溅射Ta轻掺杂ZnO薄膜的厚度依赖结构和透明导电性能

IF 3.8 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Optical Materials Pub Date : 2025-04-11 DOI:10.1016/j.optmat.2025.117045

Trang Thuy Thi Phan , Oanh Kieu Truong Le , Y Nhu Ngoc Duong , Nhi Yen Vo Le , Trieu Quang Vo , Oanh Hoang Vo , Thuy Dieu Thi Ung , Thang Bach Phan , Vinh Cao Tran , Anh Tuan Thanh Pham

{"title":"溅射Ta轻掺杂ZnO薄膜的厚度依赖结构和透明导电性能","authors":"Trang Thuy Thi Phan , Oanh Kieu Truong Le , Y Nhu Ngoc Duong , Nhi Yen Vo Le , Trieu Quang Vo , Oanh Hoang Vo , Thuy Dieu Thi Ung , Thang Bach Phan , Vinh Cao Tran , Anh Tuan Thanh Pham","doi":"10.1016/j.optmat.2025.117045","DOIUrl":null,"url":null,"abstract":"<div><div>Doping in ZnO emerges as an effective way to improve the performance of transparent electrodes. Since the radius of Ta and Zn are very close, substituting Zn with Ta does not introduce additional stress into the crystal network. Undoped ZnO and Ta-doped ZnO (TZO) films with different thicknesses were deposited on glass substrates by using magnetron sputtering. The effects of thickness on the structural, optical, and electrical properties of the films were studied. The results showed insignificantly differences in the structural and optical properties of the TZO films at different thicknesses. However, a remarkable change was observed in the electrical properties of TZO films, which was contributed by the formation of native defects (mainly oxygen vacancies). As a result, the TZO film deposited for 15 min corresponding to 670 nm in thickness possessed the highest values of carrier concentration and mobility due to the change of point defect states, which was confirmed by photoluminescence analysis.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"164 ","pages":"Article 117045"},"PeriodicalIF":3.8000,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thickness-dependent structure and transparent conducting properties of sputtered Ta lightly-doped ZnO films\",\"authors\":\"Trang Thuy Thi Phan , Oanh Kieu Truong Le , Y Nhu Ngoc Duong , Nhi Yen Vo Le , Trieu Quang Vo , Oanh Hoang Vo , Thuy Dieu Thi Ung , Thang Bach Phan , Vinh Cao Tran , Anh Tuan Thanh Pham\",\"doi\":\"10.1016/j.optmat.2025.117045\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Doping in ZnO emerges as an effective way to improve the performance of transparent electrodes. Since the radius of Ta and Zn are very close, substituting Zn with Ta does not introduce additional stress into the crystal network. Undoped ZnO and Ta-doped ZnO (TZO) films with different thicknesses were deposited on glass substrates by using magnetron sputtering. The effects of thickness on the structural, optical, and electrical properties of the films were studied. The results showed insignificantly differences in the structural and optical properties of the TZO films at different thicknesses. However, a remarkable change was observed in the electrical properties of TZO films, which was contributed by the formation of native defects (mainly oxygen vacancies). As a result, the TZO film deposited for 15 min corresponding to 670 nm in thickness possessed the highest values of carrier concentration and mobility due to the change of point defect states, which was confirmed by photoluminescence analysis.</div></div>\",\"PeriodicalId\":19564,\"journal\":{\"name\":\"Optical Materials\",\"volume\":\"164 \",\"pages\":\"Article 117045\"},\"PeriodicalIF\":3.8000,\"publicationDate\":\"2025-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0925346725004057\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925346725004057","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

ZnO掺杂是提高透明电极性能的有效途径。由于Ta和Zn的半径非常接近，用Ta取代Zn不会在晶体网络中引入额外的应力。采用磁控溅射技术在玻璃衬底上制备了不同厚度的未掺杂ZnO和掺ta的ZnO薄膜。研究了薄膜厚度对薄膜结构、光学和电学性能的影响。结果表明，不同厚度TZO薄膜的结构和光学性能差异不显著。然而，TZO薄膜的电性能发生了显著变化，这是由于形成了天然缺陷（主要是氧空位）。结果表明，由于点缺陷态的变化，沉积15 min的厚度为670 nm的TZO薄膜具有最高的载流子浓度和迁移率，这一点通过光致发光分析得到了证实。

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Thickness-dependent structure and transparent conducting properties of sputtered Ta lightly-doped ZnO films

Doping in ZnO emerges as an effective way to improve the performance of transparent electrodes. Since the radius of Ta and Zn are very close, substituting Zn with Ta does not introduce additional stress into the crystal network. Undoped ZnO and Ta-doped ZnO (TZO) films with different thicknesses were deposited on glass substrates by using magnetron sputtering. The effects of thickness on the structural, optical, and electrical properties of the films were studied. The results showed insignificantly differences in the structural and optical properties of the TZO films at different thicknesses. However, a remarkable change was observed in the electrical properties of TZO films, which was contributed by the formation of native defects (mainly oxygen vacancies). As a result, the TZO film deposited for 15 min corresponding to 670 nm in thickness possessed the highest values of carrier concentration and mobility due to the change of point defect states, which was confirmed by photoluminescence analysis.

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来源期刊

Optical Materials 工程技术-材料科学：综合

CiteScore

6.60

自引率

12.80%

发文量

1265

审稿时长

38 days

期刊介绍： Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials. OPTICAL MATERIALS focuses on: • Optical Properties of Material Systems; • The Materials Aspects of Optical Phenomena; • The Materials Aspects of Devices and Applications. Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.