用于磷化铟器件的蒸发薄硅中间层

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI:10.1109/ICIPRM.1993.380652

H. Dauplaise, J. P. Lorenzo, E. Martín, K. Vaccaro, G. Ramseyer

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引用次数: 0

摘要

研究了硅薄膜在磷化铟器件中的应用。用硅中间层制备的器件显示出迟滞、平带电压位移和界面态密度的降低。角分辨x射线光电子能谱对硅-磷化铟界面的研究表明，这些效应是由于硅在介电沉积之前与磷化铟的天然氧化物相互作用所致

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Evaporated thin silicon interlayers for indium phosphide device applications

The use of thin silicon films for indium phosphide device applications was investigated. Devices prepared with the silicon interlayers show a decrease in hysteresis, flat band voltage shift, and interface state density. Angular resolved X-ray photoelectron spectroscopy studies of the silicon-indium phosphide interface indicate that these effects are due to the interaction of the silicon with the native oxide of indium phosphide prior to dielectric deposition.<>

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1993 (5th) International Conference on Indium Phosphide and Related Materials

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