Optical Materials最新文献

{"title":"Structural, optical and electrical properties of a mixed valence bismuth oxide δ-Bi2O3+x prepared by solid-liquid reaction","authors":"A. Agnaou,&nbsp;W. Mhaira,&nbsp;R. Essalim,&nbsp;B. Tanouti,&nbsp;A. Ammar","doi":"10.1016/j.optmat.2025.117162","DOIUrl":"10.1016/j.optmat.2025.117162","url":null,"abstract":"<div><div>Nano-metric δ-Bi₂O_3+x powders was successfully synthesized by solid-liquid reaction, at around room temperature. The resulting powders underwent comprehensive characterization using XRD, Raman, FT-IR, DTA/TG, SEM-EDS, and UV–vis techniques. X-ray diffraction (XRD) analysis confirms the existence of a cubic phase iso-structural to δ-Bi₂O₃. Chemical analysis shows that the obtained compound is bismuth oxide with mixed valence (trivalent and pentavalent bismuth). Heat treatment at increasing temperature in air shows that the synthesized compound is successively transformed into three crystalline forms isomorph to β- Bi₂O₃, α- Bi₂O₃ and γ- Bi₂O₃. The results of the DTA and TGA performed in air are in agreement with the XRD study. The synthesized powders exhibited a morphology characterized by spherical nanoparticle. UV–vis diffuse reflectance spectroscopy (DRS) indicates that the δ-Bi₂O_3+x phase has a bandgap energy of 1.86 eV. The highest electrical conductivity is obtained at 280 °C with a value close to 4 × 10⁻³ S cm⁻¹.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"165 ","pages":"Article 117162"},"PeriodicalIF":3.8,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144084501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ni/ZnO Schottky photodiodes for high-performance ultraviolet detection: Influence of precursor molarity on structural and electrical properties","authors":"Swati Pujar,&nbsp;Gowrish Rao K","doi":"10.1016/j.optmat.2025.117160","DOIUrl":"10.1016/j.optmat.2025.117160","url":null,"abstract":"<div><div>In this study, ZnO thin films were spin coated on FTO coated glass substrates with varying precursor molarities (0.3 M, 0.5 M, 0.7 M, and 0.9 M). The impact of molarity on the structural, morphological, optical, and electrical properties of the films was comprehensively investigated. X-ray diffraction (XRD) patterns confirmed the hexagonal wurtzite structure of the films, with optimal crystallite size and reduced dislocation density for 0.7 M films. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) revealed uniform film growth with roughness values ranging from 4.6 nm to 9.2 nm. UV–visible spectroscopy showed an absorption edge in the near UV region. Schottky diodes were fabricated using Ni as the top contact. The I–V characteristics showed non-linear behaviour with a rectification of 2 orders for 0.5 M and 0.7 M films. The photoresponse studies indicated significant photocurrent enhancement under UV illumination, with the 0.7 M sample exhibiting a responsivity of 3.5 A/W and detectivity of <span><math><mrow><mn>2</mn><mo>×</mo><msup><mn>10</mn><mn>11</mn></msup></mrow></math></span> Jones. Transient response analysis demonstrated fast switching behaviour with rise and decay times of approximately 3 and 7 s, respectively.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"165 ","pages":"Article 117160"},"PeriodicalIF":3.8,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144071206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fe-dependent optical properties of peralkaline soda aluminosilicate glasses: a combined Raman and photoluminescence study","authors":"Michele Cassetta ,&nbsp;Anna Safonova ,&nbsp;Gino Mariotto ,&nbsp;Nicola Daldosso ,&nbsp;Shujie You ,&nbsp;Pawan Kumar ,&nbsp;Alberto Vomiero ,&nbsp;Mohamed Yousri Ben Zaied ,&nbsp;Mongi Bouaicha ,&nbsp;Francesco Enrichi","doi":"10.1016/j.optmat.2025.117161","DOIUrl":"10.1016/j.optmat.2025.117161","url":null,"abstract":"<div><div>This study investigates the influence of iron on the optical properties of peralkaline soda aluminosilicate glasses (NASF), focusing on the interplay between glass structure and optical behavior. Fe doping significantly affects the glass network, altering both its structural connectivity and optical properties. Raman spectroscopy reveals that Fe modifies the glass structure by increasing non-bridging oxygens (NBOs), reducing network connectivity. For the highest FeO_tot concentration of 8.2 at.%, a more polymerized structural reorganization occurs due to iron self-compensation. Optical analysis shows that Fe incorporation increases the optical absorption and shifts the absorption edge to higher wavelengths. Tauc plot calculations reveal a decrease in the optical bandgap from 4.0 to 3.2 eV, while the Urbach energy indicates an increase of structural disorder. The photoluminescence (PL) excitation and emission related to Fe³⁺ energy levels is observed, with a broad red emission peak at 700 nm, decreasing with Fe concentration in relation to higher defectivity and clustering. A detailed lifetime analysis shows long lasting tails of the order of milliseconds, also decreasing with Fe content due to non-radiative recombinations and quenching.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"165 ","pages":"Article 117161"},"PeriodicalIF":3.8,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design, research progress and prospects of high temperature infrared/radar compatible stealth materials","authors":"Yuanjia Xia,&nbsp;Guobing Chen,&nbsp;Zhen Zhang,&nbsp;Shuang Zhao,&nbsp;Zhifang Fei,&nbsp;Kunfeng Li,&nbsp;Xiaoxiao Xia,&nbsp;Zichun Yang","doi":"10.1016/j.optmat.2025.117156","DOIUrl":"10.1016/j.optmat.2025.117156","url":null,"abstract":"<div><div>Multispectrum-compatible stealth materials, and in particular, infrared/radar compatible materials, constitute one of the most important research areas in the stealth technology field. Although such materials have been extensively investigated at room temperature, those intended for the high temperature power parts of weapons and equipment have recently gained increasing attention. This study first analyses and summarises several typical conventional infrared/radar compatible stealth materials intended for high temperature conditions from a structural design and mechanistic viewpoint, then briefly summarises the research status of infrared/radar compatible stealth metamaterials applicable under high temperature conditions, and finally offers insights into future development directions.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"165 ","pages":"Article 117156"},"PeriodicalIF":3.8,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144071207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Up-conversion luminescence study of thermally stable Sr2ZnSi2O7: Er3+ phosphors","authors":"Seema ,&nbsp;A.S. Rao ,&nbsp;Sarita Baghel","doi":"10.1016/j.optmat.2025.117158","DOIUrl":"10.1016/j.optmat.2025.117158","url":null,"abstract":"<div><div>Current research on rare-earth-doped phosphors often faces challenges related to thermal stability, energy transfer efficiency, and color purity, which limit their practical application in lighting technologies. In this study, we address these issues by synthesizing a series of thermally stable Sr₂ZnSi₂O₇: Er³⁺ (SZSi: Er³⁺) phosphors via the high-temperature solid-state reaction method. X-ray diffraction (XRD) confirmed the formation of a tetragonal crystalline phase (space group: P-421m) however, scanning electron microscopy (SEM) revealed comprehensive surface morphology and particle size distribution of irregularly shaped particles. Diffuse reflectance spectroscopy (DRS) was used to calculate the optical band gap of the synthesized phosphors. The photoluminescence (PL) studies demonstrated efficient near-ultraviolet (n-UV) excitation (λ_ex = 378 nm). Energy transfer analysis using the Dexter theory and the Inokuti-Hirayama (I–H) model indicated that dipole-dipole interactions dominate the energy transfer process between Er³⁺-Er³⁺ ions. The optimized SZSi: Er³⁺ phosphor exhibited high color purity (96 %) with Commission Internationale de l’Eclairage (CIE) chromaticity coordinates of (0.3279, 0.6651) under λ_ex = 378 nm. The upconversion luminescence intensity at 661 nm [⁴F_9/2 → ⁴I_15/2 (Er³⁺)], when excited at 980 nm, was enhanced with a higher magnitude when increasing the doping concentration from 1 to 10 mol% of Er³⁺ ions. The dependence of the laser pump power concerning the upconversion luminescence intensity depicts that the emission at 661 nm is due to a two-photon absorption process. In addition, under 980 nm, visible upconversion emissions (in the green and red regions) were observed, attributed to a two-photon absorption mechanism involving intermediate energy levels of Er³⁺ ions. Thermal quenching analysis demonstrated a moderate decrease in emission intensity (∼24 % at 100 °C and ∼36 % at 150 °C), suggesting reasonable thermal stability. These findings underscore the potential of Er³⁺-activated Sr₂ZnSi₂O₇ phosphors in non-display photonic applications, such as bioimaging, anti-counterfeiting, or infrared-pumped display technologies.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"165 ","pages":"Article 117158"},"PeriodicalIF":3.8,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144069105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Room-temperature mid-wave infrared InAs/GaSb type-II superlattice photodetectors enhanced by ZnS anti-reflection coating","authors":"Lingze Yao ,&nbsp;Yifan Shan ,&nbsp;Ruoyu Xie ,&nbsp;Qiuyao Pang ,&nbsp;Ye Zhang ,&nbsp;Mengqi Yang ,&nbsp;Dongwei Jiang ,&nbsp;Hongyue Hao ,&nbsp;Guowei Wang ,&nbsp;Yingqiang Xu ,&nbsp;Chengao Yang ,&nbsp;Donghai Wu ,&nbsp;Haiqiao Ni ,&nbsp;Wengang Bi ,&nbsp;Zhichuan Niu","doi":"10.1016/j.optmat.2025.117155","DOIUrl":"10.1016/j.optmat.2025.117155","url":null,"abstract":"<div><div>Achieving a high signal-to-noise ratio is crucial for room-temperature mid-wave infrared (MWIR) InAs/GaSb type-II superlattice photodetectors. Although photon absorption can be improved by increasing the thickness of the absorber, the contradiction between the low absorption coefficient compared to the bulk material and the carrier diffusion length limits the further improvement of quantum efficiency. Here, we report a zinc sulfide (ZnS) anti-reflection (AR) coating-enhanced room-temperature MWIR pπMn photodetector based on InAs/GaSb type-II superlattice for carbon monoxide detection, where a ZnS AR layer integrated with buried electrodes is proposed that warrants a low-reflectivity surface with minimal additional processing cost, thereby improving the photon absorption without compromising the electrical properties. Near the cutoff wavelength, the optimized ZnS layer is further demonstrated to improve the utilization of low-energy photons. Consequently, integrating with the ZnS layer, the photodetector operating at room temperature exhibits a dark current density of 0.34 A/cm² and a quantum efficiency of 36 % at −50 mV bias, leading to a responsivity of 1.31 A/W and a specific detectivity of 2.8 × 10⁹ cm Hz^1/2/W at 4.6 μm.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"165 ","pages":"Article 117155"},"PeriodicalIF":3.8,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature-dependent Sellmeier equations of UV nonlinear optical crystal NaSr3Be3B3O9F4","authors":"Shuangyue Shang ,&nbsp;Lei Bai ,&nbsp;Lirong Wang ,&nbsp;Jiajian Ning ,&nbsp;Tong Wu ,&nbsp;Tianhong Huang ,&nbsp;Lijuan Liu ,&nbsp;Xiaoyang Wang","doi":"10.1016/j.optmat.2025.117157","DOIUrl":"10.1016/j.optmat.2025.117157","url":null,"abstract":"<div><div>NaSr₃Be₃B₃O₉F₄ (NSBBF) is a highly promising ultraviolet (UV) nonlinear optical crystal for generating high-power 266 nm laser light. However, the impact of temperature rise on its refractive indices during high-power operation remains poorly understood, which can lead to phase mismatch and reduced conversion efficiency. In this study, the principal refractive indices of NSBBF were precisely measured using the minimum deviation method across a wavelength range of 0.253 μm–1.014 μm at temperatures of 25 °C, 50 °C, 80 °C, 100 °C, 120 °C, and 150 °C. The thermal refractive index coefficients were fitted as a function of wavelength, and temperature-dependent Sellmeier equations were derived. Predictions of phase-matching angles based on these equations were experimentally validated through fourth harmonic generation experiments. These findings provide crucial insights for the thermal design and optimization of NSBBF-based frequency conversion devices, enabling higher-power laser generation.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"165 ","pages":"Article 117157"},"PeriodicalIF":3.8,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144084502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transformation of f-f absorption bands of holmium ions in Ho0.75Nd0.25Fe3(BO3)4 crystal during spin-reorientation transition","authors":"A.V. Malakhovskii,&nbsp;A.L. Sukhachev,&nbsp;V.V. Sokolov,&nbsp;I.A. Gudim","doi":"10.1016/j.optmat.2025.117150","DOIUrl":"10.1016/j.optmat.2025.117150","url":null,"abstract":"<div><div>Polarized absorption spectra of the Ho_0.75Nd_0.25Fe₃(BO₃)₄ crystal in the region of ⁵<em>I</em>₈→⁵<em>F</em>₅, ⁵<em>S</em>₂ + ⁵<em>F</em>₄, ⁵<em>F</em>₃ and ⁵<em>F</em>₂ absorption bands of Ho ions were studied as a function of temperature in the range of 5–20 K. The absorption spectra were decomposed into Lorentzian or Gaussian components. Below 203 K, the local symmetry of the holmium ion is <em>C</em>₂. However, an analysis of the polarization of the absorption lines from the point of view of the selection rules showed that in the easy-axis state of the crystal (<em>T</em> &lt; <em>T</em>_R = 6.9 K), the local symmetry of the holmium ion is close to <em>D</em>₃. At <em>T</em> &gt; <em>T</em>_R, a distortion of the local symmetry appears, which increases with increasing temperature. Shifts in the positions of absorption lines are observed at the spin-reorientation transition. The shifts are different for different lines. This means that the local magnetic anisotropy of the holmium ion, the Ho–Fe exchange energy, and the local crystal field are different in different excited states of holmium. Significant and different changes in the intensity of absorption lines depending on temperature were observed both during the reorientation transition and above it, which is a consequence of changes of the local crystal field in excited states with temperature.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"165 ","pages":"Article 117150"},"PeriodicalIF":3.8,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144084500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Third-order nonlinear optical properties of epsilon-near-zero thin films constructed by amine- and thione-substituted triazole","authors":"Yali Hu,&nbsp;Tingbin Li","doi":"10.1016/j.optmat.2025.117149","DOIUrl":"10.1016/j.optmat.2025.117149","url":null,"abstract":"<div><div>The new class of materials with a vanishing permittivity, known as epsilon-near-zero (ENZ) materials, has been reported to exhibit unprecedented ultrafast third-order nonlinear efficiencies within sub-wavelength propagation lengths. Organic ENZ thin films have arisen as promising materials to new nanophotonic architectures in integrated optics and metasurface devices. As a kind of donor-π-acceptor (D-π-A) molecules, the study of third-order nonlinear optical (NLO) properties of organic ENZ thin films constructed by amine- and thione-substituted triazole molecules is necessary to get success in nanophotonic devices, which is practically absent in the literature. In this work, amine- and thione-substituted triazole molecules: 4-furfuralideneamino-3-methyl-4,5-dihydro-1<em>H</em>-1,2,4-triazole-5-thione (C₈H₈N₄OS, FMTT) and 4-benzylideneamino-3-methyl-4,5-dihydro-1<em>H</em>-1,2,4-triazole-5-thione (C₁₀H₁₀N₄OS, BMTT) have been synthesized and characterized by X-ray single crystal diffraction. The liquid phase epitaxy (LPE) method were used to fabricate their ENZ thin films on quartz substrates. Z-scan technique were used to analyze the third-order NLO properties of the ENZ thin films in picosecond regime at wavelength 532 nm and found their nonlinear refraction coefficient <span><math><mrow><msubsup><mi>n</mi><mn>2</mn><mi>I</mi></msubsup></mrow></math></span> value reaching the order of 10⁻¹² m²/W. The molecular orbital, total density-of-state and molecular second hyperpolarizability γ value were calculated by time-dependent density functional theory (TDDFT). These findings open the path toward search for new ENZ enhancement organic NLO materials.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"165 ","pages":"Article 117149"},"PeriodicalIF":3.8,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144084389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tuning microstructure and optoelectronic performance in AZO/Ag/AZO and AZO/Cu/AZO multilayers: A comparative investigation","authors":"Djelloul Mendil ,&nbsp;Tahar Touam ,&nbsp;Azeddine Chelouche ,&nbsp;Atmane Djermoune ,&nbsp;Salim Ouhenia ,&nbsp;Djamel Djouadi ,&nbsp;Fatiha Challali","doi":"10.1016/j.optmat.2025.117154","DOIUrl":"10.1016/j.optmat.2025.117154","url":null,"abstract":"<div><div>The effects of AZO layer thickness (25–65 nm) and metal type (Ag: 10 nm, Cu: 13 nm) on the microstructural and optoelectronic properties of AZO/Ag/AZO and AZO/Cu/AZO multilayers were investigated. X-ray diffraction (XRD) confirmed improved crystallinity and crystallite size with increasing AZO thickness, with AZO/Ag/AZO showing superior crystal quality. Transmission electron microscopy (TEM) verified uniform thickness and well-defined interfaces. Field emission scanning electron microscopy (FESEM) revealed that surface morphology and grain size were strongly affected by AZO thickness and metal type. Transmittance spectra showed that thicker AZO layers reduced visible transmittance, with AZO/Cu/AZO exhibiting better NIR performance. Photoluminescence (PL) spectra indicated a decrease in emission intensity, a slight UV redshift, and faster decay in AZO/Ag/AZO. Hall-effect measurements demonstrated that AZO thickness and metal type influence optoelectronic performance, with AZO/Ag/AZO achieving the highest figure of merit of 3.66 × 10⁻⁴ Ω⁻¹ at 25 nm AZO thickness, highlighting its optoelectronic potential.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"165 ","pages":"Article 117154"},"PeriodicalIF":3.8,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}