to be 1.3% K−1 and 0.42% K−1, respectively. Moreover, the temperature determination accuracy reached better than 1 K.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"102 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83750034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Doping modification of Cs3Bi2I9 single crystals for high performance X‐ray detectors 用于高性能X射线探测器的Cs3Bi2I9单晶掺杂改性

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-08-25 DOI: 10.1002/pssr.202300306

Anfeng Li, Manman Yang, Aoxi He, Peng Tang, X. Hao, Lili Wu, Wenbo Tian, Dingyu Yang, Jingquan Zhang

{"title":"Doping modification of Cs3Bi2I9 single crystals for high performance X‐ray detectors","authors":"Anfeng Li, Manman Yang, Aoxi He, Peng Tang, X. Hao, Lili Wu, Wenbo Tian, Dingyu Yang, Jingquan Zhang","doi":"10.1002/pssr.202300306","DOIUrl":"https://doi.org/10.1002/pssr.202300306","url":null,"abstract":"Cs3Bi2I9 (CBI) is a promising material for direct X‐ray detectors. However, for the solution method, due to the difference in the chemical potential of Cs+, Bi3+, I‐ ions in the solvent, the composition of Cs3Bi2I9 single crystals (SC) prepared by the solution method often deviates from the stoichiometric ratio, resulting in the formation of many defects in the material, which degrades the quality of the SC. In this work, Br‐ and Cl‐ were used as dopants to produce CBI SCs by the top seed solution method. It can be speculated that the dopant ions could reduce the VI defects in the CBI by means of density functional theory (DFT) calculations. The carrier lifetimes of CBI SCs doped with Br‐ and Cl‐ have been increased to 41.7 ns and 13.0 ns, respectively. Meanwhile, the defect densities of the SCs were reduced to 1.02×109 cm‐3 and 1.85×109 cm‐3, respectively. X‐ray detectors based on Br‐doped CBI and Cl‐doped CBI SCs exhibited high X‐ray sensitivity of 23071.3 μC Gyair\u0000‐1cm‐2 and 18525.3 μC Gyair\u0000‐1cm‐2 at an electric field of 40 V mm‐1, respectively. In addition, the X‐ray detection limit reaches 1.07 nGyairs‐1 and 1.35 nGyairs‐1 at an electric field of 2.5 V mm‐1, respectively.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"41 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82401496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Visible to Short Wave Infrared Broadband p‐WSe2/n‐Ge Heterojunction Phototransistor with an Annular Shallow‐Trench Schottky Barrier Collector 短波红外可见宽带p - WSe2/n - Ge异质结光电晶体管与环形浅沟肖特基势垒集电极

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-08-25 DOI: 10.1002/pssr.202300276

Shuo Li, Xinwei Cai, Haokun Ding, Qiang Wu, Songsong Wu, Guangyang Lin, Wei Huang, Songyan Chen, Cheng Li

{"title":"Visible to Short Wave Infrared Broadband p‐WSe2/n‐Ge Heterojunction Phototransistor with an Annular Shallow‐Trench Schottky Barrier Collector","authors":"Shuo Li, Xinwei Cai, Haokun Ding, Qiang Wu, Songsong Wu, Guangyang Lin, Wei Huang, Songyan Chen, Cheng Li","doi":"10.1002/pssr.202300276","DOIUrl":"https://doi.org/10.1002/pssr.202300276","url":null,"abstract":"Van der Waals (vdW) heterostructures based on two‐dimensional materials and conventional group IV semiconductors have shown great potential for wide spectrum, highly sensitive photodetectors owing to their broadband absorption, high‐quality interface, and compatibility with complementary metal‐oxide‐semiconductor (CMOS) technology. Here, we propose a unique heterojunction phototransistor composed of an indium tin oxide (ITO) capped p‐WSe2/n‐Ge vdW heterojunction serving as the emitter and an annular shallow‐trench Al/Ge Schottky junction acting as the collector. The mixed‐dimensional phototransistor exhibiting high responsivities up to 66 A W‐1 at 405 nm and 124 A W‐1 at 1550 nm demonstrates a brilliant wide spectrum response performance. The high photocurrent gain can be attributed to the extra‐large carrier injection ratio of the heterojunction. The short transient response time in the order of 100 µs is achieved with the modified lateral electrical field by the annular shallow‐trench Schottky barrier collector. The combination of p‐WSe2/n‐Ge vdW heterojunction and the annular shallow‐trench Al/n‐Ge Schottky junction renders a low‐cost, high‐performance photodetector fabricated in a simple and CMOS compatible way for visible to short wave infrared (SWIR) broadband detection.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"147 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86771912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

In‐Plane Anisotropic Phonon‐Polaritonic Resonances with α‐MoO3 microdisks α - MoO3微盘的平面内各向异性声子极化共振

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-08-21 DOI: 10.1002/pssr.202300302

Hongjie Zhang, Xiang Li, Tong Qin, Lan Zhang, Wei Du, Peining Li, Tao Wang

引用次数: 0

Multi‐subband Polar Optical Phonon Scattering in InAlN/AlN/GaN Heterostructures InAlN/AlN/GaN异质结构中的多子带极性光学声子散射

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-08-13 DOI: 10.1002/pssr.202300238

Qun Li, Yao Li, Yachao Zhang, Jincheng Zhang

{"title":"Multi‐subband Polar Optical Phonon Scattering in InAlN/AlN/GaN Heterostructures","authors":"Qun Li, Yao Li, Yachao Zhang, Jincheng Zhang","doi":"10.1002/pssr.202300238","DOIUrl":"https://doi.org/10.1002/pssr.202300238","url":null,"abstract":"The high density of two‐dimensional electron gas (2DEG) in InAlN/AlN/GaN heterostructures results in significant occupation of higher subbands, it is thus imperative to consider multi‐subband occupation and inter‐subband scattering in the calculations of polar optical phonon (POP) scattering. The physical parameters, such as subband energies, wave functions of the four lowest subbands, and Fermi level of InAlN/AlN/GaN heterostructures, are calculated by solving the Schrödinger‐Poisson equations and applied to the multi‐subband POP scattering model. The dependence of mobility, which is limited by multi‐subband POP scattering, on temperature and 2DEG density is studied. The results show that multi‐subband occupation and inter‐subband scattering play important roles in electron transport. The higher subbands contribute 26% to room‐temperature electron mobility. Two simplified POP scattering models, which either ignore multi‐subband occupation or simplify the in‐scattering processes are evaluated. The results show that both simplified models introduce significant deviations in the mobilities that are limited by POP scattering. The relative magnitudes of mobility in each subband depend on the energy dependence of momentum relaxation time and the energy distribution of each subband.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"284 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77734082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Tunable Fano Resonator with High Sensitivity Based on Black Phosphorus in the Terahertz Band 一种基于太赫兹黑磷的高灵敏度可调谐法诺谐振器

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-08-08 DOI: 10.1002/pssr.202300207

Hao Zhang, Xue-shi Li, Weijun Sun, Yonghui Huang, Yuanmei Xu, K. Wen, Naixing Feng

引用次数: 0

Ge2Sb2Te5 thin film as a promising heat‐mode resist for high‐resolution direct laser writing lithography Ge2Sb2Te5薄膜作为一种有前途的热模抗蚀剂用于高分辨率直接激光书写光刻

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-08-05 DOI: 10.1002/pssr.202300262

Xingwang Chen, Lei Chen, Lihao Sun, Tao Wei, Yun Ling, Jing Hu, Miao Cheng, Qianqian Liu, Ruirui Wang, Wanfei Li, Bo Liu

引用次数: 0

Photoresponsivity Enhancement of Monolayer MoS2 by Silicon Quantum Dots 硅量子点增强MoS2单层的光响应性

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-08-03 DOI: 10.1002/pssr.202300220

Minseon Gu, Keun Wook Lee, Beomjin Park, Beom Soo Joo, Young Jun Chang, Dong-Wook Park, Moonsup Han

{"title":"Photoresponsivity Enhancement of Monolayer MoS2 by Silicon Quantum Dots","authors":"Minseon Gu, Keun Wook Lee, Beomjin Park, Beom Soo Joo, Young Jun Chang, Dong-Wook Park, Moonsup Han","doi":"10.1002/pssr.202300220","DOIUrl":"https://doi.org/10.1002/pssr.202300220","url":null,"abstract":"Hybrid 2D/0D structures with various 2D materials and 0D quantum dots (QDs) have been studied to overcome the limitations of 2D materials. In this work, a hybrid structure with MoS2 and silicon quantum dots (Si QDs) as a photodetector is developed. The I–V transfer characteristics show a threshold voltage shift after decorating Si QDs on MoS2, which results from an n‐type doping effect to the MoS2 channel from the Si QDs. The field‐effect mobility of the MoS2/Si QDs device is increased by ≈5.8 times compared with that of the bare MoS2 device. It is understood that the mobility enhancement is attributed to the surface defect passivation of MoS2 at the interface with Si QDs. It is observed that the photoresponsivity of the MoS2/Si QDs structure is improved by ≈7.7 times compared with that of the bare MoS2 device under 500 nm illumination. Additionally, it is observed that the photoluminescence (PL) intensity of MoS2 is increased about 4.5 times after decoration of Si QDs. The band alignment as type I at the interface between the Si QDs and MoS2 is interpreted. The mobility enhancement and the photoexcited charge transfer (CT) between the MoS2 and the Si QDs due to the illumination lead to enhancing the photoresponsivity of the MoS2/Si QDs hybrid structure.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81764581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Anisotropic optical properties of monolayer aligned single‐walled carbon nanotubes 单层排列单壁碳纳米管的各向异性光学特性

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-08-02 DOI: 10.1002/pssr.202300199

G. Ermolaev, Ying Xie, Liu Qian, Mikhail K. Tatmyshevskiy, A. Slavich, Aleksey Arsenin, Jin Zhang, V. Volkov, A. Chernov

{"title":"Anisotropic optical properties of monolayer aligned single‐walled carbon nanotubes","authors":"G. Ermolaev, Ying Xie, Liu Qian, Mikhail K. Tatmyshevskiy, A. Slavich, Aleksey Arsenin, Jin Zhang, V. Volkov, A. Chernov","doi":"10.1002/pssr.202300199","DOIUrl":"https://doi.org/10.1002/pssr.202300199","url":null,"abstract":"Two‐dimensional materials are the fundamental building blocks for modern optoelectronics and photonics. Optically anisotropic monolayers give even more flexibility in device design and performance. However, the random orientation of optical axes in the large‐scale samples prevents anisotropic monolayers from widespread use. The alternative structure is a monolayer of aligned single‐walled carbon nanotubes (SWCNTs) with an anisotropic dielectric tensor. Here, we measure aligned SWCNTs monolayer anisotropic optical constants in a broad spectral range (250 – 1700 nm) for the first time. We discovered that it has a large birefringence of Δn ∽ 0.2 and a high dichroism of Δk ∽ 0.4. Moreover, we demonstrated that aligned SWCNTs monolayer optical response could be described by an effective medium approximation using the graphene dielectric function. Besides, it gives a universal approach for a determination of carbon concentration in nanotubes structures. It also applies for other types of carbon nanotubes, such as multi‐walled and randomly oriented carbon nanotubes arrays. Hence, our results add aligned SWCNTs monolayer optical constants to the optical anisotropy database, which facilitates the longstanding challenge of using one‐dimensional structures in two dimensions, and provide a rapid characterization method for carbon nanotubes.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89739992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0