{"title":"A 40-Gb/s, digitally programmable peaking limiting amplifier with 20-dB differential gain in 90-nm CMOS","authors":"J. Weiss, M. Schmatz, H. Jaeckel","doi":"10.1109/RFIC.2006.1651163","DOIUrl":null,"url":null,"abstract":"A 40-Gb/s differential CMOS limiting amplifier in standard 90-nm technology is presented. The circuit dissipates as little as 80 mW from a 1 V power supply and has a differential gain of 20 dB. It can drive data at 40 Gb/s into multiple sampling circuits with a total input capacitance as high as 300 fF. The amplifier features a digitally programmable load resistor for the differential stages to control gain-peaking intensity. This can be used to cancel process variations or for active channel-compensation schemes. The output common mode voltage and circuit bias are controlled by a replica stage. The circuit occupies 0.033 mm2 of silicon real estate","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2006.1651163","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A 40-Gb/s differential CMOS limiting amplifier in standard 90-nm technology is presented. The circuit dissipates as little as 80 mW from a 1 V power supply and has a differential gain of 20 dB. It can drive data at 40 Gb/s into multiple sampling circuits with a total input capacitance as high as 300 fF. The amplifier features a digitally programmable load resistor for the differential stages to control gain-peaking intensity. This can be used to cancel process variations or for active channel-compensation schemes. The output common mode voltage and circuit bias are controlled by a replica stage. The circuit occupies 0.033 mm2 of silicon real estate