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1993 (5th) International Conference on Indium Phosphide and Related Materials最新文献

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Strain relaxation of Ga/sub 0.2/In/sub 0.8/As and InAs/sub 0.5/P/sub 0.5/ layers grown on InP substrate for 1.6 to 2.4 /spl mu/m spectral range Ga/sub x/In/sub 1-x/As/InAs/sub y/P/sub 1-y//InP photodiodes application 在InP衬底上生长的Ga/sub 0.2/In/sub 0.8/As和InAs/sub 0.5/P/sub 0.5/层在1.6 ~ 2.4 /spl mu/m光谱范围Ga/sub x/In/sub 1-x/As/InAs/sub y/P/sub 1-y//InP光电二极管的应变松弛
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380691
P. Kae-Nune, M. di Forte-Poisson, C. Brylinski, J. di Persio
{"title":"Strain relaxation of Ga/sub 0.2/In/sub 0.8/As and InAs/sub 0.5/P/sub 0.5/ layers grown on InP substrate for 1.6 to 2.4 /spl mu/m spectral range Ga/sub x/In/sub 1-x/As/InAs/sub y/P/sub 1-y//InP photodiodes application","authors":"P. Kae-Nune, M. di Forte-Poisson, C. Brylinski, J. di Persio","doi":"10.1109/ICIPRM.1993.380691","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380691","url":null,"abstract":"Mismatched Ga/sub 1-x/As/InAs/sub y/P/sub 1-y//InP double heterostructures were prepared by the low pressure-metal-organic chemical vapor deposition (LP-MOCVD) epitaxial technique for optical photodiode application in the 1.6 /spl mu/m-2.4 /spl mu/m range. The required narrow band gap active layer consists of a high indium composition Ga/sub 1-x/In/sub x/As (x = 0.8) layer. Different graded composition and superlattice buffer layers are investigated to accommodate the 1.8% lattice mismatch between InP and Ga/sub 0.2/In/sub 0.8/As. It is shown that a two microns thick InAs/sub y/P/sub 1-y/ graded composition layer (y up to 0.5) presents better optical and structural properties than a Ga/sub 1-x/In/sub x/As graded composition layer. High resolution X-ray diffraction investigations of an InAs/sub y/P/sub 1-y//Ga/sub 1-x/I superlattice shows its good ability to act as a barrier to dislocation propagation.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126702805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Noise and current characterization of lattice-mismatched LP-MOCVD grown InP/InGaAs/InP photodetector arrays 晶格不匹配LP-MOCVD生长InP/InGaAs/InP光电探测器阵列的噪声和电流表征
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380621
D. Pogány, S. Ababou, G. Guillot
{"title":"Noise and current characterization of lattice-mismatched LP-MOCVD grown InP/InGaAs/InP photodetector arrays","authors":"D. Pogány, S. Ababou, G. Guillot","doi":"10.1109/ICIPRM.1993.380621","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380621","url":null,"abstract":"A systematical study of physical mechanisms which control both the low frequency noise (LFN) and current in good and failed lattice-mismatched InP/In/sub x/Ga/sub 1-x/As/InP photodetectors has been performed. It has been shown that the LFN in lattice-mismatched InP/InGaAs/InP photodetectors results from the fluctuation of the excess leakage current which flows through localized leakage sites at the p-n junction. Results are analyzed in terms of influence of both material and technological defects. A hypothesis about the bulk or surface origin of the LFN is discussed in detail.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126843288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Effect of growth condition on electrical properties of MBE and MOCVD-AlInAs 生长条件对MBE和MOCVD-AlInAs电性能的影响
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380681
J.K. Luo, H. Thomas
{"title":"Effect of growth condition on electrical properties of MBE and MOCVD-AlInAs","authors":"J.K. Luo, H. Thomas","doi":"10.1109/ICIPRM.1993.380681","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380681","url":null,"abstract":"The characterization of Al/sub x/In/sub 1-x/As layers grown on n/sup +/-InP substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition has been carried out by I-V-T, C-V, deep level transient spectroscopy and admittance spectroscopy measurements. Three defect levels E1, E2, and E3 were observed in both material systems and their densities were found to increase rapidly from /spl sim/10/sup 12/ cm/sup -3/ to /spl sim/10/sup 16/ cm/sup -3/ as the growth temperature was decreased from 740/spl deg/C to 500/spl deg/C. The increased defect density was found to be correlated with the decrease of the barrier height of the Schottky diodes, and the appearance of defect-assisted tunneling current in MBE-diodes. The activation energy of the defect E3 was found to increase with increasing AlAs mole fraction, and likely correlating with the /spl Gamma/-conduction band of AlInAs materials.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129035252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photoluminescence excitation spectra from undoped InP 未掺杂InP的光致发光激发光谱
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380616
H. Yoshinaga, Y. Makita, A. Yamada, Y. Tsai, T. Iida, H. Shibata, A. Obara, T. Matsumori, S. Uekusa, K. Kainosho, O. Oda
{"title":"Photoluminescence excitation spectra from undoped InP","authors":"H. Yoshinaga, Y. Makita, A. Yamada, Y. Tsai, T. Iida, H. Shibata, A. Obara, T. Matsumori, S. Uekusa, K. Kainosho, O. Oda","doi":"10.1109/ICIPRM.1993.380616","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380616","url":null,"abstract":"In extremely pure InP when samples are annealed, five sharp emissions labeled by X/sub i/ (i = 1-4) and W were observed slightly below bound exciton emissions. Selectively-excited photoluminescence and photoluminescence excitation measurements were made to examine the features of these five emissions in the spectrum of annealed undoped InP. Four sharp emissions were observed below bound exciton emissions in undoped InP when samples were annealed at above 350/spl deg/C. Through low temperature photoluminescence excitation (PLE) spectroscopy, it was confirmed that these emissions are closely related with donor impurities. An additional sharp emission observed below the well-established donor-acceptor emission, denoted by W was also determined for the first time to be associated with the acceptor. It was concluded that PLE spectroscopy is a very powerful method to identify the origins of radiative transitions.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126555782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
GSMBE single step epitaxy of pseudo buried heterostructure laser 伪埋藏异质结构激光器的GSMBE单步外延
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380632
S. Loualiche, A. Le Corre, C. Vaudry, L. Henry, F. Clérot
{"title":"GSMBE single step epitaxy of pseudo buried heterostructure laser","authors":"S. Loualiche, A. Le Corre, C. Vaudry, L. Henry, F. Clérot","doi":"10.1109/ICIPRM.1993.380632","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380632","url":null,"abstract":"A single epitaxy step buried heterostructure laser has been fabricated. The laser was processed by using molecular beam epitaxy (MBE) grown layers, a reactive ion etching technique and self-aligned technology. The dielectric Si/sub x/N/sub y/ was used as a device lateral guiding layer. The SiN optical index is the same as InP and its optical loss and leakage current at 2V are lower than 100 cm/sup -1/ and 100 nA respectively. The device threshold current and efficiency are 30 mA and 0.2 W/A.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127901613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of InP Epi-ready wafers for epitaxial growth 外延生长InP外延晶片的评价
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380659
A. Overs, G. Jacob, M. Besland, V. Drouot, M. Gendry, G. Hollinger, M. Gauneau, D. Lecrosnier, J. Benchimol
{"title":"Evaluation of InP Epi-ready wafers for epitaxial growth","authors":"A. Overs, G. Jacob, M. Besland, V. Drouot, M. Gendry, G. Hollinger, M. Gauneau, D. Lecrosnier, J. Benchimol","doi":"10.1109/ICIPRM.1993.380659","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380659","url":null,"abstract":"The authors report on new X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) characterization results obtained on Epi-ready InP wafers as prepared with an optimized process and then stored in air for more than six months. They present a simplified molecular beam epitaxy oxide desorption procedure adapted to the new products. The quality of this procedure is demonstrated by the high performance of InAlAs/InGaAs high electron mobility transistor structures. The properties of the epitaxial structures prepared with different growth techniques are evaluated on the basis of secondary ion mass spectrometry results for residual impurities at epilayer-substrate interfaces.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"85 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115795180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
InP/GaInAs composite collector heterostructure bipolar transistors and circuits InP/GaInAs复合集电极异质结构双极晶体管及电路
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380556
A. Feygenson, R. Montgomery, P.R. Smith, R. Hamm, M. Haner, R.D. Yadvish, M. Panish, H. Temkin, D. Ritter
{"title":"InP/GaInAs composite collector heterostructure bipolar transistors and circuits","authors":"A. Feygenson, R. Montgomery, P.R. Smith, R. Hamm, M. Haner, R.D. Yadvish, M. Panish, H. Temkin, D. Ritter","doi":"10.1109/ICIPRM.1993.380556","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380556","url":null,"abstract":"The authors investigate an alternative structure of a InP/GaInAs composite collector heterostructure bipolar transistor (CC HBT) which relied on a thin lightly doped quaternary layer of GaInAsP placed between GaInAs and InP regions of the collector instead of the doped interface. In this structure the accurate doping control of GaInAsP layer was not required. The resulting transistor showed high gain, high breakdown voltage BV/sub CEO/, f/sub T/ of 137 GHz and improved scalability characteristics. The usefulness of high speed CC HBTs for circuits was demonstrated by 28 GHz bandwidth, 39 db/spl Omega/ gain monolithic transimpedance amplifiers and 32 Gbit/s hybrid optical receivers.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130177287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A new Al-free HFET structure: The pseudomorphic p-InP/n-InP/In/sub 0.75/GaAs double heterostructure /spl delta/-doped HEMT 一种新型无al HFET结构:p-InP/n-InP/In/sub 0.75/GaAs双异质结构/spl δ /掺杂HEMT
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380581
A. M. Kusters, A. Kohl, S. Brittner, T. Funke, V. Sommer, K. Heime
{"title":"A new Al-free HFET structure: The pseudomorphic p-InP/n-InP/In/sub 0.75/GaAs double heterostructure /spl delta/-doped HEMT","authors":"A. M. Kusters, A. Kohl, S. Brittner, T. Funke, V. Sommer, K. Heime","doi":"10.1109/ICIPRM.1993.380581","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380581","url":null,"abstract":"A new type of low pressure metal organic vapor epitaxial grown high electron mobility transistor (HEMT) device is reported. By using only a strained In/sub 0.75/Ga/sub 0.25/As quantum well (QW)-channel and InP as a carrier supplying n-type, /spl delta/-doped and barrier-enhancement p-type layers, a high performance pseudomorphic double heterostructure (DH)-HEMT has been created. The authors present the growth, device fabrication, material quality, and the DC- and RF-performance of 0.8 /spl mu/m-devices, which show extremely good characteristics. The approach described here may serve as an useful alternative to InAlAs containing structures because it eliminates many troublesome effects such as kinks, deep levels, interface states, high output conductances and gate leakages, which are attributed to a large extent to impurity-Al interactions.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131515891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum versus classical scattering time in liquid phase epitaxial Ga/sub 0.47/In/sub 0.53/As/InP 液相外延Ga/sub 0.47/ in /sub 0.53/As/InP的量子与经典散射时间
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380699
B. Podor, S. Novikov, I. G. Savel’ev, G. Gombos
{"title":"Quantum versus classical scattering time in liquid phase epitaxial Ga/sub 0.47/In/sub 0.53/As/InP","authors":"B. Podor, S. Novikov, I. G. Savel’ev, G. Gombos","doi":"10.1109/ICIPRM.1993.380699","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380699","url":null,"abstract":"The authors present the results of Shubnikov m- effect measurements in two-dimensional electron gas in modulation-doped Ga/sub 0.47/In/sub 0.53/As/InP heterostructures grown by liquid phase epitaxy. Shubnikov-de Haas measurements were performed at 4.2 K temperature in magnetic fields up to 5.3 Tesla using a superconducting magnet system. From the magnetoresistance oscillation amplitudes the quantum scattering time and its ratio to the classical scattering time were deduced.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"357 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131749746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High electron mobility in indium-rich pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As structures grown by MBE on InP 在InP上MBE生长富铟伪晶in /sub x/Ga/sub 1-x/As/ in /sub 0.52/Al/sub 0.48/As结构的高电子迁移率
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380586
V. Drouot, M. Gendry, G. Hollinger, C. Santinelli, X. Letartre, P. Viktorovitch
{"title":"High electron mobility in indium-rich pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As structures grown by MBE on InP","authors":"V. Drouot, M. Gendry, G. Hollinger, C. Santinelli, X. Letartre, P. Viktorovitch","doi":"10.1109/ICIPRM.1993.380586","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380586","url":null,"abstract":"High electron mobility pseudomorphic In/sub x/Ga/sub 1-x/As/InAlAs heterostructures have been fabricated on InP for a wide range of In composition and growth temperatures. Both mobility and carrier concentrations can be increased by increasing the indium content in the channel up to x=0.75. The highest performance has been obtained with x=0.75 for a growth temperature of 500/spl deg/C, when adapted growth conditions or growth interruptions are used to reduce the interface roughness. The electron mobility of such a structure reaches 14,500 cm/sup 2//V.s at 300 K and 101,000 cm/sup 2//V.s at 77 K for a two-dimensional electron gas concentration of 2.4 10/sup 12/ cm/sup -2/.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133070021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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