Optical Materials最新文献

{"title":"Metallic transition metal dichalcogenide-based single-frequency fiber lasers with sub-kHz linewidths","authors":"Yiyu Gan,&nbsp;Wenyao Zhang,&nbsp;Qiao Wen","doi":"10.1016/j.optmat.2025.116941","DOIUrl":"10.1016/j.optmat.2025.116941","url":null,"abstract":"<div><div>MTe₂ (M = V, Nb), with remarkable physical features, is a typical layered metallic transition metal dichalcogenide that has garnered a lot of interest. It has established a wide range of applications in the disciplines of advanced electronic devices, magnetics, and electrochemistry. Nevertheless, its utilization in single frequency fiber lasers has been rather restricted. MTe₂ (M = V, Nb) samples were exfoliated into a few layers by using liquid phase exfoliation. Next, by carefully depositing MTe2 (M = V, Nb) nanosheets onto the surface of D-shaped fibers, we investigated the potential applications of MTe₂ (M = V, Nb)-based transient bragg grating. This resulted in the successful development of two stable single-frequency fiber lasers based on VTe₂ and NbTe₂, respectively. The center wavelengths of these SFFLs are approximately 1550 nm. The linewidth of NbTe₂, which is the narrowest ever reported for an SFFL based on low-dimensional materials, was measured to be approximately 354.5 Hz, with a signal-to-noise ratio of 72.672 dB. The signal-to-noise ratio of VTe₂ is about 75.22 dB, the highest observed among lasers based on low-dimensional materials.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116941"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143714510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal noise reduction in ion-beam sputtered HfO2:Ta2O5 thin films via high-temperature treatment","authors":"Valeria Milotti ,&nbsp;Giulio Favaro ,&nbsp;Massimo Granata ,&nbsp;Danièle Forest ,&nbsp;Christophe Michel ,&nbsp;Julien Teillon ,&nbsp;Nicole Busdon ,&nbsp;Marco Bazzan ,&nbsp;Hanna Skliarova ,&nbsp;Giacomo Ciani ,&nbsp;Carlo Scian ,&nbsp;Livia Conti ,&nbsp;Shima Samandari ,&nbsp;Valentina Venturino ,&nbsp;Michele Magnozzi ,&nbsp;Maurizio Canepa ,&nbsp;Nicholas Demos ,&nbsp;Slawomir Gras ,&nbsp;Matthew Evans ,&nbsp;Valérie Martinez ,&nbsp;Anaël Lemaître","doi":"10.1016/j.optmat.2025.116901","DOIUrl":"10.1016/j.optmat.2025.116901","url":null,"abstract":"<div><div>Reducing coating thermal noise (CTN) in mirrors for gravitational wave (GW) interferometers is pivotal to improving sensitivity in the mid-frequency range. Current mirror coatings are heat-treated (annealed) after deposition in order to partially relax their microstructure and to improve their optical and mechanical properties. The maximum annealing temperature is an important parameter in this respect as a higher thermal energy allows the system to relax to more stable configurations, which is often beneficial for the thermal noise performances of the coatings. However, the useful temperature range is limited by the stability of the amorphous microstructure, since excessive heating eventually leads to the formation of crystalline grains which are detrimental from both the mechanical and optical viewpoints. In this work, inspired by the possibility to improve glass stability in alloys by a careful choice of mixing ratios, we studied ion-beam co-sputtered amorphous HfO₂:Ta₂O₅ thin films with different HfO₂ concentrations, so as to identify conditions that would lead to a higher glass stability in order to explore the effects of a thermal annealing over an extended temperature range. We then deposited a multilayer mirror, alternating layers of HfO₂:Ta₂O₅ with composition providing the highest crystallization temperature and SiO₂ layers. The thermal Brownian noise of the mirror coating was found to decrease with increasing heat-treatment temperatures, reaching losses comparable to the Ti-doped Ta₂O₅ coatings of Advanced LIGO when heated at the highest possible temperature. Our results demonstrate the critical importance of optimizing the film composition and annealing procedure in order to improve the coating performances and the sensitivity for the next generation of GW detectors.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116901"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143726293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"WO3 nanoparticles-embedded porous silicon: Dual-function materials synthesized via laser ablation and electrochemical etching for advanced photodetection and gas sensing applications","authors":"Allaa A. Jabbar,&nbsp;Raid A. Ismail,&nbsp;Alwan M. Alwan","doi":"10.1016/j.optmat.2025.116971","DOIUrl":"10.1016/j.optmat.2025.116971","url":null,"abstract":"<div><div>In light of their outstanding physical and chemical traits, nanostructured devices have attracted significant attention. In light of their outstanding physical and chemical traits, nanostructured devices have attracted significant attention. The manipulation of the dimensions and morphology of nanostructured surfaces could precisely adjust these characteristics. In this work, porous silicon (PSi) was synthesized through a laser-assisted electrochemical etching method. The porous silicon was embedded with tungsten trioxide WO₃ nanoparticles (NPs), which were synthesized using liquid phase laser ablation at different laser fluences. X-ray diffraction (XRD) analysis verified the synthesis of tungsten oxide nanoparticles in a crystalline form featuring a monoclinic structure, which was integrated into the porous silicon matrix. Investigations utilizing scanning electron microscopy (SEM) and transmission electron microscopy (TEM) exhibited the development of spherical tungsten oxide nanoparticles, featuring diameters ranging from 110 to 153 nm, upon the laser fluence employed. SEM analysis further showed that the average pore diameter of the porous silicon was 1.6 μm, with the tungsten oxide nanoparticles embedded inside the pores. Optical measurements indicated that the tungsten oxide energy gap was 3.2 eV at a laser fluence of 51 J/cm² and rose to 3.55 eV as the laser fluence increased to 71 J/cm². Zeta potential studies indicated that the nanoparticles formed at 61 J/cm² were stable. The optoelectronic properties of WO₃ nanoparticle-embedded PSi/c-Si heterojunction photodetectors fabricated at different laser fluences were also investigated. A responsivity of 1.35 A/W was attained at a wavelength of 450 nm when the device was fabricated using 61 J/cm² laser fluence. The WO₃-embedded PSi gas sensor synthesized at a 61 J/cm² energy fluence exhibited the highest CO gas sensitivity, with a 63 % response at 20.2 ppm.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116971"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Insights into optical and photoelectrical properties of copper biphthalocyanine for efficient optoelectronic applications","authors":"Ahmed R. Wassel ,&nbsp;M.A.Abd El-Ghaffar ,&nbsp;Ahmed M. El-Mahalawy","doi":"10.1016/j.optmat.2025.116966","DOIUrl":"10.1016/j.optmat.2025.116966","url":null,"abstract":"<div><div>A novel copper biphthalocyanine (CuPc₂) compound was synthesized using a facile straightforward approach. Thermally deposited CuPc₂ thin films are prepared under vacuum at room temperature. The crystal and molecular structures of the deposited films relative to powder have been investigated using XRD and FTIR spectroscopy, respectively. The nanostructured CuPc₂ films, as visualized microscopically via FE-SEM, possess uniform surface morphology and low roughness. The optical properties of the deposited films are evaluated spectrophotometrically in the UV–vis–NIR region. The conventional Q and B-bands were identified with onset and fundamental energy gap of about 1.61, and 2.85 eV, respectively, and confirmed the α-molecular phase with small Urbach energy ∼43.5 meV. The dispersion characteristics were analyzed using the single oscillator and Sellmeier models. The optical dielectric, energy loss, and optical conductivity are deducted and interpreted. The nonlinear optical susceptibility, refractive index, and absorption coefficient were extracted and compared to many other metallophthalocyanines films. The present films exhibit exhibits abnormal PL emission spectrum along the visible region with white point CIE coordinates. Furthermore, the measured current-voltage relation of the designed Au/CuPc₂/p-Si/Al heterojunction is analyzed in detail. The ideality factor, reverse current, barrier height, series resistance shunt resistance, and interface state density are deduced. The photodetection features of the designed heterojunction are evaluated under different intensities (20–100) mW/cm². Fast and efficient responsive performance with high linearity is achieved by the present heterojunction; besides it offers the validity of usage under very low power consumptions (−0.05 V).</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116966"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Probing the peculiar emission behaviors of c-Sapphire wafer and β-Ga2O3/c-Sapphire via hard X-ray nanoprobe","authors":"Sunny Saurabh ,&nbsp;Umeshwar Reddy Nallasani ,&nbsp;Tzu-Chi Huang ,&nbsp;Chun-Yen Lin ,&nbsp;Yi-Chen Li ,&nbsp;Yu-Hao Wu ,&nbsp;Chien-Yu Lee ,&nbsp;Bo-Yi Chen ,&nbsp;Gung-Chian Yin ,&nbsp;Mau-Tsu Tang ,&nbsp;Wu-Ching Chou ,&nbsp;Bi-Hsuan Lin","doi":"10.1016/j.optmat.2025.116975","DOIUrl":"10.1016/j.optmat.2025.116975","url":null,"abstract":"<div><div>We report the intriguing phenomena of evolution of color centers (F and F⁺) using time-dependent X-ray excited optical luminescence (XEOL) in c-plane Sapphire wafer, β-Ga₂O₃/c-Sapphire and GaSe/β-Ga₂O₃/c-Sapphire. The increasing emission intensity of F⁺ and F-color centers over time indicates the formation of new color centers by continuous exposure to X-ray irradiation. These oxygen vacancy defect states remained even after having layer of epitaxial thin film of β-Ga₂O₃, and subsequent GaSe of sub μm thickness on top due to high penetration depth of X-ray. Interestingly, defect states of β-Ga₂O₃ decrease with time suggesting passivation of defect states induced by long term exposure to X-ray radiation. Also, we demonstrated the effect of long term X-ray irradiation using XEOL map, revealing spatial variation in defect state emission intensities. Time-resolved XEOL was used to measure dynamics of luminescence decay of F⁺ color center and defect state emission of Ga₂O₃.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116975"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143726291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A comparative study of sol-gel and electrodeposition methods used in the synthesis of Cu2FeSnS4 thin films","authors":"S. Drissi ,&nbsp;A. El Kissani ,&nbsp;A. Abali ,&nbsp;D. Elhaj ,&nbsp;S. Elmassi ,&nbsp;H. Badr ,&nbsp;H. Dahabi ,&nbsp;M. Tair ,&nbsp;L. Nkhaili ,&nbsp;K. El Assali ,&nbsp;A. Outzourhit","doi":"10.1016/j.optmat.2025.116972","DOIUrl":"10.1016/j.optmat.2025.116972","url":null,"abstract":"<div><div>This research aims to develop copper iron tin sulfide using two distinct chemical methods, sol-gel and electrodeposition. A comparative analysis is performed to evaluate and contrast the results obtained from each method. The X-ray Diffraction results indicate that all films exhibit a preferential orientation along the (112) plane, approving the presence of the tetragonal stannite phase with space group I-42m for both fabrication techniques. Raman Spectroscopy confirms the phase identified by X-ray Diffraction. Scanning Electron Microscopy showed a uniformed and dense surface. Energy Dispersive Spectroscopy confirmed the presence of all elements present in the structure. The optical analysis for both fabrication methods confirms that the thin films exhibit absorption coefficients greater than 10⁴ cm⁻¹ and band gap energies of 1.43 eV and 1.5 eV for the electrodeposition and sol-gel techniques respectively, which are indicative of good light absorption characteristics. Hall Effect measurements revealed a p-type conductivity in CFTS thin films prepared by the sol-gel method, with a carrier concentration of 3.85 10¹⁶, an electrical mobility of 1.42 10⁻² cm²/V.s, and a sheet resistivity of 3.31 Ω cm. The simulation of the efficiency of solar cells based on CFTS absorbers prepared by both methods was performed using the SCAPS-1D simulator, and theoretical J-V characteristics were generated. Overall, this research establishes the effectiveness of this thin films as viable absorbers in solar cells.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116972"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143680678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase evolution and thermally enhanced Red-NIR upconversion luminescence in ZrO2:Yb3+/Tm3+","authors":"Rui Zhu,&nbsp;Tingting Li,&nbsp;Jiahui Ren,&nbsp;Mengzhen Jia,&nbsp;Puyan Hao,&nbsp;Mandong Zhai,&nbsp;Hongyan Gao,&nbsp;Xiaoqi Zhao","doi":"10.1016/j.optmat.2025.116967","DOIUrl":"10.1016/j.optmat.2025.116967","url":null,"abstract":"<div><div>The near-infrared (NIR) luminescence of lanthanide ions shows important application potential in biological imaging owing to its good tissue penetration ability and less biological tissue photodamage in comparison to visible luminescence. However, at present, the luminescence intensity of lanthanide-doped NIR luminescent materials is generally low, which greatly restricts their development in bioimaging application. In this work, NIR-emitted ZrO₂:Yb³⁺/Tm³⁺ sample was synthesized by urea-assisted co-precipitation method. The crystal phase evolution process and luminescence properties of ZrO₂:Yb³⁺/Tm³⁺ sample were precisely controlled by lanthanide ions doping. A 2.3-fold enhancement of the upconversion emission was recorded for the ZrO₂:Yb³⁺/Tm³⁺ sample as the temperature was increased from 25 °C to 225 °C because of the phonon-assisted electron population processes at specific energy levels. Our research results may inspire new ideas for developing thermally enhanced lanthanide-doped upconversion materials with high emission intensities.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116967"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143685191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Complex index of refraction of MBE grown 1 eV GaInAsNSb dilute nitride layers as a function of thermal annealing","authors":"M. Gabás ,&nbsp;E. Blanco ,&nbsp;I. Lombardero ,&nbsp;P.F. Palacios ,&nbsp;I. García ,&nbsp;N. Miyashita ,&nbsp;Y. Okada ,&nbsp;M. Domínguez ,&nbsp;C. Algora","doi":"10.1016/j.optmat.2025.116960","DOIUrl":"10.1016/j.optmat.2025.116960","url":null,"abstract":"<div><div>In this work, 1 eV GaInNAsSb layers with different thickness have been annealed to study the impact that the thermal treatments have on their optical properties. For such purpose, GaInNAsSb layers with thicknesses of 0.2, 1 and 3 μm were grown lattice-matched onto GaAs substrates. Each epiwafer was cut into four quarters: one quarter was left as the as-grown sample, another one was submitted to a Rapid Thermal Annealing, the third quarter was annealed in a Metal Organic Vapor Phase Epitaxy reactor, and the fourth one was submitted to the first annealing followed by the second one. The complex index of refraction of the samples has been determined using spectroscopic ellipsometry along a wide spectral range (250–2500 nm). The optical properties of the 1 and 3 μm as grown layers do not differ very much between them, while the 0.2 μm layer exhibits a particular behavior that can be correlated with similarities/differences in the dilute nitride layer composition. The two types of thermal annealing affect in a different way to both composition and optical properties of the GaInNAsSb layers depending on their thicknesses. Finally, the obtained refractive indices and extinction coefficients have been validated by simulating the experimental reflectance of the semiconductor structures. Therefore, the determination of the optical properties (ranging from 250 to 2500 nm) of 1 eV GaInNAsSb we present here, allows the simulation and optimization of optoelectronic devices incorporating this dilute nitride.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116960"},"PeriodicalIF":3.8,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143697190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature sensitivity enhancement of OFDR fibers based on PDMS/Glycerol films","authors":"Peng Li,&nbsp;Chuanyin Shang,&nbsp;Zhengrong Tong,&nbsp;Hao Wang","doi":"10.1016/j.optmat.2025.116940","DOIUrl":"10.1016/j.optmat.2025.116940","url":null,"abstract":"<div><div>Aiming at improving the sensitivity of OFDR distributed optical fiber temperature sensors, this paper introduces the design of a temperature sensor with a new structure. In this design, PDMS/Glycerol is coated on the surface of a SMF as a temperature-sensitive material. Within the temperature range from 30 °C to 150 °C, this sensor exhibits excellent temperature stability and repeatability, with an average relative deviation of only 0.16%, and its performance remains stable during temperature cycles. Furthermore, the temperature sensitivity of the sensor is 18.84 pm/°C, representing an 87% improvement compared to that of SMF.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116940"},"PeriodicalIF":3.8,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143747957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimal As/Ga flux ratio for low-temperature overgrowth of InAs quantum dots dependent on the GaAs overgrowth rate","authors":"Sergey V. Balakirev ,&nbsp;Ivan S. Makhov ,&nbsp;Danil V. Kirichenko ,&nbsp;Denis D. Dukhan ,&nbsp;Natalia E. Chernenko ,&nbsp;Nikita A. Shandyba ,&nbsp;Ilya V. Pankov ,&nbsp;Mikhail M. Eremenko ,&nbsp;Alexey M. Nadtochiy ,&nbsp;Natalia V. Kryzhanovskaya ,&nbsp;Alexey E. Zhukov ,&nbsp;Maxim S. Solodovnik","doi":"10.1016/j.optmat.2025.116964","DOIUrl":"10.1016/j.optmat.2025.116964","url":null,"abstract":"<div><div>We reveal a strong dependence of optical properties of InAs quantum dots (QDs) on the As/Ga flux ratio used during the overgrowth with a low-temperature GaAs layer. Evaluating various characteristics of the photoluminescence spectra, we determine an optimal As/Ga flux ratio which allows formation of QDs emitting at the longest wavelengths, with the highest intensity and the largest energy separation of quantum states. The optimal As/Ga flux ratio depends on the overgrowth rate, with a value of ∼4 for slow overgrowth, decreasing to ∼2 for rapid overgrowth. This trend suggests that at higher overgrowth rates, high arsenic flux increases the probability of non-radiative defects, presumably due to the capture of excess arsenic atoms that violate the stoichiometry of the structure and create additional centers for non-radiative recombination of charge carriers. For each overgrowth rate, the optical properties of QDs deteriorate under non-optimal As/Ga flux ratios because of their enhanced decomposition during the overgrowth. Additionally, we observed that increasing the overgrowth rate leads to a saturation of the QD emission wavelength at ∼1220 nm (300 K), which cannot be further extended by adjusting the As/Ga flux ratio.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116964"},"PeriodicalIF":3.8,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143785421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}