Optical Materials最新文献

{"title":"Integrated photon sensor based on Ti3C2Tx MXene film and microgroove Mach-Zehnder Interferometer","authors":"Pengyu Liu ,&nbsp;Jianmin Cui ,&nbsp;Huizhen Tan ,&nbsp;Shangbao Wu ,&nbsp;Yongchao Zeng ,&nbsp;Lihui Feng","doi":"10.1016/j.optmat.2025.117052","DOIUrl":"10.1016/j.optmat.2025.117052","url":null,"abstract":"<div><div>Optical waveguide refractive index (RI) sensors have significant potential in various environmental-monitoring fields. Given the limitations of waveguide materials, enhancing the sensitivity of the optical waveguide sensors requires materials functionalization. Moreover, the sensor structure requires a specialized design to enhance its sensitivity. In this study, a hybrid optical waveguide RI sensor was used fabricated by integrating a Ti3C2Tx MXene film with a Microgroove Mach–Zehnder Interferometer (MMZI). First, the sensor arm is etched to create a microgroove structure, which enhances the interaction between the sensor arm and the external environment. Second, the agglomeration of MXene was inhibited by vacuum filtration, resulting in a large-area, self-supporting MXene membranes. Finally, an MXene self-supporting film was prepared and precisely transferred to the microgroove of the sensing arm to create a wafer-level MXene-Based Composite Waveguide Sensors. The experimental results demonstrate a linear relationship between the light intensity drift of the sensing probe and the RI change with the sensor sensitivity measured at −738 dB/RIU and a linear correlation coefficient of 0.99758. Additionally, this study employed the density functional theory (DFT) to calculate the RI parameters of the MXene materials. This type of Composite Waveguide Sensors can be mass-produced using semiconductor processing technology and has broad applications in fields such as environmental monitoring.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117052"},"PeriodicalIF":3.8,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143845090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Charge transition level energies of the 1+, 2+, 3+, and 4+ 3dq transition metals; new insight and tutorial review","authors":"Pieter Dorenbos","doi":"10.1016/j.optmat.2025.117007","DOIUrl":"10.1016/j.optmat.2025.117007","url":null,"abstract":"<div><div>The defect levels of the 3<span><math><msup><mrow><mi>d</mi></mrow><mrow><mi>q</mi></mrow></msup></math></span> transition metals (TM) within the bandgap of compounds provide compounds with properties that are utilized in <em>e.g.</em> luminescence, lasers, photochromism, batteries, catalysis, semiconductors, biochemistry. Knowledge of the ground-state level locations, or equivalently the charge transition level (CTL) energies, or equivalently the vacuum-referred binding energies (VRBE), is important to understand or engineer performance. Despite 70 years of interest in the topic, understanding and controlling TM defect levels remains elusive. In this work, experimental data, theories developed, progress over time, and current status are reviewed, and new insights are presented. We will start with the classic theory, first for free-ion 3<span><math><msup><mrow><mi>d</mi></mrow><mrow><mi>q</mi></mrow></msup></math></span> TMs and then for TMs in inorganic compounds and organic complexes. The Slater–Condon <span><math><msup><mrow><mi>F</mi></mrow><mrow><mi>k</mi></mrow></msup></math></span>, the Racah <span><math><mi>A</mi></math></span>, <span><math><mi>B</mi></math></span>, and <span><math><mi>C</mi></math></span> parameters, the crystal field interaction, and the Tanabe–Sugano diagrams will be treated on a tutorial level. An expression reproducing the CTL energies relative to the vacuum level as a function of the number <span><math><mi>q</mi></math></span> of electrons in the 3<span><math><msup><mrow><mi>d</mi></mrow><mrow><mi>q</mi></mrow></msup></math></span> TMs will be derived. The expression contains five essential parameters related to the chemical shift, Racah parameters, the nephelauxetic effect, and the crystal field. Data on TMs of different valences in 18 chemical environments are collected from the literature. These are inorganic compounds ranging from wide-band-gap halides (F, Cl, Br), chalcogenides (O, S, Se), small-band-gap II–VI and III–V semiconductors, and two TM organic complexes. All provide octahedral or tetrahedral coordinated sites for the TM. Data from luminescence and absorption spectroscopy, deep-level transient spectroscopy, photocurrents, thermoluminescence, and electrochemistry are translated into CTL energies. Next, the derived expression is used to reproduce the CTL energies, providing the values of the five parameters for each compound. The parameters appear strongly related to each other and change predictably with the valence of the TM and the properties of the environment.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117007"},"PeriodicalIF":3.8,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143828233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thickness-dependent structure and transparent conducting properties of sputtered Ta lightly-doped ZnO films","authors":"Trang Thuy Thi Phan ,&nbsp;Oanh Kieu Truong Le ,&nbsp;Y Nhu Ngoc Duong ,&nbsp;Nhi Yen Vo Le ,&nbsp;Trieu Quang Vo ,&nbsp;Oanh Hoang Vo ,&nbsp;Thuy Dieu Thi Ung ,&nbsp;Thang Bach Phan ,&nbsp;Vinh Cao Tran ,&nbsp;Anh Tuan Thanh Pham","doi":"10.1016/j.optmat.2025.117045","DOIUrl":"10.1016/j.optmat.2025.117045","url":null,"abstract":"<div><div>Doping in ZnO emerges as an effective way to improve the performance of transparent electrodes. Since the radius of Ta and Zn are very close, substituting Zn with Ta does not introduce additional stress into the crystal network. Undoped ZnO and Ta-doped ZnO (TZO) films with different thicknesses were deposited on glass substrates by using magnetron sputtering. The effects of thickness on the structural, optical, and electrical properties of the films were studied. The results showed insignificantly differences in the structural and optical properties of the TZO films at different thicknesses. However, a remarkable change was observed in the electrical properties of TZO films, which was contributed by the formation of native defects (mainly oxygen vacancies). As a result, the TZO film deposited for 15 min corresponding to 670 nm in thickness possessed the highest values of carrier concentration and mobility due to the change of point defect states, which was confirmed by photoluminescence analysis.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117045"},"PeriodicalIF":3.8,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143829594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Manifesting the versatile properties of the Magnesium MOS diodes for optoelectronic applications","authors":"G. Alan Sibu ,&nbsp;V. Balasubramani ,&nbsp;P. Gayathri ,&nbsp;M. Aslam Manthrammel ,&nbsp;Mohd Shkir","doi":"10.1016/j.optmat.2025.117047","DOIUrl":"10.1016/j.optmat.2025.117047","url":null,"abstract":"<div><div>This pioneering study explores the thermally-induced morphological and optical transformations of spray pyrolyzed Magnesium oxide (MgO) thin films, tailored for metal-oxide-semiconductor (MOS) Schottky barrier diodes. By leveraging MgO's unique attributes, including its expansive band gap, tailored surface topography, and tuneable conductivity, we harness the material's potential for cutting-edge optoelectronic applications. Utilizing the cost-effective and widely available JNSP technique, we deposit large-area thin films with unparalleled uniformity. A comprehensive characterization of the coated thin films, conducted using advanced analytical tools such as XRD, UV, FE-SEM, EDX and XPS, reveals that an optimal substrate temperature of 450 °C yields enhanced structural, morphological, and optical properties. The fabricated MOS diode, incorporating the optimized MgO thin films, exhibit superior photodiode parameters, including a reduced ideality factor of 3.81 (under light condition) and 5.05 (in dark condition), an elevated barrier height of 0.73 eV (under light condition) and 0.71 eV (in dark condition), and a diminished leakage current. Notably, these diodes demonstrate a high photosensitivity of 48.96 %, a responsivity of 27.11 mA/W, a quantum efficiency of 1.05 %, and a detectivity of 5.31 × 10⁻⁹ Jones. These findings have far-reaching implications for the development of high-performance MOS Schottky barrier diode, poised to revolutionize the landscape of advanced optoelectronic and photovoltaic applications.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117047"},"PeriodicalIF":3.8,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143829591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical modeling of SiOx thin films for physicochemical property measurement by spectroscopic ellipsometry","authors":"Fangqi Ge ,&nbsp;Likun Wang ,&nbsp;Gaorong Han ,&nbsp;Yong Liu ,&nbsp;Sainan Ma","doi":"10.1016/j.optmat.2025.117044","DOIUrl":"10.1016/j.optmat.2025.117044","url":null,"abstract":"<div><div>Spectroscopic ellipsometry (SE) is widely recognized for measuring the optical parameters of thin films, and its potential for in-depth analysis attracts attention from both scientific and technological aspects. Here, an advanced optical modeling approach was proposed to extend SE to investigate the physicochemical properties of SiO_x thin films. Amorphous silicon oxide thin films (SiO_x, 0 ≤ x ≤ 2) were deposited via mid-frequency magnetron sputtering under varying oxygen partial pressures and sputtering powers. The Tauc-Lorentz model was first developed to extract the optical properties of amorphous silicon (a-Si) and SiO₂, then the Bruggeman Effective Medium Approximation (BEMA) model based on the derived optical constants (<em>n</em>, <em>k</em>) of a-Si and SiO₂ was further employed to reveal the structure and optical properties of SiO_x thin films. The SE results were simultaneously verified through profilometer, UV–vis–NIR spectrophotometer, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy, ensuring the accuracy and reliability of the modeling. Our work provides a theoretical and methodological foundation for advancing SE as a non-destructive in-situ technique, which is not only suitable for amorphous silicon oxide films but also for other non-stoichiometric thin films.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117044"},"PeriodicalIF":3.8,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143826220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High energy Q-switched Tm:Ho co-doped fiber laser based on gallium-doped zinc oxide nanoparticle as saturable absorber","authors":"Ahmed Shakir Al-Hiti,&nbsp;Bashayer Ismail Hamdallah,&nbsp;Shahad Hussam","doi":"10.1016/j.optmat.2025.117043","DOIUrl":"10.1016/j.optmat.2025.117043","url":null,"abstract":"<div><div>We demonstrated that Gallium Doped Zinc Oxide (Ga:ZnO) nanoparticles (NPs) can operate as saturable absorbers (SAs) in the 2 μm region. Casting and sonochemical methods fabricate Ga:ZnO NPs to form an absorber film. The laser system operates at 1959.42 nm with a 1.32 nm spectral bandwidth. The SA film generated a short pulse width of 1.57 μs with a repetition rate of 44.17 kHz, respectively. The laser system attained saturation intensity and modulation depth of 0.09 MW/cm² and 22 %. The proposed laser also achieved pulse energy and output power of about 5.7 mW and 129 nJ, respectively. This SA was used for the first time in laser applications, especially in the 2-μm region.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117043"},"PeriodicalIF":3.8,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143826221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum dots-doped microlenses made by photolithography","authors":"Leila Issoufou Alfari ,&nbsp;J. Houel ,&nbsp;A. Belarouci ,&nbsp;H. Sahib ,&nbsp;S. Guy ,&nbsp;F. Lerouge ,&nbsp;M. Leocmach ,&nbsp;B. Mahler ,&nbsp;A. Gassenq","doi":"10.1016/j.optmat.2025.117028","DOIUrl":"10.1016/j.optmat.2025.117028","url":null,"abstract":"<div><div>Microlenses doped with quantum dot emitters offer promising potential for photonics applications, but they require complex fabrication. In this work, we present a method to fabricate microlenses incorporating core/shell CdSe/Cd_xZn_1-xS quantum dot red emitters using photolithography. The quantum dots were first synthesized and dispersed in propylene glycol monomethyl ether acetate solvent using suitable ligand exchange. This quantum dot-loaded solvent was then combined with a transparent commercial photoresist and patterned via ultraviolet lithography to create micro-disks with diameters ranging from 20 to 5 μm. The microstructures were then annealed, forming microlenses through the thermal reflow of the photoresist. Micro-photoluminescence and lifetime measurements confirm the homogeneous and efficient emission of the quantum dots within the microlenses. This work demonstrates the feasibility of fabricating microlenses doped with CdSe-based core/shell quantum dots through photolithography and thermal reflow, offering a straightforward approach for photonics applications.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117028"},"PeriodicalIF":3.8,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143847982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth and optical spectroscopy study of low-temperature phase of La0.99Pr0.01Sc3(BO3)4 crystal","authors":"T.A. Igolkina ,&nbsp;E.P. Chukalina ,&nbsp;A.B. Kuznetsov ,&nbsp;K.A. Kokh ,&nbsp;S.A. Klimin ,&nbsp;V.N. Denisov ,&nbsp;K.N. Boldyrev ,&nbsp;M.N. Popova","doi":"10.1016/j.optmat.2025.117040","DOIUrl":"10.1016/j.optmat.2025.117040","url":null,"abstract":"<div><div>La_0.99Pr_0.01Sc₃(BO₃)₄ single crystals were grown by top-seeded solution growth method using LiBO₂–LiF flux. Wide-range high-resolution absorption and luminescence spectra of the grown crystals at different temperatures were registered in linearly polarized light. The crystal-field level diagram for the ³H_4,6, ³F_2,3,4, ¹G₄, ¹D₂, ³P_0,1,2, and ¹I₆ multiplets of the Pr³⁺ ion in LaSc₃(BO₃)₄:Pr³⁺ was constructed for the first time. A monoclinic structure of the crystal (space group <em>Cc</em>) was determined using X-ray diffraction and optical methods. IR reflectance and Raman spectra clearly reveal the contribution of BO₃ molecular groups. Weak satellites of the absorption lines were observed and explained by transitions in Pr³⁺ ions located near antisite defects (i.e. Ln³⁺ ions in octahedral sites instead of Sc³⁺, and Sc³⁺ in Ln³⁺ sites) formed during the crystal growth.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117040"},"PeriodicalIF":3.8,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143826222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of PZT-Au composite films via Aerosol Deposition for real-time tunable optical modulators","authors":"Jongwoo Lim ,&nbsp;Yeongjin Kim ,&nbsp;Jun Akedo ,&nbsp;Hak Ki Yu ,&nbsp;Jae-Young Choi ,&nbsp;Jae-Hyuk Park","doi":"10.1016/j.optmat.2025.117041","DOIUrl":"10.1016/j.optmat.2025.117041","url":null,"abstract":"<div><div>In this study, we successfully fabricated PZT-Au composite films using the Aerosol Deposition (AD) method and demonstrated their potential as real-time tunable optical modulators. By integrating gold nanoparticles into the PZT matrix, we achieved dynamic control of plasmonic absorption and optical modulation under applied electric fields. The AD method enabled room-temperature deposition of dense films with uniformly distributed Au nanoparticles. Post-annealing, the Au particles recovered their spherical shape, enhancing plasmonic absorption and improving optical transparency. A relative transmittance change of 41 % at 780 nm was observed when increasing the voltage from 30 V to 150 V, along with a 50 nm redshift attributed to electric-field-induced refractive index changes in the PZT matrix. Furthermore, under a 10 MHz alternating electric field, the films exhibited periodic modulation of transmittance, confirming their capability for high-speed, real-time optical response. These results demonstrate the promise of PZT-Au composites for next-generation tunable electro-optic devices and sensors.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117041"},"PeriodicalIF":3.8,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Extended study of crystal structures, optical properties and vibrational spectra of polar 2-aminopyrimidinium hydrogen phosphite and three centrosymmetric salts - bis(2-aminopyrimidinium) sulfate monohydrate and two 2-aminopyrimidinium hydrogen sulfate polymorphs","authors":"Irena Matulková ,&nbsp;Ladislav Bohatý ,&nbsp;Petra Becker ,&nbsp;Ivana Císařová ,&nbsp;Róbert Gyepes ,&nbsp;Michaela Fridrichová ,&nbsp;Jan Kroupa ,&nbsp;Petr Němec ,&nbsp;Ivan Němec","doi":"10.1016/j.optmat.2025.117033","DOIUrl":"10.1016/j.optmat.2025.117033","url":null,"abstract":"<div><div>This study aimed primarily at completing and extending the characterization of the crystallographic, spectroscopic and optical properties of polar, biaxial, optically negative 2-aminopyrimidinium(1+) hydrogen phosphite. Besides the redetermination of the low-temperature crystal structure (space group <em>P</em>2₁), high-quality single crystals of this salt were grown from an aqueous solution, and their optical properties were studied. The determination of the refractive indices in the wavelength range of 435–1083 nm showed anomalous dispersion of the refractive indices, resulting in a point of uniaxiality. The crystal allows phase matching for collinear second harmonic generation (SHG) processes of both type I and type II in a broad wavelength range. SHG properties were studied for powdered size-fractioned samples and oriented single-crystal cuts. The optical damage threshold experiments confirmed excellent optical resistance - at least 220 TWm⁻² and 70 TWm⁻² for 800 and 1000 nm irradiation, respectively. The low-temperature crystallographic study was also extended for three monoclinic salts of 2-aminopyrimidine and sulfuric acid - i.e. bis(2-aminopyrimidinium(1+) sulfate monohydrate (space group <em>P</em>2₁/<em>n</em>) and two polymorphs of 2-aminopyrimidinium(1+) hydrogen sulfate (both with space group <em>P</em>2₁/<em>c</em>). The vibrational spectra of all title compounds were assigned using single-molecule quantum chemical computations (including Potential Energy Distribution analysis) in combination with the nuclear site group analysis. Spectroscopic results concerning sulfates of 2-aminopyrimidine provided valuable “reference” materials for the vibrational spectroscopic study and also addressed the question of their polymorphism. An optimal computational approach employing solid-state DFT calculations has also been sought to model the vibrational spectra of 2-aminopyrimidinium (1+) hydrogen phosphite crystals.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117033"},"PeriodicalIF":3.8,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143870760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}