2.4 GHz CMOS LNA的热测量频率表征

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI:10.1109/RFIC.2006.1651204

D. Mateo, J. Altet, E. Aldrete-Vidrio, J.L. Gonzalez

{"title":"2.4 GHz CMOS LNA的热测量频率表征","authors":"D. Mateo, J. Altet, E. Aldrete-Vidrio, J.L. Gonzalez","doi":"10.1109/RFIC.2006.1651204","DOIUrl":null,"url":null,"abstract":"This paper presents a technique to obtain electrical characteristics of analog and RF circuits, based on measuring temperature at the silicon surface close to the circuit under test. Experimental results validate the feasibility of the technique. Simulated results show how this technique can be used to measure the bandwidth and central frequency of a 2.4 GHz low noise amplifier (LNA) designed in a 0.35 microns standard CMOS technology","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Frequency characterization of a 2.4 GHz CMOS LNA by thermal measurements\",\"authors\":\"D. Mateo, J. Altet, E. Aldrete-Vidrio, J.L. Gonzalez\",\"doi\":\"10.1109/RFIC.2006.1651204\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a technique to obtain electrical characteristics of analog and RF circuits, based on measuring temperature at the silicon surface close to the circuit under test. Experimental results validate the feasibility of the technique. Simulated results show how this technique can be used to measure the bandwidth and central frequency of a 2.4 GHz low noise amplifier (LNA) designed in a 0.35 microns standard CMOS technology\",\"PeriodicalId\":194071,\"journal\":{\"name\":\"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2006.1651204\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2006.1651204","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文提出了一种基于测量被测电路附近硅表面温度来获取模拟电路和射频电路电特性的技术。实验结果验证了该技术的可行性。仿真结果表明，该方法可用于测量采用0.35微米标准CMOS技术设计的2.4 GHz低噪声放大器(LNA)的带宽和中心频率

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Frequency characterization of a 2.4 GHz CMOS LNA by thermal measurements

This paper presents a technique to obtain electrical characteristics of analog and RF circuits, based on measuring temperature at the silicon surface close to the circuit under test. Experimental results validate the feasibility of the technique. Simulated results show how this technique can be used to measure the bandwidth and central frequency of a 2.4 GHz low noise amplifier (LNA) designed in a 0.35 microns standard CMOS technology

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IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006

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