A. Godefroy, A. Le Corre, F. Clérot, J. Caulet, A. Poudoulec, S. Salaun, D. Lecrosnier
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In/sub 1-x/Ga/sub x/As/In/sub .53/Ga/sub .47/As strained superlattices grown by gas source molecular beam epitaxy
Strained epitaxial heterostructures yield attractive optoelectronic properties for laser diodes and optical amplifiers. Using various characterization techniques consisting of continuous and time resolved photoluminescence, X-ray diffraction, and transmission electron microscopy, the authors demonstrate the importance of the growth temperature on the relaxation of strained superlattices (SL). By lowering the growth temperature, high quality highly strained SL layers could be obtained.<>
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