S. Loualiche, A. Le Corre, C. Vaudry, L. Henry, F. Clérot
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引用次数: 0
摘要
制备了一种单外延阶埋式异质结构激光器。采用分子束外延(MBE)生长层、反应离子刻蚀技术和自对准技术制备激光器。采用介电材料Si/sub x/N/sub y/作为器件侧导层。SiN的光学指数与InP相同，在2V时的光损耗和漏电流分别小于100 cm/sup -1/和100 nA。器件的阈值电流为30ma，效率为0.2 W/ a
GSMBE single step epitaxy of pseudo buried heterostructure laser
A single epitaxy step buried heterostructure laser has been fabricated. The laser was processed by using molecular beam epitaxy (MBE) grown layers, a reactive ion etching technique and self-aligned technology. The dielectric Si/sub x/N/sub y/ was used as a device lateral guiding layer. The SiN optical index is the same as InP and its optical loss and leakage current at 2V are lower than 100 cm/sup -1/ and 100 nA respectively. The device threshold current and efficiency are 30 mA and 0.2 W/A.<>
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