Optical Materials最新文献

{"title":"Passively mode-locking fiber lasers for generating high repetition frequency pulse based on MoWSe2 saturable absorbers","authors":"Fei Wang ,&nbsp;Shixian Sun ,&nbsp;Xiangchen Zhang ,&nbsp;Hao Tan ,&nbsp;Guangzhao Zhu ,&nbsp;Weijie Xu ,&nbsp;Yajun Huang ,&nbsp;Mingzhi Sun ,&nbsp;Yuming Jia ,&nbsp;Zhao Li ,&nbsp;Caixun Bai ,&nbsp;Wenfei Zhang ,&nbsp;Cheng Lu ,&nbsp;Huanian Zhang ,&nbsp;Guomei Wang ,&nbsp;Shenggui Fu","doi":"10.1016/j.optmat.2025.117054","DOIUrl":"10.1016/j.optmat.2025.117054","url":null,"abstract":"<div><div>Transition metal dichalcogenides (TMDs) have increasingly attracted the interest of researchers due to their exceptional physical and chemical properties and broad application prospects. Currently, research on the application potential of the novel ternary TMD alloy MoWSe₂ as a saturable absorber (SA) is not yet mature. This artical achieves mode-locking for the first time after implementing Q-switching in MoWSe₂ SA. This study employed the liquid-phase exfoliation (LPE) method to fabricate a high-quality MoWSe₂ SA with a modulation depth of 7.9 % and a saturation intensity of 14.7 MW/cm². Stable conventional solitons (CS) and harmonic mode-locking (HML) of multiple orders were achieved. The highest order of HML reached the 86th order, with a maximum repetition frequency of 374.8 MHz. This represents the highest repetition frequency achieved to date in fiber lasers based on a MoWSe₂ SA. The results show that MoWSe₂ SA exhibits excellent nonlinear optical modulation performance, which lays the foundation for its role in advancing academic exploration and innovation in engineering practice in the field of ultrafast photonics.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117054"},"PeriodicalIF":3.8,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143834807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing B2O3–Bi2O3–K2O glass via Al2O3 doping: Structural, thermal, optical absorption, elastic moduli, and γ-ray attenuation behavior","authors":"Abely E. Mwakuna ,&nbsp;K. Samatha ,&nbsp;Reddipalli Trisanjya ,&nbsp;R.K.N.R. Manepalli","doi":"10.1016/j.optmat.2025.117053","DOIUrl":"10.1016/j.optmat.2025.117053","url":null,"abstract":"<div><div>Utilizing the thermal fusion and rapid cooling technique, AKB glasses with the chemical formula (65-x)B₂O₃–15Bi₂O₃–20K₂O-xAl₂O₃ (0.0 ≤ x ≤ 1.2 mol%) were synthesized to systematically examine the role of Al₂O₃ in enhancing the structural, thermal, optical absorption, elastic moduli, and γ-ray attenuation behavior. The non-crystalline structure of the glasses was affirmed via XRD analysis. FTIR spectroscopy revealed that the incorporation of Al₂O₃ up to 0.6 mol% promotes the transformation of BO₃ units into BO₄ units, facilitating the development of additional non-bridging oxygen sites. However, beyond 0.6 mol% Al₂O₃, the formation of [AlO₄]^- units becomes more dominant compared to the highly distorted [AlO₆]^3- units. These [AlO₄]^- units interact with non-bridging oxygen atoms, facilitating charge stabilization and enhancing cross-linking within the glass network. A rise in density accompanied by a decline in molar volume, suggests a compaction of the glass network with increasing Al₂O₃ concentration. The optical band gap exhibited a decreasing trend up to 0.6 mol% Al₂O₃, indicating an increase in structural disorder. Nevertheless, for Al₂O₃ concentrations exceeding 0.6 mol%, the optical band gap increased, suggesting a transition toward a more ordered and cross-linked glass structure. DSC analysis further confirmed enhanced thermal stability, with the highest glass transition temperature of 337.556 °C occurring at 0.3 mol% Al₂O₃. The Makishima-Mackenzie model demonstrated an improvement in mechanical properties with Al₂O₃ doping, primarily due to the increase in mean bonding energy density. This enhancement strengthens the glass network, resulting in greater rigidity, superior mechanical stability, and improved overall structural integrity. γ-ray attenuation analysis revealed that the AKB glass samples exhibit superior attenuation efficiency compared to widely used commercial shielding materials, including RS-253-G1 and RS-360. While AKB glasses possess a half-value layer greater than 1.389 cm, exceeding that of RS-520, they still demonstrate superior shielding capabilities relative to concrete and other commercial glass alternatives. Among the AKB glass samples, the AKB0.3 (0.3 mol% Al₂O₃) composition exhibited outstanding thermal stability, as indicated by its higher glass transition temperature. This property makes it highly suitable for radiation shielding at 0.662 MeV, where thermal stability is essential for ensuring optimal performance.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117053"},"PeriodicalIF":3.8,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143834811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photocatalytic properties of C, N-doped TiO2 films prepared via ion-assisted RF magnetron sputtering","authors":"Jeng-Yu Lee ,&nbsp;Jin-Cherng Hsu ,&nbsp;Kuang-Chang Pien ,&nbsp;Yung-Shin Sun ,&nbsp;Hsing-Yu Wu","doi":"10.1016/j.optmat.2025.117061","DOIUrl":"10.1016/j.optmat.2025.117061","url":null,"abstract":"<div><div>Titanium dioxide (TiO₂) is considered one of the most valuable photocatalytic materials due to its unique properties and versatility in various applications. C- or <em>N</em>-doped TiO₂ has been shown to exhibit narrowed band gaps, but codoping of C and N into TiO₂ has seldom been studied. In this study, C, <em>N</em>-doped TiO₂ films were prepared using ion-assisted RF magnetron sputtering. The anatase phase of these films was attained under a substrate temperature of 500 °C in the plasma containing a mixture of CO₂ and N₂. The prepared samples were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis spectrophotometer, X-ray photoelectron spectroscopy (XPS), and methylene blue degradation experiments. XRD analysis indicated that the crystallinity of the TiO₂ film was weakened when <em>N</em>-doped, while the anatase phase transitioned to rutile after C-doped. XPS analysis revealed the presence of the atomic β-N state in the film, which contributed to the narrowing of its band gap. In the methylene blue degradation experiments, the C, <em>N</em>-doped TiO₂ film prepared with ion-assisted deposition showed the best visible light (460 nm) photocatalytic activity, in accordance with the reduction in its optical band gap. This study demonstrated that the proposed process is effective in reducing the band gap and enhancing the photocatalytic activity of TiO₂ films.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117061"},"PeriodicalIF":3.8,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143838988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Narrowing of lithium niobate band gap by fabricating Ag/MWCNT/LiNbO3 nanocomposites for solar—Driven photocatalysis applications","authors":"Chawki Awada,&nbsp;Mohd Al Saleh Alothoum,&nbsp;Marwah Al Ghareeb,&nbsp;Bakhtiar Ul Haq,&nbsp;Adil Alshoaibi,&nbsp;Abdullah Alshehab,&nbsp;Abdullah Aljaafari","doi":"10.1016/j.optmat.2025.117048","DOIUrl":"10.1016/j.optmat.2025.117048","url":null,"abstract":"<div><div>In this work, we report for the first time the effects of silver nanoparticles (Ag NPs) and Multiwall carbon nanotubes (MWCNT) loading on the structural and optical properties of LiNbO₃ (LN). Ag NPs and MWCNT were loaded using hydrothermal synthesis’ method of LN. The structural and optical properties of nanocomposites were studied using TEM, XRD, EDX, UV–Vis, Raman, and PL. The incorporation of Ag NPs and MWCNT showed a significant band gap narrowing. The band gap values extracted using Tauc plot equation for pure LN, Ag_0.05/LN, Ag_0.05/CNT_0.01/LN, and Ag_0.05/CNT_0.05/LN are 3.73, 3.25, 3.15, and 2.85 eV, respectively. A good correlation between PL and band gap values confirmed the synergetic effect between LN and Ag and MWCNT. The photocatalytic activities of Ag/CNT/LN nanocomposites were evaluated towards the photo-degradation of a complex organic dye such as reactive black 5 (RB5) under UV–visible light. The kinetic rate constant k was extracted with the values 3 × 10⁻³, 2.5 × 10⁻³,0.83 × 10⁻³, and 7.9 × 10⁻³ min⁻¹ for LN, Ag_0.05/LN, Ag_0.05/CNT_0.01/LN, and Ag_0.05/CNT_0.05/LN, respectively. It was confirmed that adding 5 % of Ag NPs and 5 % of MWCNT enhanced the photocatalytic activities of LN nanostructures. The lower values of k for Ag_0.05/LN and Ag_0.05/CNT_0.01/LN compared to LN and Ag_0.05/CNT_0.05/LN could be due to their large size and low crystallinity. The electronic structures and DOS of the nanocomposites were studied using density functional theory (DFT). The theoretical studies confirmed the narrowing band gap using different structures. The new nanocomposites will open the way for new solar-based applications.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117048"},"PeriodicalIF":3.8,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143864517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancement of luminescence via Mg substitution in self-activated Sr9(BN2)6","authors":"Yu Zhang ,&nbsp;Yizhi Ma ,&nbsp;Dahai Hu ,&nbsp;Ze Wang ,&nbsp;Surilig ,&nbsp;Narisu Bai ,&nbsp;Xinping Zhao ,&nbsp;Kefu Chao","doi":"10.1016/j.optmat.2025.117049","DOIUrl":"10.1016/j.optmat.2025.117049","url":null,"abstract":"<div><div>Commercially available phosphors rely heavily on rare earth (RE)-doped host materials, making the materials increasingly expensive. Addressing this challenge, we successfully developed novel RE-free self-activated phosphors Sr₉(BN₂)₆(SBN) and Sr₈Mg(BN₂)₆ (SMBN) through a simple one-step solid-state sintering process. Both possess the same cubic crystal structure. Replacing Sr²⁺ with Mg²⁺ ions effectively adjusts the vacancy, resulting in peculiar luminescence properties, such as blueshifting and broadening in the excitation peak, and high luminous efficiency in redshifted emission. It is speculated that the observed luminescence arises from the luminescent center formed by Sr1 and Sr2 vacancies (V_Sr1 and V_Sr2). The presence of Mg serves a dual purpose: it not only minimizes the trapping of electrons by intrinsic defects, improving the luminescence behavior, but also ameliorates the deliquescence of the SMBN sample when exposed to air, which is a guide to enhance the existing self-activated luminescent materials and explore new defect-related materials.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117049"},"PeriodicalIF":3.8,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143829593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth and spectral property of Er3+:Ca2.25Sr0.75NbGa3Si2O14 mixed crystal with broad 1.5–1.6 μm emission band","authors":"Dongfeng Bai ,&nbsp;Jianhua Huang ,&nbsp;Xinghong Gong ,&nbsp;Yanfu Lin ,&nbsp;Yidong Huang ,&nbsp;Yujin Chen","doi":"10.1016/j.optmat.2025.117050","DOIUrl":"10.1016/j.optmat.2025.117050","url":null,"abstract":"<div><div>An Er³⁺:Ca_2.25Sr_0.75NbGa₃Si₂O₁₄ crystal was grown by the Czochralski method. Based on the analysis of the crystal structure, the origin of the color centers in the crystal was explored, and then an appropriate annealing method was employed to eliminate them. Polarized spectral properties of the crystal were investigated at room temperature. The peak emission cross section of the crystal is 1.10 × 10⁻²⁰ cm² at 1532.4 nm for the <em>α</em> polarization. Due to the increment in structural diversity of Er³⁺ clusters caused by the random distribution of Ca²⁺ and Sr²⁺ at the same lattice site, the full width at half-maximum of the emission band in 1.5–1.6 μm is up to 64 nm in the crystal. The fluorescence lifetime of the ⁴I_13/2 multiplet of Er³⁺ in the crystal is 5.45 ms. The results indicate that the Er³⁺:Ca_2.25Sr_0.75NbGa₃Si₂O₁₄ crystal may be a promising gain medium for the ultra-short pulse and broadband tunable lasers in 1.5–1.6 μm.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117050"},"PeriodicalIF":3.8,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143829592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Integrated photon sensor based on Ti3C2Tx MXene film and microgroove Mach-Zehnder Interferometer","authors":"Pengyu Liu ,&nbsp;Jianmin Cui ,&nbsp;Huizhen Tan ,&nbsp;Shangbao Wu ,&nbsp;Yongchao Zeng ,&nbsp;Lihui Feng","doi":"10.1016/j.optmat.2025.117052","DOIUrl":"10.1016/j.optmat.2025.117052","url":null,"abstract":"<div><div>Optical waveguide refractive index (RI) sensors have significant potential in various environmental-monitoring fields. Given the limitations of waveguide materials, enhancing the sensitivity of the optical waveguide sensors requires materials functionalization. Moreover, the sensor structure requires a specialized design to enhance its sensitivity. In this study, a hybrid optical waveguide RI sensor was used fabricated by integrating a Ti3C2Tx MXene film with a Microgroove Mach–Zehnder Interferometer (MMZI). First, the sensor arm is etched to create a microgroove structure, which enhances the interaction between the sensor arm and the external environment. Second, the agglomeration of MXene was inhibited by vacuum filtration, resulting in a large-area, self-supporting MXene membranes. Finally, an MXene self-supporting film was prepared and precisely transferred to the microgroove of the sensing arm to create a wafer-level MXene-Based Composite Waveguide Sensors. The experimental results demonstrate a linear relationship between the light intensity drift of the sensing probe and the RI change with the sensor sensitivity measured at −738 dB/RIU and a linear correlation coefficient of 0.99758. Additionally, this study employed the density functional theory (DFT) to calculate the RI parameters of the MXene materials. This type of Composite Waveguide Sensors can be mass-produced using semiconductor processing technology and has broad applications in fields such as environmental monitoring.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117052"},"PeriodicalIF":3.8,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143845090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Charge transition level energies of the 1+, 2+, 3+, and 4+ 3dq transition metals; new insight and tutorial review","authors":"Pieter Dorenbos","doi":"10.1016/j.optmat.2025.117007","DOIUrl":"10.1016/j.optmat.2025.117007","url":null,"abstract":"<div><div>The defect levels of the 3<span><math><msup><mrow><mi>d</mi></mrow><mrow><mi>q</mi></mrow></msup></math></span> transition metals (TM) within the bandgap of compounds provide compounds with properties that are utilized in <em>e.g.</em> luminescence, lasers, photochromism, batteries, catalysis, semiconductors, biochemistry. Knowledge of the ground-state level locations, or equivalently the charge transition level (CTL) energies, or equivalently the vacuum-referred binding energies (VRBE), is important to understand or engineer performance. Despite 70 years of interest in the topic, understanding and controlling TM defect levels remains elusive. In this work, experimental data, theories developed, progress over time, and current status are reviewed, and new insights are presented. We will start with the classic theory, first for free-ion 3<span><math><msup><mrow><mi>d</mi></mrow><mrow><mi>q</mi></mrow></msup></math></span> TMs and then for TMs in inorganic compounds and organic complexes. The Slater–Condon <span><math><msup><mrow><mi>F</mi></mrow><mrow><mi>k</mi></mrow></msup></math></span>, the Racah <span><math><mi>A</mi></math></span>, <span><math><mi>B</mi></math></span>, and <span><math><mi>C</mi></math></span> parameters, the crystal field interaction, and the Tanabe–Sugano diagrams will be treated on a tutorial level. An expression reproducing the CTL energies relative to the vacuum level as a function of the number <span><math><mi>q</mi></math></span> of electrons in the 3<span><math><msup><mrow><mi>d</mi></mrow><mrow><mi>q</mi></mrow></msup></math></span> TMs will be derived. The expression contains five essential parameters related to the chemical shift, Racah parameters, the nephelauxetic effect, and the crystal field. Data on TMs of different valences in 18 chemical environments are collected from the literature. These are inorganic compounds ranging from wide-band-gap halides (F, Cl, Br), chalcogenides (O, S, Se), small-band-gap II–VI and III–V semiconductors, and two TM organic complexes. All provide octahedral or tetrahedral coordinated sites for the TM. Data from luminescence and absorption spectroscopy, deep-level transient spectroscopy, photocurrents, thermoluminescence, and electrochemistry are translated into CTL energies. Next, the derived expression is used to reproduce the CTL energies, providing the values of the five parameters for each compound. The parameters appear strongly related to each other and change predictably with the valence of the TM and the properties of the environment.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117007"},"PeriodicalIF":3.8,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143828233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thickness-dependent structure and transparent conducting properties of sputtered Ta lightly-doped ZnO films","authors":"Trang Thuy Thi Phan ,&nbsp;Oanh Kieu Truong Le ,&nbsp;Y Nhu Ngoc Duong ,&nbsp;Nhi Yen Vo Le ,&nbsp;Trieu Quang Vo ,&nbsp;Oanh Hoang Vo ,&nbsp;Thuy Dieu Thi Ung ,&nbsp;Thang Bach Phan ,&nbsp;Vinh Cao Tran ,&nbsp;Anh Tuan Thanh Pham","doi":"10.1016/j.optmat.2025.117045","DOIUrl":"10.1016/j.optmat.2025.117045","url":null,"abstract":"<div><div>Doping in ZnO emerges as an effective way to improve the performance of transparent electrodes. Since the radius of Ta and Zn are very close, substituting Zn with Ta does not introduce additional stress into the crystal network. Undoped ZnO and Ta-doped ZnO (TZO) films with different thicknesses were deposited on glass substrates by using magnetron sputtering. The effects of thickness on the structural, optical, and electrical properties of the films were studied. The results showed insignificantly differences in the structural and optical properties of the TZO films at different thicknesses. However, a remarkable change was observed in the electrical properties of TZO films, which was contributed by the formation of native defects (mainly oxygen vacancies). As a result, the TZO film deposited for 15 min corresponding to 670 nm in thickness possessed the highest values of carrier concentration and mobility due to the change of point defect states, which was confirmed by photoluminescence analysis.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117045"},"PeriodicalIF":3.8,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143829594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Manifesting the versatile properties of the Magnesium MOS diodes for optoelectronic applications","authors":"G. Alan Sibu ,&nbsp;V. Balasubramani ,&nbsp;P. Gayathri ,&nbsp;M. Aslam Manthrammel ,&nbsp;Mohd Shkir","doi":"10.1016/j.optmat.2025.117047","DOIUrl":"10.1016/j.optmat.2025.117047","url":null,"abstract":"<div><div>This pioneering study explores the thermally-induced morphological and optical transformations of spray pyrolyzed Magnesium oxide (MgO) thin films, tailored for metal-oxide-semiconductor (MOS) Schottky barrier diodes. By leveraging MgO's unique attributes, including its expansive band gap, tailored surface topography, and tuneable conductivity, we harness the material's potential for cutting-edge optoelectronic applications. Utilizing the cost-effective and widely available JNSP technique, we deposit large-area thin films with unparalleled uniformity. A comprehensive characterization of the coated thin films, conducted using advanced analytical tools such as XRD, UV, FE-SEM, EDX and XPS, reveals that an optimal substrate temperature of 450 °C yields enhanced structural, morphological, and optical properties. The fabricated MOS diode, incorporating the optimized MgO thin films, exhibit superior photodiode parameters, including a reduced ideality factor of 3.81 (under light condition) and 5.05 (in dark condition), an elevated barrier height of 0.73 eV (under light condition) and 0.71 eV (in dark condition), and a diminished leakage current. Notably, these diodes demonstrate a high photosensitivity of 48.96 %, a responsivity of 27.11 mA/W, a quantum efficiency of 1.05 %, and a detectivity of 5.31 × 10⁻⁹ Jones. These findings have far-reaching implications for the development of high-performance MOS Schottky barrier diode, poised to revolutionize the landscape of advanced optoelectronic and photovoltaic applications.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117047"},"PeriodicalIF":3.8,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143829591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}