Optical Materials最新文献

{"title":"Phase evolution and thermally enhanced Red-NIR upconversion luminescence in ZrO2:Yb3+/Tm3+","authors":"Rui Zhu,&nbsp;Tingting Li,&nbsp;Jiahui Ren,&nbsp;Mengzhen Jia,&nbsp;Puyan Hao,&nbsp;Mandong Zhai,&nbsp;Hongyan Gao,&nbsp;Xiaoqi Zhao","doi":"10.1016/j.optmat.2025.116967","DOIUrl":"10.1016/j.optmat.2025.116967","url":null,"abstract":"<div><div>The near-infrared (NIR) luminescence of lanthanide ions shows important application potential in biological imaging owing to its good tissue penetration ability and less biological tissue photodamage in comparison to visible luminescence. However, at present, the luminescence intensity of lanthanide-doped NIR luminescent materials is generally low, which greatly restricts their development in bioimaging application. In this work, NIR-emitted ZrO₂:Yb³⁺/Tm³⁺ sample was synthesized by urea-assisted co-precipitation method. The crystal phase evolution process and luminescence properties of ZrO₂:Yb³⁺/Tm³⁺ sample were precisely controlled by lanthanide ions doping. A 2.3-fold enhancement of the upconversion emission was recorded for the ZrO₂:Yb³⁺/Tm³⁺ sample as the temperature was increased from 25 °C to 225 °C because of the phonon-assisted electron population processes at specific energy levels. Our research results may inspire new ideas for developing thermally enhanced lanthanide-doped upconversion materials with high emission intensities.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116967"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143685191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Complex index of refraction of MBE grown 1 eV GaInAsNSb dilute nitride layers as a function of thermal annealing","authors":"M. Gabás ,&nbsp;E. Blanco ,&nbsp;I. Lombardero ,&nbsp;P.F. Palacios ,&nbsp;I. García ,&nbsp;N. Miyashita ,&nbsp;Y. Okada ,&nbsp;M. Domínguez ,&nbsp;C. Algora","doi":"10.1016/j.optmat.2025.116960","DOIUrl":"10.1016/j.optmat.2025.116960","url":null,"abstract":"<div><div>In this work, 1 eV GaInNAsSb layers with different thickness have been annealed to study the impact that the thermal treatments have on their optical properties. For such purpose, GaInNAsSb layers with thicknesses of 0.2, 1 and 3 μm were grown lattice-matched onto GaAs substrates. Each epiwafer was cut into four quarters: one quarter was left as the as-grown sample, another one was submitted to a Rapid Thermal Annealing, the third quarter was annealed in a Metal Organic Vapor Phase Epitaxy reactor, and the fourth one was submitted to the first annealing followed by the second one. The complex index of refraction of the samples has been determined using spectroscopic ellipsometry along a wide spectral range (250–2500 nm). The optical properties of the 1 and 3 μm as grown layers do not differ very much between them, while the 0.2 μm layer exhibits a particular behavior that can be correlated with similarities/differences in the dilute nitride layer composition. The two types of thermal annealing affect in a different way to both composition and optical properties of the GaInNAsSb layers depending on their thicknesses. Finally, the obtained refractive indices and extinction coefficients have been validated by simulating the experimental reflectance of the semiconductor structures. Therefore, the determination of the optical properties (ranging from 250 to 2500 nm) of 1 eV GaInNAsSb we present here, allows the simulation and optimization of optoelectronic devices incorporating this dilute nitride.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116960"},"PeriodicalIF":3.8,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143697190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature sensitivity enhancement of OFDR fibers based on PDMS/Glycerol films","authors":"Peng Li,&nbsp;Chuanyin Shang,&nbsp;Zhengrong Tong,&nbsp;Hao Wang","doi":"10.1016/j.optmat.2025.116940","DOIUrl":"10.1016/j.optmat.2025.116940","url":null,"abstract":"<div><div>Aiming at improving the sensitivity of OFDR distributed optical fiber temperature sensors, this paper introduces the design of a temperature sensor with a new structure. In this design, PDMS/Glycerol is coated on the surface of a SMF as a temperature-sensitive material. Within the temperature range from 30 °C to 150 °C, this sensor exhibits excellent temperature stability and repeatability, with an average relative deviation of only 0.16%, and its performance remains stable during temperature cycles. Furthermore, the temperature sensitivity of the sensor is 18.84 pm/°C, representing an 87% improvement compared to that of SMF.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116940"},"PeriodicalIF":3.8,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143747957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deep dive into structural and optical study of stuffed-tridymite rare earth (Sm3+, Eu3+) doped CsZnPO4","authors":"Haqnawaz Rafiq,&nbsp;Mudasir Farooq,&nbsp;Mir Hashim Rasool,&nbsp;Aadil Bashir Wani,&nbsp;Younus Hameed","doi":"10.1016/j.optmat.2025.116963","DOIUrl":"10.1016/j.optmat.2025.116963","url":null,"abstract":"<div><div>This work used the most popular solid-state method to generate stuffed-tridymite CsZnPO₄ doped with rare-earth ions (Eu³⁺, Sm³⁺). The XRD analysis performed at room temperature and Rietveld refinement using the FullProf suit package has revealed that the combination CsZnPO₄ has crystallized into a monoclinic crystal structure with space group P121/a1. Crystallite size is determined using the Scherrer, modified Scherrer, and Williamson Hall procedures; a comparison study between the approaches was also conducted. In this work, the atomic positions (x, y, z) of Cs, Zn, P, and O in the unit cell, as well as the occupancy, have been estimated, and potential structural parameters such as a, b, c, α, β, and γ have been calculated. A comparative FTIR analysis was carried out between orthorhombic CsMnPO₄ with space group Pn a 21 and monoclinic CsZnPO₄ with space group P121/a1. The band gap for the synthesized material CsZnPO₄ was then determined using the P. Kubelka and Munk technique, and the estimated band gap energy for the compound was roughly 3.9 electron volts, which is very close to the actual band gap of the material. The PL spectra of CsZnPO₄:xSm³⁺ and CsZnPO₄:xEu³⁺ were recorded at the exact stimulation wavelengths of 401 nm and 396 nm, respectively. It is discovered that as the doping concentration rises, so does the emission intensity, and at a specific concentration of doping, it peaks, after which it begins to decline monotonically at greater concentrations. It is demonstrated that the concentration quenching process is caused by dipole-quadrupole interaction rather than the non-radiative cross-relaxation process in both the phosphor materials. The orange-red area (0.573, 0.423) and red region (0.624, 0.376) are where the chromaticity coordinates of the produced luminous material CsZnPO4:xSm³⁺ and CsZnPO4:xEu³⁺, respectively, are located. As the temperature increased, the relative PL intensities decreased by a negligible amount, but their peak locations did not alter. The remarkable thermal stability of the produced material is demonstrated by the emission behavior at increasing temperatures, and to explain this behavior, the configurational coordinate model is employed. The phosphor CsZnPO₄ doped with Eu³⁺ and Sm³⁺ shows excellent promise for usage as a red-emitting and orange-red-emitting phosphor in a range of applications, including white LEDs and displays, based on the study conducted in the present work.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116963"},"PeriodicalIF":3.8,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143714408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing energy transfer in Er3+/Yb3+ Co-doped heavy metal oxide bismuth borate glasses for C-band optical amplifiers","authors":"Prasanth Musalikunta ,&nbsp;Ravi Nirlakalla ,&nbsp;Ravanamma Rallapalli ,&nbsp;Neelima Gaddam ,&nbsp;Venkata Krishnaiah Kummara ,&nbsp;Aboud Ahmed Awadh Bahajjaj ,&nbsp;Nanda Kumar Reddy Nallabala ,&nbsp;Upendra Kumar Kagola","doi":"10.1016/j.optmat.2025.116939","DOIUrl":"10.1016/j.optmat.2025.116939","url":null,"abstract":"<div><div>This study investigates the photoluminescence properties of heavy metal oxide glasses composed of B₂O₃, Bi₂O₃, Gd₂O₃, K₂O, and Li₂O, doped with Ytterbium (Yb³⁺) and Erbium (Er³⁺) ions, referred to as BBGKLEr³⁺/Yb³⁺. These glasses were made by melt-quenching procedure with varying concentrations of the Yb³⁺ dopant to assess their luminescence characteristics. Highpersensitive band in the visible spectrum was appeared at 521 nm for the transition (²H, ⁴G)_11/2 for Er³⁺ ions in BBGKLEr³⁺/Yb³⁺ glasses. A 980 nm diode laser was employed to excite the Er³⁺/Yb³⁺ ions, facilitating the investigation of up-conversion (UC) and down-conversion processes. The BBGKLEr³⁺/Yb³⁺ glasses exhibited significant UC emission alongside a strong emission band at 1530 nm. Notably, the gain cross-section for BBGKLglasses doped with 0.5 mol% Er³⁺ and 5 mol% Yb³⁺ ions increased to 2.39 × 10⁻²¹ cm², as determined by Mc Cumber theory. With an estimated lifetime of 0.885 ± 0.05 ms, the 1530 nm near infra-red emission demonstrated remarkable efficiency in promoting rare earth ion emission, further enhanced by the extended lifetime of the BBGKLEr³⁺/Yb³⁺ glasses. Spectroscopic analyses, including emission spectra, emission decay profiles, and gain cross-sections, suggest that BBGKLEr³⁺/Yb³⁺ glasses hold promise for use in C-band amplifiers or as laser gain media.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116939"},"PeriodicalIF":3.8,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143697738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxidation of silicon on substrate induced bubble-like damage of Mo/Si mirror irradiated by femtosecond EUV pulses","authors":"Jiahao Li ,&nbsp;Yunqi Peng ,&nbsp;Yuanan Zhao ,&nbsp;Xiangyu Zhu ,&nbsp;Ligong Ke ,&nbsp;Jiaoling Zhao ,&nbsp;Ge Zhang ,&nbsp;Tao Wang ,&nbsp;Zhilin Xia ,&nbsp;Zhangfan Wei ,&nbsp;Xiaoran Li ,&nbsp;Jianda Shao","doi":"10.1016/j.optmat.2025.116962","DOIUrl":"10.1016/j.optmat.2025.116962","url":null,"abstract":"<div><div>Mo/Si multilayers are commonly used as extreme ultraviolet (EUV) reflection coatings owing to their high reflectivity at EUV wavelengths. This study utilized Shanghai Soft X-ray Free-Electron Laser (SXFEL) to generate 13.5 nm, ∼300 fs pulse lasers, and the laser damage behaviors of Mo/Si multilayers were investigated. The designed Mo/Si multilayer achieved high reflectivity at an incident angle of 20°. After exposing the surface to an average of 20 laser pulses per point at normal incidence, bubble-like damage was observed. Monte Carlo method was employed to obtain the energy absorption distribution of Mo/Si multilayers under EUV laser radiation. It was confirmed that the cause of EUV laser damage to Mo/Si multilayers was the enhancement of energy absorption, leading to the melting of the layers. High-energy absorption occurred at a place close to the substrate induced by the oxidation of Si and on the top of the multilayers, which resulted in multilayers detaching from the substrate and forming bubble-like morphology. This intensified interlayer diffusion and altered crystal orientation, resulting in irreversible damage to the multilayers.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116962"},"PeriodicalIF":3.8,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143685369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Light selective reflection asymmetry in cholesteric layer with planar–conical anchoring","authors":"M.A. Lesnoy ,&nbsp;M.N. Krakhalev ,&nbsp;W. Lee ,&nbsp;V.Ya. Zyryanov","doi":"10.1016/j.optmat.2025.116924","DOIUrl":"10.1016/j.optmat.2025.116924","url":null,"abstract":"<div><div>The orientational structure and spectral properties of a cholesteric layer with planar–conical boundary conditions are studied. Initially, a structure with circular-shaped domains characterized by double twisting of the surface linear defect is formed. Under the influence of an electric field, the domains take the shape of polygons. This system has an asymmetric selective reflection of light: the reflection of right-circularly polarized light close to 100% is observed at a normal incidence of radiation on the sample from the planar boundary conditions, while a selective reflection of light does not occur for radiation incident from the conical anchoring. The light transmission of the sample in the forward direction does not depend on which substrate the radiation falls on. This spectral behaviour is due to the peculiarity of the formation of the domain structure in the cholesteric layer, in which the circular domains are initially located only near the substrate with a conical anchoring. A practically uniform planar cholesteric structure is formed near another substrate with planar boundary conditions. The selective reflection asymmetry is reduced by an applied voltage in the range of 0 to 12 V. The cholesteric transforms into a scattering state at an applied voltage of 12 V <span><math><mrow><mo>&lt;</mo><mi>U</mi><mo>&lt;</mo><mn>72</mn></mrow></math></span> V and becomes a transparent at <span><math><mrow><mi>U</mi><mo>&gt;</mo><mn>72</mn></mrow></math></span> V. Switching off the electric field, under the influence of which the cholesteric is in a transparent state, leads to the restoration of the asymmetry of selective light reflection.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116924"},"PeriodicalIF":3.8,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143685188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancement of up-conversion luminescence intensity of Er-doped CaMoO4 by K2CO3 addition","authors":"Tomoki Koikawa ,&nbsp;Tomoyuki Yamamoto","doi":"10.1016/j.optmat.2025.116959","DOIUrl":"10.1016/j.optmat.2025.116959","url":null,"abstract":"<div><div>The effect of K₂CO₃ addition in CaMoO₄ for the synthesis by the solid-state reaction method on its up-conversion (UC) luminescence intensity has been investigated. The UC luminescence intensity was optimized by changing the amount of doped Er ions, which showed the maximum emission intensity with the cation ratio of Ca: Er: Mo = 0.97 : 0.03: 1. Then the change in UC luminescence intensity was compared by changing the amount of K₂CO₃ additions in raw materials before sintering. Observed UC luminescence intensity increased as increase of K₂CO₃ amount. The mechanism of the enhancement of UC luminescence intensity was studied by the examinations of X-ray diffraction, X-ray fluorescence, thermogravity measurements, and scanning electron microscope observations. The first principles calculations were also carried out to examine the substitution site of Er ions in CaMoO₄.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116959"},"PeriodicalIF":3.8,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143704546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spectroscopic and vibrational properties of CsI single crystals doped with divalent samarium","authors":"D.O. Sofich,&nbsp;A.I. Bogdanov,&nbsp;R.Yu Shendrik","doi":"10.1016/j.optmat.2025.116958","DOIUrl":"10.1016/j.optmat.2025.116958","url":null,"abstract":"<div><div>For the first time, a CsI:Sm²⁺ single crystal was successfully grown using the Kyropoulos method. Spectroscopic studies and theoretical calculations were conducted to characterize the crystal. The luminescence spectra and their temperature dependencies were investigated, revealing that the CsI:Sm²⁺ crystal contains at least two distinct types of radiative centers with differing Sm²⁺ ion environments. At room temperature, the crystal exhibits broad-band luminescence attributed to parity-allowed interconfigurational 4f⁵5d¹→4f⁶ transitions of Sm²⁺. At lower temperatures, sharp emission lines corresponding to 4f⁶→ 4f⁶ transitions emerge, while the 4f⁵5d¹→4f⁶ luminescence bands undergo a redshift due to strong electron-phonon interactions. The absence of spectral overlap between the 4f⁶ and 4f⁵5d¹ states leads to inefficient energy transfer from the host matrix to the Sm²⁺ ions.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116958"},"PeriodicalIF":3.8,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143685306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MnCr2O4: A suitable material with significant optical response for optoelectronic devices","authors":"Ala Ben Abderrazak Hajji ,&nbsp;Mouna Wali ,&nbsp;Radhia Dhahri ,&nbsp;Souha Kammoun ,&nbsp;Essebti Dhahri ,&nbsp;Jose F.M.L. Mariano ,&nbsp;Mosbah Jemmali","doi":"10.1016/j.optmat.2025.116951","DOIUrl":"10.1016/j.optmat.2025.116951","url":null,"abstract":"<div><div>In current high-tech electronics, a power-efficient and compact light source has an essential role to play in the development of non-destructive and non-invasive detection applications as well as for advancing of technological innovation. In this order, an innovative investigation has been taken into consideration in this paper to characterize the optoelectronic behaviour of MnCr₂O₄ spinel chromite compound based on both experimental and theoretical approaches. The room temperature X-ray diffraction gives rise to a single-phase spinel compound which crystallises in the cubic system with the space group (Fd <span><math><mrow><mover><mrow><mn>3</mn><mspace></mspace></mrow><mo>‾</mo></mover></mrow></math></span> m). Thanks to the UV–Visible/NIR absorbance and reflectance measurement, the direct semiconducting behaviour (E_dg = 2.41 eV) of chromite sample have been verified. The spectral behaviour of absorbance proves that the sample under study exhibit a broad absorption in the visible range. The high localized state density is confirmed by the significant high Urbach energy value that was observed (E_u = 2.86 eV). Various optical parameter such as refractive index, extinction coefficient, dielectric real and imaginary optical permittivity have been analysed to more investigate experimentally the optoelectronic behaviour of the studied sample. Owing to the Wemple Di-Domenico model additional dispersive parameters have been identified. A comprehensive analysis of the crystal field theory based on the theoretical evaluation of the algebraic Racah tensor was taken into consideration on trivalent chromium Cr³⁺ (3 d³) according to the O_h symmetry site.The demonstrated results are undoubtedly a road to achieving high-power conversion efficiency making our material promising for multitude optoelectronic application.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116951"},"PeriodicalIF":3.8,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143685304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}