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1993 (5th) International Conference on Indium Phosphide and Related Materials最新文献

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Experiment-based projected high efficiency thermally diffused p/sup +/n (Cd,S) InP solar cells for space applications 基于实验的空间应用高效热扩散p/sup +/n (Cd,S) InP太阳能电池
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380671
M. Faur, M. Faur, D. Flood, D. Brinker, C. Goradia, M. Goradia, I. Weinberg, N. Fatemi
{"title":"Experiment-based projected high efficiency thermally diffused p/sup +/n (Cd,S) InP solar cells for space applications","authors":"M. Faur, M. Faur, D. Flood, D. Brinker, C. Goradia, M. Goradia, I. Weinberg, N. Fatemi","doi":"10.1109/ICIPRM.1993.380671","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380671","url":null,"abstract":"By drastically reducing the defect densities of p/sup +/n (Cd,S) InP diffused structures the authors have succeeded in fabricating p/sup +/n InP solar cells with measured AM0, 25/spl deg/C V/sub /spl prop// values exceeding 880 mV, without anti-reflection (AR) coating. Experiment-based projected maximum achievable AM0, 25/spl deg/C efficiency of these cells is 21.3%. Preliminary investigation of the performance parameters of p/sup +/n (Cd,S) InP structures and solar cells after irradiation with 10/sup 13/ cm/sup -2/ 3MeV protons indicate higher radiation tolerance of this configuration as compared to n/sup +/p InP configuration due to its better annealing properties.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"22 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125780682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Monolithic fabrication of NPN and PNP AlInAs/GaInAs HBTs NPN和PNP AlInAs/GaInAs HBTs的单片制备
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380557
W. Stanchina, R. Metzger, M. W. Pierce, J. Jensen, L. McCray, R. Wong-Quen, F. Williams
{"title":"Monolithic fabrication of NPN and PNP AlInAs/GaInAs HBTs","authors":"W. Stanchina, R. Metzger, M. W. Pierce, J. Jensen, L. McCray, R. Wong-Quen, F. Williams","doi":"10.1109/ICIPRM.1993.380557","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380557","url":null,"abstract":"The authors demonstrated the feasibility of a new technique for the monolithic fabrication of complementary heterostructure bipolar transistors (HBTs). The process led to coplanar npn and pnp HBTs, the first in the AlInAs/GaInAs material system, which were comparable with the state of the art in HBTs. These devices exhibited unity current gain cutoff frequencies (f/sub T/) up to 99 GHz and 14 GHz for the npn and pnp transistors, respectively. The fabrication scheme allows each of these device types to have individually designed epitaxial structures that are grown in a single molecular beam epitaxy run. Results show that the devices will be capable of tight packing densities for IC applications.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123811614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Hole capture cross section of the deep Ti donor level in InP InP中深部Ti供体能级的空穴捕获截面
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380700
H. Scheffler, N. Baber, A. Dadgar, T. Wolf, D. Bimberg
{"title":"Hole capture cross section of the deep Ti donor level in InP","authors":"H. Scheffler, N. Baber, A. Dadgar, T. Wolf, D. Bimberg","doi":"10.1109/ICIPRM.1993.380700","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380700","url":null,"abstract":"The hole capture cross section /spl sigma//sub p/ of the deep Ti/sup 3+//Ti/sup 4+/ donor level in InP has been measured as a function of temperature. Two different capacitance spectroscopy techniques have been used, namely deep level transient spectroscopy and an isothermal capacitance measurement method for capture measurements at high and low temperatures, respectively. /spl sigma//sub p/ has been found to increase with temperature from 2.8 /spl times/ 10/sup -23/ cm/sup 2/ at 100 K to 2.7 /spl times/ 10/sup -22/ at 300 K, in agreement with a multiphonon emission process. The capture barrier for hole capture amounts to (30/spl plusmn/5) meV.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125516683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved fabrication of 4 /spl times/ 4 polarisation insensitive switch matrices on InP by introduction of an etch stop layer 通过引入刻蚀停止层，改进了在InP上制作4 /spl倍/ 4极化不敏感开关矩阵的方法
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380704
J. Peyre, A. Goutelle, P. Pagnod-Rossiaux, J. Vinchant
{"title":"Improved fabrication of 4 /spl times/ 4 polarisation insensitive switch matrices on InP by introduction of an etch stop layer","authors":"J. Peyre, A. Goutelle, P. Pagnod-Rossiaux, J. Vinchant","doi":"10.1109/ICIPRM.1993.380704","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380704","url":null,"abstract":"The first polarization insensitive to 4 /spl times/ 4 switch matrix on InP with digital optical switches (DOS) has been recently presented (J-F. Vinchant et al., 1992). The authors report processing and performance improvements of this matrix by introduction of an etch stop layer in the structure grown by gas source molecular beam epitaxy (GSMBE). Several heterostructures grown on 2-inch wafers by GSMBE in a Virian reactor have been processed. This epitaxial technique allows high homogeneity of layers' thickness and doping. The optical characterization of the matrices has been done by using a 1.54 /spl mu/m wavelength laser for both transverse electric (TE) and transverse magnetic (TM) polarization. The results are reported.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"406 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129252780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
In/sub 1-x/Ga/sub x/As/In/sub .53/Ga/sub .47/As strained superlattices grown by gas source molecular beam epitaxy 气体源分子束外延生长In/sub 1-x/Ga/sub x/As/In/sub .53/Ga/sub .47/As的应变超晶格
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380689
A. Godefroy, A. Le Corre, F. Clérot, J. Caulet, A. Poudoulec, S. Salaun, D. Lecrosnier
{"title":"In/sub 1-x/Ga/sub x/As/In/sub .53/Ga/sub .47/As strained superlattices grown by gas source molecular beam epitaxy","authors":"A. Godefroy, A. Le Corre, F. Clérot, J. Caulet, A. Poudoulec, S. Salaun, D. Lecrosnier","doi":"10.1109/ICIPRM.1993.380689","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380689","url":null,"abstract":"Strained epitaxial heterostructures yield attractive optoelectronic properties for laser diodes and optical amplifiers. Using various characterization techniques consisting of continuous and time resolved photoluminescence, X-ray diffraction, and transmission electron microscopy, the authors demonstrate the importance of the growth temperature on the relaxation of strained superlattices (SL). By lowering the growth temperature, high quality highly strained SL layers could be obtained.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127821976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Control of beryllium redistribution in InP grown by gas source molecular beam epitaxy 气源分子束外延生长InP中铍重分布的控制
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380674
P. Pagnod-Rossiaux, D. Bonnevie, M. Boulou, F. Gaborit, F. Chouquais, L. Goldstein
{"title":"Control of beryllium redistribution in InP grown by gas source molecular beam epitaxy","authors":"P. Pagnod-Rossiaux, D. Bonnevie, M. Boulou, F. Gaborit, F. Chouquais, L. Goldstein","doi":"10.1109/ICIPRM.1993.380674","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380674","url":null,"abstract":"Beryllium is widely used in molecular beam epitaxy (MBE) as a p-type dopant. The authors report on the diffusion of Be in InP with beryllium concentrations in excess of 1/spl times/10/sup 19/ cm/sup -3/ during growth by gas-source MBE. Diffusion profiles are analyzed by secondary ion mass spectrometry and C(V) profiling. The dependency of diffusion on the type and doping of InP is investigated. It was found experimentally that diffusion depths are mainly correlated to the heavily-doped layer thickness, and strongly depend on the type and doping level of the host material. This is consistent with a mechanism of fast diffusing positively charged interstitial, further incorporated as a substitutional, with an electrical activity close to 1, as shown by C(V) profiling. Diffusion of Be in InP:Fe shows a peculiar iron out-diffusion induced by the excess interstitial Be.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130013696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MeV ion implantation for electrical isolation of p/sup +/ InP epi-layers MeV离子注入对p/sup +/ InP外延层电隔离的影响
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380636
M. Ridgway, M. Davies, J. Sedivy, R. Vandenberg, S. Rolfe, T. Jackman
{"title":"MeV ion implantation for electrical isolation of p/sup +/ InP epi-layers","authors":"M. Ridgway, M. Davies, J. Sedivy, R. Vandenberg, S. Rolfe, T. Jackman","doi":"10.1109/ICIPRM.1993.380636","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380636","url":null,"abstract":"Electrical isolation of p/sup +/-InP epi-layers with B, O and Fe ion implantation at MeV energies has been investigated. For each of the three ion species, sheet resistance (R/sub s/) values of 5-8 /spl times/ 10/sup 6/ /spl Omega//square were attained after post-implant annealing at temperatures between 300-400/spl deg/C. R/sub s/ values were relatively insensitive to ion dose varying by one order of magnitude for an ion dose range of three orders of magnitude. Fe diffusion was apparent at an annealing temperature of 800/spl deg/C.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129558840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Evaporated thin silicon interlayers for indium phosphide device applications 用于磷化铟器件的蒸发薄硅中间层
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380652
H. Dauplaise, J. P. Lorenzo, E. Martín, K. Vaccaro, G. Ramseyer
{"title":"Evaporated thin silicon interlayers for indium phosphide device applications","authors":"H. Dauplaise, J. P. Lorenzo, E. Martín, K. Vaccaro, G. Ramseyer","doi":"10.1109/ICIPRM.1993.380652","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380652","url":null,"abstract":"The use of thin silicon films for indium phosphide device applications was investigated. Devices prepared with the silicon interlayers show a decrease in hysteresis, flat band voltage shift, and interface state density. Angular resolved X-ray photoelectron spectroscopy studies of the silicon-indium phosphide interface indicate that these effects are due to the interaction of the silicon with the native oxide of indium phosphide prior to dielectric deposition.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129759737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Via hole formation in semi-insulating InP using wet photoelectrochemical etching 利用湿式光电化学蚀刻技术在半绝缘InP中形成通孔
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380565
R. Khare, E. Hu, J.J. Brown, M. Melendes
{"title":"Via hole formation in semi-insulating InP using wet photoelectrochemical etching","authors":"R. Khare, E. Hu, J.J. Brown, M. Melendes","doi":"10.1109/ICIPRM.1993.380565","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380565","url":null,"abstract":"Laser-assisted wet photoelectrochemical etching has been used in conjunction with a metal mask to make via holes in semi-insulating InP. It was found that the incident laser intensity and applied bias can control the degree of sidewall taper in the via holes as well as the vertical and lateral etch rates. It was found that the etch rate is faster for smaller via hole dimensions due to the smaller anode-to-cathode path length. There are however geometric limitations to the overall etched depth for small vias etched at low intensities due to the taper of the sidewalls. This method has demonstrated high etch rates and minimal undercut. Custom tailoring of the etch profile is achievable through adjustment of the etch parameters.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129838484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells 压缩应变InGaAs/InGaAlAs多量子阱中激子跃迁的吸收和光致发光研究
1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380580
W. Choi, Y. Hirayama, C. Fonstad
{"title":"Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells","authors":"W. Choi, Y. Hirayama, C. Fonstad","doi":"10.1109/ICIPRM.1993.380580","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380580","url":null,"abstract":"The authors present the results of investigations in which excitonic transitions in compressively strained InGaAs multiple quantum wells (QWs) on InP are studied by absorption and photoluminescence (PL) measurements. Specifically, quantitative exciton parameters such as transition energies, exciton binding energies and radii are estimated from absorption measurements. A comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126301593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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