Optical Materials最新文献

{"title":"Sm2O3 modulated structural, optical, thermal and electrical properties of LiBaBO3 glasses","authors":"B. Ajay Kumar ,&nbsp;B. Sreenivas ,&nbsp;P. Indira ,&nbsp;A.K. Bhatnagar ,&nbsp;P. Hima Bindu","doi":"10.1016/j.optmat.2025.116978","DOIUrl":"10.1016/j.optmat.2025.116978","url":null,"abstract":"<div><div>Structural, optical, thermal and electrical properties of (1-x)[50B₂O₃–30Li₂O–20BaO]-xSm₂O₃ glasses [where x=0, 0.2, 0.4, 0.6, 0.8 and 1.0 mol%], synthesized by using a traditional melt-quenching technique, are reported in this paper. XRD, SEM/EDX studies on these glasses confirm the glassy structure and also their elemental composition. The densities of the samples, declined from 3.094 to 3.045 g/cm³, as the concentration of the dopant Sm₂O₃ increased, while the molar volume increased from 24.059 to 24.986 cm³/mol. FTIR, Raman spectra and UV–Vis spectra of these glasses to determine their optical characteristics. The direct and indirect band gap energies of the glass samples varied in the ranges of 3.99–3.74 eV and 3.01–2.71 eV, respectively. A decline in the Urbach energy from 0.43 to 0.32 eV is observed with increase of the dopant. The obtained results are discussed with reference to the structural changes in the glass network. The glass transition temperature increased by increasing the dopant concentration and the heating rate according to the DSC analysis of the formed glasses. The activation energy of the glass transition also increased with the dopant concentration. The variation of the DC conductivity with temperature was studied to understand electronic transport phenomena in these glasses.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116978"},"PeriodicalIF":3.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Systematic analysis of nonlinear optical properties in pristine and rare-earth-doped Zn2V2O7 for low-power optical limiting applications","authors":"Haritha J ,&nbsp;Mani Rahulan K ,&nbsp;N. Angeline Little Flower ,&nbsp;T. Sharmila ,&nbsp;Sabari Girisun T C ,&nbsp;Annie Sujatha R","doi":"10.1016/j.optmat.2025.116974","DOIUrl":"10.1016/j.optmat.2025.116974","url":null,"abstract":"<div><div>This study focuses on the optical limiting (OL) as well as, nonlinear optical (NLO), properties of pristine and rare-earth (RE) doped zinc pyrovanadate (Zn₂V₂O₇), were systematically investigated through the Z-scan method operated at 532 nm wavelength within the nanosecond domain. RE-doped Zn₂V₂O₇ nanoparticles, where RE = Nd, Er, and Eu, are prepared through the hydrothermal method, and their structural, morphological, and optical properties are studied in detail. The X-ray diffraction studies describe the structure information and surface morphology it exhibits as revealed by scanning electron microscopy. The molecular structures and chemical bonding have been confirmed using Raman spectroscopy and Fourier-transform infrared spectroscopy. The linear absorption studies revealed decreased band gap energy upon doping with RE elements. Nonlinear optical studies conducted using the open-aperture (OA) Z-scan method showed that all the samples exhibited reverse saturable absorption (RSA) behavior through a mechanism involving the simultaneous absorption of two photons. Contrary to the pristine Zn₂V₂O₇, the OL and NLO behavior of the RE-doped samples are strongly enhanced. Among the materials under study, Eu-doped Zn₂V₂O₇ revealed the highest nonlinear optical absorption with better optical limiting performance compared to Nd and Er doping. These findings indicate that Eu-doped Zn₂V₂O₇ can be considered as a material with potential applications in low-power optical limiting devices due to its enhanced optical limiting characteristics and effective nonlinear absorption.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116974"},"PeriodicalIF":3.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143739008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polydopamine modified Nd-doped TiO2 films for improved electrochromism and energy storage","authors":"Bo Zhang ,&nbsp;Xiaoxing Yan ,&nbsp;Shengli Liu ,&nbsp;Enze Wu ,&nbsp;Yuanyuan Tian","doi":"10.1016/j.optmat.2025.116969","DOIUrl":"10.1016/j.optmat.2025.116969","url":null,"abstract":"<div><div>Electrochromic materials can show reversible optical changes under the small applied voltages, which have the great application prospects in smart window, energy storage, thermal control fields. In the practical application of electrochromic materials, fast responsiveness and stable periodicity are urgently needed. In this study, the nanoporous Nd-doped TiO₂ (TNO) films are synthesized by the hydrothermal method, and then polydopamine (PDA) is coated on the surfaces of TNO films to prepare TNO-P_t films (t = 15, 30, 60 and 120). TNO-P_t films have the wider transmittance modulations and larger surface capacitances than that of TNO film. Moreover, TNO-P_t films have shorter response times and higher cycle stability due to PDA films enhance the interface ion transfer properties and electrochemical stability of nanoporous TNO films. In particular, the coloring and bleaching times of the TNO-P₆₀ film is 12.4 and 18.3 s, and retained 91.7 % of the initial transmittance modulation (70.3 %) after 2000 cycles. In addition, the surface capacitance of TNO film modified by PDA can be risen to 238 %. Therefore, TNO-P_t films can be used as one candidate material for electrochromic energy saving and storage window.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116969"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143680677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced luminous exitance and saturation threshold of Y3Al5O12:Ce phosphor-in-glass films via incorporation of highly thermally conductive boron nitride particles","authors":"Bingguo Liu ,&nbsp;Yanghan Guo ,&nbsp;Yangzi Li ,&nbsp;Shiqing Pang ,&nbsp;Shunzi Li ,&nbsp;Peng Xu ,&nbsp;Dan Zhao ,&nbsp;Carsten Dam-Hansen ,&nbsp;Jian Xu ,&nbsp;Baoli Du ,&nbsp;Ole Bjarlin Jensen","doi":"10.1016/j.optmat.2025.116973","DOIUrl":"10.1016/j.optmat.2025.116973","url":null,"abstract":"<div><div>Phosphor-in-glass film (PiG-film) displays great potential for high performance laser-driven white lighting, benefiting from its facile fabrication and high efficiency. However, the low thermal conductivity of the glass matrix may lead to thermal quenching of phosphors and limit the maximum luminous flux of the light source. Here, boron nitride (BN) with high thermal conductivity and low absorption coefficient was embedded into Y₃Al₅O₁₂:Ce PiG-film to facilitate the heat-transfer process, and to regulate the propagation of both laser and fluorescence. The influences of BN particle size and doping concentration on surface morphology (pore formation), luminescence saturation threshold (LST), luminous flux, and the spatial distribution of correlated color temperature (CCT) were investigated and correlated. Moreover, the luminescence spot confinement was analyzed and luminous exitance was obtained. Benefiting from the formation of effective BN heat-transfer network, the luminous efficacy of both YAG-45-2 % and YAG-45-1 % films surpass the non-doped one as laser power density &gt;19.00 W/mm². A LST higher than 27.04 W/mm² was observed in YAG-45-2 % film, more than 42 % higher than the non-doped one. Though the extra reflection of blue laser by BN particles downgrades the CCT spatial distribution uniformity, the particles strongly scatter the fluorescence and restrict the fluorescence-emitting spot (diameter) expansion from 307 to 174 μm, and a high luminous exitance of 1614 lm/mm² was achieved in YAG-45-2 % film. These results firmly demonstrate that incorporation of particles with high thermal conductivity and low absorption coefficient in PiG-film is a feasible strategy for achieving high-brightness laser lighting.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116973"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Metallic transition metal dichalcogenide-based single-frequency fiber lasers with sub-kHz linewidths","authors":"Yiyu Gan,&nbsp;Wenyao Zhang,&nbsp;Qiao Wen","doi":"10.1016/j.optmat.2025.116941","DOIUrl":"10.1016/j.optmat.2025.116941","url":null,"abstract":"<div><div>MTe₂ (M = V, Nb), with remarkable physical features, is a typical layered metallic transition metal dichalcogenide that has garnered a lot of interest. It has established a wide range of applications in the disciplines of advanced electronic devices, magnetics, and electrochemistry. Nevertheless, its utilization in single frequency fiber lasers has been rather restricted. MTe₂ (M = V, Nb) samples were exfoliated into a few layers by using liquid phase exfoliation. Next, by carefully depositing MTe2 (M = V, Nb) nanosheets onto the surface of D-shaped fibers, we investigated the potential applications of MTe₂ (M = V, Nb)-based transient bragg grating. This resulted in the successful development of two stable single-frequency fiber lasers based on VTe₂ and NbTe₂, respectively. The center wavelengths of these SFFLs are approximately 1550 nm. The linewidth of NbTe₂, which is the narrowest ever reported for an SFFL based on low-dimensional materials, was measured to be approximately 354.5 Hz, with a signal-to-noise ratio of 72.672 dB. The signal-to-noise ratio of VTe₂ is about 75.22 dB, the highest observed among lasers based on low-dimensional materials.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116941"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143714510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal noise reduction in ion-beam sputtered HfO2:Ta2O5 thin films via high-temperature treatment","authors":"Valeria Milotti ,&nbsp;Giulio Favaro ,&nbsp;Massimo Granata ,&nbsp;Danièle Forest ,&nbsp;Christophe Michel ,&nbsp;Julien Teillon ,&nbsp;Nicole Busdon ,&nbsp;Marco Bazzan ,&nbsp;Hanna Skliarova ,&nbsp;Giacomo Ciani ,&nbsp;Carlo Scian ,&nbsp;Livia Conti ,&nbsp;Shima Samandari ,&nbsp;Valentina Venturino ,&nbsp;Michele Magnozzi ,&nbsp;Maurizio Canepa ,&nbsp;Nicholas Demos ,&nbsp;Slawomir Gras ,&nbsp;Matthew Evans ,&nbsp;Valérie Martinez ,&nbsp;Anaël Lemaître","doi":"10.1016/j.optmat.2025.116901","DOIUrl":"10.1016/j.optmat.2025.116901","url":null,"abstract":"<div><div>Reducing coating thermal noise (CTN) in mirrors for gravitational wave (GW) interferometers is pivotal to improving sensitivity in the mid-frequency range. Current mirror coatings are heat-treated (annealed) after deposition in order to partially relax their microstructure and to improve their optical and mechanical properties. The maximum annealing temperature is an important parameter in this respect as a higher thermal energy allows the system to relax to more stable configurations, which is often beneficial for the thermal noise performances of the coatings. However, the useful temperature range is limited by the stability of the amorphous microstructure, since excessive heating eventually leads to the formation of crystalline grains which are detrimental from both the mechanical and optical viewpoints. In this work, inspired by the possibility to improve glass stability in alloys by a careful choice of mixing ratios, we studied ion-beam co-sputtered amorphous HfO₂:Ta₂O₅ thin films with different HfO₂ concentrations, so as to identify conditions that would lead to a higher glass stability in order to explore the effects of a thermal annealing over an extended temperature range. We then deposited a multilayer mirror, alternating layers of HfO₂:Ta₂O₅ with composition providing the highest crystallization temperature and SiO₂ layers. The thermal Brownian noise of the mirror coating was found to decrease with increasing heat-treatment temperatures, reaching losses comparable to the Ti-doped Ta₂O₅ coatings of Advanced LIGO when heated at the highest possible temperature. Our results demonstrate the critical importance of optimizing the film composition and annealing procedure in order to improve the coating performances and the sensitivity for the next generation of GW detectors.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116901"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143726293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"WO3 nanoparticles-embedded porous silicon: Dual-function materials synthesized via laser ablation and electrochemical etching for advanced photodetection and gas sensing applications","authors":"Allaa A. Jabbar,&nbsp;Raid A. Ismail,&nbsp;Alwan M. Alwan","doi":"10.1016/j.optmat.2025.116971","DOIUrl":"10.1016/j.optmat.2025.116971","url":null,"abstract":"<div><div>In light of their outstanding physical and chemical traits, nanostructured devices have attracted significant attention. In light of their outstanding physical and chemical traits, nanostructured devices have attracted significant attention. The manipulation of the dimensions and morphology of nanostructured surfaces could precisely adjust these characteristics. In this work, porous silicon (PSi) was synthesized through a laser-assisted electrochemical etching method. The porous silicon was embedded with tungsten trioxide WO₃ nanoparticles (NPs), which were synthesized using liquid phase laser ablation at different laser fluences. X-ray diffraction (XRD) analysis verified the synthesis of tungsten oxide nanoparticles in a crystalline form featuring a monoclinic structure, which was integrated into the porous silicon matrix. Investigations utilizing scanning electron microscopy (SEM) and transmission electron microscopy (TEM) exhibited the development of spherical tungsten oxide nanoparticles, featuring diameters ranging from 110 to 153 nm, upon the laser fluence employed. SEM analysis further showed that the average pore diameter of the porous silicon was 1.6 μm, with the tungsten oxide nanoparticles embedded inside the pores. Optical measurements indicated that the tungsten oxide energy gap was 3.2 eV at a laser fluence of 51 J/cm² and rose to 3.55 eV as the laser fluence increased to 71 J/cm². Zeta potential studies indicated that the nanoparticles formed at 61 J/cm² were stable. The optoelectronic properties of WO₃ nanoparticle-embedded PSi/c-Si heterojunction photodetectors fabricated at different laser fluences were also investigated. A responsivity of 1.35 A/W was attained at a wavelength of 450 nm when the device was fabricated using 61 J/cm² laser fluence. The WO₃-embedded PSi gas sensor synthesized at a 61 J/cm² energy fluence exhibited the highest CO gas sensitivity, with a 63 % response at 20.2 ppm.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116971"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Insights into optical and photoelectrical properties of copper biphthalocyanine for efficient optoelectronic applications","authors":"Ahmed R. Wassel ,&nbsp;M.A.Abd El-Ghaffar ,&nbsp;Ahmed M. El-Mahalawy","doi":"10.1016/j.optmat.2025.116966","DOIUrl":"10.1016/j.optmat.2025.116966","url":null,"abstract":"<div><div>A novel copper biphthalocyanine (CuPc₂) compound was synthesized using a facile straightforward approach. Thermally deposited CuPc₂ thin films are prepared under vacuum at room temperature. The crystal and molecular structures of the deposited films relative to powder have been investigated using XRD and FTIR spectroscopy, respectively. The nanostructured CuPc₂ films, as visualized microscopically via FE-SEM, possess uniform surface morphology and low roughness. The optical properties of the deposited films are evaluated spectrophotometrically in the UV–vis–NIR region. The conventional Q and B-bands were identified with onset and fundamental energy gap of about 1.61, and 2.85 eV, respectively, and confirmed the α-molecular phase with small Urbach energy ∼43.5 meV. The dispersion characteristics were analyzed using the single oscillator and Sellmeier models. The optical dielectric, energy loss, and optical conductivity are deducted and interpreted. The nonlinear optical susceptibility, refractive index, and absorption coefficient were extracted and compared to many other metallophthalocyanines films. The present films exhibit exhibits abnormal PL emission spectrum along the visible region with white point CIE coordinates. Furthermore, the measured current-voltage relation of the designed Au/CuPc₂/p-Si/Al heterojunction is analyzed in detail. The ideality factor, reverse current, barrier height, series resistance shunt resistance, and interface state density are deduced. The photodetection features of the designed heterojunction are evaluated under different intensities (20–100) mW/cm². Fast and efficient responsive performance with high linearity is achieved by the present heterojunction; besides it offers the validity of usage under very low power consumptions (−0.05 V).</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116966"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Probing the peculiar emission behaviors of c-Sapphire wafer and β-Ga2O3/c-Sapphire via hard X-ray nanoprobe","authors":"Sunny Saurabh ,&nbsp;Umeshwar Reddy Nallasani ,&nbsp;Tzu-Chi Huang ,&nbsp;Chun-Yen Lin ,&nbsp;Yi-Chen Li ,&nbsp;Yu-Hao Wu ,&nbsp;Chien-Yu Lee ,&nbsp;Bo-Yi Chen ,&nbsp;Gung-Chian Yin ,&nbsp;Mau-Tsu Tang ,&nbsp;Wu-Ching Chou ,&nbsp;Bi-Hsuan Lin","doi":"10.1016/j.optmat.2025.116975","DOIUrl":"10.1016/j.optmat.2025.116975","url":null,"abstract":"<div><div>We report the intriguing phenomena of evolution of color centers (F and F⁺) using time-dependent X-ray excited optical luminescence (XEOL) in c-plane Sapphire wafer, β-Ga₂O₃/c-Sapphire and GaSe/β-Ga₂O₃/c-Sapphire. The increasing emission intensity of F⁺ and F-color centers over time indicates the formation of new color centers by continuous exposure to X-ray irradiation. These oxygen vacancy defect states remained even after having layer of epitaxial thin film of β-Ga₂O₃, and subsequent GaSe of sub μm thickness on top due to high penetration depth of X-ray. Interestingly, defect states of β-Ga₂O₃ decrease with time suggesting passivation of defect states induced by long term exposure to X-ray radiation. Also, we demonstrated the effect of long term X-ray irradiation using XEOL map, revealing spatial variation in defect state emission intensities. Time-resolved XEOL was used to measure dynamics of luminescence decay of F⁺ color center and defect state emission of Ga₂O₃.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116975"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143726291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A comparative study of sol-gel and electrodeposition methods used in the synthesis of Cu2FeSnS4 thin films","authors":"S. Drissi ,&nbsp;A. El Kissani ,&nbsp;A. Abali ,&nbsp;D. Elhaj ,&nbsp;S. Elmassi ,&nbsp;H. Badr ,&nbsp;H. Dahabi ,&nbsp;M. Tair ,&nbsp;L. Nkhaili ,&nbsp;K. El Assali ,&nbsp;A. Outzourhit","doi":"10.1016/j.optmat.2025.116972","DOIUrl":"10.1016/j.optmat.2025.116972","url":null,"abstract":"<div><div>This research aims to develop copper iron tin sulfide using two distinct chemical methods, sol-gel and electrodeposition. A comparative analysis is performed to evaluate and contrast the results obtained from each method. The X-ray Diffraction results indicate that all films exhibit a preferential orientation along the (112) plane, approving the presence of the tetragonal stannite phase with space group I-42m for both fabrication techniques. Raman Spectroscopy confirms the phase identified by X-ray Diffraction. Scanning Electron Microscopy showed a uniformed and dense surface. Energy Dispersive Spectroscopy confirmed the presence of all elements present in the structure. The optical analysis for both fabrication methods confirms that the thin films exhibit absorption coefficients greater than 10⁴ cm⁻¹ and band gap energies of 1.43 eV and 1.5 eV for the electrodeposition and sol-gel techniques respectively, which are indicative of good light absorption characteristics. Hall Effect measurements revealed a p-type conductivity in CFTS thin films prepared by the sol-gel method, with a carrier concentration of 3.85 10¹⁶, an electrical mobility of 1.42 10⁻² cm²/V.s, and a sheet resistivity of 3.31 Ω cm. The simulation of the efficiency of solar cells based on CFTS absorbers prepared by both methods was performed using the SCAPS-1D simulator, and theoretical J-V characteristics were generated. Overall, this research establishes the effectiveness of this thin films as viable absorbers in solar cells.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116972"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143680678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}