Noise and current characterization of lattice-mismatched LP-MOCVD grown InP/InGaAs/InP photodetector arrays

Abstract

A systematical study of physical mechanisms which control both the low frequency noise (LFN) and current in good and failed lattice-mismatched InP/In/sub x/Ga/sub 1-x/As/InP photodetectors has been performed. It has been shown that the LFN in lattice-mismatched InP/InGaAs/InP photodetectors results from the fluctuation of the excess leakage current which flows through localized leakage sites at the p-n junction. Results are analyzed in terms of influence of both material and technological defects. A hypothesis about the bulk or surface origin of the LFN is discussed in detail.<>