Strain relaxation of Ga/sub 0.2/In/sub 0.8/As and InAs/sub 0.5/P/sub 0.5/ layers grown on InP substrate for 1.6 to 2.4 /spl mu/m spectral range Ga/sub x/In/sub 1-x/As/InAs/sub y/P/sub 1-y//InP photodiodes application

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI:10.1109/ICIPRM.1993.380691

P. Kae-Nune, M. di Forte-Poisson, C. Brylinski, J. di Persio

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Abstract

Mismatched Ga/sub 1-x/As/InAs/sub y/P/sub 1-y//InP double heterostructures were prepared by the low pressure-metal-organic chemical vapor deposition (LP-MOCVD) epitaxial technique for optical photodiode application in the 1.6 /spl mu/m-2.4 /spl mu/m range. The required narrow band gap active layer consists of a high indium composition Ga/sub 1-x/In/sub x/As (x = 0.8) layer. Different graded composition and superlattice buffer layers are investigated to accommodate the 1.8% lattice mismatch between InP and Ga/sub 0.2/In/sub 0.8/As. It is shown that a two microns thick InAs/sub y/P/sub 1-y/ graded composition layer (y up to 0.5) presents better optical and structural properties than a Ga/sub 1-x/In/sub x/As graded composition layer. High resolution X-ray diffraction investigations of an InAs/sub y/P/sub 1-y//Ga/sub 1-x/I superlattice shows its good ability to act as a barrier to dislocation propagation.<>

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在InP衬底上生长的Ga/sub 0.2/In/sub 0.8/As和InAs/sub 0.5/P/sub 0.5/层在1.6 ~ 2.4 /spl mu/m光谱范围Ga/sub x/In/sub 1-x/As/InAs/sub y/P/sub 1-y//InP光电二极管的应变松弛

采用低压金属-有机化学气相沉积(LP-MOCVD)外延技术，在1.6 /spl mu/m-2.4 /spl mu/m范围内制备了非匹配的Ga/sub - 1-x/As/InAs/sub -y/ P/sub - 1-y//InP双异质结构。所需窄带隙有源层由高铟成分Ga/sub - 1-x/In/sub x/As (x = 0.8)层组成。研究了不同的梯度组成和超晶格缓冲层，以适应InP和Ga/sub 0.2/In/sub 0.8/As之间1.8%的晶格失配。结果表明，两微米厚的InAs/sub -y/ P/sub -y/梯度复合材料层(y≤0.5)比Ga/sub - 1-x/In/sub -x/ As梯度复合材料层具有更好的光学和结构性能。对InAs/sub -y/ P/sub - 1-y//Ga/sub - 1-x/I超晶格的高分辨x射线衍射研究表明，InAs/sub -y/ P/sub - 1-x/I超晶格具有良好的位错传播屏障作用。

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1993 (5th) International Conference on Indium Phosphide and Related Materials

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