physica status solidi (RRL) – Rapid Research Letters最新文献_第7页

A hybrid supercapacitor from nickel cobalt sulfide and activated carbon for energy storage application 一种由硫化镍钴和活性炭混合制成的储能超级电容器

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-07-29 DOI: 10.1002/pssr.202300211

A. Markhabayeva, Anarova S. Assiya, Abdullin A. Khabibulla, Kalkozova K. Zhanar, Tulegenova T. Aida, N. Nuraje

引用次数: 0

Synthesis of Calcium Manganese Oxide Films Using a Sol‐Gel Method and Evaluation of Color and Photocatalytic Properties 溶胶-凝胶法制备氧化钙锰膜及其颜色和光催化性能评价

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-07-29 DOI: 10.1002/pssr.202300233

Ryohei Oka, T. Hayakawa

引用次数: 0

Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (AlxGa1–x)2O3 Films Using Trimethylgallium 金属有机化学气相沉积-使用三甲基镓生长的单斜(AlxGa1-x)2O3薄膜中Al掺入率高达99%

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-07-29 DOI: 10.1002/pssr.202300224

A. Bhuiyan, Lingyu Meng, Hsien-Lien Huang, C. Chae, Jinwoo Hwang, Hongping Zhao

{"title":"Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (AlxGa1–x)2O3 Films Using Trimethylgallium","authors":"A. Bhuiyan, Lingyu Meng, Hsien-Lien Huang, C. Chae, Jinwoo Hwang, Hongping Zhao","doi":"10.1002/pssr.202300224","DOIUrl":"https://doi.org/10.1002/pssr.202300224","url":null,"abstract":"Growths of monoclinic (AlxGa1−x)2O3 thin films up to 99% Al contents are demonstrated via metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa) as the Ga precursor. The utilization of TMGa, rather than triethylgallium, enables a significant improvement of the growth rates (>2.5 μm h−1) of β‐(AlxGa1−x)2O3 thin films on (010), (100), and ( 2¯ 01) β‐Ga2O3 substrates. By systematically tuning the precursor molar flow rates, growth of coherently strained phase pure β‐(AlxGa1−x)2O3 films is demonstrated by comprehensive material characterizations via high‐resolution X‐ray diffraction (XRD) and atomic‐resolution scanning transmission electron microscopy (STEM) imaging. Monoclinic (AlxGa1−x)2O3 films with Al contents up to 99, 29, and 16% are achieved on (100), (010), and ( 2¯ 01) β‐Ga2O3 substrates, respectively. Beyond 29% of Al incorporation, the (010) (AlxGa1−x)2O3 films exhibit β‐ to γ‐phase segregation. β‐(AlxGa1−x)2O3 films grown on ( 2¯ 01) β‐Ga2O3 show local segregation of Al along (100) plane. Record‐high Al incorporations up to 99% in monoclinic (AlxGa1−x)2O3 grown on (100) Ga2O3 are confirmed from XRD, STEM, electron nanodiffraction, and X‐ray photoelectron spectroscopy measurements. These results indicate great promises of MOCVD development of β‐(AlxGa1−x)2O3 films and heterostructures with high Al content and growth rates using TMGa for next‐generation high‐power and high‐frequency electronic devices.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"21 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73235827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Interface Structure and Doping of Chemical Vapor Deposition‐Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations 化学气相沉积生长MoS2在4H-SiC上的界面结构和掺杂的微观分析和从头计算

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-07-25 DOI: 10.1002/pssr.202300218

S. Panasci, I. Deretzis, E. Schilirò, A. La Magna, F. Roccaforte, A. Koos, B. Pécz, S. Agnello, M. Cannas, F. Giannazzo

{"title":"Interface Structure and Doping of Chemical Vapor Deposition‐Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations","authors":"S. Panasci, I. Deretzis, E. Schilirò, A. La Magna, F. Roccaforte, A. Koos, B. Pécz, S. Agnello, M. Cannas, F. Giannazzo","doi":"10.1002/pssr.202300218","DOIUrl":"https://doi.org/10.1002/pssr.202300218","url":null,"abstract":"The interface structure and electronic properties of monolayer (1L) MoS2 domains grown by chemical vapor deposition on 4H–SiC(0001) are investigated by microscopic/spectroscopic analyses combined with ab initio calculations. The triangular domains are epitaxially oriented on the (0001) basal plane, with the presence of a van der Waals (vdW) gap between 1L–MoS2 and the SiC terraces. The high crystalline quality of the domains is confirmed by photoluminescence emission. Furthermore, a very low tensile strain (ε ≈ 0.03%) of 1L–MoS2, consistent with the small in‐plane lattice mismatch, and a p‐type doping of (0.45 ± 0.11) × 1013 cm−2, is evaluated by Raman mapping. Density functional theory (DFT) calculations of the MoS2/4H–SiC(0001) system are also performed, considering different levels of refinement of the model: 1) the simple case of the junction between Si‐terminated SiC and MoS2, showing a covalent bond between the Si–S atoms and n‐type doping of MoS2; 2) the complete passivation of Si dangling bonds with a monolayer (1 ML) of oxygen atoms, resulting in a vdW bond with dSi–S ≈ 3.84 Å bond length and p‐type doping of MoS2; and 3) partial (¼ ML and ½ ML) oxygen coverages of the 4H–SiC surface, resulting in intermediate values of dSi–S and doping behavior.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88284748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical and Electrical Properties of Polystyrene/Poly‐methyl methacrylate Polymeric Blend Filled with Semiconductor and Insulator Nanofillers 半导体和绝缘体纳米填料填充聚苯乙烯/聚甲基丙烯酸甲酯聚合物共混物的光学和电学性能

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-07-21 DOI: 10.1002/pssr.202300145

A. El-Gamal

{"title":"Optical and Electrical Properties of Polystyrene/Poly‐methyl methacrylate Polymeric Blend Filled with Semiconductor and Insulator Nanofillers","authors":"A. El-Gamal","doi":"10.1002/pssr.202300145","DOIUrl":"https://doi.org/10.1002/pssr.202300145","url":null,"abstract":"The present study deals with the effect of adding different fillers (semiconductor and insulator) on a polystyrene (PS)/poly‐methyl methacrylate (PMMA) polymer blend using casting method. A constant content (1 wt%) of semiconductors [multiwalled carbon nanotubes (MWCNTs), polyaniline (PANI), zinc oxide nanoparticles (NPs), and titanium dioxide NPs] and insulator [silicon dioxide NPs] fillers is used. Transmission electron microscopy images for MWCNTs show that most nanotubes have an average diameter of 7–11 nm. Moreover, the average size of all metal nano‐oxides is almost 20 nm and confirmed by X‐ray diffraction. Fourier‐transform infrared spectroscopy confirms the formation and the interaction between PS/PMMA polymer blend and fillers. The structural, mechanical, optical, and dielectric properties of the prepared polymer nanocomposites are studied using different tools. Optical characteristics such as absorbance, reflection, bandgap energy (E g), and optical dielectric components (real and imaginary) are studied. These results reveal that pure 20PS/80PMMA film has E g(direct) = 4.46 eV, which drops as different fillers are incorporated into the blend. The addition of MWCNTs, PANI to the PS/PMMA blend improves the electrical conductivity due to the growth of conductive paths between the filler and the blending matrix.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"157 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84946592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of in‐situ oxidation‐resulted high‐k passivation layer on device stability and mobility improvement 原位氧化导致的高钾钝化层对器件稳定性和迁移率提高的影响

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-07-21 DOI: 10.1002/pssr.202300162

Xianfu Dai, Yumei Jing, Rongqi Wu, Kui Tang, Xiaochi Liu, Jian Sun

引用次数: 0

A Ferrimagnetic Order of CrSe2 Monolayer Under Strain and Charge Doping 应变和电荷掺杂下CrSe2单层的铁磁序

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-07-20 DOI: 10.1002/pssr.202300188

Xinlong Yang, Meng Li, F. Zheng

引用次数: 0

Long‐range magnetic exchange coupling in quasi‐two‐dimensional CrTe ferromagnetic thin films 准二维CrTe铁磁薄膜中的远程磁交换耦合

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-07-20 DOI: 10.1002/pssr.202300209

Hao Liu, Huan Zheng, Yamei Wang, Can Huang, Chunlan Ma, Yan Zhu, Hao Yang, L. Ling, Lei Zhang, Jiyu Fan

引用次数: 0

Atomic‐scale observations of the immiscible melted metals confined in a single‐atom layer 在单原子层中不混溶金属的原子尺度观察

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-07-19 DOI: 10.1002/pssr.202300254

L. Bondarenko, A. Tupchaya, T. V. Utas, Y. E. Vekovshinin, D. Gruznev, A. Mihalyuk, S. Eremeev, A. Zotov, A. Saranin

引用次数: 0

Improving charge mobilities of novel push‐pull small molecules through thermally induced self‐ordering 通过热诱导自序改善新型推拉小分子的电荷迁移率

physica status solidi (RRL) – Rapid Research Letters Pub Date : 2023-07-18 DOI: 10.1002/pssr.202300223

M. E. Sideltsev, A. Piryazev, A. Akhkiamova, M. V. Gapanovich, D. Anokhin, D. K. Sagdullina, A.S. Novikov, D. Ivanov, A. Akkuratov

引用次数: 0