M. Faur, M. Faur, D. Flood, D. Brinker, C. Goradia, M. Goradia, I. Weinberg, N. Fatemi
{"title":"基于实验的空间应用高效热扩散p/sup +/n (Cd,S) InP太阳能电池","authors":"M. Faur, M. Faur, D. Flood, D. Brinker, C. Goradia, M. Goradia, I. Weinberg, N. Fatemi","doi":"10.1109/ICIPRM.1993.380671","DOIUrl":null,"url":null,"abstract":"By drastically reducing the defect densities of p/sup +/n (Cd,S) InP diffused structures the authors have succeeded in fabricating p/sup +/n InP solar cells with measured AM0, 25/spl deg/C V/sub /spl prop// values exceeding 880 mV, without anti-reflection (AR) coating. Experiment-based projected maximum achievable AM0, 25/spl deg/C efficiency of these cells is 21.3%. Preliminary investigation of the performance parameters of p/sup +/n (Cd,S) InP structures and solar cells after irradiation with 10/sup 13/ cm/sup -2/ 3MeV protons indicate higher radiation tolerance of this configuration as compared to n/sup +/p InP configuration due to its better annealing properties.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"22 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Experiment-based projected high efficiency thermally diffused p/sup +/n (Cd,S) InP solar cells for space applications\",\"authors\":\"M. Faur, M. Faur, D. Flood, D. Brinker, C. Goradia, M. Goradia, I. Weinberg, N. Fatemi\",\"doi\":\"10.1109/ICIPRM.1993.380671\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By drastically reducing the defect densities of p/sup +/n (Cd,S) InP diffused structures the authors have succeeded in fabricating p/sup +/n InP solar cells with measured AM0, 25/spl deg/C V/sub /spl prop// values exceeding 880 mV, without anti-reflection (AR) coating. Experiment-based projected maximum achievable AM0, 25/spl deg/C efficiency of these cells is 21.3%. Preliminary investigation of the performance parameters of p/sup +/n (Cd,S) InP structures and solar cells after irradiation with 10/sup 13/ cm/sup -2/ 3MeV protons indicate higher radiation tolerance of this configuration as compared to n/sup +/p InP configuration due to its better annealing properties.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"22 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380671\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Experiment-based projected high efficiency thermally diffused p/sup +/n (Cd,S) InP solar cells for space applications
By drastically reducing the defect densities of p/sup +/n (Cd,S) InP diffused structures the authors have succeeded in fabricating p/sup +/n InP solar cells with measured AM0, 25/spl deg/C V/sub /spl prop// values exceeding 880 mV, without anti-reflection (AR) coating. Experiment-based projected maximum achievable AM0, 25/spl deg/C efficiency of these cells is 21.3%. Preliminary investigation of the performance parameters of p/sup +/n (Cd,S) InP structures and solar cells after irradiation with 10/sup 13/ cm/sup -2/ 3MeV protons indicate higher radiation tolerance of this configuration as compared to n/sup +/p InP configuration due to its better annealing properties.<>
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