A 40-Gb/s, digitally programmable peaking limiting amplifier with 20-dB differential gain in 90-nm CMOS

J. Weiss, M. Schmatz, H. Jaeckel
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引用次数: 5

Abstract

A 40-Gb/s differential CMOS limiting amplifier in standard 90-nm technology is presented. The circuit dissipates as little as 80 mW from a 1 V power supply and has a differential gain of 20 dB. It can drive data at 40 Gb/s into multiple sampling circuits with a total input capacitance as high as 300 fF. The amplifier features a digitally programmable load resistor for the differential stages to control gain-peaking intensity. This can be used to cancel process variations or for active channel-compensation schemes. The output common mode voltage and circuit bias are controlled by a replica stage. The circuit occupies 0.033 mm2 of silicon real estate
一个40 gb /s,数字可编程峰值限制放大器与20 db差分增益在90纳米CMOS
提出了一种标准90纳米工艺的40gb /s差分CMOS限幅放大器。该电路从1 V电源耗散小至80 mW,差分增益为20 dB。它可以以40gb /s的速度将数据驱动到多个采样电路中,总输入电容高达300ff。放大器的特点是一个数字可编程负载电阻的差分级,以控制增益峰值强度。这可以用于取消过程变化或用于主动通道补偿方案。输出共模电压和电路偏置由复制级控制。该电路占用0.033平方毫米的硅空间
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