发布求助
文献互助 智能选刊 最新文献

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006最新文献

筛选
英文 中文
High performance NPN BJTs in standard CMOS process for GSM transceiver and DVB-H tuner 用于GSM收发器和DVB-H调谐器的标准CMOS工艺的高性能NPN bjt
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI: 10.1109/RFIC.2006.1651191
Jedon D. Kim, Hansu Oh, Chulho Chung, Joo-Hyun Jjeong, Hyunwoo Lee, S. Hwang, In-Chul Hwang, Young-jin Kim, K. Hong, E. Jung, K. Suh
{"title":"High performance NPN BJTs in standard CMOS process for GSM transceiver and DVB-H tuner","authors":"Jedon D. Kim, Hansu Oh, Chulho Chung, Joo-Hyun Jjeong, Hyunwoo Lee, S. Hwang, In-Chul Hwang, Young-jin Kim, K. Hong, E. Jung, K. Suh","doi":"10.1109/RFIC.2006.1651191","DOIUrl":"https://doi.org/10.1109/RFIC.2006.1651191","url":null,"abstract":"We report a high performance NPN bipolar junction transistor (BJT) processed in standard CMOS process that is applied to realize the direct conversion GSM receiver and DVB-H tuner. Through the variation of the base doping profile, performance of the NPN BJT has been tailored to meet the requirements of the RF circuits. Careful optimization is performed using both simulation and experiment. Optimized NPN BJT has maximum current gain of ~44, collector-emitter breakdown voltage of ~7V, collector-base breakdown voltage of ~20V, early voltage of ~25V, cutoff frequency of ~8.0GHz, and maximum oscillation frequency of ~11.6GHz. Low frequency noise characteristics of the NPN BJTs are investigated and the best structure for low noise level is identified. The corner frequency of the 1/f noise is ~2kHz at a collector current of ~1.7mA, which is ~4 orders lower than that of NMOS. As the flicker noise level is much lower than the CMOS, NPN BJT is used to realize the zero intermediate frequency (ZIF) direct conversion receiver (DCR) for GSM transceiver and DVB-H tuner. The resulting GSM receiver chain has a gain of over 50dB and noise figure of 2.5-3.0dB. For DVB-H tuner operating in the range of 470-850MHz, NF of 4.5dB and IIP3 of -5dBm are achieved at a gain of 64dB","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130057117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 40-Gb/s, digitally programmable peaking limiting amplifier with 20-dB differential gain in 90-nm CMOS 一个40 gb /s，数字可编程峰值限制放大器与20 db差分增益在90纳米CMOS
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI: 10.1109/RFIC.2006.1651163
J. Weiss, M. Schmatz, H. Jaeckel
{"title":"A 40-Gb/s, digitally programmable peaking limiting amplifier with 20-dB differential gain in 90-nm CMOS","authors":"J. Weiss, M. Schmatz, H. Jaeckel","doi":"10.1109/RFIC.2006.1651163","DOIUrl":"https://doi.org/10.1109/RFIC.2006.1651163","url":null,"abstract":"A 40-Gb/s differential CMOS limiting amplifier in standard 90-nm technology is presented. The circuit dissipates as little as 80 mW from a 1 V power supply and has a differential gain of 20 dB. It can drive data at 40 Gb/s into multiple sampling circuits with a total input capacitance as high as 300 fF. The amplifier features a digitally programmable load resistor for the differential stages to control gain-peaking intensity. This can be used to cancel process variations or for active channel-compensation schemes. The output common mode voltage and circuit bias are controlled by a replica stage. The circuit occupies 0.033 mm2 of silicon real estate","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133369450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Frequency characterization of a 2.4 GHz CMOS LNA by thermal measurements 2.4 GHz CMOS LNA的热测量频率表征
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI: 10.1109/RFIC.2006.1651204
D. Mateo, J. Altet, E. Aldrete-Vidrio, J.L. Gonzalez
{"title":"Frequency characterization of a 2.4 GHz CMOS LNA by thermal measurements","authors":"D. Mateo, J. Altet, E. Aldrete-Vidrio, J.L. Gonzalez","doi":"10.1109/RFIC.2006.1651204","DOIUrl":"https://doi.org/10.1109/RFIC.2006.1651204","url":null,"abstract":"This paper presents a technique to obtain electrical characteristics of analog and RF circuits, based on measuring temperature at the silicon surface close to the circuit under test. Experimental results validate the feasibility of the technique. Simulated results show how this technique can be used to measure the bandwidth and central frequency of a 2.4 GHz low noise amplifier (LNA) designed in a 0.35 microns standard CMOS technology","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132699930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Ultra-low power RFIC design using moderately inverted MOSFETs: an analytical/experimental study 使用适度倒置mosfet的超低功耗RFIC设计:分析/实验研究
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI: 10.1109/RFIC.2006.1651193
A. Shameli, P. Heydari
{"title":"Ultra-low power RFIC design using moderately inverted MOSFETs: an analytical/experimental study","authors":"A. Shameli, P. Heydari","doi":"10.1109/RFIC.2006.1651193","DOIUrl":"https://doi.org/10.1109/RFIC.2006.1651193","url":null,"abstract":"This paper studies the use of moderately inverted MOS transistors in ultra-low power (ULP) RFIC design. We introduce a new figure of merit for a MOS transistor, i.e., the gmfT-to-current ratio, (gmfT/ID) which accounts for both the unity-gain frequency and current consumption during the optimization process of the transistor's performance. Using this figure of merit while taking into account the velocity saturation of short-channel MOS devices, it is shown both experimentally and analytically that the gmfT/ID reaches its maximum value in moderate inversion region. Moreover, we analytically investigate the noise behavior of the MOS transistor during the transition from weak inversion to strong inversion region. The measurement results have been obtained for an NMOS transistor fabricated in Jazz Semiconductor's CMOS process","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131882719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 52
A fully-integrated 900-MHz CMOS power amplifier for mobile RFID reader applications 一个完全集成的900 mhz CMOS功率放大器，用于移动RFID阅读器应用
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI: 10.1109/RFIC.2006.1651174
Jeonghu Han, Younsuk Kim, Changkun Park, Dongho Lee, Songcheol Hong
{"title":"A fully-integrated 900-MHz CMOS power amplifier for mobile RFID reader applications","authors":"Jeonghu Han, Younsuk Kim, Changkun Park, Dongho Lee, Songcheol Hong","doi":"10.1109/RFIC.2006.1651174","DOIUrl":"https://doi.org/10.1109/RFIC.2006.1651174","url":null,"abstract":"A 900-MHz linear power amplifier has been fabricated for ultra-high-frequency (UHF) radio frequency identification (RFID) reader applications using a 0.25-mum CMOS technology. An on-chip transmission-line transformer is used for output matching network. Input and inter-stage matching components, and RF chokes are fully integrated in the designed amplifier so that no external components are required. The power amplifier provides linear output power of 27 dBm at 920 MHz with a 2.5-V supply. Power-added-efficiency (PAE) at 1-dB-gain-compression point (P1dB) is 28 %. Gain flatness over the full UHF RFID band, which covers from 860 MHz to 960 MHz, is 1 dB","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127392612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Integrated transformer baluns for RF low noise and power amplifiers 集成变压器平衡射频低噪声和功率放大器
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI: 10.1109/RFIC.2006.1651093
Haitao Gan, S. Wong
{"title":"Integrated transformer baluns for RF low noise and power amplifiers","authors":"Haitao Gan, S. Wong","doi":"10.1109/RFIC.2006.1651093","DOIUrl":"https://doi.org/10.1109/RFIC.2006.1651093","url":null,"abstract":"On-chip transformer baluns integrated with an RF front-end architecture for medium power WLAN is presented. Method of measuring and characterizing a 3-port balun with a 2-port network analyzer is discussed. Implemented in 0.18mum CMOS, the receive path including a switch, an input transformer and a differential LNA, achieves S21 of 17dB, NF of 4.1dB, and IIP3 of 0dBm at 2.45GHz; the transmit path of a differential PA with an output transformer, achieves Psat of 21dBm, P1dB of 17dBm, and max PAE of 21%","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115193884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
AM-FM conversion by the active devices in MOS LC-VCOs and its effect on the optimal amplitude MOS lc - vco中有源器件的AM-FM转换及其对最优振幅的影响
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI: 10.1109/RFIC.2006.1651102
B. Soltanian, P. Kinget
{"title":"AM-FM conversion by the active devices in MOS LC-VCOs and its effect on the optimal amplitude","authors":"B. Soltanian, P. Kinget","doi":"10.1109/RFIC.2006.1651102","DOIUrl":"https://doi.org/10.1109/RFIC.2006.1651102","url":null,"abstract":"Large oscillation amplitudes in differential MOS LC-VCOs change the operation region of the MOS negative-resistance devices and thus modulate their parasitic capacitances. As a result, the effective tank capacitance and the oscillation frequency change with respect to the oscillation amplitude for a fixed tuning voltage. The resulting frequency-versus-amplitude curve has a maximum for differential amplitude approximately equal to the threshold voltage of the MOS devices which corresponds to the optimum amplitude that minimizes AM-to-FM conversion. The presented analysis is confirmed with simulation and measurement results for a 2 GHz differential NMOS VCO fabricated in a 0.25 mum BiCMOS process. The optimum amplitude for lowest AM-to-FM conversion also yields the lowest phase noise for this oscillator","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114465310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
Characterization of Si-based monolithic transformers with patterned ground shield 带图案接地屏蔽的硅基单片变压器的特性研究
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI: 10.1109/RFIC.2006.1651133
O. El-Gharniti, E. Kerhervé, J. Bégueret
{"title":"Characterization of Si-based monolithic transformers with patterned ground shield","authors":"O. El-Gharniti, E. Kerhervé, J. Bégueret","doi":"10.1109/RFIC.2006.1651133","DOIUrl":"https://doi.org/10.1109/RFIC.2006.1651133","url":null,"abstract":"This paper investigates the impact of patterned ground shield on monolithic integrated transformers. The minimum insertion loss is shown to be a useful figure of merit. It is used to evaluate transformer performances. We demonstrate that the use of a patterned ground shield increases the quality factor of both primary and secondary coils. It increases also the mutual coupling coefficient and thus reduces the minimum insertion loss at high frequency, while at low frequency it has no effect. Measured insertion loss as low as 1.27dB at 5GHz, has been observed. The impact of patterned ground shield is shown to be more significant in the case of transformer with important transformation ratio","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123537995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
RF components with high reliability and low loss by partial trench isolation of SOI-CMOS technology 采用SOI-CMOS部分沟槽隔离技术实现高可靠性、低损耗的射频元件
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI: 10.1109/RFIC.2006.1651094
A. Furukawa, Y. Hirano, T. Ohnakado, T. Ikeda, Y. Kagawa, K. Shintani, K. Nishikawa, S. Yamakawa, T. Ipposhi, S. Maegawa, M. Takeda, H. Arima
{"title":"RF components with high reliability and low loss by partial trench isolation of SOI-CMOS technology","authors":"A. Furukawa, Y. Hirano, T. Ohnakado, T. Ikeda, Y. Kagawa, K. Shintani, K. Nishikawa, S. Yamakawa, T. Ipposhi, S. Maegawa, M. Takeda, H. Arima","doi":"10.1109/RFIC.2006.1651094","DOIUrl":"https://doi.org/10.1109/RFIC.2006.1651094","url":null,"abstract":"This paper describes the experimental characteristics of RF components with layout and structural optimization, fabricated in 0.10-mum 1.2-V SOI-CMOS technology with partial trench isolation (PTI). ESD protection-grounded gate SOI-NMOSFETs achieve high reliability due to body-tied structure with PTI, and newly proposed ESD diodes also derive superior performance. Moreover, this technology offers a low loss RF switch and a broadband amplifier with low power consumption. These results are very promising for the fabrication of broadband RF integrated circuits","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"409 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122114455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evolution of a Software-Defined Radio Receiver's RF Front-End 软件定义无线电接收机射频前端的发展
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI: 10.1109/RFIC.2006.1651080
A. Abidi
{"title":"Evolution of a Software-Defined Radio Receiver's RF Front-End","authors":"A. Abidi","doi":"10.1109/RFIC.2006.1651080","DOIUrl":"https://doi.org/10.1109/RFIC.2006.1651080","url":null,"abstract":"The subject of this paper is how to construct this flexible receiver. We survey the steps that have been taken over the years in this direction - some very tenuously - leading up to a recent realization of a software-defined RF front-end. We do not cover the work that has gone into the digital front-end which follows the ADC (Hentschel and Fettweis, 2002), nor on the software-defined baseband - both are essential for a full radio. Furthermore, an efficient software-defined transmitter without which the software-defined radio project is incomplete is still in the research phase","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124462342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 45
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信