physica status solidi (RRL) – Rapid Research Letters最新文献

{"title":"Visible to Short Wave Infrared Broadband p‐WSe2/n‐Ge Heterojunction Phototransistor with an Annular Shallow‐Trench Schottky Barrier Collector","authors":"Shuo Li, Xinwei Cai, Haokun Ding, Qiang Wu, Songsong Wu, Guangyang Lin, Wei Huang, Songyan Chen, Cheng Li","doi":"10.1002/pssr.202300276","DOIUrl":"https://doi.org/10.1002/pssr.202300276","url":null,"abstract":"Van der Waals (vdW) heterostructures based on two‐dimensional materials and conventional group IV semiconductors have shown great potential for wide spectrum, highly sensitive photodetectors owing to their broadband absorption, high‐quality interface, and compatibility with complementary metal‐oxide‐semiconductor (CMOS) technology. Here, we propose a unique heterojunction phototransistor composed of an indium tin oxide (ITO) capped p‐WSe2/n‐Ge vdW heterojunction serving as the emitter and an annular shallow‐trench Al/Ge Schottky junction acting as the collector. The mixed‐dimensional phototransistor exhibiting high responsivities up to 66 A W‐1 at 405 nm and 124 A W‐1 at 1550 nm demonstrates a brilliant wide spectrum response performance. The high photocurrent gain can be attributed to the extra‐large carrier injection ratio of the heterojunction. The short transient response time in the order of 100 µs is achieved with the modified lateral electrical field by the annular shallow‐trench Schottky barrier collector. The combination of p‐WSe2/n‐Ge vdW heterojunction and the annular shallow‐trench Al/n‐Ge Schottky junction renders a low‐cost, high‐performance photodetector fabricated in a simple and CMOS compatible way for visible to short wave infrared (SWIR) broadband detection.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"147 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86771912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In‐Plane Anisotropic Phonon‐Polaritonic Resonances with α‐MoO3 microdisks","authors":"Hongjie Zhang, Xiang Li, Tong Qin, Lan Zhang, Wei Du, Peining Li, Tao Wang","doi":"10.1002/pssr.202300302","DOIUrl":"https://doi.org/10.1002/pssr.202300302","url":null,"abstract":"Phonon polaritons (PhPs) in two‐dimensional van der Waals (vdW) crystals exhibit strong spatial confinement and long polariton lifetimes, making them promising for developing novel nanophotonic devices at mid‐infrared frequencies. Here, using α‐phase molybdenum trioxide (α‐MoO3) microdisks, we have demonstrated in‐plane anisotropic PhP resonances with degree of polarization (DoP) of almost 100% from far field observation. Such in‐plane polarization‐dependent PhP resonances, originating from the anisotropic crystal structure of α‐MoO3, are readily tuned by the disk length and fits well to numerical simulations. Our findings show new possibility for engineering in‐plane polarizers based on vdW crystals and may promote the development of functional polarization‐sensitive optoelectronic devices at mid‐infrared frequencies.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"152 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86220891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi‐subband Polar Optical Phonon Scattering in InAlN/AlN/GaN Heterostructures","authors":"Qun Li, Yao Li, Yachao Zhang, Jincheng Zhang","doi":"10.1002/pssr.202300238","DOIUrl":"https://doi.org/10.1002/pssr.202300238","url":null,"abstract":"The high density of two‐dimensional electron gas (2DEG) in InAlN/AlN/GaN heterostructures results in significant occupation of higher subbands, it is thus imperative to consider multi‐subband occupation and inter‐subband scattering in the calculations of polar optical phonon (POP) scattering. The physical parameters, such as subband energies, wave functions of the four lowest subbands, and Fermi level of InAlN/AlN/GaN heterostructures, are calculated by solving the Schrödinger‐Poisson equations and applied to the multi‐subband POP scattering model. The dependence of mobility, which is limited by multi‐subband POP scattering, on temperature and 2DEG density is studied. The results show that multi‐subband occupation and inter‐subband scattering play important roles in electron transport. The higher subbands contribute 26% to room‐temperature electron mobility. Two simplified POP scattering models, which either ignore multi‐subband occupation or simplify the in‐scattering processes are evaluated. The results show that both simplified models introduce significant deviations in the mobilities that are limited by POP scattering. The relative magnitudes of mobility in each subband depend on the energy dependence of momentum relaxation time and the energy distribution of each subband.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"284 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77734082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Tunable Fano Resonator with High Sensitivity Based on Black Phosphorus in the Terahertz Band","authors":"Hao Zhang, Xue-shi Li, Weijun Sun, Yonghui Huang, Yuanmei Xu, K. Wen, Naixing Feng","doi":"10.1002/pssr.202300207","DOIUrl":"https://doi.org/10.1002/pssr.202300207","url":null,"abstract":"A Fano resonator using black phosphorus, capable of tuning the operating band while possessing high sensitivity, is proposed. A ring and a groove are respectively etched above and below the main channel to produce the Fano resonance, resulting in a highly sensitive Fano resonator. Such a sensor can capture slight changes in the surrounding environment. Moreover, adding black phosphorus into the ring above the channel and into the groove below the channel, the electron doping of black phosphorus can be altered to adjust the resonant frequency of the Fano resonator. The shiftable frequency of the Fano resonator designed herein can reach 57 GHz at the second‐order resonance around 1.895 THz, an ability highly attractive in fields that require high sensitivity and adjustability. It is essential in the area of integrated electronics, offers fresh perspectives for innovations in integrated electronic gadgets, and paves the way for flexible terahertz systems.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"66 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80953399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ge2Sb2Te5 thin film as a promising heat‐mode resist for high‐resolution direct laser writing lithography","authors":"Xingwang Chen, Lei Chen, Lihao Sun, Tao Wei, Yun Ling, Jing Hu, Miao Cheng, Qianqian Liu, Ruirui Wang, Wanfei Li, Bo Liu","doi":"10.1002/pssr.202300262","DOIUrl":"https://doi.org/10.1002/pssr.202300262","url":null,"abstract":"Ge2Sb2Te5 thin film is investigated as a positive heat‐mode resist and environmentally‐friendlily FeCl3 solution is as means an efficient developer. The corrosion selectivity of exposed to as‐deposited thin film reaches 2.3 and the etching selectivity of Si to Ge2Sb2Te5 thin film is as high as 15.75. Moreover, high‐resolution nanostructures with minimum linewidth of 180 nm and period of 400 nm are obtained along with high resolution of 130 nm. In addition, the mechanism of corrosion selectivity between as‐deposited and exposed thin film is further elucidated based on microstructural analysis. Hence, Ge2Sb2Te5 thin film is a promising positive resist for high‐resolution direct laser writing lithography.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"28 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88591643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoresponsivity Enhancement of Monolayer MoS2 by Silicon Quantum Dots","authors":"Minseon Gu, Keun Wook Lee, Beomjin Park, Beom Soo Joo, Young Jun Chang, Dong-Wook Park, Moonsup Han","doi":"10.1002/pssr.202300220","DOIUrl":"https://doi.org/10.1002/pssr.202300220","url":null,"abstract":"Hybrid 2D/0D structures with various 2D materials and 0D quantum dots (QDs) have been studied to overcome the limitations of 2D materials. In this work, a hybrid structure with MoS2 and silicon quantum dots (Si QDs) as a photodetector is developed. The I–V transfer characteristics show a threshold voltage shift after decorating Si QDs on MoS2, which results from an n‐type doping effect to the MoS2 channel from the Si QDs. The field‐effect mobility of the MoS2/Si QDs device is increased by ≈5.8 times compared with that of the bare MoS2 device. It is understood that the mobility enhancement is attributed to the surface defect passivation of MoS2 at the interface with Si QDs. It is observed that the photoresponsivity of the MoS2/Si QDs structure is improved by ≈7.7 times compared with that of the bare MoS2 device under 500 nm illumination. Additionally, it is observed that the photoluminescence (PL) intensity of MoS2 is increased about 4.5 times after decoration of Si QDs. The band alignment as type I at the interface between the Si QDs and MoS2 is interpreted. The mobility enhancement and the photoexcited charge transfer (CT) between the MoS2 and the Si QDs due to the illumination lead to enhancing the photoresponsivity of the MoS2/Si QDs hybrid structure.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81764581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Anisotropic optical properties of monolayer aligned single‐walled carbon nanotubes","authors":"G. Ermolaev, Ying Xie, Liu Qian, Mikhail K. Tatmyshevskiy, A. Slavich, Aleksey Arsenin, Jin Zhang, V. Volkov, A. Chernov","doi":"10.1002/pssr.202300199","DOIUrl":"https://doi.org/10.1002/pssr.202300199","url":null,"abstract":"Two‐dimensional materials are the fundamental building blocks for modern optoelectronics and photonics. Optically anisotropic monolayers give even more flexibility in device design and performance. However, the random orientation of optical axes in the large‐scale samples prevents anisotropic monolayers from widespread use. The alternative structure is a monolayer of aligned single‐walled carbon nanotubes (SWCNTs) with an anisotropic dielectric tensor. Here, we measure aligned SWCNTs monolayer anisotropic optical constants in a broad spectral range (250 – 1700 nm) for the first time. We discovered that it has a large birefringence of Δn ∽ 0.2 and a high dichroism of Δk ∽ 0.4. Moreover, we demonstrated that aligned SWCNTs monolayer optical response could be described by an effective medium approximation using the graphene dielectric function. Besides, it gives a universal approach for a determination of carbon concentration in nanotubes structures. It also applies for other types of carbon nanotubes, such as multi‐walled and randomly oriented carbon nanotubes arrays. Hence, our results add aligned SWCNTs monolayer optical constants to the optical anisotropy database, which facilitates the longstanding challenge of using one‐dimensional structures in two dimensions, and provide a rapid characterization method for carbon nanotubes.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89739992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase‐Change and Ovonic Materials (Fourth Edition)","authors":"P. Noé, B. Kooi, M. Wuttig","doi":"10.1002/pssr.202300129","DOIUrl":"https://doi.org/10.1002/pssr.202300129","url":null,"abstract":"Once again, it is our great pleasure to continue the EPCOS tradition by presenting this fourth edition of the special issue on Phase-Change and Ovonic Materials that is published each year as part of the European Symposium on Phase-Change and Ovonic Sciences (EPCOS). We have to admit that the 2022 edition of EPCOS had a special spirit as it marked the long-awaited return to a face-to-face on-site symposium after a two-year hiatus due to the Covid crisis. Last September, the 2022 edition of EPCOS was the most successful in terms of attendance in the history of EPCOS. This is no coincidence and once again, in this editorial, Harish Bhaskaran, Luci Bywater and the Oxford team are sincerely thanked on behalf of the entire EPCOS community for making this success possible even if unfortunately, some of the EPCOS major actors could not join us at the Wolfson College in Oxford this year. As in the three previous editions, this special issue again aims to summarize recent and innovative scientific and technological achievements in the field of phase-change materials, as well as their possible new fields of application. In addition to recent advances in this field, the objective is also to present emerging interests in neuromorphic computing, phase-change and nonlinear photonics or plasmonics. This special issue thus provides an overview of the state of the art, both experimental and theoretical, for experienced and young researchers interested in these topics. As usual, let us first recall, for the younger and newer members of our ever-evolving community, that EPCOS was born in Switzerland in 2001, with the aim to provide a platform to discuss and promote the fundamental science of phase-change materials (PCM). This goal also included their applications in rewritable optical discs (e.g., first with CDs and later with the successfully developed DVD and Blu-ray Disc formats) and thus initially PCOS referred to phase-change optical storage (which was diversified in 2005 to phase-change and ovonic science). In fact, EPCOS was born from the first PCOS symposium held in Japan in 1990, thanks to Professor Masahiro Okuda, who was the advisor of EPCOS during its early years. In recent years, the field has diversified considerably. While the scientific and technological fingerprints of the field’s founding father, the late Stanford Ovshinsky, are still very recognizable, the number of topics covered has continued to grow significantly with applications including non-volatile electronic memories, optoelectronics, photonics, and neuromorphic computing. The 2022 edition of EPCOS has confirmed that EPCOS is the premier international conference on this exciting and evergreen topic. This 2022 edition, which follows the 2021 virtual edition, was somewhat of a challenge for the EPCOS community. However, its unprecedented success confirmed the close ties between key players in the field, both academic and industrial. By again covering a rich variety of topics beyond phase-c","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"122 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76740347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Charge‐Mediated Copper‐Iodide‐Based Artificial Synaptic Device with Ultrahigh Neuromorphic Efficacy","authors":"D. S. Assi, Hongli Huang, Kadir Ufuk Kandira, Nasser S. Alsulaiman, Vaskuri C. S. Theja, Hasan T. Abbas, V. Karthikeyan, Vellaisamy A. L. Roy","doi":"10.1002/pssr.202300191","DOIUrl":"https://doi.org/10.1002/pssr.202300191","url":null,"abstract":"In the realm of artificial intelligence, ultrahigh‐performance neuromorphic computing plays a significant role in executing multiple complex operations in parallel while adhering to a more biologically plausible model. Despite their importance, developing an artificial synaptic device to match the human brain's efficiency is an extremely complex task involving high energy consumption and poor parallel processing latency. Herein, a simple molecule, copper‐iodide‐based artificial synaptic device demonstrating core synaptic functions of human neural networks is introduced. Exceptionally high carrier mobility and dielectric constant in the developed device lead to superior efficacies in neuromorphic characteristics with ultrahigh paired‐pusle facilitation index (>195). The results demonstrate biomimetic capabilities that exert a direct influence on neural networks across multiple timescales, ranging from short‐ to long‐term memory. This flexible reconfiguration of neural excitability provided by the copper‐iodide‐based synaptic device positions it as a promising candidate for creating advanced artificial intelligence systems.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91284293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrasmall CoSe2 Nanoparticles Grown on MoS2 Nanofilms: A New Catalyst for Hydrogen Evolution Reaction","authors":"Jia Liang, Yingchao Yang, Jing Zhang, Pei Dong, J. Lou","doi":"10.1002/pssr.202300169","DOIUrl":"https://doi.org/10.1002/pssr.202300169","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"64 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77631962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}