NPN和PNP AlInAs/GaInAs HBTs的单片制备

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI:10.1109/ICIPRM.1993.380557

W. Stanchina, R. Metzger, M. W. Pierce, J. Jensen, L. McCray, R. Wong-Quen, F. Williams

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引用次数: 13

摘要

作者论证了一种单片制备互补异质结构双极晶体管(hbt)的新技术的可行性。该工艺导致共面npn和pnp HBTs，这是AlInAs/GaInAs材料系统中的第一个，可与最先进的HBTs相媲美。这些器件的npn和pnp晶体管的单位电流增益截止频率(f/sub T/)分别高达99 GHz和14 GHz。制造方案允许这些器件类型中的每一种具有单独设计的外延结构，这些外延结构在单个分子束外延运行中生长。结果表明，该器件能够满足集成电路应用的紧凑封装密度

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Monolithic fabrication of NPN and PNP AlInAs/GaInAs HBTs

The authors demonstrated the feasibility of a new technique for the monolithic fabrication of complementary heterostructure bipolar transistors (HBTs). The process led to coplanar npn and pnp HBTs, the first in the AlInAs/GaInAs material system, which were comparable with the state of the art in HBTs. These devices exhibited unity current gain cutoff frequencies (f/sub T/) up to 99 GHz and 14 GHz for the npn and pnp transistors, respectively. The fabrication scheme allows each of these device types to have individually designed epitaxial structures that are grown in a single molecular beam epitaxy run. Results show that the devices will be capable of tight packing densities for IC applications.<>

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1993 (5th) International Conference on Indium Phosphide and Related Materials

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