MeV ion implantation for electrical isolation of p/sup +/ InP epi-layers

Abstract

Electrical isolation of p/sup +/-InP epi-layers with B, O and Fe ion implantation at MeV energies has been investigated. For each of the three ion species, sheet resistance (R/sub s/) values of 5-8 /spl times/ 10/sup 6/ /spl Omega//square were attained after post-implant annealing at temperatures between 300-400/spl deg/C. R/sub s/ values were relatively insensitive to ion dose varying by one order of magnitude for an ion dose range of three orders of magnitude. Fe diffusion was apparent at an annealing temperature of 800/spl deg/C.<>