A. Furukawa, Y. Hirano, T. Ohnakado, T. Ikeda, Y. Kagawa, K. Shintani, K. Nishikawa, S. Yamakawa, T. Ipposhi, S. Maegawa, M. Takeda, H. Arima
{"title":"采用SOI-CMOS部分沟槽隔离技术实现高可靠性、低损耗的射频元件","authors":"A. Furukawa, Y. Hirano, T. Ohnakado, T. Ikeda, Y. Kagawa, K. Shintani, K. Nishikawa, S. Yamakawa, T. Ipposhi, S. Maegawa, M. Takeda, H. Arima","doi":"10.1109/RFIC.2006.1651094","DOIUrl":null,"url":null,"abstract":"This paper describes the experimental characteristics of RF components with layout and structural optimization, fabricated in 0.10-mum 1.2-V SOI-CMOS technology with partial trench isolation (PTI). ESD protection-grounded gate SOI-NMOSFETs achieve high reliability due to body-tied structure with PTI, and newly proposed ESD diodes also derive superior performance. Moreover, this technology offers a low loss RF switch and a broadband amplifier with low power consumption. These results are very promising for the fabrication of broadband RF integrated circuits","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"409 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"RF components with high reliability and low loss by partial trench isolation of SOI-CMOS technology\",\"authors\":\"A. Furukawa, Y. Hirano, T. Ohnakado, T. Ikeda, Y. Kagawa, K. Shintani, K. Nishikawa, S. Yamakawa, T. Ipposhi, S. Maegawa, M. Takeda, H. Arima\",\"doi\":\"10.1109/RFIC.2006.1651094\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the experimental characteristics of RF components with layout and structural optimization, fabricated in 0.10-mum 1.2-V SOI-CMOS technology with partial trench isolation (PTI). ESD protection-grounded gate SOI-NMOSFETs achieve high reliability due to body-tied structure with PTI, and newly proposed ESD diodes also derive superior performance. Moreover, this technology offers a low loss RF switch and a broadband amplifier with low power consumption. These results are very promising for the fabrication of broadband RF integrated circuits\",\"PeriodicalId\":194071,\"journal\":{\"name\":\"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006\",\"volume\":\"409 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2006.1651094\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2006.1651094","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
本文介绍了采用0.1 μ m 1.2 v部分沟槽隔离(PTI) SOI-CMOS技术制备的射频元件经过布局和结构优化后的实验特性。ESD保护接地栅极soi - nmosfet由于具有PTI的体系结构而具有高可靠性，并且新提出的ESD二极管也具有优越的性能。此外，该技术还提供了低损耗射频开关和低功耗宽带放大器。这些结果对宽带射频集成电路的制造具有重要的指导意义
RF components with high reliability and low loss by partial trench isolation of SOI-CMOS technology
This paper describes the experimental characteristics of RF components with layout and structural optimization, fabricated in 0.10-mum 1.2-V SOI-CMOS technology with partial trench isolation (PTI). ESD protection-grounded gate SOI-NMOSFETs achieve high reliability due to body-tied structure with PTI, and newly proposed ESD diodes also derive superior performance. Moreover, this technology offers a low loss RF switch and a broadband amplifier with low power consumption. These results are very promising for the fabrication of broadband RF integrated circuits
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
