physica status solidi (RRL) – Rapid Research Letters最新文献

{"title":"Phase‐Change and Ovonic Materials (Fourth Edition)","authors":"P. Noé, B. Kooi, M. Wuttig","doi":"10.1002/pssr.202300129","DOIUrl":"https://doi.org/10.1002/pssr.202300129","url":null,"abstract":"Once again, it is our great pleasure to continue the EPCOS tradition by presenting this fourth edition of the special issue on Phase-Change and Ovonic Materials that is published each year as part of the European Symposium on Phase-Change and Ovonic Sciences (EPCOS). We have to admit that the 2022 edition of EPCOS had a special spirit as it marked the long-awaited return to a face-to-face on-site symposium after a two-year hiatus due to the Covid crisis. Last September, the 2022 edition of EPCOS was the most successful in terms of attendance in the history of EPCOS. This is no coincidence and once again, in this editorial, Harish Bhaskaran, Luci Bywater and the Oxford team are sincerely thanked on behalf of the entire EPCOS community for making this success possible even if unfortunately, some of the EPCOS major actors could not join us at the Wolfson College in Oxford this year. As in the three previous editions, this special issue again aims to summarize recent and innovative scientific and technological achievements in the field of phase-change materials, as well as their possible new fields of application. In addition to recent advances in this field, the objective is also to present emerging interests in neuromorphic computing, phase-change and nonlinear photonics or plasmonics. This special issue thus provides an overview of the state of the art, both experimental and theoretical, for experienced and young researchers interested in these topics. As usual, let us first recall, for the younger and newer members of our ever-evolving community, that EPCOS was born in Switzerland in 2001, with the aim to provide a platform to discuss and promote the fundamental science of phase-change materials (PCM). This goal also included their applications in rewritable optical discs (e.g., first with CDs and later with the successfully developed DVD and Blu-ray Disc formats) and thus initially PCOS referred to phase-change optical storage (which was diversified in 2005 to phase-change and ovonic science). In fact, EPCOS was born from the first PCOS symposium held in Japan in 1990, thanks to Professor Masahiro Okuda, who was the advisor of EPCOS during its early years. In recent years, the field has diversified considerably. While the scientific and technological fingerprints of the field’s founding father, the late Stanford Ovshinsky, are still very recognizable, the number of topics covered has continued to grow significantly with applications including non-volatile electronic memories, optoelectronics, photonics, and neuromorphic computing. The 2022 edition of EPCOS has confirmed that EPCOS is the premier international conference on this exciting and evergreen topic. This 2022 edition, which follows the 2021 virtual edition, was somewhat of a challenge for the EPCOS community. However, its unprecedented success confirmed the close ties between key players in the field, both academic and industrial. By again covering a rich variety of topics beyond phase-c","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"122 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76740347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Charge‐Mediated Copper‐Iodide‐Based Artificial Synaptic Device with Ultrahigh Neuromorphic Efficacy","authors":"D. S. Assi, Hongli Huang, Kadir Ufuk Kandira, Nasser S. Alsulaiman, Vaskuri C. S. Theja, Hasan T. Abbas, V. Karthikeyan, Vellaisamy A. L. Roy","doi":"10.1002/pssr.202300191","DOIUrl":"https://doi.org/10.1002/pssr.202300191","url":null,"abstract":"In the realm of artificial intelligence, ultrahigh‐performance neuromorphic computing plays a significant role in executing multiple complex operations in parallel while adhering to a more biologically plausible model. Despite their importance, developing an artificial synaptic device to match the human brain's efficiency is an extremely complex task involving high energy consumption and poor parallel processing latency. Herein, a simple molecule, copper‐iodide‐based artificial synaptic device demonstrating core synaptic functions of human neural networks is introduced. Exceptionally high carrier mobility and dielectric constant in the developed device lead to superior efficacies in neuromorphic characteristics with ultrahigh paired‐pusle facilitation index (>195). The results demonstrate biomimetic capabilities that exert a direct influence on neural networks across multiple timescales, ranging from short‐ to long‐term memory. This flexible reconfiguration of neural excitability provided by the copper‐iodide‐based synaptic device positions it as a promising candidate for creating advanced artificial intelligence systems.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91284293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrasmall CoSe2 Nanoparticles Grown on MoS2 Nanofilms: A New Catalyst for Hydrogen Evolution Reaction","authors":"Jia Liang, Yingchao Yang, Jing Zhang, Pei Dong, J. Lou","doi":"10.1002/pssr.202300169","DOIUrl":"https://doi.org/10.1002/pssr.202300169","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"64 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77631962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A hybrid supercapacitor from nickel cobalt sulfide and activated carbon for energy storage application","authors":"A. Markhabayeva, Anarova S. Assiya, Abdullin A. Khabibulla, Kalkozova K. Zhanar, Tulegenova T. Aida, N. Nuraje","doi":"10.1002/pssr.202300211","DOIUrl":"https://doi.org/10.1002/pssr.202300211","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"68 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91164122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis of Calcium Manganese Oxide Films Using a Sol‐Gel Method and Evaluation of Color and Photocatalytic Properties","authors":"Ryohei Oka, T. Hayakawa","doi":"10.1002/pssr.202300233","DOIUrl":"https://doi.org/10.1002/pssr.202300233","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80641149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (AlxGa1–x)2O3 Films Using Trimethylgallium","authors":"A. Bhuiyan, Lingyu Meng, Hsien-Lien Huang, C. Chae, Jinwoo Hwang, Hongping Zhao","doi":"10.1002/pssr.202300224","DOIUrl":"https://doi.org/10.1002/pssr.202300224","url":null,"abstract":"Growths of monoclinic (AlxGa1−x)2O3 thin films up to 99% Al contents are demonstrated via metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa) as the Ga precursor. The utilization of TMGa, rather than triethylgallium, enables a significant improvement of the growth rates (>2.5 μm h−1) of β‐(AlxGa1−x)2O3 thin films on (010), (100), and ( 2¯ 01) β‐Ga2O3 substrates. By systematically tuning the precursor molar flow rates, growth of coherently strained phase pure β‐(AlxGa1−x)2O3 films is demonstrated by comprehensive material characterizations via high‐resolution X‐ray diffraction (XRD) and atomic‐resolution scanning transmission electron microscopy (STEM) imaging. Monoclinic (AlxGa1−x)2O3 films with Al contents up to 99, 29, and 16% are achieved on (100), (010), and ( 2¯ 01) β‐Ga2O3 substrates, respectively. Beyond 29% of Al incorporation, the (010) (AlxGa1−x)2O3 films exhibit β‐ to γ‐phase segregation. β‐(AlxGa1−x)2O3 films grown on ( 2¯ 01) β‐Ga2O3 show local segregation of Al along (100) plane. Record‐high Al incorporations up to 99% in monoclinic (AlxGa1−x)2O3 grown on (100) Ga2O3 are confirmed from XRD, STEM, electron nanodiffraction, and X‐ray photoelectron spectroscopy measurements. These results indicate great promises of MOCVD development of β‐(AlxGa1−x)2O3 films and heterostructures with high Al content and growth rates using TMGa for next‐generation high‐power and high‐frequency electronic devices.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"21 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73235827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface Structure and Doping of Chemical Vapor Deposition‐Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations","authors":"S. Panasci, I. Deretzis, E. Schilirò, A. La Magna, F. Roccaforte, A. Koos, B. Pécz, S. Agnello, M. Cannas, F. Giannazzo","doi":"10.1002/pssr.202300218","DOIUrl":"https://doi.org/10.1002/pssr.202300218","url":null,"abstract":"The interface structure and electronic properties of monolayer (1L) MoS2 domains grown by chemical vapor deposition on 4H–SiC(0001) are investigated by microscopic/spectroscopic analyses combined with ab initio calculations. The triangular domains are epitaxially oriented on the (0001) basal plane, with the presence of a van der Waals (vdW) gap between 1L–MoS2 and the SiC terraces. The high crystalline quality of the domains is confirmed by photoluminescence emission. Furthermore, a very low tensile strain (ε ≈ 0.03%) of 1L–MoS2, consistent with the small in‐plane lattice mismatch, and a p‐type doping of (0.45 ± 0.11) × 1013 cm−2, is evaluated by Raman mapping. Density functional theory (DFT) calculations of the MoS2/4H–SiC(0001) system are also performed, considering different levels of refinement of the model: 1) the simple case of the junction between Si‐terminated SiC and MoS2, showing a covalent bond between the Si–S atoms and n‐type doping of MoS2; 2) the complete passivation of Si dangling bonds with a monolayer (1 ML) of oxygen atoms, resulting in a vdW bond with dSi–S ≈ 3.84 Å bond length and p‐type doping of MoS2; and 3) partial (¼ ML and ½ ML) oxygen coverages of the 4H–SiC surface, resulting in intermediate values of dSi–S and doping behavior.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88284748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical and Electrical Properties of Polystyrene/Poly‐methyl methacrylate Polymeric Blend Filled with Semiconductor and Insulator Nanofillers","authors":"A. El-Gamal","doi":"10.1002/pssr.202300145","DOIUrl":"https://doi.org/10.1002/pssr.202300145","url":null,"abstract":"The present study deals with the effect of adding different fillers (semiconductor and insulator) on a polystyrene (PS)/poly‐methyl methacrylate (PMMA) polymer blend using casting method. A constant content (1 wt%) of semiconductors [multiwalled carbon nanotubes (MWCNTs), polyaniline (PANI), zinc oxide nanoparticles (NPs), and titanium dioxide NPs] and insulator [silicon dioxide NPs] fillers is used. Transmission electron microscopy images for MWCNTs show that most nanotubes have an average diameter of 7–11 nm. Moreover, the average size of all metal nano‐oxides is almost 20 nm and confirmed by X‐ray diffraction. Fourier‐transform infrared spectroscopy confirms the formation and the interaction between PS/PMMA polymer blend and fillers. The structural, mechanical, optical, and dielectric properties of the prepared polymer nanocomposites are studied using different tools. Optical characteristics such as absorbance, reflection, bandgap energy (E g), and optical dielectric components (real and imaginary) are studied. These results reveal that pure 20PS/80PMMA film has E g(direct) = 4.46 eV, which drops as different fillers are incorporated into the blend. The addition of MWCNTs, PANI to the PS/PMMA blend improves the electrical conductivity due to the growth of conductive paths between the filler and the blending matrix.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"157 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84946592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of in‐situ oxidation‐resulted high‐k passivation layer on device stability and mobility improvement","authors":"Xianfu Dai, Yumei Jing, Rongqi Wu, Kui Tang, Xiaochi Liu, Jian Sun","doi":"10.1002/pssr.202300162","DOIUrl":"https://doi.org/10.1002/pssr.202300162","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"21 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89404058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Ferrimagnetic Order of CrSe2 Monolayer Under Strain and Charge Doping","authors":"Xinlong Yang, Meng Li, F. Zheng","doi":"10.1002/pssr.202300188","DOIUrl":"https://doi.org/10.1002/pssr.202300188","url":null,"abstract":"CrSe2 monolayer is a recently synthesized ferromagnetic material exhibiting remarkable environmental stability. By using first‐principles calculations, a comprehensive study on the magnetic phase diagram of CrSe2 monolayer under conditions of electron/hole doping and different strains is presented. It is demonstrated that applying compressive strain can induce a magnetic phase transition from the ferromagnetic order to a Hexagon ferrimagnetic order. Moreover, the results reveal that electron doping can attenuate the ferromagnetism in the monolayer. This work thus provides insights into the design of CrSe2‐based spintronic devices.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88019648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}